检索结果-内蒙古大学图书馆

The Role of Charged Defects in Photo-Degradation of Hydrogenated Amorphous Silicon

MRS Online Proceedings Library 1992年第1期258卷 449-454页

作者： Vikram L. Dalal Sanjiv Chopra Ralph Knox Dept. of Electrical and Computer Engineering and Microelectronics Research Center USA Microelectronics Research Center Iowa State University Ames USA

We examine the role of charged defects in inducing degradation of electronic properties of a-Si:H upon exposure to light. We measure the kinetics of decay of photo-conductivity of a-Si:H films at different light intensities, and the corresponding changes in mid-gap optical absorption. We find that the initial, rapid decay of photo-conductivity can be modeled guite well by invoking Adler's model of conversion of charged defects to neutral dangling bonds(D- to D0 conversion). A consequence of this conversion is a decrease in sub-gap absorption upon photo-induced degradation, which we observe. Therefore, we conclude that charged defects coexist with neutral defects in a-Si:H, and they play a major role in early stages of photo-degradation.

关键词：

来源：评论

学校读者我要写书评

暂无评论

A CMOS VLSI chip for motion detection 5

A CMOS VLSI chip for motion detection

引用

5th International Conference on VLSI Design, ICVD 1992

作者： Ranganathan, N. Mehrotra, R. Kuiji, S. Center for Microelectronics Research Dept.of Computer Science and Engineering University of South Florida TampaFL33620 United States Dept. of Computer Science Center for Robotics and Manufacturing Systems University of Kentucky LexingtonKY40506 United States

ISBN: (纸本)0818624655

Motion dctcction from a sccnc involves processing and analysis of a sequence of image frames taken at a regularly spaced lime interval to detect motion related information pertaining to the scene. Since a large volume of data is generally required to be processed, dynamic sccnc analysis techniques arc, in general, computationally very intensive which makes them unsuitable for applications which require real-time response. A common approach to obtain motion related information about a sccnc involves analyzing the characteristics of the connected regions in the corresponding difference picture. In this paper, we describe the design and implementation of a VLSI chip for motion detection. The chip is based on an architecture that utilizes the possible parallelism and pipelining in order to obtain high speed and throughput. The architecture is systolic and each processor is organized as a pipeline. The processor organization is simple enough that as many as 30 processors can be laid out in a single chip. Each processor is capable of handling one region of motion. A prototype CMOS VLSI chip implementing a single processor cell has been designed and verified. The chip can process a pair of 512x512 image frames in about 6.4 msec operating at a rate of 40 MHz. © 1991 IEEE.

关键词： Lime

来源：评论

学校读者我要写书评

暂无评论

High T C Superconducting Switch

引用

MRS Online Proceedings Library 1992年第1期275卷 571-576页

作者： T. S. Kalkur Dave Ward Microelectronics Research Laboratories Dept. of Electrical and Computer Engineering University of Colorado at Colorado Springs Colorado Springs

A switch has been developed which uses a thin film of Y-Ba-Cu-O as a switching element. The two important process parameters in the fabrication of the switch - contact resistance between a metal and a superconductor and the passivation of the superconducting films by SiO2 have been studied. The thin film of superconductor is patterned into a narrow line (gate) crossed by a metal control line with a deposited SiO2 as an insulation layer between them. When the control line carries current large enough to switch the gate into the normal state the gate is in the s'off′ state. When no current is present, the gate is superconducting and it is in the s'on′ state. The operation of the device was verified by testing at 77 K. Applications of the device include amplifiers, digital logic circuits, and microwave switches.

关键词：

来源：评论

学校读者我要写书评

暂无评论

Robustsless Enhancement and Detection Threshold Reduction in ATPG for Gate Delay Faults

Robustsless Enhancement and Detection Threshold Reduction in...

引用

International Test Conference, ITC 1992

作者： Mao, Weiwei Giletti, M.D. Ford Microelectronics Inc. 9965 Federal Drive Colorado SpringsCO80921 United States Dept. of Electrical and Computer Engineering University of Colorado Colorado SpringsCO80907 United States

ISBN: (纸本)9780780307605

In this paper, we introduce a new test generation algorithm for testing ate delay fault. The main new feature of the algoritfm is that it uses auantitanve information about detection threshold F d robustness to guide its choice of the fault sensitizabon path and the associated line j-ustifications. The. algorithm attempts. to reduce the detectnon threshold and increase the quanbtabve robustness of the test s. Thus, with this new algorithm, we are able to show Etest pattern sets generated by the algorithm achieve better fault coverage, detection threshold and robustness than those that are generated randomly. © 1992 IEEE.

关键词： Fault detection

来源：评论

学校读者我要写书评

暂无评论

A two-dimensional systolic array processor for image processing 5

A two-dimensional systolic array processor for image process...

引用

5th International Conference on VLSI Design, ICVD 1992

作者： Ranganathan, N. Patel, Minesh Mccabe, Patrick A. Center for Microelectronics Research Dept. of Computer Science and Engineering University of South Florida TampaFL33620 United States Honeywell Inc. Space and Strategic Systems Operations 13350U.S. Hwy. 19 So. ClearwaterFL34624-7290 United States

ISBN: (纸本)0818624655

For most parallelizable algorithms in image processing, maximum speed-up can be obtained by assigning a processor per pixel which results in a two dimensional array of processors. Since an 8-bit multiplier is expensive in terms of silicon area, most previously proposed two- dimensional arrays use a single-bit processing clcmenL From our analysis, we have found that a 4-bit processing element requires a slightly larger silicon area than a single bit processor, but can yield significant improvements in performance. This paper reports on our on-going research towards the design and implementation of a two- dimensional array processor architecture for image processing applications. The processor architecture is based on a SIMD array of 4-bit processing elements, interconnected by a mesh network with four nearest neighbors. The PE array is programmable, allowing the user to develop application-specific algorithms for performing analysis on image data from a detector array. The architecture has been simulated extensively using VHDL and some basic image processing algorithms have been mapped to the architecture. CurrenUy, the proposed array processor architecture is being implemented as a CMOS VLSI chip at the University of South Florida. The chip is cxpected to operate at a speed of 25 MHz. © 1991 IEEE.

关键词： Systolic arrays

来源：评论

学校读者我要写书评

暂无评论

A component-invariant second-order switched-current sigma-delta modulator

A component-invariant second-order switched-current sigma-de...

引用

IEEE International Symposium on Circuits and Systems (ISCAS)

作者： P.J. Crawly G.W. Roberts Dept. of Electr. Eng. McGill Univ. Montreal Que. Canada Microelectronics and Computer Systems Laboratory Department of Electrical Engineering McGill University Canada

The authors present the building blocks and design procedure necessary for creating a component-invariant second-order switched current (SI) sigma-delta modulator ( Sigma Delta M). A novel SI second-order integrator block is paramount to the design. A voiceband (4-kHz) analog-to-digital (A/D) converter was designed and laid out in Northern Telecom's 1.2- mu m CMOS process. Final transistor level simulations on the netlist derived directly from the layout indicated a resolution of only 10 b, a result of excessive charge injection and clock feedthrough. The power and area requirements of the SI design are estimated to be 0.2 mW and 0.2 mm/sup 2/, respectively.< >

关键词： Delta-sigma modulation Switches computer aided manufacturing CADCAM Circuits Voltage Telecommunication switching CMOS process Signal design Signal processing

来源：评论

学校读者我要写书评

暂无评论

Statistical theory of fatigue in ferroelectric devices

引用

Integrated Ferroelectrics 1992年第2-4期1卷 305-322页

作者： Paz De Araujo, C.A. Zuleeg, R. Mihara, T. Watanabe, H. Carrico, A. McMillan, L.D. Scott, J.F. Microelectronics Research Laboratories Dept. of Electrical and Computer Engineering University of Colorado at Colorado Springs United States Olympus Optical Corporation Ltd. Tokyo Japan Dept. of Physics U. Fed. do R.G. do Norte Brazil Microelectronics Research Laboratories Dept. of Electrical and Computer Engineering University of Colorado at Colorado Springs United States Symetrix Corporation Colorado Springs Colorado United States Dept. of Physics University of Colorado Boulder United States

A simple model of fatigue in ferroelectric thin-films is developed from first principles. The core of the model is the distribution of pinning and coercive energies due to the polycrystalline nature of the material. Also, because domain nucleation for thin-films seem to be surface dominant, and surface space-charges are usually present, the model assumes that the pinning energies are field activated due to surface screening effects. The model is based on the well known two-state cluster theory in statistical physics. Further results from the model include the log (t) dependence of fatigue as a direct consequence of a gaussian distribution of pinning energies. And, for the first time a theoretical description of the V-1 dependence of fatigue is also described. The model is tested using fatigue data of sol-gel derived integrated (Si) PZT capacitors. © 1992, Taylor & Francis Group, LLC. All rights reserved.

关键词：

来源：评论

学校读者我要写书评

暂无评论

THE GROWTH OF HIGH-QUALITY INP/INGAAS/INGAASP INTERFACES BY CBE FOR SCH MULTI-QUANTUM-WELL LASERS

引用

JOURNAL OF ELECTRONIC MATERIALS 1991年第12期20卷 979-982页

作者： SHERWIN, ME NICHOLS, DT MUNNS, GO BHATTACHARYA, PK HADDAD, GI 1. Center for High Frequency Microelectronics Electrical Engineering and Computer Science Dept. The University of Michigan 2435 EECS Building 48109-2122 Ann Arbor MI

Bulk InGaAsP and heterointerfaces of InP/InGaAs and InGaAsP/InGaAs have been grown by chemical beam epitaxy for use in multi-quantum well separate confinement heterostructure lasers. InGaAsP has been successfully grown for lambda = 1.1, 1.2 and 1.4-mu-m. The TMI and TEG incorporation coefficients have strong dependencies on substrate temperature and also charge as the InGaAsP composition tends towards InP. InP/InGaAs and InGaAsP/InGaAs quantum wells have been grown to determine the optimum gas switching sequence to minimize the measured photoluminescence FWHM. InGaAs quantum wells as narrow as 0.6 nm have been grown with 7K FWHM of 12.3 meV. Lattice matched MQW-SCH lasers were grown using different interface switching sequences with the best laser having a threshold current density of 792 A/cm2 for an 800 x 90-mu-m broad area device.

关键词： CBE INGAASP MQW-SCH LASERS

来源：评论

学校读者我要写书评

暂无评论

A FINITE-DIFFERENCE TRANSMISSION-LINE MATRIX-METHOD INCORPORATING A NONLINEAR DEVICE MODEL

引用

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES 1990年第3期38卷 302-312页

作者： VOELKER, RH LOMAX, RJ Center of High-Frequency Microelectronics Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA Dept. of Electr. Eng. & Comput. Sci. Michigan Univ. Ann Arbor MI USA

A variable-mesh combination of the expanded-node transmission line matrix (TLM) and finite-difference-time-domain (FD-TD) methods for solving time-domain electromagnetic problems is described. It retains the physical process of wave propagation and the numerical stability of the former and it has the computational efficiency of the latter. This full-wave finite-difference transmission line matrix (FD-TLM) method utilizes transmission lines of differing impedances to implement a three-dimensional variable mesh, which makes practical the simulation of structures having fine details, such as digital integrated circuits (ICs). Circuit models for lumped resistors, capacitors, diodes, and MESFETs have been developed and included for use in simulating digital and microwave ICs. The validity of the variable mesh implementation is verified by comparing an FD-TLM simulation of a picosecond pulse generator structure with electrooptical measurements, and the validity of the device model implementation is verified by comparing an FD-TLM simulation of a MESFET logic inverter with a SPICE simulation.

关键词： nonlinear device transmission line matrix Finite differences MESFETs Numerical stability Physical Processes simulating Computational efficiency Transmission Lines transmission line matrix methods Integrated circuits

来源：评论

学校读者我要写书评

暂无评论

An iterative algorithm for the binate covering problem

An iterative algorithm for the binate covering problem

引用

1990 European Design Automation Conference, EDAC 1990

作者： Pipponzi, M. Somenzi, F. SGS-Thomson Microelectronics Agrate Brianza20041 Italy Dept. of Electrical and Computer Engineering University of Colorado BoulderCO80309 United States

ISBN: (纸本)0818620242

Many problems of interest in the field of electronic design automation can be formulated as binate covering problems. This occurs whenever the solution sought for is the minimum cost assignment satisfying a Boolean formula in conjunctive form. Practical problems may have hundreds of variables and thousands of clauses;hence efficient techniques are important. The paper proposes a new iterative scheme that is based on solving a sequence of sub-problems that normally lead to the solution of the original problem in a fraction of the time. © 1990 IEEE.

关键词： Iterative methods

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：