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arXiv 2017年

作者： Pablo-Pedro, Ricardo Lopez-Rios, Hector Mendoza-Cortes, Jose-L Kong, Jing Fomine, Serguei van Voorhis, Troy Dresselhaus, Mildred S. Department of Chemistry Massachusetts Institute of Technology 77 Massachusetts Avenue CambridgeMA02139 United States Instituto de Investigaciones en Materiales Universidad Nacional Autónoma de México Apartado Postal 70-360 CU Coyoacán Ciudad de México04510 Mexico Department of Chemical & Biomedical Engineering Florida A&M University Florida State University Joint College of Engineering Tallahassee FL32310 United States Scientific Computing Department Materials Science and Engineering Program High Performance Material Institute Condensed Matter Theory National High Magnetic Field Laboratory Florida State University TallahasseeFL32310 United States Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States Department of Physics Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology CambridgeMA02139 United States

High-performance materials rely on small reorganization energies to facilitate both charge separation and charge transport. Here, we performed DFT calculations to predict small reorganization energies of rectangular silicene nanoclusters with hydrogen-passivated edges denoted by H-SiNC. We observe that across all geometries, H-SiNCs feature large electron affinities and highly stabilized anionic states, indicating their potential as n-type materials. Our findings suggest that fine-tuning the size of H-SiNCs along the "zigzag" and "armchair" directions may permit the design of novel n-type electronic materials and spinctronics devices that incorporate both high electron affinities and very low internal reorganization energies. Copyright © 2017, The Authors. All rights reserved.

关键词： Silicene

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Reconfiguration of Smart Distribution Network in the Presence of Renewable DG's Using GWO Algorithm

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IOP Conference Series: Earth and Environmental science 2017年第1期83卷

作者： M. Siavash C. Pfeifer A. Rahiminejad B. Vahidi Department of Material Science and Process Engineering University of Natural Resources and Life Sciences Vienna Austria Department of Electrical and Computer Science Esfarayen University of Technology Esfarayen North Khorasan Iran Department of Electrical Engineering Amirkabir University of Technology Tehran Iran

In this paper, the optimal reconfiguration of smart distribution system is performed with the aim of active power loss reduction and voltage stability improvement. The distribution network is considered equipped with wind turbines and solar cells as Renewable DG's (RDG's). Because of the presence of smart metering devices, the network state is known accurately at any moment. Based on the network conditions (the amount of load and generation of RDG's), the optimal configuration of the network is obtained. The optimization problem is solved using a recently introduced method known as Grey Wolf Optimizer (GWO). The proposed approach is applied on 69-bus radial test system and the results of the GWO are compared to those of Particle Swarm Optimization (PSO), and Genetic Algorithm (GA). The results show the effectiveness of the proposed approach and the selected optimization method.

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Magnetoresistance in the superconducting state at the (111) LaAlO3/SrTiO3 interface

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Physical Review B 2017年第13期96卷 134502-134502页

作者： S. Davis Z. Huang K. Han Ariando T. Venkatesan V. Chandrasekhar Graduate Program in Applied Physics Northwestern University 2145 Sheridan Road Evanston Illinois 60208 USA NUSNNI-Nanocore National University of Singapore 117411 Singapore Department of Physics National University of Singapore 117551 Singapore NUS Graduate School for Integrative Sciences & Engineering National University of Singapore 117456 Singapore Department of Electrical and Computer Engineering National University of Singapore 117576 Singapore Department of Material Science and Engineering National University of Singapore 117575 Singapore Department of Physics and Astronomy Graduate Program in Applied Physics Northwestern University 2145 Sheridan Road Evanston Illinois 60208 USA

Condensed-matter systems that simultaneously exhibit superconductivity and ferromagnetism are rare due the antagonistic relationship between conventional spin-singlet superconductivity and ferromagnetic order. In materials in which superconductivity and magnetic order are known to coexist (such as some heavy-fermion materials), the superconductivity is thought to be of an unconventional nature. Recently, the conducting gas that lives at the interface between the perovskite band insulators LaAlO3 (LAO) and SrTiO3 (STO) has also been shown to host both superconductivity and magnetism. Most previous research has focused on LAO/STO samples in which the interface is on the (001) crystal plane. Relatively little work has focused on the (111) crystal orientation, which has hexagonal symmetry at the interface, and has been predicted to have potentially interesting topological properties, including unconventional superconducting pairing states. Here we report measurements of the magnetoresistance of (111) LAO/STO heterostructures at temperatures at which they are also superconducting. As with the (001) structures, the magnetoresistance is hysteretic, indicating the coexistence of magnetism and superconductivity, but in addition, we find that this magnetoresistance is anisotropic. Such an anisotropic response is completely unexpected in the superconducting state and suggests that (111) LAO/STO heterostructures may support unconventional superconductivity.

关键词： Coherence length Ferromagnetism Magnetotransport Phase diagrams Superconducting phase transition Superconductivity Hall bar Resistivity measurements

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Two-dimensional heterojunction interlayer tunnel FET (Thin-TFET): From theory to applications

Two-dimensional heterojunction interlayer tunnel FET (Thin-T...

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International Electron Devices Meeting (IEDM)

作者： Mingda Oscar Li Rusen Yan Debdeep Jena Huili Grace Xing Cornell University Ithaca NY US School of Electrical and Computer Engineering Cornell University NY USA Department of Material Science and Engineering Cornell University NY USA

ISBN: (纸本)9781509039036

We review the conception and development of two-dimensional heterojunction interlayer field effect transistor (Thin-TFET), where a steep subthreshold swing (SS) and a high on-current are estimated theoretically. The Thin-TFET has been experimentally demonstrated using WSe 2 /SnSe 2 stacked heterostructures, where the SS is mostly likely limited by the interfacial trap density of states and the parasitic MOSFET. Due to its vertical stacking structure, Thin-TFET intrinsically has a smaller gate-drain capacitance compared to the conventional lateral pin-TFET. In turn, this results in mitigated Miller Effect in Thin-TFET thus reducing dynamic energy dissipation in circuits.

关键词： Logic gates TFETs Tunneling MOSFET Two dimensional displays Heterojunctions

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Size effect on memristive properties of nanocrystalline ZnO film for resistive synaptic devices

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Journal of Physics: Conference Series 2018年第8期1124卷

作者： N A Shandyba I V Panchenko R V Tominov V A Smirnov M I Pelipenko E G Zamburg Y H Chu Department of Nanotechnology and Microsystems Southern Federal University Taganrog 347928 Russia UAC company BERIEV Taganrog 347923 Russia Department of Electrical & Computer Engineering National University of Singapore 117582 Singapore Department of Materials Science and Engineering National Chiao Tung University Hsinchu 1001 Taiwan Department of Electrophysics National Chiao Tung University Hsinchu 1001 Taiwan Institute of Physics Academia Sinica Taipei 11529 Taiwan Material and Chemical Research Laboratories Industrial Technology Research Institute Hsinchu 31040 Taiwan

Size effect on memristive properties of nanocrystalline ZnO film was investigated. It was shown, ZnO film thickness increase from 6.23±1.54 nm to 47.60±8.12 nm leads to high-resistance state (HRS) increase from 3.26±2.14 MΩ to 700.32±300.83 MΩ and low-resistance state (LRS) from 0.03±0.02 MΩ to 0.09±0.03 MΩ, respectively. The HRS/LRS ratio increases from 108 to 7742. The results can be useful for based on nanocrystalline ZnO films resistive synaptic devices manufacturing.

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Superabsorbers: Efficient Mid-Infrared Light Confinement within Sub-5-nm Gaps for Extreme Field Enhancement (Advanced Optical materials 17/2017)

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Advanced Optical materials 2017年第17期5卷

作者： Dengxin Ji Alec Cheney Nan Zhang Haomin Song Jun Gao Xie Zeng Haifeng Hu Suhua Jiang Zongfu Yu Qiaoqiang Gan Department of Electrical Engineering The State University of New York at Buffalo Buffalo NY 14260 USA Material Science Department Fudan University Shanghai 200433 China College of Information Science and Engineering Northeastern University Shenyang 110819 China Department of Electrical and Computer Engineering University of Wisconsin Madison WI 53705 USA

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Superconductivity and frozen electronic states at the (111) LaAlO3/SrTiO3 interface

arXiv

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arXiv 2017年

作者： Davis, S. Huang, Z. Han, K. Ariando Venkatesan, T. Chandrasekhar, V. Graduate Program in Applied Physics Department of Physics and Astronomy Northwestern University 2145 Sheridan Road EvanstonIL60208 United States NUSNNI-Nanocore National University of Singapore 117411 Singapore Department of Physics National University of Singapore 117551 Singapore NUS Graduate School for Integrative Sciences & Engineering National University of Singapore 117456 Singapore NUSNNI-NanoCore National University of Singapore 117411 Singapore Department of Physics National University of Singapore 117542 Singapore Department of Electrical and Computer Engineering National University of Singapore 117576 Singapore Department of Material Science and Engineering National University of Singapore 117575 Singapore

In spite of Anderson’s theorem1, disorder is known to affect superconductivity in conventional s-wave superconductors2–11. In most superconductors, the degree of disorder is fixed during sample preparation. Here we report measurements of the superconducting properties of the two-dimensional gas that forms at the interface between LaAlO3 (LAO) and SrTiO3 (STO) in the (111) crystal orientation, a system that permits in situ tuning of carrier density and disorder by means of a back gate voltage Vg. Like the (001) oriented LAO/STO interface12–15, superconductivity at the (111) LAO/STO interface can be tuned by Vg. In contrast to the (001) interface, superconductivity in these (111) samples is anisotropic, being different along different interface crystal directions, consistent with the strong anisotropy already observed other transport properties at the (111) LAO/STO interface16,17. In addition, we find that the (111) interface samples "remember" the backgate voltage VF at which they are cooled at temperatures near the superconducting transition temperature Tc, even if Vg is subsequently changed at lower temperatures. The low energy scale and other characteristics of this memory effect ( Copyright © 2017, The Authors. All rights reserved.

关键词： Aluminum compounds

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Novel III-N heterostructure devices for low-power logic and more

Novel III-N heterostructure devices for low-power logic and ...

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IEEE Conference on Nanotechnology

作者： P. Fay W. Li L. Cao K. Pourang S. M. Islam C. Lund S. Saima H. Ilatikhameneh T. Amin J. Huang R. Rahman D. Jena S. Keller G. Klimeck Dept. of Electrical Engineering Univ. of Notre Dame Notre Dame IN USA Dept. of Electrical and Computer Engineering and Dept. of Material Science Engineering Cornell University Ithaca NY USA Univ. of California Santa Barbara Santa Barbara CA USA Dept. of Electrical and Computer Engineering Purdue University West Lafayette IN USA

Future ultra-scaled logic and low-power systems require fundamental advances in semiconductor device technology. Due to power constraints, device concepts capable of achieving switching slopes (SS) steeper than 60 mV/decade are essential if scaling of conventional computational architectures is to continue. Likewise, ultra low power systems also benefit from devices capable of maintaining performance under low-voltage operation. Towards this end, tunneling field effect transistors (TFETs) are one promising alternative. While much work has been devoted to realizing TFETs in Si, Ge, and narrow-gap III-V materials, the use of III-N heterostructures and the exploitation of polarization engineering offers some unique opportunities. From physics-based simulations, performance of GaN/InGaN/GaN heterostructure TFETs appear capable of delivering average SS approaching 20 mV/decade over 4 decades of drain current, and on-current densities exceeding 100 μA/μm in aggressively scaled nanowire configurations. Experimental progress towards realizing III-N based TFETs includes demonstration of GaN/InGaN/GaN backward tunnel diodes by both MOCVD and MBE, and nanowires grown selectively by MBE and used as the basis for device fabrication.

关键词： TFETs Tunneling Performance evaluation Computational modeling Fabrication Gallium nitride

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Electronic structure of the dilute magnetic semiconductor Ga1-xMnxP from hard X-ray photoelectron spectroscopy and hard X-ray angle-resolved photoemission

arXiv

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arXiv 2018年

作者： Keqi, A. Gehlmann, M. Conti, G. Nemšák, S. Rattanachata, A. Minár, J. Plucinski, L. Rault, J.E. Rueff, J.P. Scarpulla, M. Hategan, M. Pálsson, G.K. Conlon, C. Eiteneer, D. Saw, A.Y. Gray, A.X. Kobayashi, K. Ueda, S. Dubon, O.D. Schneider, C.M. Fadley, C.S. Department of Physics University of California Davis DavisCA95616 United States Materials Sciences Division Lawrence Berkeley National Laboratory BerkeleyCA94720 United States Peter-Grünberg-Institut PGI-6 Forschungszentrum Jülich Jülich52425 Germany New Technologies-Research Center University of West Bohemia Pilsen306 14 Czech Republic Synchrotron SOLEIL Saint-Aubin91192 France Department of Material Science and Engineering University of California Berkeley BerkeleyCA94720 United States Department of Electrical and Computer Engineering University of Utah Salt Lake CityUT84112 United States Department of Physics Uppsala University UppsalaSE-751 20 Sweden Department of Physics Temple University PhiladelphiaPA19122 United States Japan Atomic Energy Agency 1-1-1 Kouto Sayo-cho Sayo-gun Hyogo679-5148 Japan 1-1-1 Kouto Sayo-cho Sayo-gun Hyogo679-5148 Japan Research Center for Advanced Measurement and Characterization NIMS 1-2-1 Sengen TsukubaIbaraki305-0047 Japan

We have investigated the electronic structure of the dilute magnetic semiconductor (DMS) Ga0.98Mn0.02P and compared it to that of an undoped GaP reference sample, using hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV. We present experimental data, as well as theoretical calculations, in order to understand the role of the Mn dopant in the emergence of ferromagnetism in this material. Both core-level spectra and angle-resolved or angle-integrated valence spectra are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of Ga0.97Mn0.03As and GaAs (Gray et al. Nature materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP. Copyright © 2018, The Authors. All rights reserved.

关键词： III-V semiconductors

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Sulfur cathode material conductivity improving by carbons admixture: technology and characterization

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materials Today: Proceedings 2018年 5卷 S109-S114页

作者： Gražyna Simha Martynková Karel Chrobáček Lenka Pazourková Savas Aydin Denis Pivoňka Boris Novosad Nanotechnology Centre VŠB - Technical University of Ostrava 17. listopadu 15 Ostrava Poruba 708 33 Czech Republic IT4Innovation Center VŠB - Technical University of Ostrava 17. listopadu 15 Ostrava Poruba 708 33 Czech Republic Faculty of Electrical Engineering and Computer Science VŠB - Technical University of Ostrava 17. listopadu 15 Ostrava Poruba 708 33 Czech Republic Institute of Natutal Sciences Metallurgical and Material engineering Physics Sakarya University Esentepe Campus 54187 Sakarya Turkey

Sulfur (S) is announced as future cathode material with a theoretical specific capacity of 1672 mAh/g,∼5 times higher than those of traditional cathode materials based on transition metal oxides or phosphates. S based battery is partly limited by the problems of low electrical conductivity of sulfur, dissolution of polysulfides in electrolyte and volume expansion of sulfur during discharge. The high effort to find materials to overtake these disadvantages is leading to conductive materials like S. The carbons are well known for very good conductivity along the graphene layers. For this purpose, 2 types of carbons were tested using mechanofusion milling process to create interaction of sulfur and carbon as two inorganic materials. Conductivity was tested, and improvement was shown. To solve problems with dissolution of polysulfides in electrolytes the intercalation of sulfur to clay interlayer space was designed.

关键词： Sulphur Exfoliation Organic modification Particles morphology Structural properties

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