We discuss a novel approach to the formation of deposited stacked-gate structures that combines several different processing steps into a single chamber with multi-function oxidation, passivation and deposition capabi...
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We discuss a novel approach to the formation of deposited stacked-gate structures that combines several different processing steps into a single chamber with multi-function oxidation, passivation and deposition capabilities. To form a Si-based stacked gate structures the following in-situ steps can be performed i) a final cleaning/passivation of the Si surface, ii) formation of the SiO2/Si interface, iii) deposition of a single, or multi-layer dielectric, e.g., SiO2, or an oxide/nitride/oxide (ONO) structure, and iv) deposition of a polysilicon gate electrode. We discuss the fabrication and performance of test device structures that combine remote plasma and rapid thermal processing steps, but omit the polysilicon deposition, and use an Al gate electrode instead. These structures are use to demonstrate the effectiveness of different interface formation processes.
An integrated sequence of ex-situ wet-chemistry, and on-line low-temperature remote plasma-assisted techniques, for fabricating device-quality Si/SiO2 interfaces on Si(111) wafers is reported. Three factors contribute...
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An integrated sequence of ex-situ wet-chemistry, and on-line low-temperature remote plasma-assisted techniques, for fabricating device-quality Si/SiO2 interfaces on Si(111) wafers is reported. Three factors contribute to the device quality interfaces i) the orientation of the Si surface relative to a perfect (111) alignment, ii) the pH of the final HF/NH4F rinse used in the pre-deposition wet-chemistry processing, and iii) the specific plasma-assisted oxidation and deposition processes used to form the SiO2/Si heterostructure.
作者：
ERKER, GJDODDS, DEKRZYMIEN, WADavid E. Dodds was born in Saskatoon
Canada in 1945. He received the B. Eng. and MSc. degrees from the University of Saskatchewan in 1966 and 1968 respectively. He worked with Bell Northern Research (Ottawa) on PBX design in 1969 1972 and 1978. Since 1969 he has been with the University of Saskatchewan where he is currently Professor of Electrical Engineering. He teaches courses in electronics and communications and also presents short courses on the fundamentals of telephony. Current research interests are in data transmission signal processing architecture and frame synchronization for PCM and spread spectrum systems. He has been granted five patents relating to commercial products in delta-modulation telephone line interfacing and computer data transmission. In 1986 he was on sabbatical leave at BNR Inc. and worked with an ANSI committee on the standardization of FDDI-II a combined voice and data system. Mr. Dodds is a Registered Consulting Engineer in Saskatchewan. Witold A. Krzyden received his MSc. (Eng.) and Ph.D. degrees (both in Electrical Engineering) in 1970 and 1978
respectively from the Poznan Technical University in Poznan Poland. He was awarded the Minister's of Science and Technology Prize of Excellence for his Ph.D. thesis. From 1970 to 1978 he was a Research Engineer and Teaching Assistant and then from 1978 to 1980 an Assistant Professor of Electrical Engineering at the Poznan Technical University. In 1980 he won a Dutch Government Research Fellowship at the Twente University of Technology in Enschede the Netherlands for the year of 1980/1981. In the following year of 1981/82 he was a Research Assistant Professor there. From 1982 to 1986 he was an Assistant Professor of Electrical Engineering at Lakehead University in Thunder Bay Ontario Canada. In 1986 he joined the Univeristy of Alberta and Alberta Telecommunications Research Centre (now Telecommunications Research Laboratories or TRLabs) as an Associate Professor of Electrical Engineering. Currently he is a Professor of E
The 5.5 km range of the basic rate ISDN loop has been extended by using a negative impedance amplifier and by using a 2 wire/4 wire (2w/4w) amplifier. The negative impedance amplifier extends the range of the loop by ...
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The 5.5 km range of the basic rate ISDN loop has been extended by using a negative impedance amplifier and by using a 2 wire/4 wire (2w/4w) amplifier. The negative impedance amplifier extends the range of the loop by 1.0 km, whereas the 2w/4w amplifier extends the range by 1.5 km at the expense of increased complexity. As part of the amplifer design, a resistor/capacitor network has been developed which closely matches the characteristic impedance of telephone cable. Error rate tests have been conducted using various lengths of cable and an operating ISDN line.
Multimedia requires new techniques for storage and retrieval of data objects. Based on the concept of abstract data types MOSS is presented as a multimedia-object storage system to experiment with new methods of manag...
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Communication of multimedia data among multiple parties can be costly in terms of use of network resources if guaranteed quality of service is requested. We believe, however, that knowledge of the functional character...
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作者：
ROSENBAUM, J[&lowast]Jan Rosenbaum has worked in the imaging industry for 30 years
first as a newspaper photographer and assistant professor of photography then as a camera designer and image quality specialist in the medical and computer graphics industries. He holds a B.F.A. in art from Wayne State University an M.F.A. in photography from Cranbrook Academy of Art an M.S. in imaging and photographic science from Rochester Institute of Technology and an M.S. in management of technology from Polytechnic University of New York. Until recently he was head of the optical and color science group at a division of Agfa-Gevaert.
The medical imaging industry offers an example of what can happen when an industry ignores threats from new technologies and fails to respond to a change in the paradigm upon which it is based. The lessons learned fro...
The medical imaging industry offers an example of what can happen when an industry ignores threats from new technologies and fails to respond to a change in the paradigm upon which it is based. The lessons learned from these basic errors in management may help those in other industries that operate at technology's edge to avoid obsolescence. The company discussed is, or was, real. As of summer, 1993, the last remaining vestige of the company was sold off to a small group of employees and their backers. The number of employees, once 900, is now fewer than 100. Most of them are looking for a way to stay in business.
This paper presents a method used to improve the current personnel evaluation procedures in a large company. The method is grounded on the semiotic analysis of stories justifying judgments. Categories and verbal value...
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This paper presents a method used to improve the current personnel evaluation procedures in a large company. The method is grounded on the semiotic analysis of stories justifying judgments. Categories and verbal values are represented by using concepts of fuzzy set theory. Particularly, a method is presented to measure the membership value of an individual in a predefined fuzzy category.< >
Optical second harmonic generation (SHG) is a highly surface‐sensitive probe for studying crystalline Si surfaces because the inversion symmetry is broken and electric dipole optical SHG processes forbidden in the bu...
Optical second harmonic generation (SHG) is a highly surface‐sensitive probe for studying crystalline Si surfaces because the inversion symmetry is broken and electric dipole optical SHG processes forbidden in the bulk are allowed. The polarized optical SHG from a perfectly oriented Si surface is inherently anisotropic, varying periodically as the in‐surface projection of the polarization vector of the incident laser is rotated about a normal to the surface. The harmonic contributions to the angular anisotropy from the surface are characteristic of the surface bonding, and are modified by misorientation, chemical termination, as well as thermal treatments. This paper reviews the results of our previously reported optical SHG studies on Si(111) wafers with misorientations of 0°–5°±0.5° in the [112̄] direction for Si–H or Si–O terminated surfaces. Azimuthal anisotropy data are compared with an empirical model for the SHG intensity that is based on (i) the nonlinear response of anharmonic oscillators, and (ii) a phenomenological theory of azimuthal anisotropies expected for different surface orientations. This model is used as a framework for estimating ’’effective‘‘ resonance energies from single wavelength experiments, and in particular, for providing insights into the microscopic mechanisms that can contribute to the changes in these resonance energies with respect to different processing conditions. For example, important differences between thermally grown and plasma‐oxidized interfaces are identified, and correlations between SHG and electrical performance of the Si–SiO2 interfaces are discussed.
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