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SAW Resonators on 15°YX-LiNbO3/SiO2/Sapphire Substrate with Excellent Electromechanical Coupling

SAW Resonators on 15°YX-LiNbO3/SiO2/Sapphire Substrate with...

2023 Joint Conference of the European Frequency and Time Forum and IEEE International Frequency Control Symposium, EFTF/IFCS 2023

作者： Wu, Jinbo Chen, Yang Zhang, Liping Zheng, Pengcheng Yao, Hulin Fang, Xiaoli Huang, Kai Zhang, Shibin Ou, Xin Shanghai Institute of Microsystem and Information Technology The State Key Laboratory of Functional Materials for Informatics Shanghai China

ISBN: (纸本)9798350311426

In this work, the shear horizontal surface acoustic wave (SH-SAW) resonators were demonstrated on 15° YX-LiNbO3/SiO2/sapphire (LiNbO3-on-sapphire, LNOS) substrate. Compared to the reported gigahertz SAW resonators based on piezoelectric heterogeneous substrates, the fabricated resonator in this work exhibits a state-of-the-art electromechanical coupling coefficient (k2) of 42.2%, a maximum Bode-Q (Qmax) of 1457 and an excellent figure of merit (k2×Qmax) of 615. Besides, several methods for suppressing transverse modes were implemented and compared. Tilted interdigital-transducers combined with the apodization technique can suppress the transverse modes more thoroughly while maintaining decent Q values. Overall, SAW devices based on the LNOS substrate have great potential for RF filters with low insertion loss, steep skirts, and wide bandwidth. © 2023 IEEE.

关键词： electromechanical coupling coefficient LiNbO3-on-insulator RF loss sapphire Surface acoustic wave resonator transverse mode

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Multilevel optoelectronic hybrid memory based on N-doped Ge_(2)Sb_(2)Te_(5)film with low resistance drift and ultrafast speed

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Chinese Physics B 2023年第10期32卷 724-730页

作者：吴奔魏涛胡敬王瑞瑞刘倩倩程淼李宛飞凌云刘波 Suzhou Key Laboratory for Nanophotonic and Nanoelectronic Materials and Its Devices School of Materials Science and EngineeringSuzhou University of Science and TechnologySuzhou 215009China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

Multilevel phase-change memory is an attractive technology to increase storage capacity and density owing to its high-speed,scalable and non-volatile ***,the contradiction between thermal stability and operation speed is one of key factors to restrain the development of phase-change ***,N-doped Ge_(2)Sb_(2)Te_(5)-based optoelectronic hybrid memory is proposed to simultaneously implement high thermal stability and ultrafast operation *** picosecond laser is adopted to write/erase information based on reversible phase transition characteristics whereas the resistance is detected to perform information *** show that when N content is 27.4 at.%,N-doped Ge_(2)Sb_(2)Te_(5)film possesses high ten-year data retention temperature of 175℃and low resistance drift coefficient of 0.00024 at 85℃,0.00170 at 120℃,and 0.00249 at 150℃,respectively,owing to the formation of Ge–N,Sb–N,and Te–N *** SET/RESET operation speeds of the film reach 520 ps/13 *** parallel,the reversible switching cycle of the corresponding device is realized with the resistance ratio of three orders of ***-level reversible resistance states induced by various crystallization degrees are also obtained together with low resistance drift ***,the N-doped Ge_(2)Sb_(2)Te_(5)thin film is a promising phase-change material for ultrafast multilevel optoelectronic hybrid storage.

关键词： multilevel optoelectronic hybrid memory N-doped Ge_(2)Sb_(2)Te_(5)thin film low resistance drift ultrafast speed

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Ultra-Low Crosstalk, Flat Pass-band and Low Loss CWDM (De-)Multiplexer based on PSO Algorithm

Ultra-Low Crosstalk, Flat Pass-band and Low Loss CWDM (De-)M...

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2023 Opto-Electronics and Communications Conference, OECC 2023

作者： Liu, Xiang Zhao, Yingxuan Shanghai Institute of Microsystem and Information Technology State Key Laboratory of Functional Materials for Informatics Chinese Academy of Sciences Shanghai China

We obtain an ultra-low crosstalk, flat pass-band (de-)multiplexer using PSO algorithm. The results show that the (de-)multiplexer achieves a pass-band flatness of 15 nm, a crosstalk below -33.4 dB and insertion loss b... 详细信息

ISBN: (纸本)9781665462136

关键词： Crosstalk

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An LLC Converter Based on SiC MOSFETs and Minimized-leakage-inductance Planar Transformer

An LLC Converter Based on SiC MOSFETs and Minimized-leakage-...

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2023 IEEE International Conference on Power Science and technology, ICPST 2023

作者： Zhou, Xuetong Tian, Yufei Quan, Yuhua Feng, Junhong Lu, Wenyu Zheng, Li Cheng, Xinhong Yu, Yuehui Shanghai Institute of Microsystem and Information Technology State Key Laboratory of Functional Materials for Informatics Chinese Academy of Science Shanghai China

ISBN: (纸本)9798350311358

Wide band gap devices and planar transformers help improving the power density of LLC converters. However, the parasitic parameters of planar transformer make the optimal operating point of the converter offset and reduce the efficiency. In this paper, a SiC MOSFETs based LLC resonant converter with an optimized planar transformer is modeled, analyzed and verified by experiments. The leakage inductance of the proposed winding structure is only 50% of the fully interleaved structure. The proposed converter is more ideal with more accurate resonant frequency and gain. The measured resonant frequency is 99.67 kHz, which is only 0.33% lower than the design value of 100 kHz. With the lower loss, the more ideal transformer increases the efficiency of LLC converter by 3%. Furthermore, the gain of the LLC converter at resonant frequency is higher and the gain-frequency and gain-load curves are more ideal. © 2023 IEEE.

关键词： Natural frequencies

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A self-driven photodetector based on a SnS_(2)/WS_(2) van der Waals heterojunction with an Al_(2)O_(3) capping layer

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Chinese Physics B 2023年第1期32卷 585-591页

作者：王祥骏林钰恒刘潇邓煊华贲建伟俞文杰朱德亮刘新科 College of Materials Science and Engineering Institute of Microelectronics(IME)Guangdong Research Center for Interfacial Engineering of Functional MaterialsShenzhen UniversityShenzhen 518060China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

Photodetectors based on two-dimensional(2D) materials have attracted considerable attention because of their unique properties. To further improve the performance of self-driven photodetectors based on van der Waals heterojunctions, a conductive band minimum(CBM) matched self-driven SnS_(2)/WS_(2) van der Waals heterojunction photodetector based on a SiO2/Si substrate has been designed. The device exhibits a positive current at zero voltage under 365 nm laser *** is attributed to the built-in electric field at the interface of the SnS_(2) and WS_(2) layer, which will separate and transport the photogenerated carriers, even at zero bias voltage. In addition, the Al_(2)O_(3) layer is covered by the surface of the SnS_(2)/WS_(2) photodetector to further improve the performance, because the Al_(2)O_(3) layer will introduce tensile stress on the surface of the 2D materials leading to a higher electron concentration and smaller effective mass of electrons in the films. This work provides an idea for the research of self-driven photodetectors based on a van der Waals heterogeneous junction.

关键词： SnS_(2)/WS_(2)heterogeneous junction Al_(2)O_(3)layer self-driven photodetector

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A hybrid nickel/iron-pyromellitic acid electrocatalyst for oxygen evolution reaction

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Nano Research 2024年第4期17卷 2481-2491页

作者： Guoqi Li Lin Li Wenlong Li Fusheng Li Chunze Yuan Nian Zhang Hui Zhang Tsu-Chien Weng School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Center for Transformative Science ShanghaiTech UniversityShanghai 201210China State Key Lab of Fine Chemicals Institute of Artificial PhotosynthesisDUT-KTH Joint Education and Research Center on Molecular DevicesDalian University of Technology(DUT)Dalian 116024China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China

The migration of protons during the oxygen evolution reaction(OER)is a key factor that affects the performance of OER *** enhance proton transportation,we designed a catalyst based on nickel/iron-pyromellitic acid(NiFe-PMA)prepared by the electrochemical deposition *** catalyst exhibited a low overpotential of 188 mV at a current density of 10 mA·cm^(-2),a Tafel slope of 28.2 mV·dec^(-1),and long-term stability for 30 days with a current of 50 mA·cm^(-2).We characterized the NiFe-PMA catalyst using various techniques,including Fourier transform infrared(FTIR)spectroscopy,Raman spectroscopy,X-ray photoelectron spectroscopy(XPS),X-ray absorption spectroscopy(XAS),transmission electron microscopy(TEM),scanning electron microscopy(SEM),and inductively coupled plasma-optical emission spectrometry(ICP-OES).Our results showed that NiFe-PMA contains nickel,iron atoms,and both coordinated and uncoordinated carboxylate ***,XPS data confirmed that carboxylate ligands could adjust the outer electronic structure of metal ions,resulting in the high valence state of Ni in *** result of XAS indicated that the nickel atoms present in the catalyst might be easier to maintain a higher chemical *** investigations using kinetic isotope effects(KIEs)and proton inventory revealed that the uncoordinated carboxylic protons played a crucial role in receiving protons during the OER,which promoted the proton transfer of the rate-determining step of the *** novel electrocatalysts provide a new strategy for designing more active and cost-effective catalysts for the OER.

关键词： nickel/iron-pyromellitic acid oxygen evolution reaction kinetic isotope effects

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Electronic properties and interfacial coupling in Pb islands on single-crystalline graphene

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Chinese Physics B 2022年第3期31卷 517-520页

作者： Jing-Peng Song Ang Li State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China University of Chinese Academy of Sciences Beijing 100049 China

Introducing metal thin films on two-dimensional(2D) material may present a system to possess exotic properties due to reduced dimensionality and interfacial effects. We deposit Pb islands on single-crystalline graphene on a Ge(110)substrate and studied the nano-and atomic-scale structures and low-energy electronic excitations with scanning tunneling microscopy/spectroscopy(STM/STS). Robust quantum well states(QWSs) are observed in Pb(111) islands and their oscillation with film thickness reveals the isolation of free electrons in Pb from the graphene substrate. The spectroscopic characteristics of QWSs are consistent with the band structure of a free-standing Pb(111) film. The weak interface coupling is further evidenced by the absence of superconductivity in graphene in close proximity to the superconducting Pb ***, the Pb(111) islands on graphene/Ge(110) are free-standing in nature, showing very weak electronic coupling to the substrate.

关键词： scanning tunneling microscopy graphene quantum well states superconducting proximity effect

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Combination of a reaction cell and an ultra-high vacuum system for the in situ preparation and characterization of a model catalyst

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Nuclear Science and Techniques 2023年第5期34卷 13-21页

作者： Yi-Jing Zang Shu-Cheng Shi Yong Han Hui Zhang Wei-Jia Wang Peng Liu Mao Ye Zhi Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China Center for Transformative Science ShanghaiTech UniversityShanghai 201210China University of Chinese Academy of Sciences Beijing 100049China

An in-depth understanding of the structure-activity relationship between the surface structure,chemical composition,adsorption and desorption of molecules,and their reaction activity and selectivity is necessary for the rational design of high-performance ***,we present a method for studying catalytic mechanisms using a combination of in situ reaction cells and surface science *** proposed system consists of four parts:preparation chamber,temperatureprogrammed desorption(TPD)chamber,quick load-lock chamber,and in situ reaction *** preparation chamber was equipped with setups based on the surface science techniques used for standard sample preparation and characterization,including an Ar+sputter gun,Auger electron spectrometer,and a low-energy electron *** a well-defined model catalyst was prepared,the sample was transferred to a TPD chamber to investigate the adsorption and desorption of the probe molecule,or to the reaction cell,to measure the catalytic activity.A thermal desorption experiment for methanol on a clean Cu(111)surface was conducted to demonstrate the functionality of the preparation and TPD ***,the repeatability of the in situ reaction cell experiment was verified by CO_(2) hydrogenation on the Ni(110)*** a reaction pressure of 800 Torr at 673 K,turnover frequencies for the methanation reaction and reverse water-gas shift reaction were 0.15 and 7.55 Ni atom^(-1) s^(-1),respectively.

关键词： Surface science Model catalysts Ultra-high vacuum Temperature-programmed desorption In situ reaction cell

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Transition-edge sensors using Mo/Au/Au tri-layer films

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Chinese Physics B 2023年第2期32卷 509-513页

作者：王沪兵吕越李冬雪赵越高波王镇 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China CAS Center for Excellence in Superconducting Electronics(CENSE) Shanghai 200050China University of Chinese Academy of Sciences Beijing 100049China

The proximity effect to reduce the transition temperature of a superconducting film is frequently used in transitionedge sensors. Here, we develop these transition-edge sensors using Mo/Au/Au tri-layer films to detect soft x-rays. They are equipped with an overhanging photon absorber. We reduce the fabrication complexity by integrating the sensor patterning with the tri-layer film formation. We determine the electro-thermal parameters of the sensors through a series of resistance vs. temperature and current vs. voltage measurements. We also demonstrate their energy-resolving capability by using a55Fe radioactive x-ray source. The best energy resolution was approximately 6.66 eV at 5.9 keV, with a theoretical count rate of 500 Hz.

关键词： transition-edge sensors proximity effect electroplating

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Quasi-one-dimensional characters in topological semimetal TaNiTe_(5)

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Chinese Physics B 2023年第5期32卷 586-590页

作者：马妮王德阳黄本锐李凯仪宋靖鹏刘建忠梅红萍叶茂李昂 State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China

One-dimensional(1D)topological insulators are superior for low-dissipation applications owing to the 1D character of surface states where scatterings other than prohibited backscattering are further *** the proposed candidates for 1D topological materials,TaNiTe_(5)has attracted intensive attention for its quasi-one-dimensional(quasi-1D)crystalline *** this study,we identify the chain-like construction and anisotropic electronic states on TaNiTe_5 surface with scanning tunneling *** electron scatterings are largely suppressed even with chromium impurities deposited on the surface and magnetic field applied normal to the surface,which endows TaNiTe_5 great potential for low-dissipation spintronic applications.

关键词： quasi-one-dimensional magnetic impurity scanning tunneling microscopy

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