检索结果-内蒙古大学图书馆

Data Storage: Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors (Adv. Mater. 7/2019)

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Advanced Materials 2019年第7期31卷

作者： Xiaobing Yan Yifei Pei Huawei Chen Jianhui Zhao Zhenyu Zhou Hong Wang Lei Zhang Jingjuan Wang Xiaoyan Li Cuiya Qin Gong Wang Zuoao Xiao Qianlong Zhao Kaiyang Wang Hui Li Deliang Ren Qi Liu Hao Zhou Jingsheng Chen Peng Zhou National‐Local Joint Engineering Laboratory of New Energy Photovoltaic Devices Key Laboratory of Digital Medical Engineering of Hebei Province College of Electron and Information Engineering Hebei University Baoding 071002 P. R. China Department of Materials Science and Engineering National University of Singapore Singapore 117576 Singapore State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Giantec Semiconductor Inc. Shanghai 201203 China

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A Digital Multiplexing and Real-time Refresh Dimming Control Circuit Used in LED Driver for Multiple LED strings 13

A Digital Multiplexing and Real-time Refresh Dimming Control...

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2016 13th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT)

作者： Kezhi Li Wengao Lu Bo Wang Xin'an Wang Yuze Niu Guangyi Chen Yacong Zhang Zhongjian Chen Peking University Shenzhen Graduate School Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (纸本)9781467397209

This paper presents a digital dimming control circuit used in a light-emitting diode（LED） driver, allowing it to dim multiple LED strings with only two input ports which receive serial data accompanied with synchronous clock. A multiplexing technique is used to simplify the control circuit, using one DAC to transfer all the dimming messages for each string, and a real-time refresh technique is used to make the transferred dimming voltage keep a high accuracy all the time. The circuit is friendly compatible with the linear current regulator and pulsewidth modulation（PWM） dimming methods. To get a precise dimming control, we build a 10-bit segment R-2R DAC. The simulation results show the dimming voltages for each LED string keep the errors less than 0.5LSB compared with the designed voltages.

关键词： Estimation Field programmable gate arrays OFDM Modulation Filtration Clocks Signal processing algorithms

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Nonvolatile Memory: Performance‐Enhancing Selector via Symmetrical Multilayer Design (Adv. Funct. Mater. 13/2019)

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Advanced Functional Materials 2019年第13期29卷

作者： Yiming Sun Xiaolong Zhao Cheng Song Kun Xu Yue Xi Jun Yin Ziyu Wang Xiaofeng Zhou Xianzhe Chen Guoyi Shi Hangbing Lv Qi Liu Fei Zeng Xiaoyan Zhong Huaqiang Wu Ming Liu Feng Pan Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 P. R. China National Center for Electron Microscopy in Beijing Key Laboratory of Advanced Materials (MOE) State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China Institute of Microelectronics Tsinghua University Beijing 100084 P. R. China

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Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS

Investigation of current collapse mechanism of LPCVD Si3N4 p...

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International Symposium on Power Semiconductor devices and Ics (ISPSD)

作者： Xinhua Wang Xuanwu Kang Jinhan Zhang Ke Wei Sen Huang Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

In this work, we investigated the current collapse mechanism of AlGaN/GaN high-electron mobility transistors (HEMTs) with LPCVD Si 3 N 4 passivation. With newly developed fast soft-switched current-DLTS techniques, we achieved current acquisition within 100 ns after each stress pulse and with high sampling rate up to 5 MSa/s. A single trap level (~66 meV) and capture cross section On (-1.05×10 -20 cm -2 ) has been found within the AlGaN/GaN HEMTs surface. Moreover, this trap level is confirmed by low-temperature Constant-Capacitance Deep-Level Transient Fourier Spectroscopy (CC-DLTFS) measurement on GaN MIS-diode structure. Although this trap level is quite shallow, it can still lead to current collapse in LPCVD-SiNx-passivated AlGaN/GaN HEMTs due to the small On.

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Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers

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Chinese Physics Letters 2016年第10期33卷 128-131页

作者：刘毅于涛朱正勇钟汇才朱开贵 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Integrated Circuit Advanced Process Center Institute of MicroelectronicsChinese Academy of Sciences Key Laboratory of Micro-nano Measurement-Manipulation and Physics(Ministry of Education) Beihang University

The dependence of perpendicular magnetic anisotropy （PMA） on the barrier layer MgO thickness in MgO/CoFeB /Ta multilayers is investigated. The results show that the strongest PMA occurs in a small window of about 2 4nm with the increase of MgO thickness from 1-1Onto. The crystalline degree of MgO and the change of interatomic distance along the out-of-plane direction may be the main reasons for the change of PMA in these multilayers. Moreover, the roughnesses of 2- and 4-nm-thick MgO samples are 3.163 and 1.8 nm, respectively, and both the samples show PMA. These results could be used to tune the magnetic characteristic of the ultra thin CoFeB film for future applications in perpendicular magnetic devices.

关键词： PMA MgO of Effects of MgO Thickness and Roughness on Perpendicular Magnetic Anisotropy in MgO/CoFeB/Ta Multilayers in nm Ta on

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Effect of Mo capping layers thickness on the perpendicular magnetic anisotropy in MgO/CoFeB based top magnetic tunnel junction structure

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Chinese Physics B 2016年第11期25卷 558-562页

作者：刘毅朱开贵钟汇才朱正勇于涛马苏德 School of Physics and Nuclear Energy Engineering Beihang University Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education Beihang University Integrated Circuit Advanced Process Center Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A detailed study of the magnetic characterizations of the top structure MgO/CoFeB/Mo is *** samples show strong perpendicular magnetic anisotropy（PMA） when the thickness of CoFeB is 0.9 nm and 1.1 *** saturation magnetic moment and interface anisotropy constant are 1566 emu/cm3 and 3.75 erg/cm2,*** magnetic dead layer（MDL） is about 0.23 nm in this ***,strong capping layer thickness dependence is also *** strong PMA of 1.1 nm CoFeB only exists in a Mo cap layer thickness window of 1.2-2 *** maintain PMA,the metal layer could not be too thin or thick in these *** oxidation and diffusion of the metal capping layer should be respectively responsibility for the degradation of PMA in these thin or thick metal capping layer samples.

关键词： anisotropy perpendicular junction annealing annealed thick saturation multilayer responsibility boron

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Analytical current model of tunneling field-effect transistor considering the impacts of both gate and drain voltages on tunneling

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Science China(Information Sciences) 2015年第2期58卷 174-181页

作者： WANG Chao WU ChunLei WANG JiaXin HUANG QianQian HUANG Ru Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

In this paper, a closed-form current model for bulk tunneling field-effect transistor(TFET) is put forward. Based on the operation mechanism, the channel surface potential φsf which involves the impact of both the gate and the drain voltages is established for the first time. In addition, a new calculation method for the dynamic tunneling width, which is the critical parameter for the TFET modeling, is derived from the surface potential. The surface-potential-based current model is established which is in a good agreement with TCAD simulation results.

关键词： tunneling field-effect transistor current model surface potential drain voltage tunneling width

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Highly improved resistive switching performances of the self-doped Pt/HfO_2:Cu/Cu devices by atomic layer deposition

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Science China(Physics,Mechanics & Astronomy) 2016年第12期59卷 72-77页

作者： Sen Liu Wei Wang QingJiang Li XiaoLong Zhao Nan Li Hui Xu Qi Liu Ming Liu College of Electronic Science and Engineering National University of Defense Technology Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University

Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile *** this memory suffers from large dispersion of resistive switching parameters due to the intrinsic randomness of the conductive filament. In this work, we have proposed a self-doping approach to improve the resistive switching characteristics. The fabricated Pt/HfO_2:Cu/Cu device shows outstanding nonvolatile memory properties, including high uniformity, good endurance, long retention and fast switching speed. The results demonstrate that the self-doping approach is an effective method to improve the metal-oxide ECM memory performances and the self-doped Pt/HfO_2:Cu/Cu device has high potentiality for the nonvolatile memory applications in the future.

关键词： resistive switching nonvolatile memory ECM Cu dopant

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Effect of annealing on the characteristics of Ti/Al Ohmic contacts to p-type 4H-SiC 11th

Effect of annealing on the characteristics of Ti/Al Ohmic co...

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11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

作者： Tang, Yi-Dan Shen, Hua-Jun Zhang, Xu-Fang Guo, Fei Bai, Yun Peng, Zhao-Yang Liu, Xin-Yu High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China School of Physical Science and Technology Lanzhou University Lanzhou China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of china Chengdu China

ISBN: (纸本)9783035710434

Ti/Al contacts deposited on p-type epilayer doped with Al at 2×1019 cm-3 are reported. The current-voltage curves of Ti/Al contacts annealed at different temperatures from 800 to 1000 °C were measured, which provided the specific contact resistances (SCRs) of 6.59×10-5 Ω/cm2 and 7.81×10-5Ω/cm2 after annealing at 900°C for 5min and 950°C for 2min, respectively. The microstructures of Ti/Al contact on P-type 4H–SiC were investigated by X-ray diffraction (XRD). The results of XRD show that the phases of Ti3SiC2 was formed at the metal/SiC interface after annealing, which could be effective to ohmic contacts on P-type 4H–SiC. The quantitative phase analysis were also discussed, which show that the phase composition of Ti3SiC2 is key factor for low resistance to P-type 4H–SiC. Moreover, simulations proved that the gradual Ti3SiC2 ISL reduces or eliminates the effective barrier height at the metal/Ti3SiC2/p-type and may also contribute to low contact resistivity. © 2017 Trans Tech Publications, Switzerland.

关键词： X ray diffraction

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Fabrication of spiral zone plate using hybrid electron beam and x-ray lithography

Fabrication of spiral zone plate using hybrid electron beam ...

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Specialty Optical Fibers, SOF 2016

作者： Gao, Nan Zhu, Xiaoli Li, Hailiang Hua, Yilei Shi, Lina Xie, Changqing Key Laboratory of Microelectronic Devices and oIntegrated Technology Institute of Microelectronics of Chinese Academy of Sciences China China

We report the fabrication of x-ray spiral zone plates (SZPs). Gold patterns were first fabricated on suspended membrane employing electron beam lithography, and then used as a mask to obtain the SZPs by x-ray lithogra... 详细信息

ISBN: (纸本)9781943580149

关键词： Fabrication

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