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Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range

Chinese Journal of Electronics 2025年第1期26卷 137-145页

作者： Yuhao Wang Sen Huang Qimeng Jiang Xinhua Wang Jie Fan Haibo Yin Ke Wei Yingkui Zheng Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences

“Ohmic-before-passivation” process was implemented on ultrathin-barrier AlGaN（<6 nm）/GaN heterostructure to further reduce the ohmic contact resistance（Rc）. In this process, alloyed Ti/Al/Ni/Au ohmic metal was formed first, followed by AlN/SiNxpassivation contributed to restore two-dimensional electron gas（2DEG） in the access region. Due to the sharp change in the concentration of 2DEG at the metal edge, a reduced transfer length consisted with lower Rcare achieved compared to that of ohmic contact on AlGaN（～20 nm）/GaN heterostructure with pre-ohmic recess process. Temperature-dependent current voltage measurements demonstrate that the carrier transport mechanism is dominated by thermionic field emission above 200 K and by field emission below 200 K. The “ohmic-before-passivation” process enables the relative stability of ohmic contacts between 50 K and 475 K and significantly improves the direct current characteristics of GaN-metal-insulator-semiconductor-high electron mobility transistor, offering a promising means for scaling down and enabling the utilization of low-voltage GaN-based power devices in extreme environmental conditions.

关键词： optimal CDG framework telecommunication network routing energy efficient WSN CS compressed sensing diffusion wavelet transform matrix optimal compressed data gathering framework wireless sensor network Measurement matrix telecommunication power management measurement matrix optimization algorithm compressed data measurement sparse representation optimal data aggregation tree algorithm energy consumption trees (mathematics) Compressed sensing (CS) signal representation Wireless sensor networks (WSNs) ODAT algorithm data transmission reduction wavelet transforms wireless sensor networks Optimal data aggregation tree (ODAT) MMOA energy consumption minimization routing technology energy conservation DWTM

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An AND-type 1T-FeFET array with robust write and read operations

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Science China(Information Sciences) 2025年第2期68卷 395-396页

作者： Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].

关键词： Ferroelectric devices

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Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications

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Science China(Information Sciences) 2023年第6期66卷 313-314页

作者： Zhongxin LIANG Yang ZHAO Kaifeng WANG Jieyin ZHANG Jianjun ZHANG Ming LI Ru HUANG Qianqian HUANG Key Laboratory of Microelectronics Devices and Circuits (MOE) School of Integrated CircuitsPeking University Key Laboratory of Nanophysics and Devices Institute of PhysicsChinese Academy of Sciences Beijing Advanced Innovation Center for Integrated Circuits

Silicon-based tunneling field effect transistor(TFET) with a band-to-band tunneling mechanism has been widely studied due to its ultra-steep subthreshold swing(SS),ultralow leakage current(Ioff),and good complementary...

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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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Science China(Information Sciences) 2024年第10期67卷 100-114页

作者： Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology

Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive skills. As a promising hardware solution for edge MoE implementations, the computing-in-memory(CIM) architecture collocates memory and computing within a single device, significantly reducing the data movement and the associated energy consumption. However, due to diverse edge application scenarios and constraints, determining the optimal network structures for MoE, such as the expert's location,quantity, and dimension on CIM systems remains elusive. To this end, we introduce a software-hardware co-designed neural architecture search(NAS) framework, CIM-based MoE NAS(CMN), focusing on identifying a high-performing MoE structure under specific hardware constraints. The results of the NYUD-v2 dataset segmentation on the RRAM(SRAM) CIM system reveal that CMN can discover optimized MoE configurations under energy, latency, and performance constraints, achieving 29.67×(43.10×) energy savings,175.44×(109.89×) speedup, and 12.24× smaller model size compared to the baseline MoE-enabled Visual Transformer, respectively. This co-design opens up an avenue toward high-performance MoE deployments in edge CIM systems.

关键词： mixture-of-experts computing-in-memory neural architecture search resistive random-access memory static random-access memory

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Design memristor-based computing-in-memory for AI accelerators considering the interplay between devices, circuits, and system

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Science China(Information Sciences) 2023年第8期66卷 243-253页

作者： Junjie AN Linfang WANG Wang YE Weizeng LI Hanghang GAO Zhi LI Zhidao ZHOU Jinghui TIAN Jianfeng GAO Chunmeng DOU Qi LIU School of Microelectronics University of Science and Technology of China State key Lab of Fabrication Technologies for Integrated Circuits Institute of MicroelectronicsChinese Academy of Sciences School of Microelectronics University of Chinese Academy of Sciences Frontier Institute of Chip and System State Key Laboratory of ASIC and System Fudan University

Recent advances in developing beyond von Neumann architectures have moved the memristive devices to the forefront as one of the key enablers to realizing memristive computing-in-memory(m CIM)structures, which shows a great promise to boost the energy-efficiency and the performance of artificial intelligence(AI) chips. In this study, by considering the interactions between devices, circuits, and systems in the m CIM design, we propose several cross-layer design techniques, including(1) the BL-SL interactive forming protection(BSIFP) circuit that can reduce the voltage drop on the selected transistor, suppress the current overshoot by 65.96%, and improve the bit-cell density by more than 10.19%,(2) the clamping transistor trimming scheme(CTTS) to prevent the multiply-and-accumulate(MAC) signal margin degradation from chip-to-chip resistance variations, and(3) dynamic input-parallelism and output-precision(DIPOP) that can reduce the energy cost by 22.92% in a typical inference task with negligible accuracy loss. The results demonstrate the significant role of the cross-layer-interactive approach and provide a preliminary guideline for highly-efficient m CIM design.

关键词： memristor resistive memory computing-in-memory artificial intelligence cross-layer co-design

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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET

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Science China(Information Sciences) 2022年第6期65卷 241-246页

作者： Mengxuan YANG Qianqian HUANG Kaifeng WANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs(TFETs) and negative capacitance FETs(NCFETs) can break the subthreshold swing limitation(60 mV/dec at room temperature) of conventional metal-oxide-semiconductor field-effect transistor(MOSFET) to reduce the operating voltage and thus power consumption. However, induced by the band-to-band tunneling mechanism, TFETs have a subthreshold swing degradation issue and relatively low ON current. Although NCFETs with ferroelectric/dielectric gate stack can theoretically maintain a high ON current comparable to conventional MOSFET, the physical origin of sub-60 SS is controversial and the mechanism of switching behavior in NCFET is still not clear. In this work, by experimentally investigating the whole negative differential capacitance process and its gate voltage amplification coefficient, an intrinsic issue of SS degradation with increased gate voltage is also found in NCFET for the first time. Based on the physical investigation and simulation results, it is shown that the intrinsic SS degradation in NCFET is resulting from the instant dielectric polarization response. Both the decrease of dielectric thickness and the increase of dielectric constant may lead to the severer SS degradation, which is not favorable for scaled NCFETs.

关键词： ferroelectric negative differential capacitance effect polarization low power voltage amplification

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On-chip integrated GeSe_(2)/Si vdW heterojunction for ultravioletenhanced broadband photodetection,imaging,and secure optical communication

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Nano Research 2024年第7期17卷 6544-6549页

作者： Zhiman Zhou Kunxuan Liu Di Wu Yunrui Jiang Ranran Zhuo Pei Lin Zhifeng Shi Yongtao Tian Wei Han Longhui Zeng Xinjian Li School of Physics and Microelectronics Key Laboratory of Material Physics Ministry of EducationZhengzhou UniversityZhengzhou 450052China Department of Electrical and Computer Engineering University of California San DiegoLa JollaCalifornia 92093USA Institute of Microelectronics and Integrated Circuits School of MicroelectronicsHubei UniversityWuhan 430062China

Broadband photodetection,spanning from ultraviolet(UV)to infrared(IR),is pivotal in diverse technological domains including astronomy,remote sensing,environmental monitoring,and medical ***,current commercially available broadband photodetectors,predominately based on conventional narrow-bandgap semiconductors,exhibit limited sensitivity in the UV *** limitation,stemming from the significant energy disparity between the semiconductor bandgap and UV photon,narrows their application ***,we report an innovative approach involving the in-situ van der Waals(vdW)integration of two-dimensional(2D)GeSe_(2)layers onto a Si *** process yields a high-quality GeSe_(2)/Si vdW heterojunction device,which features a broad response range covering from UV to near-IR(NIR)with a greatly-enhanced sensitivity in the UV *** device possesses high responsivities of 325 and 533.4 mA/W,large detectivities of 1.24×10^(13)and 2.57×10^(13)Jones,and fast response speeds of 20.6/82.1 and 17.7/81.0μs under 360 and 980 nm,***,the broadband image sensing and secure invisible optical communication capabilities of the GeSe_(2)/Si heterojunction device are *** work provides a viable approach for UV-enhanced broadband photodetection technology,opening up new possibilities and applications across various scientific and technological domains.

关键词： germanium diselenide van der Waals(vdW)integration ultraviolet enhanced broadband photodetection imaging

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A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

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Science China(Information Sciences) 2023年第5期66卷 303-304页

作者： Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China Zhejiang Lab

The emerging non-volatile memories (NVMs), including resistive random access memory (RRAM)[1], phase-change memory (PCM)[2], and ferroelectric random access memory (Fe RAM)[3], have broad application prospects owing to their non-volatility and near-zero static energy consumption. Compared to other NVMs, ferroelectric capacitors(Fe CAPs) ofer advantages in energy consumption and endurance. However, the destructive read operation of capacitors (e.g., DRAMs and Fe CAPs) destroys the stored data.

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors

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Science China(Information Sciences) 2022年第6期65卷 277-278页

作者： Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息

关键词： Ferroelectric Negative differential capacitance effect Polarization Low power Subthreshold swing

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Enhancement of Ferroelectricity in Hf0.5Zr0.5O2 via Pre-Crystallization and Interface Engineering at Ultra-Low Temperature (300°C) Annealing

IEEE Electron Device Letters

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IEEE Electron Device Letters 2025年第6期46卷 928-931页

作者： Tong, keyou Xu, Jing Chen, Bohan Chen, Xu Xu, Binbin Yang, Shuai Wang, Xiaolei Luo, Jun Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China

The interface degradation between ferroelectric film and surrounding layers limits the endurance of hafnia ferroelectric devices significantly. This letter proposes a promising TiN/TZHZT/TiN structure with TiO2/ZrO2bi-interlayers on both sides of a sub-7 nm Hf0.5Zr0.5O2 (HZO). The TZHZT sample underwent ultra-low temperature annealing at 300 ◦C demonstrates exceptional ferroelectric properties, i.e. significant remnant polarization (2Pr = 28.2 µC/cm2), appropriate coercive field (Ec = 1.7 MV/cm), and excellent endurance exceeding 1010 cycles. Achieved results are attributed to the synergistic effects of dual interlayer engineering. Specifically, the ZrO2 interlayer promotes the growth of ferroelectric grains through the formation of seed crystals, leading to larger grain size after annealing. Meanwhile, the TiO2 interlayer enhances tensile stress and oxygen enrichment, thereby improving both 2Pr and endurance. Moreover, the ZrO2 interlayer effectively compensates the deficiency of breakdown strength for TiO2 layer. © 1980-2012 IEEE.

关键词： Ferroelectricity

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