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International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： W. J. Luo X. J. Chen L. Pang T. T. Yuan X. Y. Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

A Ku-band power amplifier is successfully developed with an internal-matched single chip 6mm AlGaN/GaN high electron mobility transistors (HEMTs). LCL network together with microstrip circuits are used to directly match the impedance of the 6mm GaN HEMTs to 50Ohm without using power combiner. Under the pulsed condition (100μs, 10%), the developed GaN HEMTs power amplifier delivers a 22W saturated output power with 7.6dB linear gain and 26.8% maximum power-added efficiency (PAE) with a drain voltage of 32V and at the frequency of 13.7GHz. To our best knowledge, the achieved high performance power amplifier is the state-of-the-art result ever reported for internal-matched 6mm gate width single chip GaN-based hybrid microwave integrated power amplifier at Ku-band.

关键词： Power amplifiers Gallium nitride HEMTs MODFETs Aluminum gallium nitride Power generation Gain

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Investigations of Fermi Level Pinning and dipole formation in Ti N/HfO2/SiO2/Si Stacks

Investigations of Fermi Level Pinning and dipole formation i...

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2012 International Conference on Material Sciences and Manufacturing Technology(ICMSMT 2012)

作者： Jing Zhang Xiaolei Wang Kai Han Wenwu Wang Chao Zhao Dapeng Chen Tianchun Ye Microelectronics Department North China University of Technology Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

Fermi level pinning（FLP） and dipole formation in TiN/HfO/SiO/Si stacks are investigated. The magnitude of FLP at Ti N/HfO interface is estimated to be V based on dipole theory using concepts of interfacial gap states and charge neutrality level（CNL）. The dipole amount at HfO/SiO interface is experimentally extracted to be +0.33 V. These results show that dipole formation at HfO/SiO interface is important for tuning flatband voltage of the TiN/HfO/SiO/Si stacks. Possible origin of dipole formation is demonstrated and attributed to be lower CNL of HfO compared with that of SiO/Si stacks.

关键词： Fermi level pinning dipole formation charge neutrality level

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Estimations of Fermi Level Pinning and dipole formation in TiN/HfO2/SiO2/Si Stacks

Estimations of Fermi Level Pinning and dipole formation in T...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Xiaolei Wang Wenwu Wang Jing Zhang Jinjuan Xiang Kai Han Xueli Ma Hong Yang Chao Zhao Dapeng Chen Tianchun Ye Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Microelectronics Department North China University of Technology

Fermi level pinning(FLP)and dipole formation in TiN/HfO2/SiO2/Si stacks are *** magnitude of Fermi level pinning at TiN/HfO2 interface is estimated to be V based on dipole theory using concepts of interfacial gap states and charge neutrality *** dipole amount at HfO2/SiO2 interface is experimentally extracted to be +0.33 *** results show that dipole formation at HfO2/SiO2 interface is important for tuning flatband voltage of the TiN/HfO2/SiO2/Si stacks.

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Diamond-Like Carbon Thin Films with Extremely High Compressive Stress (>8~12GPa) for Advanced CMOS Strain Engineering

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MRS Online Proceedings Library 2012年第1期1427卷 80-85页

作者： Ma, Xiaolong Yin, Huaxiang Fu, Zuozhen Zhang, Haiqiang Zhang, Xu Yan, Jiang Zhao, Chao Chen, Dapeng Ye, Tianchun Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China Key Laboratory of Beam Technology and Material Modification of Ministry of Education Beijing Normal University Beijing China

Diamond-like carbon (DLC) films as a new strain-capping material with compressive stress up to 12GPa for strained silicon technology were fabricated by filtered cathodic vacuum arc (FCVA) deposition system. The films’ compositions and bonding structures were characterized using multi-wavelength Raman spectroscopy. The relationship between intrinsic stress and G peak dispersion of the films’ Raman spectra were discussed. The results showed that the bias voltage applied to substrate during deposition determines films’ sp3 bonding content and intrinsic stress. Process compatibility of the DLC films with standard CMOS technology was confirmed by using WDXRF measurement. Also diffusion behavior of carbon atoms in DLC films with copper and silicon was studied with a Cu(200nm)/DLC(40nm)/silicon multilayer structure annealed at 500℃ in N2 atmosphere for an hour. At last, stress induced on silicon surface by DLC strips was characterized using surface sensitive UV-Raman spectroscopy. The results showed that DLC films with extremely high compressive stress have potential application in future CMOS strain engineering.

关键词： Si stress/strain relationship Raman spectroscopy

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The study on the properties of black multicrystalline silicon solar cell varying with the diffusion temperature

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Energy Procedia 2012年 14卷 505-511页

作者： Sihua Zhong Bangwu Liu Yang Xia Jinhu Liu Jie Liu Zenan Shen Zheng Xu Chaobo Li Institute of Solar Energy in School of Science Beijing Jiaotong University Beijing China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

The black multi-crystalline silicon (mc-Si) has been successfully produced by plasma immersion ion implantation. The microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spectrophotometer, respectively. Results show that the black mc-Si exhibits a hillock structure with a low reflectance. Besides, with decreasing the diffusion temperature, the external quantum efficiency of the black mc-Si solar cell increases below ∼550 nm wavelength due to reduced surface recombination. The optimal conversion effieciency of the black mc-Si solar cell is 15.50% at the diffusion temperature of 825 °C. Furthermore, it is interesting to find that there are something different between black mc-Si and acid etched mc-Si on the impact of diffusion.

关键词： black silicon diffusion temperature multicrystalline silicon solar cell

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GaN-based HEMT devices for power switching applications

GaN-based HEMT devices for power switching applications

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International Workshop on Microwave and Millimeter Wave circuits and System Technology (MMWCST)

作者： M. Z. Peng Y. K. Zheng X. J. Chen X. Y. Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing P R China

GaN-based high electron mobility transistors (HEMTs) have successfully demonstrated unprecedented potential in microwave power electronics applications, featuring both high saturation current and high breakdown voltage. Especially, increasing the gate-drain distance is very beneficial to reduce the off-state leakage current for power switching devices. GaN HEMT devices with the gate-drain distance of 29μm have obtained very low off-state leakage current of 3.8μA at V DS =100V and reverse Schottky-gate leakage current of 2.93μA at V GD = -100V. After SiN x passivation, both leakage currents increase nearly one order of magnitude, which are 19.5μA and 14.34μA respectively. On the one hand, the SiN x dielectric layer decreases surface current leakage and suppresses the virtual-gate effect on the electric-field distribution. On the other hand, it increases the electric-field strength near the gate edge at the drain side, resulting in higher Schottky-gate leakage current. Anyway, GaN HEMT devices show a great potential to achieve breakdown voltage of several hundred volts. Further in combination with field-plate technique, the great reduction of peak electric field at gate edge is advantageous for highvoltage applications.

关键词： HEMTs Logic gates Gallium nitride Passivation Leakage current Electric breakdown Switches

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Antireflection properties and solar cell application of silicon nanoscructures

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Journal of Semiconductors 2011年第8期32卷 55-60页

作者：岳会会贾锐陈晨丁武昌武德起刘新宇 Key Laboratory of Microwave Devices and Integrated Circuits Institute of MicroelectronicsChinese Academy of Sciences

Silicon nanowire arrays（SiNWAs） are fabricated on polished pyramids of textured Si using an aqueous chemical etching *** silicon nanowires themselves or hybrid structures of nanowires and pyramids both show strong anti-reflectance abilities in the wavelength region of 300-1000 nm,and reflectances of 2.52%and less than 8%are achieved,respectively.A 12.45%SiNWAs-textured solar cell（SC） with a short circuit current of 34.82 mA/cm^2 and open circuit voltage（K_（oc）） of 594 mV was fabricated on 125×125 mm^2 Si using a conventional process including metal grid *** is revealed that passivation is essential for hybrid structure textured SCs,and K_（oc） can be enlarged by 28.6%from 420 V to 560 mV after the passivation layer is *** loss mechanism of SiNWA SC was investigated in detail by systematic comparison of the basic parameters and external quantum efficiency（EQE） of samples with different fabrication *** is proved that surface passivation and fabrication of a metal grid are critical for high efficiency SiNWA SC,and the performance of SiNWA SC could be improved when fabricated on a substrate with an initial PN junction.

关键词： antireflection properties silicon nanowires solar cells passivation

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A GaN-Based Metal-Semiconductor-Metal Planar Inter-digitated Varactor

A GaN-Based Metal-Semiconductor-Metal Planar Inter-digitated...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Chun-Yan Jin Jin-Yan Wang Min Fang Jin-Bao Cai Yang Liu Zhen Yang Bo Zhang Wen-Gang Wu Jin-Cheng Zhang Institute of Microelectronics Peking University Key Laboratory of M inistry of Education for Wide Band-Gap Semiconductor Materials and Devices Microelectronics InstituteXidian University

ISBN: (纸本)9781467324748

In this paper,a GaN-based metal-semiconductor-metal planar inter-dig itated varactor is *** quality factor of the inter-digitated varactor with finger width of 0.25μm and space between fingers of 7μm on sapphire is 31.9 at 100M Hz,and the tunable capacitance ranges fro m 0.19pF to *** characteristics of this varactor with different finger's widths and spaces are *** is shown that the maximu m capacitance depends on the total area of fingers and the min imu m capacitance lies on fingers'width and the space between *** either width or space is fixed,the minimu m capacitance decreases with the increase of the other one.

关键词： inter-digitated varactor compatible process GaN

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Binary Tree Structure Random Dynamic Element Matching Technique in Current-Steering DACs

Binary Tree Structure Random Dynamic Element Matching Techni...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Guangliang Guo Yuan Wang Wei Su Song Jia Ganggang Zhang Xing Zhang Key Laboratory of Microelectronics Devices and Circuits（MoB）Institute of Microelectronics Peking University

ISBN: (纸本)9781467324748

A novel Dynamic Element Matching（DEM）method is presented to improve the static and dynamic performance of Nyquist-rate current-steering digital to analog converter（DAC）.Compared to conventional DEM methods,this approach only increases or decreases the number of selected unit current sources randomly when the input code ***,signal dependent distortions can be eliminated efficiently at high sampling frequencies.A 6-bit current-steering DAC model adopting the proposed DEM coding method was built up to verify the performance in *** could reach a better SFDR（56dB）value and a better DNL（0.26LSB） and INL（0.45LSB）value compared with traditional DEM methods.

关键词： traditional method compared

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A 1.25/2.5/3.125Gbps CDR circuit with a phase interpolator for RapidIO application

A 1.25/2.5/3.125Gbps CDR circuit with a phase interpolator f...

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2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology(ICSICT-2012)

作者： Hailing Yang Yuan Wang Song Jia Ganggang Zhang Xing Zhang Key Laboratory of Microelectronics Devices and Circuits（MoE） Institute of MicroelectronicsPeking University

ISBN: (纸本)9781467324748

A phase interpolator（PI）-based clock data recovery（CDR）circuit for RapidIO application is presented,which avoids the coupled interference of *** the integration of a digital control cell,the complex and area consumption has been reduced *** adaptive bandwidth PLL structure is adopted so that it can provide clocks of three frequencies while maintain a good jitter *** a 0.13um CMOS process,the circuit has a jitter of 11.2ps@3.125Gbps with a power consumption of 21.7mW under 1.2V,and the core circuit area is 0.16mm2.

关键词： clock and data recovery phase interpolator current mode logic adaptive bandwidth PLL

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