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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology

作者： Fang, Ran Lu, Wengao Liu, Chang Chen, Zhongjian Ju, Yuan Wang, Guannan Ji, Lijiu Yu, Dunshan Key Laboratory of Microelectronic Devices and Circuit Department of Microelectronics Peking University Beijing 100871 China School of Electrical and Computer Engineering Georgia Institute of Technology Atlanta GA 30332 United States

ISBN: (纸本)9781424457984

A CMOS ASIC has been designed and implemented for readout and control of MEMS vibratory gyroscopes. A low noise design is achieved by using the technique of sinusoidal chopper stabilization with a chopping frequency of 2MHz, which will effectively suppress the low frequency noise. A closed loop control method in driving mode is presented. The Chip is fabricated in a 0.35μm standard CMOS process with an area of 2.5×2.5mm2. The test is performed with a vibratory gyroscope on the condition of closed-loop control, and the measurement result shows a detecting resolution of 6aF in 100Hz bandwidth from a single 5V supply. ©2010 IEEE.

关键词： Timing circuits

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A novel nitrogen-doped SiOx resistive switching memory with low switching voltages

A novel nitrogen-doped SiOx resistive switching memory with ...

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IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Dejin Gao Lijie Zhang Ru Huang Runsheng Wang Dongmei Wu Yongbian Kuang Yu Tang Zhe Yu Albert Z. H. Wang Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China Department of Electrical Engineering University of California Riverside CA USA

In summary, a novel RRAM with the structure of Cu/Si x O y N z /W was first fabricated and its characteristics are thoroughly investigated. The new device exhibited low switching voltages and low reset currents, demonstrating its potential for low-power applications. Repeatable unipolar resistive switching characteristics in terms of high off/on resistance ratio and good retention capability were observed. The switching mechanism of the device was analyzed and can be explained by the formation and rupture of vacancy filaments.

关键词： Copper Resistance Switches Nitrogen Temperature Electrodes Voltage measurement

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Study of process of HSQ in electron beam lithography

Study of process of HSQ in electron beam lithography

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5th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2010

作者： Zhao, Min Chen, Baoqin Xie, Changqing Liu, Ming Nie, Jiebing School of Information and Technology Zhanjiang Normal University Zhanjiang 524048 China Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781424465439

As a kind of inorganic negative-tone resist in electron beam lithography, hydrogen silsesquioxane(HSQ) has a high pattern resolution of about 5 nm, but the poor sensitivity limits its extensive application in the field of micro-fabrication. It's very difficult to fabricate the high aspect-ratio dense resist pattern for HSQ because of backscattering electrons and proximity effect. The methods by optimizing process condition are proposed to improve the contrast of graphic structure of HSQ resist and restrain electron beam proximity effect at the same time. On 450nm thick resist layer, HSQ resist pillar array pattern with 5 aspect-ratio under 50kv voltage and HSQ resist mesh pattern structure with 9 aspect-ratio under 100kv voltage can been achieved with optimization of process condition. ©2010 IEEE.

关键词： Electron beam lithography

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Organic-inorganic hybrid circuit with organic memory and MOSFET

Organic-inorganic hybrid circuit with organic memory and MOS...

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IEEE International Nanoelectronics Conference (INEC)

作者： Xing H. Liu Zhuo Y. Ji De Y. Tu Li W. Shang Ming Liu Chang Q. Xie Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy and Sciences Beijing China Institute of Microelectronics Chinese Academy and Sciences Chaoyang China

ISBN: (纸本)9781424435432;9781424435449

In this paper, the organic-inorganic hybrid circuit is demonstrated with the sandwiched structure of Au/poly(3,4-ethylene-dioxythiophene): polystyrenesulfonate/Au organic memory device and N-type MOSFET for nonvolatile memory application. The MOSFET is fabricated with 0.13-¿m CMOS technology. One transistor and one resistor (1T-1R) structure is fabricated in this hybrid circuit, in which the transistor is used as a select cell to limit the compliance current. The compliance current is determined by the transistor's gate voltage, resulting in the control of electrical resistance of the filamentary conductive paths in the low resistive state. The resistive ratio between the ON- and OFF-state is on the order of 10 3 .

关键词： MOSFET circuits Gold Electrodes Organic light emitting diodes Voltage Nonvolatile memory Resistors OFETs Photovoltaic cells Polymer films

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Design consideration of multi-band RF CMOS filter based on active inductors

Design consideration of multi-band RF CMOS filter based on a...

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Russian-Chinese Symposium on Laser Physics and Laser Technologies (RCSLPLT) and Academic Symposium on Optoelectronics Technology (ASOT)

作者： Gao Zhiqiang Xu Honglin Zhang Zhongzhao Lan Jinbao Microelectronics Center of HIT China Microelectronics Center of HIT USA School of Electronics and Information Engineering Harbin Institute of Technology Harbin China National Key Laboratory of Analog Integrated Circuits Sichuan Institute of Solid-state Circuits Chongqing China

In this paper, topology of gyrator-C active inductors are briefly reviewed. A novel structure of multi-band RF active inductor using transistors is presented. Issues of the active inductor related to stability, Q-enhancement principle, and noise are considered. The design of the multi-band Q-enhancement RF filter with 0.18um CMOS process is achieved based on the active inductors. Simulated results show the filter centered at 2.48GHz with about 84MHz bandwidth (3-dB) is tunable in frequency from about 2.19GHz to 4.14GHz, and it exhibits -6.1dBm input third-order intercept point at 2.48GHz with about 80MHz bandwidth while the DC power consumes only 3.9mW.

关键词： Active inductors Band pass filters Radio frequency Noise Stability analysis Circuit stability

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Low-power CMOS fully-folding ADC with a mixed-averaging distributed T/H circuit

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Journal of Semiconductors 2009年第12期30卷 128-132页

作者：刘振贾嵩王源吉利久张兴 Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

This paper describes an 8-bit 125 MHz low-power CMOS fully-folding analog-to-digital converter （ADC） A novel mixed-averaging distributed T/H circuit is proposed to improve the accuracy. Folding circuits are not only used in the fine converter but also in the coarse one and in the bit synchronization block to reduce the number of comparators for low power. This ADC is implemented in 0.5μm CMOS technology and occupies a die area of 2 × 1.5 mm^2. The measured differential nonlinearity and integral nonlinearity are 0.6 LSB/-0.8 LSB and 0.9 LSB/-1.2 LSB, respectively. The ADC exhibits 44.3 dB of signal-to-noise plus distortion ratio and 53.5 dB of spurious-free dynamic range for 1 MHz input sine-wave. The power dissipation is 138 mW at a sampling rate of 125 MHz at a 5 V supply.

关键词： analog-to-digital converter low power fully-folding mixed-averaging distributed T/H circuit bit synchronization

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Novel mixed-voltage I/O buffer with thin-oxide CMOS transistors

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Journal of Semiconductors 2009年第7期30卷 83-85页

作者：俞波王源贾嵩张钢刚 Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University

This paper presents a novel mixed-voltage I/O buffer without an extra dual-oxide CMOS *** mixed-voltage I/O buffer with a simplified circuit scheme can overcome the problems of leakage current and gateoxide reliability that the conventional CMOS I/O buffer *** design is realized in a 0.13-μm CMOS process and the simulation results show a good performance increased by ～34% with respect to the product of power consumption and speed.

关键词： mixed-voltage I/O buffer multi-power domain thin-oxide CMOS

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Comparison between PPy and PPy/TiO2 as saw sensitive films

Comparison between PPy and PPy/TiO2 as saw sensitive films

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IET International Conference on Wireless Sensor Network 2010 (IET-WSN 2010)

作者： X.F. Yan C. Hou W. Zhou X. Wang T.C. Ye D.M. Li M. Liu Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy and Sciences Beijing China

We present for the first time, to the best of authors' knowledge, a comparison investigation between the performance of polypyrrole (PPy) and PPy/TiO 2 as surface acoustic wave (SAW) sensitive films employed in situ polymerization and self-assembly method onto ST-X cut quartz substrates for testing TiO 2 dynamically at room temperature. Both sensitive films are characterized with scanning electron microscopy (SEM) and Fourier transform infrared spectroscopic (FT-IR) techniques. The performance of the device is analyzed in terms of frequency shift, which is real time collected by Universal Counter, as a function of the gas concentrations. For the sensitivity of both films, approximately negative frequency shifts of 30 Hz are measured for PPy to 15 ppm of NO 2 but the nearly same amount of positive frequency shifts for PPy/ TiO 2 to lOppm of NO 2 . And for the selectivity of both films, about negative 90 Hz and 50 Hz frequency shifts for PPy, but positive 110 Hz and 5 Hz frequency shifts for PPy/TiO 2 are observed towards 100 ppm of NO 2 and 100 ppm of H 2 S, respectively.

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Self-assembly of low dimensional organic nanomaterials based on Ni(TCNQ)2(H2O)2

Self-assembly of low dimensional organic nanomaterials based...

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IEEE International Nanoelectronics Conference (INEC)

作者： Zhuoyu Ji Ming Liu Liwei Shang Xinghua Liu Hong Wang Yingping Chen Maixing Han Key Laboratory of Nano Fabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy and Sciences Beijing China

Low dimensional molecular crystals of Ni[TCNQ] 2 (H 2 O) 2 was controlled synthesized by water in large area. Based on the accurate control of the reaction, the nanorods assembled in bundle clusters The nanorods have... 详细信息

关键词： Self-assembly Nanomaterials Magnetic materials Conducting materials Organic materials Inorganic materials Optical materials Magnetic properties Solids Nickel

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Tuning the Threshold Voltage of Low Voltage Organic Thin Film Transistor using light illumination

Tuning the Threshold Voltage of Low Voltage Organic Thin Fil...

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2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology(第十届固态和集成电路技术国际会议 ICSICT-2010)

作者： Liwei Shang Ming Liu Zhuoyu Ji Yingpin Chen Hong Wang Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9781424457977

High and random voltages are big challenges for practical applications of organic thin film transistors (OTFTs). Herein, a route to achieve devices with both low operating voltages (Vop) and tunable threshold voltages (Vm) was proposed. The Vop was reduced to be less 3 V without lowering the mobility and the ratio of on/off current using a 30 nm Al2O3 insulator film fabricated by atomic layer deposition technology. And the VTh was tuned from 1.7 V to 3.8 V by using light illumination combined with voltage pulse on gate electrodes. The tuning range is nearly twice of the operating voltage. And the tuning process is highly reversible. Uniform VTH of OTFTs can be obtained without changing process or materials.

关键词： threshold voltage illumination Organic thin-film transistors VOLTAGE tuning Voltage pulses operating voltage Low voltage Vanadium

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