检索结果-内蒙古大学图书馆

The Synthesization of Si Nanocrystals Embedded in HfO2 Matrix by Electron Beam co-Evaporation Technique

ECS Transactions 2009年第1期18卷

作者： Weilong Li Rui Jia Chen Chen Ming Liu Hao F. Li Chen X. Zhu Shibing Long Key Laboratory of Nanofabrication and Novel Devices Integrated Technology Institute of Microelectronics Chinese Academy of Sciences 3 Beitucheng West Road Chaoyang District Beijing Beijing 100029 China Microfabrication and nanotechnology Lab Institute of Microelectronics Chinese Academy of Sciences No.3 BeiTuCheng West Road ChaoYang District Beijing China Beijing Beijing 100029 China Microfabrication and nanotechnology Lab Institute of Microelectronics Chinese Academy of Sciences No.3 BeiTuCheng West Road ChaoYang District Beijing China Beijing He Bei 100029 China Institute of Microelectronics Chinese Academy of Sciences No.3 BeiTuCheng West Road ChaoYang District Beijing China Beijing Beijing 100029 China Institute of Microelectronics Chinese Academy of Sciences

Silicon nanocrystals synthesized by electron beam co-evaporation (EBCE) of Si and HfO2 mixture are studied. HfO2 and Si powder are uniformly mixed together in certain proportion. The mixed Si & HfO2 powder is evaporated by electron beam evaporation technique. Then the SRO thin films are annealed at different temperatures at 2 hours in N2 ambient to synthesize Silicon nanocrystals. For the sample annealed at 1050 ° at 2 hours, silicon nanocrystals with different size between 3 nm to 5 nm, the mean diameter of 4.0 nm, and the density of 3×1012 cm-2 are evidently observed by high resolution transmission electron microscopy (HRTEM). Then the Raman scattering and photoluminescence spectra arising from Silicon nanocrystals are further confirmed the above result. In addition, the samples annealed at 900 ° for 2 hours to 8 hours are carefully studied by Raman spectra. This way of preparing SRO thin films and Si NCs has unique advantage and is controllable and flexible

关键词：

来源：评论

学校读者我要写书评

暂无评论

Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias

Recovery Characteristics of NBTI of pMOSFETs with Oxynitride...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Jiaqi Yang Junyan Pan Lihua Huang Xiaoyan Liu Ruqi Han and Jinfeng Kang L.F.Zhang Z.W.Zhu C.C.Liao H.M.Wu Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Semiconductor Manufacturing International Corporation

In this paper,the recovery characteristics of negative bias temperature instability（NBTI） of pMOSFETs under drain bias were *** is observed that,the drain bias not only worsens the NBTI degradation in high |V| region but also suppresses the recovery ratio of *** time evolutions of recovery show that the drain bias dependent NBTI recovery is mainly related to the fast recovery effect in initial ls. While in long time scale,the recovery obeys power law dependence on time.A physical model based on donor-type interface traps neutralization at the beginning of recovery is proposed to explain the suppressed recovery ratio under drain bias.

关键词： Recovery Characteristics of NBTI of pMOSFETs with Oxynitride Dielectrics Under Drain Bias

来源：评论

学校读者我要写书评

暂无评论

A Low-Voltage Voltage Doubler without Body Effect

A Low-Voltage Voltage Doubler without Body Effect

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Ming Li Li-Wu Yang Jinfeng Kang Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Semiconductor Manufacturing International Corporation

＜正＞A voltage doubler,which avoids body effect and then improves rise time and efficiency even with 1V power supply,is *** art is designed for word line boosting,using 0.18um EEPROM *** only the voltage doubler can work with capacitive load normally,but also it can supply load current and achieve higher *** whole circuit can be implemented on chip and is suitable for low voltage *** addition,theoretical analysis and simulation results have been given.

关键词： [IEEE keyword]EPROM Equations Mathematical model MOSFETs Threshold voltage Transistors Power supplies

来源：评论

学校读者我要写书评

暂无评论

Resistive switching behaviors and mechanism of transition metal oxides-based memory devices

Resistive switching behaviors and mechanism of transition me...

引用

International Conference on Solid-State and Integrated Circuit Technology

作者： J. F. Kang B. Sun B. Gao N. Xu X. Sun L. F. Liu Y. Wang X. Y. Liu R. Q. Han Y.Y. Wang Institute of Microelectronics Ministry of Education Peking University and Key Laboratory of Microelectronic Devices and Circuits Beijing China

ISBN: (纸本)9781424421855

In this paper, the characteristics and mechanism of the transition metal oxide (TMO) based resistive switching memory (RRAM) devices were addressed. The results show that doping in oxide matrix materials, electrode material, and operating mode of the set/reset process may significantly affect the resistive switching behaviors of RRAM devices. Optimizing the dopants and matrix materials, electrode materials, device structure, and operating modes and understanding the related mechanisms are required to achieve the excellent device performance of TMO-based RRAM for the memory application. A unified physical model, based on the electron hopping transport between oxygen vacancies along the conductive filament paths, is used to explain and describe the resistive switching behaviors of the TMO based RRAM devices.

关键词： Voltage Zinc oxide Electrodes Sun microelectronics Doping Conducting materials Tin Temperature Laboratories

来源：评论

学校读者我要写书评

暂无评论

An Acquisition Circuit in Global Positioning System Receivers

An Acquisition Circuit in Global Positioning System Receiver...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Xiaoxin Cui Chungan Peng Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Institute of Beijing Remote Sensing Information

The conventional matched filter structures are investigated in this paper,An acquisition circuit based on the polyphase form matched filter in Global Positioning System(GPS) receiver is *** the cost of less hardware resource,the significant advantage in the speed of synchronization is *** 32×128 polyphase form matched filter,the critical path delay approximately reduces 1/2,the sample frequency would be double.

关键词： An Acquisition Circuit in Global Positioning System Receivers

来源：评论

学校读者我要写书评

暂无评论

3-D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

3-D Simulation of Geometrical Variations Impact on Nanoscale...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Shimeng Yu Yuning Zhao Yuncheng Song Gang Du Jinfeng Kang Ruqi Han Xiaoyan Liu Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Shenzhen Graduate School Peking University

Intra-die fluctuations in the nanoscale CMOS technology emerge inherently to geometrical variations such as line edge roughness(LER) and oxide thickness fluctuations (OTF).A full 3-D statistical simulation is presented to investigate the impact of geometrical variations on the FinFETs *** this work,roughness is introduced by a Fourier analysis of the power spectrum of Gaussian autocorrelation *** influence of different geometrical variation sources is compared and *** results shows that FinFETs performance is most sensitive to the fin LER,which causes a remarkable shift and fluctuations in threshold voltage, drain induced barrier lower effect(DIBL) and leakage current. The impact of gate LER follows that of fin *** simulation also suggests quantum confinement effect accounts for the aggressive fluctuations due to fin LER.

关键词： D Simulation of Geometrical Variations Impact on Nanoscale FinFETs

来源：评论

学校读者我要写书评

暂无评论

Simulation of Charge Trapping Memory with Novel Structures

Simulation of Charge Trapping Memory with Novel Structures

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： X.Y.Liu Y.C.Song Gang Du R.Q Han Z.L.Xia D.Kim K-H Lee Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Samsung Electronics Co.Ltd

＜正＞Ⅰ.Introduction Flash memories are one of the basic building blocks of today’s electronic *** floating gate type of Flash memory is impossible to scale down to beyond 45nm due to the difficulty in scaling the tunnel oxide and the gate coupling ratio[1].Because of the difficulty in maintaining high gate coupling ratio and preventing cross talk between neighboring cells,NAND technology is forecasted to migrate gradually from floating gate devices（FG） to charge trapping memory（CTM）[2]. CTM are not sensitive to tunnel oxide damage since the charge is stored in discrete traps and one weak spot does

关键词：

来源：评论

学校读者我要写书评

暂无评论

A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

A New Method to Evaluate the Total Dose Radiation Effect of ...

引用

2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Hao Tang Yi Wang Jinyan Wang Yijun Zheng Yufeng Jin Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Peking University Shenzhen Graduate School

The total dose radiation effect（TDRE） has been regarded as one of the most harmful factors to degrade MOS *** this paper,a simple new method called avalanche injection of holes is introduced to simulate or displace the radiation experiments to determine the TDRE of MOS *** TDRE, avalanche injection of holes can also provide sufficient holes to flow into the gate oxide layer where a small part of these holes can be trapped in the defects and cause a shift of flat-band voltage(ΔV) of MOS device,we can conclude that the structure which has a greaterΔV would be easier to be affected by TDRE.

关键词： LPCVD A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

来源：评论

学校读者我要写书评

暂无评论

Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Impact of stochastic mismatch on FinFETs SRAM cell induced b...

引用

IEEE Conference on Electron devices and Solid-State circuits

作者： Shimeng Yu Yuning Zhao Gang Du Jinfeng Kang Ruqi Han Xiaoyan Liu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China Shenzhen Graduate School Peking University

3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well as fin line edge roughness (LER). In this work, 20 nm FinFETs SRAMpsilas sensitivity of read and write static noise margin (SNM) to process variation is evaluated. The worst cases of read and write SNM under the influence of process variation are summarized. The results show that FinFETs SRAMpsilas stability is most sensitive to the access transistorpsilas fin-thickness variation. Under the worst cases, increasing the pull-down transistorpsilas fin-number may improve read SNM. The fin LER can cause aggressive fluctuations of the butterfly-curves and impose a big challenge on robust FinFETs SRAM design. Adopting 8T cell instead of 6T cell can alleviate the fin LER effect on read stability.

关键词： Stochastic processes FinFETs Random access memory MOSFETs Stability Fluctuations CMOS technology Stochastic resonance MOS devices Robustness

来源：评论

学校读者我要写书评

暂无评论

Multiplexer design applied to high-speed signal transmission

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

引用

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第6期29卷 1040-1043页

作者： Cao, Hanmei Yang, Yintang Cai, Wei Lu, Tiejun Wang, Zongmin Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China Beijing Microelectronics Institute of Technology Beijing 100076 China

A multiplexer with a low-distortion high-bandwidth analog switch is presented. The gate-to-source voltage of the switch is set by the combined on-voltage of a pMOS and an nMOS, and the difference between its gate-source voltage and the threshold voltage (VGST) is guaranteed to be constant with input variation. Thus, the body effect is nearly canceled. Implemented in a TSMC 0.18 μm CMOS process, results from HSPICE simulation show that the VGST is nearly constant with an input range from 0.3 to 1.7 V, and the -3 dB bandwidth is larger than 10 GHz;the SFDR (spurious free dynamic range) of the output is 67.11 dB with 1 GHz input frequency;the turn-on time is 2.98 ns, and the turn-off time is 1.35 ns, which indicates a break-before-make action of the multiplexer. The proposed structure can be applied to high speed signal transmission.

关键词： Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：