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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： X.Y.Liu Y.C.Song Gang Du R.Q Han Z.L.Xia D.Kim K-H Lee Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Samsung Electronics Co.Ltd

＜正＞Ⅰ.Introduction Flash memories are one of the basic building blocks of today’s electronic *** floating gate type of Flash memory is impossible to scale down to beyond 45nm due to the difficulty in scaling the tunnel oxide and the gate coupling ratio[1].Because of the difficulty in maintaining high gate coupling ratio and preventing cross talk between neighboring cells,NAND technology is forecasted to migrate gradually from floating gate devices（FG） to charge trapping memory（CTM）[2]. CTM are not sensitive to tunnel oxide damage since the charge is stored in discrete traps and one weak spot does

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A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

A New Method to Evaluate the Total Dose Radiation Effect of ...

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2008 9th International Conference on Solid-State and Integrated-Circuit Technology

作者： Hao Tang Yi Wang Jinyan Wang Yijun Zheng Yufeng Jin Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Peking University Shenzhen Graduate School

The total dose radiation effect（TDRE） has been regarded as one of the most harmful factors to degrade MOS *** this paper,a simple new method called avalanche injection of holes is introduced to simulate or displace the radiation experiments to determine the TDRE of MOS *** TDRE, avalanche injection of holes can also provide sufficient holes to flow into the gate oxide layer where a small part of these holes can be trapped in the defects and cause a shift of flat-band voltage(ΔV) of MOS device,we can conclude that the structure which has a greaterΔV would be easier to be affected by TDRE.

关键词： LPCVD A New Method to Evaluate the Total Dose Radiation Effect of MOS devices

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Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation

Impact of stochastic mismatch on FinFETs SRAM cell induced b...

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IEEE Conference on Electron devices and Solid-State circuits

作者： Shimeng Yu Yuning Zhao Gang Du Jinfeng Kang Ruqi Han Xiaoyan Liu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China Shenzhen Graduate School Peking University

3-D mixed-mode device-circuit simulation is presented to investigate stochastic mismatch of FinFETs SRAM cell induced by process variation including fin-thickness and gate length variation as well as fin line edge roughness (LER). In this work, 20 nm FinFETs SRAMpsilas sensitivity of read and write static noise margin (SNM) to process variation is evaluated. The worst cases of read and write SNM under the influence of process variation are summarized. The results show that FinFETs SRAMpsilas stability is most sensitive to the access transistorpsilas fin-thickness variation. Under the worst cases, increasing the pull-down transistorpsilas fin-number may improve read SNM. The fin LER can cause aggressive fluctuations of the butterfly-curves and impose a big challenge on robust FinFETs SRAM design. Adopting 8T cell instead of 6T cell can alleviate the fin LER effect on read stability.

关键词： Stochastic processes FinFETs Random access memory MOSFETs Stability Fluctuations CMOS technology Stochastic resonance MOS devices Robustness

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Multiplexer design applied to high-speed signal transmission

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第6期29卷 1040-1043页

作者： Cao, Hanmei Yang, Yintang Cai, Wei Lu, Tiejun Wang, Zongmin Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China Beijing Microelectronics Institute of Technology Beijing 100076 China

A multiplexer with a low-distortion high-bandwidth analog switch is presented. The gate-to-source voltage of the switch is set by the combined on-voltage of a pMOS and an nMOS, and the difference between its gate-source voltage and the threshold voltage (VGST) is guaranteed to be constant with input variation. Thus, the body effect is nearly canceled. Implemented in a TSMC 0.18 μm CMOS process, results from HSPICE simulation show that the VGST is nearly constant with an input range from 0.3 to 1.7 V, and the -3 dB bandwidth is larger than 10 GHz;the SFDR (spurious free dynamic range) of the output is 67.11 dB with 1 GHz input frequency;the turn-on time is 2.98 ns, and the turn-off time is 1.35 ns, which indicates a break-before-make action of the multiplexer. The proposed structure can be applied to high speed signal transmission.

关键词： Threshold voltage

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A PWM/pseudo-PFM auto-mode-applied buck DC/DC switching regulator

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第10期29卷 1956-1962页

作者： Liu, Lianxi Yang, Yintang Zhu, Zhangming Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices Institute of Microelectronics Xidian University Xi'an 710071 China

A buck DC/DC switching regulator is implemented by automatically altering the modulation mode according to the load current that ranges from 0.01 to 3A. The pseudo-PFM mode is applied when duty cycle is less than 20%, and the PWM mode is selected in a range of duty cycle from 20% to 100%. The average conversion efficiency of the regulator is about 90% when the output current varies. The proposed dual-mode-control die is implemented in a 0.5m DPDM CMOS mixed-signal process and a power p-MOSFET is used in the chip by hybrid integration.

关键词： Pulse width modulation

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Organic field effect transistors having hundreds of nanometers long channels

Organic field effect transistors having hundreds of nanomete...

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2008 MRS Spring Meeting

作者： Liwei, Shang Ming, Liu Deyu, Tu Lijuan, Zhen Ge, Liu Xinghua, Liu Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences No.3 West road of Beitucheng Chaoyang Disctrict Beijing 100029 China

ISBN: (纸本)9781605608440

This work studied systemically the device characteristics when the OFETs' channels turn into hundreds of nm. Standard planar OFETs have been fabricated using electronic beam lithography. Copper phthalocyanine is used as the semiconductor materials. When reduce the L to about 300 nm will lead an abrupt degradation of device performance. The ratio of Ion/Ioff turns from several hundreds into couple of tens. And when change the L to about 100 nm, the mobility turns from 10-2 cm2/Vs into 10 -5 cm2/Vs, and the threshold voltage turns from about 12 V into 36 V. These abrupt changes are due to the changes of interface between active layer and insulator layer caused by the reducing the L to close to the grain size. © 2008 Materials Research Society.

关键词： Organic field effect transistors

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Theoretical study of low-energy electron penetration in resist-substrate target by Monte Carlo simulation

Theoretical study of low-energy electron penetration in resi...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Liming Ren Baoqin Chen Ru Huang Xing Zhang Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China Chinese Academy and Sciences Beijing China

ISBN: (纸本)9781424421855

Low-energy electron beam lithography has a variety of advantages. The traditional electron scattering model consisting of Rutherford elastic scattering cross section and Bethe continuous slowing down approximation formula are not suitable for low-energy electron beam lithography. A more accurate physical model describing the low-energy electron scattering processes was proposed in this work. And Monte Carlo method was used to simulate the complex scattering processes of Gaussian-distribution low-energy electron beam in the target of thin film on thick substrate. The simulation results show that low-energy electron beam lithography has advantages of high throughput, low proximity effects and small damage to the underlying substrate. It is in agreement with the conclusion got from Lee et al¿s and Peterson et al¿s experiments.

关键词： Particle scattering Electron beams Lithography Substrates microelectronics Gaussian processes Throughput Proximity effect Energy resolution Polynomials

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New method to evaluate the total dose radiation effect of MOS devices

New method to evaluate the total dose radiation effect of MO...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Hao Tang Yi Wang Jinyan Wang Yijun Zheng Yufeng Jin Peking University Beijing Beijing CN Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China

ISBN: (纸本)9781424421855

The total dose radiation effect (TDRE) has been regarded as one of the most harmful factors to degrade MOS devices. In this paper, a simple new method called avalanche injection of holes is introduced to simulate or displace the radiation experiments to determine the TDRE of MOS devices. Like TDRE, avalanche injection of holes can also provide sufficient holes to flow into the gate oxide layer where a small part of these holes can be trapped in the defects and cause a shift of flat-band voltage (¿V FB ) of MOS device, we can conclude that the structure which has a greater ¿V FB would be easier to be affected by TDRE.

关键词： Radiation effects MOS devices Voltage microelectronics Electron traps Electrodes Frequency Laboratories circuits Degradation

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A low-voltage voltage doubler without body effect

A low-voltage voltage doubler without body effect

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International Conference on Solid-State and Integrated Circuit Technology

作者： Ming Li Li-Wu Yang Jinfeng Kang Yangyuan Wang Semiconductor Manufacturing International Corporation Shanghai China Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University China

ISBN: (纸本)9781424421855

A voltage doubler, which avoids body effect and then improves rise time and efficiency even with 1 V power supply, is presented. This art is designed for word line boosting, using 0.18 um EEPROM technology. Not only the voltage doubler can work with capacitive load normally, but also it can supply load current and achieve higher efficiency. The whole circuit can be implemented on chip and is suitable for low voltage application. In addition, theoretical analysis and simulation results have been given.

关键词： Power supplies MOSFETs Threshold voltage Boosting EPROM Low voltage Charge pumps microelectronics Circuit simulation Switches

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Air-bridge inter-connection method for microwave and high temperature devices

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

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Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors 2008年第2期29卷 352-355页

作者： Lin, Ruobing Wei, Wei Feng, Qian Wang, Chong Hao, Yue Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices Microelectronics Institute Xidian University Xi'an 710071 China

A flexible air-bridge method is proposed that is useful for high temperature microwave devices. This method makes use of different resists to give several resists as a sacrificial layer. After low temperature baking, a perfect arch sacrificial layer of bridges with a ratio higher than 60% is obtained. An air-bridge inter-connection structure with excellent characteristics and high reliability can be easily fabricated with this method.

关键词： Monolithic microwave integrated circuits

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