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Physical mechanism of oxygen diffusion in the formation of Ga_(2)O_(3) Ohmic contacts

Chinese Physics B 2024年第1期33卷 653-659页

作者：徐宿雨于淼袁东阳彭博元磊张玉明贾仁需 Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian UniversityXi'an 710071China The 13 th Research Institute China Electronics Technology Group Corporation Shijiazhuang 050051China

The formation of low-resistance Ohmic contacts in Ga_(2)O_(3) is crucial for high-performance electronic devices. Conventionally, a titanium/gold(Ti/Au) electrode is rapidly annealed to achieve Ohmic contacts, resulting in mutual diffusion of atoms at the interface. However, the specific role of diffusing elements in Ohmic contact formation remains *** this work, we investigate the contribution of oxygen atom diffusion to the formation of Ohmic contacts in Ga_(2)O_(3). We prepare a Ti/Au electrode on a single crystal substrate and conduct a series of electrical and structural *** density functional theory, we construct a model of the interface and calculate the charge density, partial density of states, planar electrostatic potential energy, and I–V characteristics. Our results demonstrate that the oxygen atom diffusion effectively reduces the interface barrier, leading to low-resistance Ohmic contacts in Ga_(2)O_(3). These findings provide valuable insights into the underlying mechanisms of Ohmic contact formation and highlight the importance of considering the oxygen atom diffusion in the design of Ga_(2)O_(3)-based electronic devices.

关键词： Ga_(2)O_(3) Ohmic contacts oxygen diffusion density functional theory

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On the Performance of Destructive Bond Strength Tests in Wedge Welding Stability 10th

On the Performance of Destructive Bond Strength Tests in Wed...

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10th International Conference on Mechanical, Automotive and Materials Engineering, CMAME 2023

作者： Zhou, Jingnan Wang, Ke Li, Jing Gao, Jiantou Sun, Peng Cai, Xiaowu Zhao, Fazhan Han, Zhengsheng Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9789819748051

Bond strength tests are the most widely accepted methods for controlling the quality of the wire bonding operation, and thereby offering added assurance that semiconductor devices will not fail in the field due to weak wire bonds. In this paper, three destructive bond strength tests are investigated in Au/Al and Al/Al bonding interface. Experiments demonstrate that wire bond shear test and wire pull test (single bond) can reflect the bonding state of the Au/Al interface more accurately than wire pull test (double bond). To obtain the most reliable data, combining wire bond shear test and its wedge bond lift offs records would be the best choice for Au/Al interface stability. © The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.

关键词： Semiconductor devices

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Low Stress TSV Arrays for High-Density Interconnection

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Engineering 2024年第7期38卷 201-208页

作者： Binbin Jiao Jingping Qiao Shiqi Jia Ruiwen Liu Xueyong Wei Shichang Yun Yanmei Kong Yuxin Ye Xiangbin Du Lihang Yu Bo Cong Institute of Microelectronics Chinese Academy of SciencesBeijing 100000China School of Integrated Circuits University of Chinese Academy of SciencesBeijing 100000China State Key Laboratory for Manufacturing Systems Engineering Xi’an Jiaotong UniversityXi’an 710049China

In three-dimensional(3D)stacking,the thermal stress of through-silicon via(TSV)has a significant influence on chip performance and reliability,and this problem is exacerbated in high-density TSV *** this study,a novel hollow tungsten TSV(W-TSV)is presented and *** hollow structure provides space for the release of thermal *** results showed that the hollow W-TSV structure can release 60.3%of thermal stress within the top 2 lm from the surface,and thermal stress can be decreased to less than 20 MPa in the radial area of 3 *** ultra-high-density(1600 TSV∙mm2)TSV array with a size of 640×512,a pitch of 25 lm,and an aspect ratio of 20.3 was fabricated,and the test results demonstrated that the proposed TSV has excellent electrical and reliability *** average resistance of the TSV was 1.21 *** leakage current was 643 pA and the breakdown voltage was greater than 100 *** resistance change is less than 2%after 100 temperature cycles from40 to 125℃.Raman spectroscopy showed that the maximum stress on the wafer surface caused by the hollow W-TSV was 31.02 MPa,which means that there was no keep-out zone(KOZ)caused by the TSV *** results indicate that this structure has great potential for applications in large-array photodetectors and 3D integrated circuits.

关键词： Thermal stress Through-silicon via(TSV)High-density integration

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Theoretical Model, Experimental Survey, and Optimization of Pulse Parameters for 4H-SiC Drift Step Recovery Diode

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IEEE Transactions on Plasma Science 2025年第4期53卷 721-728页

作者： Guo, Dengyao Tang, Xiaoyan Guo, Jingkai Zhou, Yu Sun, Lejia Zhang, Yu Zhang, Yuming Song, Qingwen Xidian University Key Laboratory of Wide Bandgap Semiconductor Materials and Devices School of Microelectronics Xi’an710071 China Xidian University Xidian-Wuhu Research Institute Wuhu241002 China

The drift step recovery diode (DSRD) is one of the most popular superfast pulse power switches. The pulse parameter model of DSRD is important to improve the characteristics of the pulsed power system and reduce the complexity of the DSRD design. This article presents models for the prepulse amplitude, pulse front durations, and pulse peak based on the operating mechanism of 4H-SiC DSRD. The models establish the connection between the output pulse parameters with the DSRD structure and the material parameters. 4H-SiC DSRDs with different structures are designed for experiments, and the experimental results are consistent with the model predictions. Using the quantitative description of the pulse parameters from the proposed models, the optimization methodology is discussed to reduce the pulse front durations under the prepulse amplitude and peak pulse fixed. The accuracy of this optimization method is confirmed through simulations. The models developed in this article simplify the complex problem of nonlinear interactions involved in 4H-SiC DSRD optimization, enabling better utilization of 4H-SiC DSRD’s advantages in pulsed power systems. © 1973-2012 IEEE.

关键词： Plasma guns

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Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors

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Rare Metals 2024年第12期43卷 6516-6524页

作者： Guan-Qiao Sang Ren-Jie Jiang Yan-Zhao Wei Qing-Kun Li Mei-He Zhang Jia-Xin Yao Yi-Hong Lu Lei Cao Jun-Feng Li Xu-Lei Qin Qing-Zhu Zhang Hua-Xiang Yin Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing100029China School of Physics Changchun University of Science and TechnologyChangchun130013China University of Chinese Academy of Sciences Beijing100049China School of Information and Electronics Beijing Institute of TechnologyBeijing100081China

In order to effectively remove the residual Ge atoms at the surface of channel and improve the interfacial characteristic of gate-all-around(GAA)Si nanosheet field effect transistors,a low-temperature atomic-level trimming approach using ammonia peroxide water mixture(APM)solution treatment followed by diluted hydrofluoric acid is proposed and carried *** capacitor samples with SiGe epitaxy layer,similar thermal budget and channel release process were fabricated using advanced high-k/*** 83%reduction in surface roughness at atomic level is obtained by increasing APM treatment ***,there are 99.45% reduction in the interface state density(D_(it))and 96.8%leakage reduction in current density(J_(g))after APM treatment,indicating a promising method for future GAA NSFET performance optimization.

关键词： Gate-all-around Nanosheet Trimming Ammonia peroxide water mixture Low temperature Interface state density

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A Novel Coprime Nested Array with Enhanced DOFs and Reduced Mutual Coupling for DOA Estimation of Noncircular Sources

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IEEE Transactions on Vehicular Technology 2025年 1-13页

作者： Peng, Zhe Gong, Qishu Xie, Huikai School of Integrated Circuits and Electronics Beijing100081 China BIT Chongqing Institute of Microelectronics and Microsystems Chongqing401332 China Beijing Institute of Control and Electronics Technology Key Laboratory of Information System and Technology Beijing100038 China

Recently, many sparse array configurations have been designed for direction of arrival (DOA) estimation of noncircular sources due to their capability of constructing high-performance difference-sum coarray. Nested array, coprime array, along with their improved structures are the most commonly used array configurations. Nested arrays could provide O(R2) degrees of freedom (DOFs) with only R sensors, but suffer from severe mutual coupling effect owing to closely arranged elements. Coprime arrays generally offer a lower number of DOFs than nested arrays, but are more robust to mutual coupling effect due to sparser array structure. Unfortunately, existing sparse arrays cannot possess the benefits of nested arrays and coprime arrays at the same time within the framework of difference-sum coarray. To compensate for the above shortcoming, we first analyze the nesting property for difference coarray, and generalize the nesting property to difference-sum coarray, allowing nearly half of the sensors to be removed from dense subarray. Then, a new nested configuration called thinned coprime nested array (TCNA) is proposed, whose dense subarray is a coprime structure that satisfies the aforementioned nesting property. TCNA can generate a comparable number of DOFs to nested arrays due to the nesting property between two subarrays. Meanwhile, the mutual coupling effect is greatly reduced since its dense subarray is replaced with a coprime structure, which limits the number of sensor pairs with small spacing. Therefore, TCNA is able to combine the advantages of both nested array and coprime array. Finally, simulations verify the superiority of TCNA with respect to DOF ratio, coupling leakage, and DOA estimation accuracy. © 1967-2012 IEEE.

关键词： Direction of arrival

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Investigation on the passivation,band alignment,gate charge,and mobility degradation of the Ge MOSFET with a GeO/Al;O;gate stack by ozone oxidation

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Journal of Semiconductors 2022年第1期43卷 69-80页

作者： Lixing Zhou Jinjuan Xiang Xiaolei Wang Wenwu Wang Faculty of Information Technology School of MicroelectronicsBeijing University of TechnologyBeijing 100124China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China

Ge has been an alternative channel material for the performance enhancement of complementary metal-oxide-semiconductor(CMOS)technology applications because of its high carrier mobility and superior compatibility with Si CMOS *** gate structure plays a key role on the electrical *** this paper,the property of Ge MOSFET with Al_(2)O_(3)/GeO_(x)/Ge stack by ozone oxidation is *** GeO_(x)passivation mechanism by ozone oxidation and band align-ment of Al2O3/GeO_(x)/Ge stack is *** addition,the charge distribution in the gate stack and remote Coulomb scatter-ing on carrier mobility is also *** surface passivation is mainly attributed to the high oxidation state of *** en-ergy band alignment is well explained by the gap state *** charge distribution is quantitatively characterized and it is found that the gate charges make a great degradation on carrier *** investigations help to provide an impressive un-derstanding and a possible instructive method to improve the performance of Ge devices.

关键词： Ge MOSFET ozone oxidation gate charges mobility

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Resistive switching memory for high density storage and computing

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Chinese Physics B 2021年第5期30卷 26-51页

作者： Xiao-Xin Xu Qing Luo Tian-Cheng Gong Hang-Bing Lv Qi Liu Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China

The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,*** new emerging applications have huge demands on high integration density and low power *** cross-point configuration or passive array,which offers the smallest footprint of cell size and feasible capability of multi-layer stacking,has received broad attention from the research *** such array,correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring *** target requires nonlinear I-V characteristics of the memory cell,which can be realized by either adding separate selector or developing implicit build-in nonlinear *** performance of a passive array largely depends on the cell nonlinearity,reliability,on/off ratio,line resistance,thermal coupling,*** article provides a comprehensive review on the progress achieved concerning 3D RRAM ***,the authors start with a brief overview of the associative problems in passive array and the category of 3D ***,the state of the arts on the development of various selector devices and self-selective cells are *** parameters that influence the device nonlinearity and current density are outlined according to the corresponding working ***,the reliability issues in 3D array are summarized in terms of uniformity,endurance,retention,and ***,scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed,and applications of 3D RRAM beyond storage,such as neuromorphic computing and CMOL circuit are discussed *** and outlooks are given in the final.

关键词： resistive switching memory(RRAM) three-dimensional(3D)integration reliability computing

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Highly sensitive humidity sensors based on hexagonal boron nitride nanosheets for contactless sensing

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Nano Research 2023年第7期16卷 10279-10286页

作者： Hang Liu Jinxu Qin Xigui Yang Chaofan Lv Wentao Huang Fukui Li Chuang Zhang Yanran Wu Lin Dong Chongxin Shan Henan Key Laboratory of Diamond Optoelectronic Materials and Devices Key Laboratory of Materials PhysicsMinistry of EducationSchool of Physics&MicroelectronicsZhengzhou UniversityZhengzhou 450052China Institute of Quantum materials and Physics Henan Academy of SciencesZhengzhou 450046China

Humidity sensors with high sensitivity,rapid response,and facile fabrication process for contactless sensing applications have received considerable attention in recent ***,humidity sensors based on hexagonal boron nitride(h-BN)nanosheets that are synthesized by a facile ultrasonic process have been fabricated,which display an ultrahigh sensitivity of 28,384%at 85%relative humidity(RH),rapid response/recovery time(3.0/5.5 s),and long-term stability in a wide humidity detection range(11%-85%RH),superior to most of the reported humidity *** high sensitivity can be ascribed to the massive hydrophilic functional groups absorbed on the h-BN nanosheet *** from the high humidity sensing performances,contactless Morse code messaging and human writing and speech recognition have been *** work demonstrates the great potential of the high-performance h-BN nanosheet-based humidity sensors for future contactless sensing devices.

关键词： boron nitride humidity sensors contactless detection speech recognition

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Dependence of short channel length on negative/positive bias temperature instability (NBTI/PBTI) for 3D FinFET devices

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Chinese Physics B 2022年第1期31卷 529-534页

作者： Ren-Ren Xu Qing-Zhu Zhang Long-Da Zhou Hong Yang Tian-Yang Gai Hua-Xiang Yin Wen-Wu Wang Integrated Circuit Advanced Process Center(ICAC) Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China

A comprehensive study of the negative and positive bias temperature instability(NBTI/PBTI)of 3D FinFET devices with different small channel lengths is *** is found while with the channel lengths shrinking from 100 nm to 30 nm,both the NBTI characteristics of p-FinFET and PBTI characteristics of n-FinFET turn ***,the channel length dependence on NBTI is more serious than that on *** the analysis of the physical mechanism of BTI and the simulation of 3-D stress in the FinFET device,a physical mechanism of the channel length dependence on NBTI/PBTI is *** extra fluorine passivation in the corner of bulk oxide and stronger channel stress in p-FinFETs with shorter channel length causes less NBTI issue,while the extra nitrogen passivation in the corner of bulk oxide induces less PBTI degradation as the channel length decreasing for *** mechanism well matches the experimental result and provides one helpful guide for the improvement of reliability issues in the advanced FinFET process.

关键词： bias temperature instability(BTI) channel length stress FinFET

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