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10th International Conference on Mechanical, Automotive and Materials Engineering, CMAME 2023

作者： Zhou, Jingnan Wang, Ke Li, Jing Gao, Jiantou Sun, Peng Cai, Xiaowu Zhao, Fazhan Han, Zhengsheng Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9789819748051

Bond strength tests are the most widely accepted methods for controlling the quality of the wire bonding operation, and thereby offering added assurance that semiconductor devices will not fail in the field due to weak wire bonds. In this paper, three destructive bond strength tests are investigated in Au/Al and Al/Al bonding interface. Experiments demonstrate that wire bond shear test and wire pull test (single bond) can reflect the bonding state of the Au/Al interface more accurately than wire pull test (double bond). To obtain the most reliable data, combining wire bond shear test and its wedge bond lift offs records would be the best choice for Au/Al interface stability. © The Author(s), under exclusive license to Springer Nature Singapore Pte Ltd. 2024.

关键词： Semiconductor devices

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Analytical workload dependence of self-heating effect for SOI MOSFETs considering two-stage heating process

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Chinese Physics B 2023年第9期32卷 522-529页

作者：李逸帆倪涛李晓静王娟娟高林春卜建辉李多力蔡小五许立达李雪勤王润坚曾传滨李博赵发展罗家俊韩郑生 Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China University of Chinese Academy of Sciences Beijing 100049China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China

Dynamic self-heating effect(SHE)of silicon-on-insulator(SOI)MOSFET is comprehensively evaluated by ultrafast pulsed I-V measurement in this *** is found for the first time that the SHE complete heating response and cooling response of SOI MOSFETs are conjugated,with two-stage curves *** establish the effective thermal transient response model with stage superposition corresponding to the heating *** systematic study of SHE dependence on workload shows that frequency and duty cycle have more significant effect on SHE in first-stage heating process than in the second *** the first-stage heating process,the peak lattice temperature and current oscillation amplitude decrease by more than 25 K and 4%with frequency increasing to 10 MHz,and when duty cycle is reduced to 25%,the peak lattice temperature drops to 306 K and current oscillation amplitude decreases to 0.77%.Finally,the investigation of two-stage(heating and cooling)process provides a guideline for the unified optimization of dynamic SHE in terms of *** the operating frequency is raised to GHz,the peak temperature depends on duty cycle,and self-heating oscillation is completely suppressed.

关键词： self-heating effect(SHE) silicon-on-insulator(SOI)MOSFETs thermal transient response workload

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Heavy ion energy influence on multiple-cell upsets in small sensitive volumes:from standard to high energies

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Nuclear science and Techniques 2024年第5期35卷 109-121页

作者： Yang Jiao Li-Hua Mo Jin-Hu Yang Yu-Zhu Liu Ya-Nan Yin Liang Wang Qi-Yu Chen Xiao-Yu Yan Shi-Wei Zhao Bo Li You-Mei Sun Pei-Xiong Zhao Jie Liu Institute of Modern Physics Chinese Academy of ScienceLanzhou 730000China University of Chinese Academy of Science Beijing 100049China Spallation Neutron Source Science Center Dongguan 523803China China Electronics Technology Group Corporation No.58 Research Institute Wuxi 214000China Beijing Microelectronics Technology Institute Beijing 100084China Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesBeijing 100029China

The 28 nm process has a high cost-performance ratio and has gradually become the standard for the field of radiation-hardened ***,owing to the minimum physical gate length of only 35 nm,the physical area of a standard 6T SRAM unit is approximately 0.16μm^(2),resulting in a significant enhancement of multi-cell charge-sharing ***-cell upsets(MCUs)have become the primary physical mechanism behind single-event upsets(SEUs)in advanced nanometer node *** range of ionization track effects increases with higher ion energies,and spacecraft in orbit primarily experience SEUs caused by high-energy ***,ground accelerator experiments have mainly obtained low-energy ion irradiation ***,the impact of ion energy on the SEU cross section,charge collection mechanisms,and MCU patterns and quantities in advanced nanometer devices remains *** this study,based on the experimental platform of the Heavy Ion Research Facility in Lanzhou,low-and high-energy heavy-ion beams were used to study the SEUs of 28 nm SRAM *** influence of ion energy on the charge collection processes of small-sensitive-volume devices,MCU patterns,and upset cross sections was obtained,and the applicable range of the inverse cosine law was *** findings of this study are an important guide for the accurate evaluation of SEUs in advanced nanometer devices and for the development of radiation-hardening techniques.

关键词： 28 nm static random access memory(SRAM) Energy effects Heavy ion Multiple-cell upset(MCU) Charge collection Inverse cosine law

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A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

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science China(Information sciences) 2023年第5期66卷 303-304页

作者： Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China Zhejiang Lab

The emerging non-volatile memories (NVMs), including resistive random access memory (RRAM)[1], phase-change memory (PCM)[2], and ferroelectric random access memory (Fe RAM)[3], have broad application prospects owing to their non-volatility and near-zero static energy consumption. Compared to other NVMs, ferroelectric capacitors(Fe CAPs) ofer advantages in energy consumption and endurance. However, the destructive read operation of capacitors (e.g., DRAMs and Fe CAPs) destroys the stored data.

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Evolution of optical properties and molecular structure of PCBM films under proton irradiation

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Chinese Physics B 2022年第5期31卷 582-587页

作者： Guo-Dong Xiong Hui-Ping Zhu Lei Wang Bo Li Fa-Zhan Zhao Zheng-Sheng Han Key Laboratory of Science and Technology on Silicon Devices Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China University of the Chinese Academy of Sciences Beijing 100049China

Low-energy proton irradiation effects on the optical properties and the molecular structure of phenyl-C_(61)-butyric acid methyl ester(PCBM)are studied in this *** PCBM films are irradiated by 100-keV proton beams with fluences of 5×10^(12)p/cm^(2),5×10^(13)p/cm^(2),and 5×10^(14)p/cm^(2),*** photoluminescence(PL)peaks of the post-irradiated PCBM films show a progressive decrease in the peak intensity as the proton fluences increase,which can be attributed to the deep defect levels induced by proton ***,a slight blue-shift in the PL spectrum is also observed at a proton fluence of 5×10^(14)p/cm^(2).The underlying mechanism can be traced back to the lift of the lowest unoccupied molecular orbital(LUMO)level,which is caused by the attachment of methoxy radicals on ortho position of the phenyl ring in the post-irradiated PCBM *** work is of significance in understanding the radiation hardness and the damage mechanism of the PCBM film in radiation environments,which is essential before it is put into practical application in space.

关键词： PCBM proton irradiation effects optical property molecular structure

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Ultra-high-Q photonic crystal nanobeam cavity for etchless lithium niobate on insulator(LNOI)platform

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Opto-Electronic Advances 2025年第1期8卷 59-70页

作者： Zhi Jiang Cizhe Fang Xu Ran Yu Gao Ruiqing Wang Jianguo Wang Danyang Yao Xuetao Gan Yan Liu Yue Hao Genquan Han State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China

The expansive spectral coverage and superior optical properties of lithium niobate(LN)offer a comprehensive suite of tools for exploring novel *** high-quality(Q)photonic resonator cavities is crucial for enhancing light-matter ***,this task is challenging as the device performance is heavily dependent on the fabrication quality of the *** this paper,we present experimental validation of an etchless approach to fabricating high-Q photonic crystal nanobeam cavities(PCNBCs).We successfully fabricate PCNBCs with Q factors exceeding 105 while maintaining high transmittance by capitalizing on the low waveguide loss and high fabrication tolerance of TE-polarized ***,the Q factor achieved here exceeds previous reports on etchless LN PCNBCs by over an order of *** from this advancement,we further explore a variety of optical functions,including thermo-optic tuning,optically induced bistability,and Fano line shapes *** findings present promising prospects for a versatile platform technique,facilitating the development of high-performance electro-optic or acousto-optic modulators,optical logic devices,and quantum photonics,highlighting its significant impact in the field of photonic integration.

关键词： photonic crystal nanobeam cavity LNOI platform high Q thermo-optic tuning bistability Fano line shapes

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Dynamic tuning of terahertz atomic lattice vibration via cross-scale mode coupling to nanomechanical resonance in WSe_(2) membranes

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Microsystems & Nanoengineering 2025年第1期11卷 313-320页

作者： Bo Xu Zejuan Zhang Jiaze Qin Jiaqi Wu Luming Wang Jiankai Zhu Chenyin Jiao Wanli Zhang Juan Xia Zenghui Wang Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Hubei UniversityWuhan 430062China State Key Laboratory of Precision Measuring Technology and Instruments(Tianjin University) Tianjin 300350China School of Integrated Sciences and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

Nanoelectromechanical systems(NEMS)based on atomically-thin tungsten diselenide(WSe_(2)),benefiting from the excellent material properties and the mechanical degree of freedom,offer an ideal platform for studying and exploiting dynamic strain engineering and cross-scale vibration coupling in two-dimensional(2D)***,such opportunity has remained largely unexplored for WSe_(2)NEMS,impeding exploration of exquisite physical processes and realization of novel device ***,we demonstrate dynamic coupling between atomic lattice vibration and nanomechanical resonances in few-layer WSe_(2)*** a custom-built setup capable of simultaneously detecting Raman and motional signals,we accomplish cross-scale mode coupling between the THz crystal phonon and MHz structural vibration,achieving GHz frequency tuning in the atomic lattice modes with a dynamic gauge factor of 61.9,the best among all 2D crystals reported to *** findings show that such 2D NEMS offer great promises for exploring cross-scale physics in atomically-thin semiconductors.

关键词： dynamic strain engineering dynamic tuning nanomechanical resonance cross scale mode coupling nanoelectromechanical systems terahertz atomic lattice vibration exploration exquisite physical processes nanoelectromechanical systems nems based

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SiC trench MOSFET with dual shield gate and optimized JFET layer for improved dynamic performance and safe operating area capability

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Chinese Physics B 2023年第11期32卷 627-634页

作者：张金平陈伟陈子珣张波 State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of ChinaChongqing 401331China

A novel silicon carbide(SiC) trench metal–oxide–semiconductor field-effect transistor(MOSFET) with a dual shield gate(DSG) and optimized junction field-effect transistor(JFET) layer(ODSG-TMOS) is proposed. The combination of the DSG and optimized JFET layer not only significantly improves the device’s dynamic performance but also greatly enhances the safe operating area(SOA). Numerical analysis is carried out with Silvaco TCAD to study the performance of the proposed structure. Simulation results show that comparing with the conventional asymmetric trench MOSFET(Con-ATMOS), the specific on-resistance(Ron,sp) is significantly reduced at almost the same avalanche breakdown voltage(BVav). Moreover, the DSG structure brings about much smaller reverse transfer capacitance(Crss) and input capacitance(Ciss), which helps to reduce the gate–drain charge(Qgd) and gate charge(Qg). Therefore, the high frequency figure of merit(HFFOM) of Ron,sp·Qgdand Ron,sp· Qgfor the proposed ODSG-TMOS are improved by 83.5% and 76.4%, *** switching power loss of the proposed ODSG-TMOS is 77.0% lower than that of the Con-ATMOS. In addition, the SOA of the proposed device is also enhanced. The saturation drain current(Id,sat) at a gate voltage(Vgs) of 15 V for the ODSGTMOS is reduced by 17.2% owing to the JFET effect provided by the lower shield gate(SG) at a large drain voltage. With the reduced Id,sat, the short-circuit withstand time is improved by 87.5% compared with the Con-ATMOS. The large-current turn-off capability is also improved, which is important for the widely used inductive load applications.

关键词： SiC trench MOSFET switching power loss figure of merit safe operating area

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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET

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science China(Information sciences) 2022年第6期65卷 241-246页

作者： Mengxuan YANG Qianqian HUANG Kaifeng WANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs(TFETs) and negative capacitance FETs(NCFETs) can break the subthreshold swing limitation(60 mV/dec at room temperature) of conventional metal-oxide-semiconductor field-effect transistor(MOSFET) to reduce the operating voltage and thus power consumption. However, induced by the band-to-band tunneling mechanism, TFETs have a subthreshold swing degradation issue and relatively low ON current. Although NCFETs with ferroelectric/dielectric gate stack can theoretically maintain a high ON current comparable to conventional MOSFET, the physical origin of sub-60 SS is controversial and the mechanism of switching behavior in NCFET is still not clear. In this work, by experimentally investigating the whole negative differential capacitance process and its gate voltage amplification coefficient, an intrinsic issue of SS degradation with increased gate voltage is also found in NCFET for the first time. Based on the physical investigation and simulation results, it is shown that the intrinsic SS degradation in NCFET is resulting from the instant dielectric polarization response. Both the decrease of dielectric thickness and the increase of dielectric constant may lead to the severer SS degradation, which is not favorable for scaled NCFETs.

关键词： ferroelectric negative differential capacitance effect polarization low power voltage amplification

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Carrier dynamic identification enables wavelength and intensity sensitivity in perovskite photodetectors

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Light(science & Applications) 2024年第11期13卷 2824-2834页

作者： Liangliang Min Yicheng Zhou Haoxuan Sun Linqi Guo Meng Wang Fengren Cao Wei Tian Liang Li School of Physical Science and Technology Jiangsu Key Laboratory of Frontier Material Physics and DevicesCenter for Energy Conversion Materials&Physics(CECMP)Soochow UniversitySuzhouChina College of Physical Science and Technology&Microelectronics Industry Research Institute Yangzhou UniversityYangzhouChina

Deciphering the composite information within a light field through a single photodetector,without optical and mechanical structures,is *** difficulty lies in extracting multi-dimensional optical information from a single dimension of *** photodetectors based on information reconstruction have potential,yet they only extract information contained in the photoresponse current amplitude(responsivity matrix),neglecting the hidden information in response edges driven by carrier ***,by adjusting the thickness of the absorption layer and the interface electric field strength in the perovskite photodiode,we extend the transport and relaxation time of carriers excited by photons of different wavelengths,maximizing the spectrum richness of the edge waveform in the light-dark transition *** the first time,without the need for extra optical and electrical components,the reconstruction of two-dimensional information of light intensity and wavelength has been *** the integration of machine learning algorithms into waveform data analysis,a wide operation spectrum range of 350–750 nm is available with a 100%accuracy *** restoration error has been lowered to less than 0.1%for light *** work offers valuable insights for advancing perovskite applications in areas such as wavelength identification and spectrum imaging.

关键词： intensity spectrum enable

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