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Glass: Topological Engineering of Glass for Modulating Chemical State of Dopants (Adv. Mater. 47/2014)

Advanced Materials 2014年第47期26卷

作者： Shifeng Zhou Qiangbing Guo Hiroyuki Inoue Qun Ye Atsunobu Masuno Binbin Zheng Yongze Yu Jianrong Qiu State Key Laboratory of Luminescent Materials and Devices School of Materials Science and Engineering South China University of Technology Guangzhou 510640 China State Key Laboratory of Silicon Materials School of Materials Science and Engineering Zhejiang University Hangzhou 310027 China Institute of Industrial Science The University of Tokyo 4–6–1 Komaba Meguro‐ku Tokyo 153–8505 Japan

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Contact size scaling of a W-contact phase-change memory cell based on numerical simulation

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Journal of Semiconductors 2012年第10期33卷 53-57页

作者：魏益群林信南贾宇超崔小乐张兴宋志棠 Key Laboratory of Integrated Microsystems Shenzhen Graduate School of Peking University TSRC Key Laboratory of Microelectronic Devices and CircuitsInstitute of MicroelectronicsSchool of Electronics and Computer SciencePeking University State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences

In the design of phase-change memory（PCM）,it is important to perform numerical simulations to predict the performances of different device *** work presents a numerical simulation using a coupled system including Poisson＇s equation,the current continuity equation,the thermal conductivity equation,and phase-change dynamics to simulate the thermal and electric characteristics of phase-change *** method discriminates the common numerical simulation of PCM cells,from which it applies Possion＇s equation and current continuity equations instead of the Laplace equation to depict the electric characteristics of PCM cells,which is more adoptable for the semiconductor characteristics of phase-change *** results show that the simulation agrees with the measurement,and the scalability of PCM is predicted.

关键词： phase-change memory scaling numerical simulation

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A 150%enhancement of PMOSFET mobility using hybrid orientation

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Journal of Semiconductors 2012年第6期33卷 20-23页

作者：唐昭焕谭开洲崔伟张静钟怡徐世六郝跃张鹤鸣胡辉勇张正璠胡刚毅 Science and Technology on Analog Integrated Circuit Laboratory Sichuan Institute of Solid-State Circuits China Electronics Technology Group Corp Key Laboratory of the Ministry of Education for Wide-Band Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University

A high-performance PMOSFET based on silicon material of hybrid orientation is *** orientation wafers,integrated by（100） and（110） crystal orientation,are fabricated using silicon-silicon bonding, chemical mechanical polishing,etching silicon and non-selective expitaxy.A PMOSFET with W/L = 50μm/8μm is also processed,and the measured results show that the drain-source current and peak mobility of the PMOSFET are enhanced by up to 50.7%and 150%at V_（gs） =-15 V and V_（ds） =-0.5 V,*** mobility values are higher than that reported in the literature.

关键词： hybrid orientation non-selective expitaxy carrier mobility （110） crystal orientation PMOSFET chemical mechanical polishing

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Optoelectronic devices: Low‐Temperature Combustion‐Synthesized Nickel Oxide Thin Films as Hole‐Transport Interlayers for Solution‐Processed Optoelectronic devices (Adv. Energy Mater. 6/2014)

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Advanced Energy Materials 2014年第6期4卷

作者： Sai Bai Motao Cao Yizheng Jin Xinliang Dai Xiaoyong Liang Zhizhen Ye Min Li Jipeng Cheng Xuezhang Xiao Zhongwei Wu Zhouhui Xia Baoquan Sun Ergang Wang Yueqi Mo Feng Gao Fengling Zhang State Key Laboratory of Silicon Materials Department of Materials Science and Engineering Zhejiang University Hangzhou 310027 P. R. China Cyrus Tang Center for Sensor Materials and Applications Zhejiang University Hangzhou 310027 P. R. China Center for Chemistry of High‐Performance and Novel Materials Zhejiang University Hangzhou 310027 P. R. China Jiangsu Key Laboratory for Carbon‐Based Functional Materials & Devices Institute of Functional Nano & Soft Materials (FUNSOM) Soochow University 199 Ren'ai Road Suzhou 215123 P. R. China Department of Chemical and Biological Engineering/Polymer Technology Chalmers University of Technology SE‐412 96 Göteborg Sweden Key Laboratory of Special Functional Materials South China University of Technology Guangzhou 510640 China Biomolecular and Organic Electronics IFM and Center of Organic Electronics Linköping University SE‐581 83 Linköping Sweden

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The study on the properties of black multicrystalline silicon solar cell varying with the diffusion temperature

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Energy Procedia 2012年 14卷 505-511页

作者： Sihua Zhong Bangwu Liu Yang Xia Jinhu Liu Jie Liu Zenan Shen Zheng Xu Chaobo Li Institute of Solar Energy in School of Science Beijing Jiaotong University Beijing China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

The black multi-crystalline silicon (mc-Si) has been successfully produced by plasma immersion ion implantation. The microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spectrophotometer, respectively. Results show that the black mc-Si exhibits a hillock structure with a low reflectance. Besides, with decreasing the diffusion temperature, the external quantum efficiency of the black mc-Si solar cell increases below ∼550 nm wavelength due to reduced surface recombination. The optimal conversion effieciency of the black mc-Si solar cell is 15.50% at the diffusion temperature of 825 °C. Furthermore, it is interesting to find that there are something different between black mc-Si and acid etched mc-Si on the impact of diffusion.

关键词： black silicon diffusion temperature multicrystalline silicon solar cell

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Low Latency Compute Node Architecture Cooled by a Two Phase Fluid Flow

Low Latency Compute Node Architecture Cooled by a Two Phase ...

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2012 International Conference on Electronic Packaging technology & Hiigh Pachaging(2012电子封装和高密度封装国际会议(ICEPT-HDP2012))

作者： Qidong Wang Tianchun Ye Lixi Wan Daniel Guidotti Jie Cui Liqiang Cao Guang Zhu Fujiang Lin Qian Wang Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChi Institute of Microelectronics of the Chinese Academy of Sciences BeijingChina University of Science and Technology of China HefeiChina Tsinghua University BeijingChina

As high performance multi-core scalar CPU and vector GPU processors approach 256 GFLOPSof processing power,transport latency and bandwidth (BW) between on-board DRAM and processor become a substantial bottleneck to optimal system *** is,in large part,because board level,data transport occurs over legacy L-C transmission lines having limited BW over a limited *** a consequence,high performance,systems running memory intensive applications are able to utilize only a fraction of their available computational potential and remain idle for many clock cycles while waiting for data and instructions.A number of alternate short range transport technologies are listed in the International technology Roadmap for Semiconductors,among which the most promising is inter-chip optical *** paper proposes scalable,guided millimeter wave inter-chip communication with high speed I/Os on a common co-planar wiring net to reduce *** is taken of high order digital M-QAM modulation to scale the spectral efficiency of carrier waves *** advantage is offered by 3D DRAM stacking to achieve DRAM volume and 3D interposer stacking to achieve high I/O count and wiring escape *** compute module is designed to be enclosed and cooled by directhydrofluorocarbon jet spray or pool flow.

关键词： Bandwidth Program processors Random access memory Arrays Optical waveguides Millimeter wave technology silicon

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Tuning the structural and optical properties of bismuth titanate by different Nd substitution content

Tuning the structural and optical properties of bismuth tita...

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International Symposium on Integrated Functionalities, ISIF 2011

作者： Zang, Yongyuan Xie, Dan Chen, Yu Wu, Xiao Li, Gang Plant, David Electrical and Computer Engineering McGill University Montreal QC H3A 2T8 Canada Institute of Microelectronics Tsinghua University Beijing 100084 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China

We report the structural and optical properties variation of Bi 4-xNdxTi3O12 by different Nd substitution content for the first time. Bi4-xNdxTi 3O12 thin films were fabricated by sol-gel process. X-ray diffraction and Raman scattering analysis reveal degradation in crystallinity and increase in distortion upon Nd doping. Grain size is suppressed as the increase of Nd content. Optical transmittance decreases from 63% to 43% at the wavelength of 600 nm as the Nd content increases from 0 to 0.85. Band gap energy increases from 3.4 to 3.5 eV when Nd content increases. Refractive index and extinction coefficient variations are also investigated. Copyright © Taylor & Francis Group, LLC.

关键词： X ray diffraction

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Comparative study on structural and ferroelectric properties of dual-site rare-earth ions substituted multiferroelectric BiFeO3

Comparative study on structural and ferroelectric properties...

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International Symposium on Integrated Functionalities, ISIF 2011

作者： Zang, Yongyuan Xie, Dan Chen, Y. Li, Mohan Han, Xueguang Ren, Tianling Plant, David Electrical and Computer Engineering McGill University Montreal QC H3A 2T8 Canada Institute of Microelectronics Tsinghua University Beijing 100084 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China Chemical Engineering McGill University Montreal QC H3A 2B2 Canada

We report a comparative study of dual-site rare-earth ions substituted BiFeO3 (BFO) crystal for the first time. BFO, Bi 0.95Nd0.05Fe0.95Nb0.05O3 (BNFNO), Bi0.95Nd0.05 Fe0.95Mn 0.05O3 (BNFMO), and Bi0.95La 0.05Fe0.95Nb0.05O3 (BLFNO) thin films are prepared by sol-gel process. X-ray diffraction and Raman scattering analysis reveals a crystal transformation from rhombohedral to tetragonal upon substitution. The mean grain size decreases from 150 (BFO) to 10 nm (BNFNO) with dual-site substitution. Significant leakage current density enhancement from 1.8×10-3 (BFO) to 6.9×10-7 A/cm2 (BNFNO) at an applied electrical field of 0.1 MV/cm is observed, indicating that dualsite substitution is an effective method to modify BFO material. Copyright © Taylor & Francis Group, LLC.

关键词： X ray diffraction

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A 6-GHz ROM suitable for DDFS application in GaAs HBT technology

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Chinese science Bulletin 2011年第21期56卷 2291-2296页

作者： CHEN JianWu WANG Li WU DanYu CHEN GaoPeng JIN Zhi LIU XinYu Institute of Microelectronics Chinese Academy of SciencesBeijing 100029China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China Science and Technology Information Research Center PLA General Armament DepartmentBeijing 100142China

Read-only memory (ROM) is widely implemented as a phase-to-amplitude mapping block in direct digital frequency synthesizers (DDFS).This paper derives an equivalent model for the ROM in a DDFS to analyze and reduce the access time that is critical to the performance of the ***,the signal skew observed in the simulation waveform is *** proposed 64×3-bit ROM is integrated as a part of an 8-bit DDFS,which operates functionally at 6 *** results demonstrate the improvement in the spur free dynamic range.

关键词：直接数字频率合成器 ROM GHz GaAs 应用程序 HBT 技术只读存储器

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34 GHz Bandpass Filter for Low-temperature Co-fired Ceramic System-in-Package Application

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Chinese Journal of Mechanical Engineering 2011年第2期24卷 309-315页

作者： XU Ziqiang SHI Yu ZENG Zhiyi LIAO Jiaxuan LI Tian Research Institute of Electronic Science and Technology University of Electronic Science and Technology of China Chengdu 610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China School of Microelectronics and Solid-State Electronics University of Electronic Science and Technology of China Chengdu 610054 China

Modern electronic circuit requires compact,multifunctional technology in communication ***,it is very difficult due to the limitations in passive component miniaturization and the complication of fabrication *** bandpass filter is one of the most important passive components in millimeter（mm）-wave communication system,attracting significant interest in three-dimension（3D） miniaturized design,which is few *** this paper,a bandpass filter structure using low-temperature co-fired ceramic（LTCC） technology,which is fully integrated in a system-in package（SIP） communication module,is presented for miniaturized and high reliable mm-wave *** bandpass filter with 3D end-coupled microstrip resonators is implemented in order to achieve a high performance bandwidth ***,all of the resonators are embedded into different ceramic layers to decrease the insertion loss and enhance the out-of-band rejection performance by optimizing the coupling coefficient and the coupling strength.A fence structure,which is formed by metal-filled via array with the gap less than quarter wavelength,is placed around the embedded bandpass filter to avoid electromagnetic（EM） interference problem in multilayer *** structural model is validated through actual LTCC *** bandpass filter is successfully manufactured by modifying the co-fireablity characteristics,adjusting the sintering profile,releasing the interfacial stress,and reducing the shrinkage mismatch with different *** results show good performance and agree well with the high frequency EM full wave *** influence of layer thickness and dielectric constant on the frequency response in fabricated process is analyzed,where thicker ceramic sheets let the filter response shift to higher ***,measured S-parameters denote the center frequency is also strongly influenced by the variation of ceramic material＇s dielectric *** an

关键词： three-dimensional（3D） structure bandpass filter low-temperature co-fired ceramic（LTCC） system in package（SIP）

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