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High Efficiency Black silicon Solar Cell with Self-Cleaning Dual-Scale Textured Surface

High Efficiency Black Silicon Solar Cell with Self-Cleaning ...

The 11th International Workshop on Plasma-Based Ion Implantation & Deposition(第11届等离子基离子注入与沉积国际会议)

作者： Jie Liu Bangwu Liu Yang Xia Zenan Shen Chaobo Li Su Liu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Beijing 100029 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences Beijing 100029 China Institute of Microelectronics School of Physical Science and Technology Lanzhou University Lanzhou 730000 China Institute of Microelectronics School of Physical Science and Technology Lanzhou University Lanzhou 730000 China

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The study on the properties of black multicrystalline silicon solar cell varying with the diffusion temperature

The study on the properties of black multicrystalline silico...

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2011 2nd International Conference on Advances in Energy Engineering(ICAEE)

作者： Sihua Zhong Bangwu Liu Yang Xia Jinhu Liu Jie Liu Zenan Shen Zheng Xu Chaobo Li Institute of Solar Energy in School of Science Beijing Jiaotong University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The black multi-crystalline silicon（mc-Si） has been successfully produced by plasma immersion ion *** microstructure and the reflectance of the black mc-Si have been investigated by atomic force microscope and spectrophotometer,*** show that the black mc-Si exhibits a hillock structure with a low ***,with decreasing the diffusion temperature,the external quantum efficiency of the black mc-Si solar cell increases below 50 nm wavelength due to reduced surface *** optimal conversion effieciency of the black mc-Si solar cell is 15.50%at the diffusion temperature of 825 ℃.Furthermore,it is interesting to find that there are something different between black mc-Si and acid etched mc-Si on the impact of diffusion.

关键词： black silicon diffusion temperature multicrystalline silicon solar cell

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ATOMIC LAYER DEPOSITION HfO_(2)FILM USED AS BUFFER LAYER OF THE Pt/(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)/HfO_(2)/Si CAPACITORS FOR FeFET APPLICATION

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Journal of Advanced Dielectrics 2011年第3期1卷 369-377页

作者： DAN XIE TINGTING FENG YAFENG LUO XUEGUANG HAN TIANLING REN MARKUS BOSUND SHUO LI VELI-MATTI AIRAKSINEN HARRI LIPSANEN SEPPO HONKANEN Tsinghua National Laboratory for Information Science and Technology(TNList) Institute of Microelectronics Tsinghua UniversityBeijing 100084P.R.China Department of Micro and Nanosciences Aalto University School of Science and Technology Finland State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054P.R.China

Neodymium and manganese doped BiFeO_(3)-(Bi_(0.95)Nd_(0.05))(Fe_(0.95)Mn_(0.05))O_(3)(BNFMO)ferro-electric film and HfO_(2)layer with different thickness were fabricated using metal-organic decomposition and atomic layer deposition(ALD)method,*** ferroelectric-insulator-semiconductor(MFIS)capacitors with 200 nm thick BNFMO and 5 nm thick HfO_(2)layer on silicon substrate have been prepared and *** is found that there is no distinct interdifusion and reaction occurring at the interface between BNFMO/HfO_(2)and HfO_(2)/*** capacitance-voltage(C-V)and leakage current properties of Pt/HfO_(2)/Si capacitors with different HfO_(2)thickness were *** MFIS structure showed clockwise C-V hysteresis loops due to the ferroelectric polarization of *** maximum memory window is 5 *** current of the Pt/BNFMO/HfO_(2)/Si capacitor was about 2.1×10^(-6)A/cm^(2)at an applied voltage of 4V.

关键词： ALD HfO_(2) BFO MFIS ferroelectric capacitor

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Characterizing, modeling, and simulating soft error susceptibility in cell-based designs in highly scaled technologies

Characterizing, modeling, and simulating soft error suscepti...

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12th European Conference on Radiation and Its Effects on Component and Systems, RADECS 2011

作者： Li, Y.F. Li, M. Zhao, J.Y. Schrimpf, R.D. Fleetwood, D.M. Zhang, B. Wang, J.Q. Wang, D.L. Wang, Y. Accelicon Technologies Inc. 19925 Stevens Creek Blvd Cupertino CA 95014 United States Electrical Engineering and Computer Science Department Vanderbilt University VU Station B 351825 Nashville TN 37235-1825 United States State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China Institute of Automation Chinese Academy of Science Beijing 100190 China Institute of Microelectronics Tsinghua University Beijing 100084 China

A systematic flow is described for characterizing, modeling, and simulating single event transient-induced soft errors in cell-based designs. Pulse broadening effects are quantified for a 65 nm CMOS process. © 20... 详细信息

ISBN: (纸本)9781457705878

关键词： Radiation hardening

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Nd-doped Bismuth Titanate based ferroelectric field effect transistor: Design, fabrication, and optimization

Nd-doped Bismuth Titanate based ferroelectric field effect t...

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IEEE Conference on Electron devices and Solid-State Circuits

作者： Tingling Feng Dan Xie Yongyuan Zang Xaio Wu Yafeng Luo Tianling Ren Markus Bosund Shuo Li Veli-Matti Airaksinen Harri Lipsanen Seppo Honkanen Tsinghua National Laboratory for information Science and Technology (TNList) Institute of Microelectronics Tsinghua University Beijing China State Key Laboratory of Electronic Thin Final and Intergrated Devices University of Electronic science and Technology of China Chengdu China Electrical and Computer Engineering McGill University Montreal QUE Canada Department of micro and Nanosciences Aalto University of Science and Technology Finland

Ferroelectric field effect transistor (FeFET) is a promising candidate in nonvolatile memory application due to its fast read/write speed, nondestructive readout, and low power consumption. Since the poor retention characteristic can be improved by introducing insulator buffer layers between gate layer and FET channel region, more and more attentions are devoted to the realization and optimization of this novel memory device [1]. Traditional ferroelectric materials, such as PZT [2, 3] and SBT [4] based FeFETs are extensively studied and reported in the past decades. Recently, Nd-doped Bismuth Titanate B 3.15 Nd 0.85 Ti 3 O 12 (BNdT) with a large remnant polarization (2Pr=103μC/cm 2 ) and outstanding fatigue endurance was reported by Chon et al. [5], and many ferroelectric applications are being processed based on this brand new ferroelectric material [6, 7]. In this letter, we fabricated a BNdT based FeFET for the first time. The fundamental structural and electrical properties are investigated correspondingly.

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Characterizing, modeling, and simulating soft error susceptibility in cell-based designs in highly scaled technologies

Characterizing, modeling, and simulating soft error suscepti...

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European Conference on Radiation and its Effects on Components and Systems (RADECS)

作者： Y. F. Li M. Li J. Y. Zhao R. D. Schrimpf D. M. Fleetwood B. Zhang J. Q. Wang D. L. Wang Y. Wang Accelicon Technologies Inc. Cupertino CA USA Electrical Engineering and Computer Science Department Vanderbilt University Nashville TN USA State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology Chengdu China Institute of Automation Chinese Academy of Sciences Beijing China Institute of Microelectronics Tsinghua University Beijing China

关键词： Boolean functions Data structures Pulse measurements Inverters Logic gates Delay SPICE

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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors(HEMTs)

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Chinese Physics B 2009年第7期18卷 2912-2919页

作者：范隆郝跃赵元富张进城高志远李培咸 Beijing Microelectronics Technology Institute The School of Microelectronics Xidian University Key Laboratory of Fundamental Science for National Defense of Wide Bandgap Semiconductor Technology Xidian University Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education Xidian University

Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures,we set up a radiation damage model of AlGaN/GaN high electron mobility transistor （HEMT） to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously considering the degradation in mobility. Our calculated results,consistent with the experimental results,indicate that thin AlGaN barrier layer,high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HEMT;when the acceptor concentration induced is less than 10^14cm-3,the shifts in threshold voltage are not obvious;only when the acceptor concentration induced is higher than 10^16cm-3,will the shifts of threshold voltage remarkably increase;the increase of threshold voltage,resulting from radiation induced acceptor,mainly contributes to the degradation in drain saturation current of the current-voltage （Ⅰ-Ⅴ） characteristic,but has no effect on the transconductance in the saturation area.

关键词： GaN-based high electron mobility transistor （HEMT） radiation acceptor defects

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Electronic transport properties of an (8,0) carbon/silicon-carbide nanotube heterojunction

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Journal of Semiconductors 2009年第5期30卷 5-8页

作者：刘红霞张鹤鸣张志勇 Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Institute of Information Science and Technology Northwest University

A two-probe system of the heterojunction formed by an （8, 0） carbon nanotube （CNT） and an （8, 0） silicon carbide nanotube （SiCNT） was established based on its optimized structure. By using a method combining nonequilibrium Green＇s function （NEGF） with density functional theory （DFF）, the transport properties of the het-erojunction were investigated. Our study reveals that the highest occupied molecular orbital （HOMO） has a higher electron density on the CNT section and the lowest unoccupied molecular orbital （LUMO） mainly concentrates on the interface and the SiCNT section. The positive and negative threshold voltages are ＋1.8 and -2.2 V, respectively.

关键词： carbon/silicon carbide nanotube heterojunction nonequilibrium Green＇s function transport properties

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Fabrication of 11-nm-Wide Silica-Like Lines Using X-Ray Diffraction Exposure

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中国物理快报（英文版） 2009年第8期26卷 271-273页

作者： ZHU Xiao-Li XIE Chang-Qing ZHANG Man-Hong LIU Ming CHEN Bao-Qin PAN Feng Laboratory of Advanced Materials Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084 Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijin Key Laboratory of Nano-fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029 Laboratory of Advanced Materials Department of Materials Science and EngineeringTsinghua UniversityBeijing 100084

Fine silica-like lines with 11 nm width are successfully fabricated using x-ray Fresnel diffraction exposure. X-rays pass a mask of 175-nm-wide lines and 125-nm-wide spaces and form sharp peaks on a wafer coated with a layer of hydrogen silsesquioxane resist (HSQ). By precisely controlling the mask-wafer gap at 10 μm using the laser interferogram method, the fine structures are defined on HSQ. Experimental images are reproduced by a simulation using the one-dimensional beam propagation method. This lithographic technique presents a novel and convenient way to fabricate fine silica-like structures and devices in nano-optical and nanoelectronic applications.

关键词： MICROFABRICATION X-ray diffraction SILICA SEMICONDUCTOR wafers SURFACE coatings BEAM dynamics SIMULATION methods & models LITHOGRAPHY techniques NANOELECTRONICS

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Problems on fabrication of computer-generated holograms for testing aspheric surfaces

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Chinese Optics Letters 2009年第1期7卷 70-73页

作者：马骏高志山朱日宏何勇陈磊李建欣潘裕斌 W.H.Wong 黄立辉谢常青朱效立马杰 Department of Optical Engineering Nanjing University of Science and Technology Department of Electronic Engineering City University of Hong KongKowloon Tang Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

Interferometric optical testing using computer-generated hologram （CGH） can give highly accurate measurement of aspheric surfaces has been proved. After the system is designed, a phase function is obtained according to the CGH＇s surface plane. For the requirement of accuracy, an optimization algorithm that transfers the phase function into a certain mask pattern file is presented in this letter, based on the relationship between the pattern error of CGH and the output wavefront accuracy. Then the writing machine is able to fabricate such a mask with this kind of file. With that mask, an improved procedure on fabrication of phase type CGH is also presented. Interferometrie test results of an aspherie surface show that the whole test system obtains the demanded accuracy.

关键词： Computer generated holography Electron holography Holograms Interferometry Masks Optical testing Probability density function

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