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An AND-type 1T-FeFET array with robust write and read operations

Science China(Information Sciences) 2025年第2期68卷 395-396页

作者： Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].

关键词： Ferroelectric devices

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Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications

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Science China(Information Sciences) 2023年第6期66卷 313-314页

作者： Zhongxin LIANG Yang ZHAO Kaifeng WANG Jieyin ZHANG Jianjun ZHANG Ming LI Ru HUANG Qianqian HUANG Key Laboratory of Microelectronics Devices and Circuits (MOE) School of Integrated CircuitsPeking University Key Laboratory of Nanophysics and Devices Institute of PhysicsChinese Academy of Sciences Beijing Advanced Innovation Center for Integrated Circuits

Silicon-based tunneling field effect transistor(TFET) with a band-to-band tunneling mechanism has been widely studied due to its ultra-steep subthreshold swing(SS),ultralow leakage current(Ioff),and good complementary...

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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET

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Science China(Information Sciences) 2022年第6期65卷 241-246页

作者： Mengxuan YANG Qianqian HUANG Kaifeng WANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs(TFETs) and negative capacitance FETs(NCFETs) can break the subthreshold swing limitation(60 mV/dec at room temperature) of conventional metal-oxide-semiconductor field-effect transistor(MOSFET) to reduce the operating voltage and thus power consumption. However, induced by the band-to-band tunneling mechanism, TFETs have a subthreshold swing degradation issue and relatively low ON current. Although NCFETs with ferroelectric/dielectric gate stack can theoretically maintain a high ON current comparable to conventional MOSFET, the physical origin of sub-60 SS is controversial and the mechanism of switching behavior in NCFET is still not clear. In this work, by experimentally investigating the whole negative differential capacitance process and its gate voltage amplification coefficient, an intrinsic issue of SS degradation with increased gate voltage is also found in NCFET for the first time. Based on the physical investigation and simulation results, it is shown that the intrinsic SS degradation in NCFET is resulting from the instant dielectric polarization response. Both the decrease of dielectric thickness and the increase of dielectric constant may lead to the severer SS degradation, which is not favorable for scaled NCFETs.

关键词： ferroelectric negative differential capacitance effect polarization low power voltage amplification

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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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Science China(Information Sciences) 2024年第10期67卷 100-114页

作者： Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology

Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive skills. As a promising hardware solution for edge MoE implementations, the computing-in-memory(CIM) architecture collocates memory and computing within a single device, significantly reducing the data movement and the associated energy consumption. However, due to diverse edge application scenarios and constraints, determining the optimal network structures for MoE, such as the expert's location,quantity, and dimension on CIM systems remains elusive. To this end, we introduce a software-hardware co-designed neural architecture search(NAS) framework, CIM-based MoE NAS(CMN), focusing on identifying a high-performing MoE structure under specific hardware constraints. The results of the NYUD-v2 dataset segmentation on the RRAM(SRAM) CIM system reveal that CMN can discover optimized MoE configurations under energy, latency, and performance constraints, achieving 29.67×(43.10×) energy savings,175.44×(109.89×) speedup, and 12.24× smaller model size compared to the baseline MoE-enabled Visual Transformer, respectively. This co-design opens up an avenue toward high-performance MoE deployments in edge CIM systems.

关键词： mixture-of-experts computing-in-memory neural architecture search resistive random-access memory static random-access memory

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors

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Science China(Information Sciences) 2022年第6期65卷 277-278页

作者： Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息

关键词： Ferroelectric Negative differential capacitance effect Polarization Low power Subthreshold swing

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Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET

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Science China(Information Sciences) 2021年第2期64卷 271-272页

作者： Zhexuan REN Xia AN Gensong LI Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

Dear editor,Strain technology has become a common solution in the semiconductor manufacturing industry since 90-nm technology node to overcome the severe carrier mobility degradation of nanoscale microelectronic devices [1]. Since layout may affect the stress distribution, layout dependent effect(LDE)becomes a serious issue in advanced technology nodes.

关键词： Information Systems and Communication Service

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Assessing high-energy x-ray and proton irradiation effects on electrical properties of P-GaN and N-GaN thin films

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Chinese Physics B 2023年第7期32卷 443-447页

作者：钟傲雪王磊唐蕴杨永涛王进进朱慧平吴真平唐为华李博 State Key Laboratory of Information Photonics and Optical Communications&School of Science Beijing University of Posts and TelecommunicationsBeijing 100876China Institute of Microelectronics and Key Laboratory of Science and Technology on Silicon Devices Chinese Academy of SciencesUniversity of Chinese Academy of SciencesBeijing 100029China School of Integrated Circuits&State Key Laboratory of Information Photonics and Optical Communications Beijing University of Posts and TelecommunicationsBeijing 100876China

The effects of ionizing and displacement irradiation of high-energy x-ray and 2-MeV proton on GaN thin films were investigated and compared in this *** electrical properties of both P-GaN and N-GaN,separated from power devices,were gauged for fundamental *** was found that the electrical properties of P-GaN were improved as a consequence of the disruption of the Mg-H bond induced by high-dose x-ray irradiation,as indicated by the Hall and circular transmission line ***,under a 100-Mrad(Si)x-ray dose,the specific contact resistance pc of P-GaN decreased by 30%,and the hole carrier concentration increased ***,the atom displacement damage effect of a 2-MeV proton of 1×10^(13)p/cm^(2)led to a significant degradation of the electrical properties of P-GaN,while those of N-GaN remained unchanged.P-GaN was found to be more sensitive to irradiation than N-GaN thin *** effectiveness of x-ray irradiation in enhancing the electrical properties of P-GaN thin films was demonstrated in this study.

关键词： x-ray radiation proton radiation GaN circular transmission line model(CTLM)

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Experimental Demonstration of A CT-FeFET Array with Intrinsic Long-Short-Term Plasticity for Low-Cost Trajectory Prediction

Experimental Demonstration of A CT-FeFET Array with Intrinsi...

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2024 IEEE International Electron devices Meeting, IEDM 2024

作者： Li, Chao Yu, Jie Zhang, Xumeng Zhang, Zhaohao Zhu, Fangduo Ouyang, Siyuan Chen, Pei Cheng, Lingli Xu, Gaobo Zhang, Qingzhu Yin, Huaxiang Liu, Qi Liu, Ming State Key Laboratory of Integrated Chips and Systems Frontier Institute of Chip and System Fudan University Shanghai200438 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9798350365429

Trajectory prediction is a vital function in the auto-driving field, typically achieved with a long short-term memory network. Static IMC technology accelerates the computing of long-term parameters, while the execution of short-term parameters faces great buffer overhead. Inspired by the fused long-short-term synaptic plasticity in biology, here, we proposed a dynamic IMC strategy based on a charge-trapping FeFET array with intrinsic long-short-term plasticity. The long-term weights are stored in the ferroelectric domain, while the short-term weights are in-situ dynamically operated in a charge-trapping domain, eliminating the external caching process. We further demonstrated a dynamic IMC neuromorphic system built on this array for performing trajectory prediction of moving vehicles, achieving more than 1000× and 4× improvements than GPU in power consumption and memory overhead. © 2024 IEEE.

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A Fully BEOL-compatible (300°C Annealing) IGZO FeFET with Ultra-high Memory Window (10V) and Prominent Endurance (109)

A Fully BEOL-compatible (300°C Annealing) IGZO FeFET with U...

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2024 IEEE International Electron devices Meeting, IEDM 2024

作者： Xu, Pan Jiang, Pengfei Yang, Yang Peng, Xueyang Wei, Wei Gong, Tiancheng Wang, Yuan Long, Xiao Niu, Jiebin Xu, Zhongguang Zhu, Chenxin Wu, Zhenhua Luo, Qing Liu, Ming Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China University of Science and Technology of China Anhui Hefei China

ISBN: (纸本)9798350365429

HfO2-based FeFET paves the way for the next generation NVM thecnology, however, demands for high memory window (MW) and roubust reliability (especially the endurance) cannot be combined in the current reported devices, and the contradiction of high MW and low thermal budget (aiming for BEOL compatibility) also needs to be solved. In this work, we propose an integrated ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) and amorphous In-Ga-Zn-O (a- IGZO) channel FeFET with a maximum 10V MW and prominent endurance up to 109. Workfunction (WF) engineering is utilized to regualtethe intrinsic Vt to improve the PGM/ERS efficiency with full-loop polarization switching, and the adopted Mo gate can effectively reduce the thermal budget to 300°Censuringa fully BEOL compatibility. Then with O3-plasma treatment to the gate electrode, the introduced tunneling layer can futher improve the MW by gate charge injection. The demonstrated FeFET shows great 3-bit/cell storage ability without states overlapping, high Ion/Ioff ratio (>107), as well as great linearity and high Gmax/Gmin (286) during synaptic weight modulation. © 2024 IEEE.

关键词： Budget control

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A centripetal collection image sensor(CCIS) based on back gate modulation achieving 1T submicron pixel

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Science China(Information Sciences) 2022年第4期65卷 282-284页

作者： Liqiao LIU Guihai YU Gang DU Xiaoyan LIU Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

Dear editor,Image sensors have been rapidly developed for decades and widely used in many different fields [1, 2]. To achieve high resolution, the pixel size has been scaled down to 1 μm for mass production [3]. Nevertheless, the pixel size has to be further reduced to meet the growing demand for higher resolution. In CMOS image sensor(CIS), the pixel is composed of a photodiode, reset transistor,

关键词： Image sensor submicron pixel back gate modulation pixel crosstalk Silicon on insulator

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