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China Semiconductor Technology International Conference (CSTIC)

作者： Baotong Zhang Xiaokang Li Yuancheng Yang Haixia Li Ru Huang Ming Li Peimin Lu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China College of Physics and Information Engineering Fuzhou University Fuzhou China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conventional flat electrode RRAM. The underlying physical mechanism is attributed to the enhanced electric field by the nanopillar electrode. This research will provide a valuable guidance for future scaling of oxide-based RRAM.

关键词： Electrodes Performance evaluation Resistance Electric potential Switches Hafnium compounds Electric fields

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Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET

Demonstration of Vertically-stacked CVD Monolayer Channels: ...

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International Electron devices Meeting (IEDM)

作者： Xiong Xiong Anyu Tong Xin Wang Shiyuan Liu Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics Key Laboratory of Microelectronic Devices Circuits (MoE) Peking University Beijing Beijing China Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan China Frontiers Science Center for Nano-Optoelectronics Peking University Beijing China

ISBN: (纸本)9781665425735

Vertical stacking of atomic layer thin channel has been challenging due to the top-gate dielectric integration and complicated process, which typically yield in deteriorated performance. In this work, we demonstrate the 2-monolayer-MoSc-stacked nanosheets with a sequentially layer-by-layer fabrication process using a gate-a11-around fashion. Compared with the 1-channel back-gate transistor, the 2-channel stacked nanosheets (SN) transistor exhibits more than twice of gm improvement. The high I on >400 µA/µm per channel footprint at V d = 1 V is achieved due to short gate length of 100 nm, and low contact resistance of 0.77 k Ω*µm. Statistics of hundreds of devices with various channel lengths show the performance evolution trend and monolithic integration potential based on the large-scale CVD -grown 2D materials. Furthermore, the vertical-stacked MoS 2 /WSe 2 complementary FETs (CFETs) based on CVD grown are also demonstrated for the first time with about 50% footprint reduction, as compared to the planar devices.

关键词： Performance evaluation Stacking Monolithic integrated circuits Logic gates Ions Contact resistance Market research

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Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition

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Science China Materials 2020年第6期63卷 1065-1075页

作者： Shike Hu Jing Li Xiaoyi Zhan Shuang Wang Longbiao Lei Yijian Liang He Kang Yanhui Zhang Zhiying Chen Yanping Sui Da Jiang Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

This study reports the growth of aligned monolayer molybdenum disulfide(MoS2)ribbons on a sapphire substrate via NaOH-assisted chemical vapor *** length of MoS2 ribbon is up to 400μ*** MoS2 ribbon has excellent single crystal properties,a carrier mobility of^150 cm^2V^-1s^-1,and a optical response of 103 mA W^-1 at a wavelength of 550 *** growth model of MoS2 ribbons was *** reacts with MoO3 to form sodium molybdate droplets,which increase the fluidity of the molybdenum source on the substrate,realizing the vapor-liquid-solid growth of MoS2 on *** monolayer MoS2 ribbons have two kinds of arrangements on the sapphire substrate,one is the oriented growth affected by the interlayer van der Waals force and the lattice,and the other is the aligned growth constrained by the sapphire *** results promote the basic research and device applications of MoS2,and introduce a new way of synthesizing other one dimensional(1D)and 2D nanostructures.

关键词： MoS2 aligned ribbons vapor-liquid-solid step epitaxy

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TCAD Simulation on Random Telegraphy Noise and Grain-Induced Fluctuation of 3D Nand Cell Transisitors

TCAD Simulation on Random Telegraphy Noise and Grain-Induced...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shijie Hu Ming Li Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA Frontiers Science Center for Nano-optoelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a TCAD simulation platform was set up to study the real poly-channel modeling, trap-induced noise and random grain doping in 3D NAND cell transistor. The random telegraph noise and size dependence was simulated and analyzed. Simulation results show that the RTN and grain size change have greater influence on threshold voltage (V T ) and channel current (I D ) in 3D NAND than doping fluctuation. It is shown that the instability caused by random doping cannot be ignored, too.

关键词： Solid modeling Three-dimensional displays Fluctuations Doping Tools Semiconductor process modeling Transistors

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Highly-Sensitive FET-based Sensor via Heterogeneous Selective-Assembling Integration of Porphyrin and Silicon Nanowires

Highly-Sensitive FET-based Sensor via Heterogeneous Selectiv...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Xiaokang Li Bocheng Yu Gong Chen Ming Li Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Frontiers Science Center for Nano-optoelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this paper, we proposed and fabricated a novel heterogeneous porphyrin/silicon nanowire transistor-based sensor using CMOS process technology. With the difference in hydrophobicity of Si 3 N 4 and SiO 2 , the enrichment of porphyrin molecules on silicon nanowires was achieved, and the device showed highly sensitive photo-sensing even under very low illumination power (ΔVt=3.32V @11.3μW/cm 2 ), great dynamic photo-memory characteristic (ΔV t =31.3V @ programming/erasing time of 10s) and excellent temperature sensing (ΔV t =13.6V @ 90°C temperature range). Those performances make the devices applicable to be used in applications of sensitive and smart non-memory light sensing and reliable temperature sensing.

关键词： Nanowires Silicon Sensors Temperature sensors Threshold voltage Sensitivity Transistors

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First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design

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Journal of Microelectronic Manufacturing 2020年第4期3卷 32-39页

作者： Kun Luo Kui Gong Jiangchai Chen Shengli Zhang Yongliang Li Huaxiang Yin Zhenhua Wu Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China IMECAS-MU-HZW joint computing laboratory of Integrated Circuits Beijing 100029China MIIT Key Laboratory of Advanced Display Materials and Devices School of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China.

The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium Green’s function *** dimensional(2D)monolayer MoTe2 and SnS2 are combined to a vertical van der Waals heterojunction.A small staggered band gap is formed in the overlap region,while larger gaps remain in the underlap source and drain regions of monolayer MoTe2 and SnS2 *** a type-II heterojunction is favorable for tunneling ***,we suggest short stack length and large gate-to-drain overlap to enhance the on-state current suppress the leakage current *** numerical results show that at a low drain to source voltage Vds=0.05V,On/Off current ratio can reach 108 and the On-state currents is over 20μA/μm for ntype *** results present that van der Waals heterostructure TFETs can be potential candidate as next generation ultra-steep subthreshold and low-power electronic applications.

关键词： 2D materials heterojunction tunnel-FET gate-to-drain overlap DFT-NEGF.

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MXenes induce epitaxial growth of size-controlled noble nanometals:A case study for surface enhanced Raman scattering(SERS)

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Journal of Materials Science & Technology 2020年第5期40卷 119-127页

作者： Renfei Cheng Tao Hu Minmin Hu Changji Li Yan Liang Zuohua Wang Hui Zhang Muchan Li Hailong Wang Hongxia Lu Yunyi Fu Hongwang Zhang Quan-Hong Yang Xiaohui Wang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Materials Science and Engineering University of Science and Technology of ChinaShenyang 110016China University of Chinese Academy of Sciences Beijing 100049China National Engineering Research Center for Equipment and Technology of Cold Strip Rolling College of Mechanical EngineeringYanshan UniversityQinhuangdao 066004China Department of Materials Science and Engineering Monash UniversityClaytonVictoria 3800Australia Institute of Microelectronics Key Laboratory of Microelectronic Devices and CircuitsPeking UniversityBeijing 100871China School of Materials Science and Engineering Zhengzhou UniversityZhengzhou 450001China School of Chemical Engineering&Technology Tianjin UniversityTianjin 300072China

Noble nanometals are of significance in both scientific interest and technological applications,which are usually obtained by conventional wet-chemical *** surfactants are always used in the synthesis to prevent unexpected overgrowth and aggregation of noble ***,the surfactants are hard to remove and may interfere with plasmonic and catalytic studies,remaining surfactant-free synthesis of noble nanometals a ***,we report an approach to epitaxial growth of sizecontrolled noble nanometals on *** piloted by density functional theory calculations,along with work function experimental determination,kinetic and spectroscopic studies,epitaxial growth of noble nanometals is initiated via a mechanism that involves an in situ redox *** the redox,MXenes as two-dimensional solid reductants whose work functions are compatible with the reduction potentials of noble metal cations,enable spontaneous donation of electrons from the MXenes to noble metal cations and reduce the cations into nanoscale metallic metals on the outmost surface of *** surfactants nor external reductants are used during the whole synthesis process,which addresses a long-standing interference issue of surfactant and external reductant in the conventional wet-chemical ***,the MXenes induced noble nanometals are ***,noble nanometals firmly anchored on MXenes exhibit excellent performance towards surface enhanced Raman *** developed strategy will promote the nanostructure-controlled synthesis of noble nanometals,offering new opportunities to further improve advanced functional properties towards practical applications.

关键词： Two-dimensional materials MXene In situ redox Noble metal SERS

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A Novel Conversion Method for Spiking Neural Network using Median Quantization

A Novel Conversion Method for Spiking Neural Network using M...

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IEEE International Symposium on circuits and Systems (ISCAS)

作者： Chenglong Zou Xiaoxin Cui Jiexian Ge Hanghang Ma Xinan Wang Key Laboratory of Microelectronics Devices and Circuits Institute of Microelectronics Peking University Beijing 100871 China Key Laboratory of Integrated Microsystem School of ECE Peking University Shenzhen Graduate School Shenzhen 518055 China Key Laboratory of Integrated Microsystem School of ECE Peking University Shenzhen Graduate School Shenzhen 518055 China

ISBN: (数字)9781728133201

ISBN: (纸本)9781728133218

Artificial Neural Networks (ANNs) have achieved great success in the field of computer vision and language understanding. However, it is difficult to deploy these deep learning models on mobile devices because of its massive energy consumption and memory occupation. For another way, highly inspired from biological brain, spiking neural networks (SNNs), are often referred to as the 3-th generation of neural network for its potential superiority in cognitive learning and energy efficiency. Nevertheless, training a deep SNN remains a big challenge. In this paper, we propose a quantized training algorithm for ANNs to minimize spike approximation error, and provide two (temporally or spatially) rate-based conversion methods for SNNs, both of which can be easily mapped to specific neuromorphic platforms. Besides, this novel method can be generalized to various network architectures and adapted to dynamic quantization demand. Experimental results on MNIST and CIFAR-10 dataset demonstrate that the proposed deep spiking neural networks yield the state-of-the-art classification accuracy and need much less operations compared with their ANN counterparts. Our source code will be available upon request for the academic purpose.

关键词： Quantization (signal) Neurons Biological neural networks Encoding Training Upper bound Artificial neural networks

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Corrigendum to “Epitaxial growth of wafer scale antioxidant single-crystal graphene on twinnedPt(111)” [Carbon 181 (2021) 225-233]

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Carbon 2021年 182卷 863-864页

作者： He Kang Pengtao Tang Haibo Shu Yanhui Zhang Yijian Liang Jing Li Zhiying Chen Yanping Sui Shike Hu Shuang Wang Sunwen Zhao Xuefu Zhang Chengxin Jiang Yulong Chen Zhongying Xue Miao Zhang Da Jiang Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China College of Optical and Electronic Technology China Jiliang University 310018 Hangzhou China Microwave Devices and Integrated Circuits Department Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

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A Novel Electrical Isolation Solution for Tunnel FET Integration

A Novel Electrical Isolation Solution for Tunnel FET Integra...

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China Semiconductor Technology International Conference (CSTIC)

作者： Ting Li Qianqian Huang Le Ye Yuan Zhong Mengxuan Yang Yiqing Li Yimei Li Zhongxin Liang Ru Huang School of Electronic Information Engineering Anhui University Hefei China Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, for bulk tunnel field-effect transistors (TFET), the electrical isolation solutions between neighboring devices for TFET integration are investigated. To suppress the leakage current of the P-type doped regions through the P-type substrate, a new effective isolation method is proposed and verified via simulation. The simulation shows the leakage current can be reduced from 10 -5 A/μm to 10 -13 A/μm. The solution is beneficial for TFETs to keep its advantages for ultra-low power applications such as implantable medical devices and Internet of Things.

关键词： TFETs Medical devices Leakage currents Low-power electronics Internet of Things Substrates

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