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Structure-dependent behaviors of diode-triggered silicon controlled rectifier under electrostatic discharge stress

Chinese Physics B 2016年第12期25卷 507-513页

作者：张立忠王源何燕冬 Key Laboratory of Microelectronic Devices and Circuits (Ministry of Education)Institute of Microelectronics Peking University

The comprehensive understanding of the structure-dependent electrostatic discharge behaviors in a conventional diode-triggered silicon controlled rectifier （DTSCR） is presented in this paper. Combined with the device simulation, a mathematical model is built to get a more in-depth insight into this phenomenon. The theoretical studies are verified by the transmission-line-pulsing （TLP） test results of the modified DTSCR structure, which is realized in a 65-nm complementary metal-oxide-semiconductor （CMOS） process. The detailed analysis of the physical mechanism is used to provide predictions as the DTSCR-based protection scheme is required. In addition, a method is also presented to achieve the tradeoff between the leakage and trigger voltage in DTSCR.

关键词： electrostatic discharge （ESD） diode-triggered silicon controlled rectifier （DTSCR） transmission-line-pulsing （TLP） mathematical modeling

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Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric

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Chinese Physics Letters 2017年第5期34卷 101-105页

作者：王盛凯马磊常虎东孙兵苏玉玉钟乐李海鸥金智刘新宇刘洪刚 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 Guangxi Experiment Center of Information Science Guilin University of Electronic Technology Guilin 541004 Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu 610200

Positive bias temperature instability stress induced interface trap density in a buried InGaAs channel metaloxide-semiconductor field-effect transistor with a InCaP barrier layer and Al2O3 dielectric is investigated. Well behaved split C-V characteristics with small capacitance frequency dispersion are confirmed after the insertion of the InCaP barrier layer. The direct-current Id-Vg measurements show both degradations of positive gate voltage shift and sub-threshold swing in the sub-threshold region, and degradation of positive △Vg in the oncurrent region. The Id-Vg degradation during the positive bias temperature instability tests is mainly contributed by the generation of near interface acceptor traps under stress. Specifically, the stress induced aeceptor traps contain both permanent and recoverable traps. Compared with surface channel InCaAs devices, stress induced recoverable donor traps are negligible in the buried channel ones.

关键词： InGaAs Positive Bias Temperature Instability Degradation of Buried InGaAs Channel nMOSFETs with InGaP Barrier Layer and Al2O3 Dielectric MOSFET Al

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基于纳米离子栅控的新型神经形态器件研究

基于纳米离子栅控的新型神经形态器件研究

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中国真空学会2018学术年会

作者： Yuchao Yang Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking UniversityBeijing 100871China

Nanoionics based devices and networks are intriguing candidates for the construction of new computing systems that could perform intelligent and energy-efficient *** this talk,I will discuss recent progresses in the development of neuromorphic devices and networks,as well as a few critical challenges existing in the mechanism,device and network levels that must be overcome[1-2].

关键词： Neuromorphic computing synaptic plasticity ionic gating diffusive dynamics

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Design of a novel static-triggered power-rail ESD clamp circuit in a 65-nm CMOS process

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Science China Earth Sciences 2016年第12期59卷 166-174页

作者： Guangyi LU Yuan WANG Lizhong ZHANG Jian CAO Xing ZHANG Key Laboratory of Microelectronie Devices and Circuits(MoE) Institute of MicroelectronicsPeking UniversityBeijing 100871China

This work presents the design of a novel static-triggered power-rail electrostatic discharge(ESD)clamp circuit. The superior transient-noise immunity of the static ESD detection mechanism over the transient one is firstly discussed. Based on the discussion, a novel power-rail ESD clamp circuit utilizing the static ESD detection mechanism is proposed. By skillfully incorporating a thyristor delay stage into the trigger circuit(TC), the proposed circuit achieves the best ESD-conduction behavior while consuming the lowest leakage current(Ileak) at the normal bias voltage among all investigated circuits in this work. In addition, the proposed circuit achieves an excellent false-triggering immunity against fast power-up pulses. All investigated circuits are fabricated in a 65-nm CMOS process. Performance superiorities of the proposed circuit are fully verified by both simulation and test results. Moreover, the proposed circuit offers an efficient on-chip ESD protection scheme considering the worst discharge case in the utilized process.

关键词： electrostatic discharge （ESD） power-rail ESD clamp circuit detection mechanism transient-noise immunity false triggering transmission line pulsing （TLP） test

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Design of a Novel Ternary SRAM Sense Amplifier Using CNFET

Design of a Novel Ternary SRAM Sense Amplifier Using CNFET

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2017 IEEE 12th International Conference on ASIC

作者： Zizhao Liu Tao Pan Song Jia Yuan Wang Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsEECSPeking University

This paper presents a novel design of a ternary SRAM sense amplifier using carbon nanotube field-effect transistors(CNFETs).Chirality of CNFET is used to control the threshold voltage to realize the ternary *** results using HSPICE shows that the proposed SRAM sense amplifier perform correctly at 0.9 V supply voltage in the ternary SRAM read *** it can achieve 87.5% and 88.5% enhancement in speed,84.2% and 85.6% in PDP,compared with a ternary DRAM sense amplifier and the ternary SRAM without sense amplifier.

关键词： ternary CNFET sense amplifier

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Corrections to “A Novel Tunnel FET Design Through Adaptive Bandgap Engineering With Constant Sub-Threshold Slope Over 5 Decades of Current and High ${I_{{\mathrm {ON}}}}/{I_{{\mathrm {OFF}}}}$ Ratio” [May 17 540-543]

IEEE Electron Device Letters

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IEEE Electron Device Letters 2018年第4期39卷 638-638页

作者： Yang Zhao Chunlei Wu Qianqian Huang Cheng Chen Jiadi Zhu Lingyi Guo Rundong Jia Zhu Lv Yuchao Yang Ming Li Ru Huang Key Laboratory of Microelectronics Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China

In the above paper, there is an error in the information of corresponding author’s email address. The corrected corresponding author’s email address information is provided.

关键词： Germanium silicon alloys Field effect transistors TFETs Low-power electronics Semiconductor device manufacture

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A compact SCR model using advanced BJT models and standard SPICE elements

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Science China(Information Sciences) 2016年第10期59卷 248-250页

作者： Jian CAO Jingya XU Yuan WANG Guangyi LU Xing ZHANG Key Laboratory of Microelectronic Devices and Circuits (Ministry of Education) Institute of MicroelectronicsPeking University School of Software & Microelectronics Peking University

Dear editor,The Silicon controlled rectifiers(SCR)are widely used to protect integrated circuits(ICs)from electrostatic discharge(ESD)and electrical overstress(EOS)damage[1].An accurate SCR model is highly desirable in on-chip ESD protection *** studies modeled SCRs by aggregating conventional bipolar junction transistor(BJT)models and adding extra physical models that conventional BJT models fail to support[2,3].However the auxiliary models are mostly complicated

关键词： SPICE SCR A compact SCR model using advanced BJT models and standard SPICE elements BJT

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Artificial Synapse: Reconfigurable Artificial Synapses between Excitatory and Inhibitory Modes Based on Single-Gate Graphene Transistors (Adv. Electron. Mater. 5/2019)

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Advanced Electronic Materials 2019年第5期5卷

作者： Yao Yao Xinnan Huang Songang Peng Dayong Zhang Jingyuan Shi Guanghui Yu Qi Liu Zhi Jin High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China

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Simulation of a Novel Integrated 4H-SiC Temperature Sensor

Simulation of a Novel Integrated 4H-SiC Temperature Sensor

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International Conference on Solid-State and Integrated Circuit Technology

作者： Hang Gu Yourun Zhang Juntao Li Yidan Tang Yun Bai High-Frequency High-Voltage Devices and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China The State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronics Science and Technology of China Chengdu China Microsystem and Terahertz Research Center China Academy of Engineering Physics Chengdu China

This paper presents a novel integrated Schottky barrier diode temperature sensor in a 4H-SiC power MOSFET. Dual electrical isolation and additional current path are applied to this temperature sensor, allowing the sensor to work properly in any operating state of power MOSFET. Due to the sufficient electrical isolation, the crosstalk between sensor and power MOSFET is almost eliminated. Furthermore, high sensitivity S=1.21mV/K is observed for a constant bias current of I d =1mA. The temperature sensor exhibits a good degree of linearity with a root mean square error R 2 =0.99996.

关键词： Temperature sensors Temperature measurement MOSFET Current measurement Junctions Schottky diodes Crosstalk

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Design and simulation of 4H-SiC MESFET ultraviolet photodetector with gain 11th

Design and simulation of 4H-SiC MESFET ultraviolet photodete...

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11th European Conference on Silicon Carbide and Related Materials, ECSCRM 2016

作者： Bai, Yun Li, Chengzhan Shen, Huajun Yang, Chengyue Tang, Yidan Liu, Xinyu Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China High-Frequency High-Voltage Device and Integrated Circuits R&D Center Institute of Microelectronics of Chinese Academy of Sciences Beijing China ZhuZhou CRRC Times Electric CO. LTD. ZhuzhouHunan China

ISBN: (纸本)9783035710434

The 4H-SiC ultraviolet detector of the MESFET structure with gain is proposed and simulated in this paper. The Schottky gate of MESFET is transparent or semi-transparent to allow more of the incident UV light to be absorbed in the device. The effect of the doping and thickness of the channel layer on the photocurrent of the 4H-SiC MESFET UV detector is simulated and the effect mechanism is analyzed. The simulation results show that the 4H-SiC MESFET exhibits photocurrent below 380 nm. And only when the channel of the 4H-SiC MESFET is in the open state there will be a gain in the detector. Shorter gate length is beneficial to improve the responsivity and the gain of the 4H-SiC MESFET UV detector. When the gate length is set to 10 μm with the channel thickness of 0.3 μm and channel doping of 1×1017 cm-3, the peak responsivity and the gain are calculated to be 12.9 A/W and 55.6 respectively. © 2017 Trans Tech Publications, Switzerland.

关键词： Silicon carbide

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