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High-Performance Stable Hybrid Inorganic-Organic Light-Emitting

SmartMat 2025年第1期6卷 195-202页

作者： Huixue HuangI Zhagen Miao?|Haikuo Gao I Jin Cao|Yanqiong ZhengI Can Gao?|Xifeng Li|Guangcai Yuan+Huani Dong D Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghaiChina I 2Bejing National Laboratory for Molecular SciencesKey Laboratory of Organic SolidsInstitute of ChemistryChinese Academy of SciencesBejingChina I 3shandong Engineering Research Center of Aeronautical Materials and DevicesCollege of Aeronautical EngineeringShandong University of AeronauticsBinzhouChina I 4BOE Technology Group Co.Ltd.BeijingChina

Light-emitting transistors(LETs)as novel integrated optoelectronic devices demonstrate great potential applications in smart displays and visual intelligent *** construction of high-performance area-emission LETs with low power con-sumption and good reliability is urgently needed for advancing their applications,however,this integration has not been realized within a single ***,we demonstrate a kind of planar-driven hybrid LET(PDHLET)that makes use of the unique advantages of high mobility and stability of inorganic and organic semiconductors in the same *** incorporating an indium-zinc-gallium-oxide(InZnGeO)conducting layer and organic emissive layer,a high-performance stable blue-emissive PDHLET is constructed,giving a high Ion/lofr ratio approaching 6.1×10°and a low Von of 5.5 V along with maximum brightness of 1264 cd/m?as well as small Vrh shift of 0.5V after 1000s positive stress ***,a systematic simulation,including charge concentration and Langevin recombination rate,is carried out on PDHLET for the first time,demonstrating good consistency with experimental *** confirms the uniformity of high redistributed charge concentration in the InZnGeO conducting layer which thus enables good area *** study provides a new avenue for constructing high-performance stable LETs toadvancevarious field applications.

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Adjusting the SnZn defects in Cu_(2)ZnSn(S,Se)_(4) absorber layer via Ge^(4+) implanting for efficient kesterite solar cells

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Journal of Energy Chemistry 2021年第10期30卷 1-7,I0001页

作者： Yueqing Deng Zhengji Zhou Xin Zhang Lei Cao Wenhui Zhou Dongxing Kou Yafang Qi Shengjie Yuan Zhi Zheng Sixin Wu Key Lab for Special Functional Materials Ministry of EducationNational and Local Joint Engineering Research Center for High-Efficiency Display and Lighting TechnologyAnd School of MaterialsHenan UniversityKaifeng 475004HenanChina Collaborative Innovation Centre of Nano Functional Materials and Applications HenanChina Key Laboratory for Micro-Nano Energy Storage and Conversion Materials of Henan Province College of Advanced Materials and EnergyInstitute of Surface Micro and Nano MaterialsXuchang UniversityXuchang 461000HenanChina

The development of kesterite photovoltaic solar cells has been hindered by large open-circuit voltage(V_(oc))***,Snzn deep point defect and associative defect cluster have been recognized as the main culprit for the Voc ***,manipulating the deep-level donor of Snzn antisite defects is crucial for breaking through the bottleneck of present Cu_(2) ZnSn(S,Se)_(4)(CZTSSe)photovoltaic *** this study,the Snzn deep traps in CZTSSe absorber layer are suppressed by incorporation of *** energy levels and concentration of Snzn defects measured by deep-level transient spectroscopy(DLTS)decrease *** addition,the grain growth of CZTSSe films is also promoted due to Ge implantation,yielding the high quality absorber ***,the efficiency of CZTSSe solar cells increases from 9.15%to 11.48%,largely attributed to the 41 mV Voc increment.

关键词： CZTSSe Defect Absorber layer Solar cells V_(oc)

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On the accurate characterization of quantum-dot light-emitting diodes for display applications

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npj Flexible Electronics 2022年第1期6卷 351-362页

作者： Wangxiao Jin Yunzhou Deng Bingbing Guo Yaxiao Lian Baodan Zhao Dawei Di Xiaowei Sun Kai Wang Shuming Chen Yixing Yang Weiran Cao Song Chen Wenyu Ji Xuyong Yang Yuan Gao Shuangpeng Wang Huaibin Shen Jialong Zhao Lei Qian Fushan Li Yizheng Jin Key Laboratory of Excited-State Materials of Zhejiang Province State Key Laboratory of Silicon MaterialsDepartment of ChemistryZhejiang University310027 HangzhouChina State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringInternational Research Center for Advanced PhotonicsZhejiang University310027 HangzhouChina Department of Electronic and Electrical Engineering Southern University of Science and Technology518055 ShenzhenChina TCL Research ShenzhenGuangdongChina Shenzhen China Star Optoelectronics Semiconductor Display Technology Co. LtdShenzhenGuangdongChina College of Chemistry Chemical Engineering and Materials ScienceSoochow University199 Ren’ai Rd215123 SuzhouJiangsuChina Key Lab of Physics and Technology for Advanced Batteries(Ministry of Education) College of PhysicsJilin University130023 ChangchunChina Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai University149 Yanchang RoadShanghai 200072China Najing Technology Corporation Ltd Hangzhou 310052China Institute of Applied Physics and Materials Engineering University of MacaoTaipaMacaoSAR 999078China Key Laboratory for Special Functional Materials of Ministry of Education National&Local Joint Engineering Research Center for High-Efficiency Display and Lighting Technologyand Collaborative Innovation Center of Nano Functional Materials and ApplicationsHenan UniversityKaifeng 475004China School of Physical Science and Technology MOE Key Laboratory of New Processing Technology for Non-ferrous Metals and MaterialsGuangxi Key Laboratory of Processing for Non-ferrous Metals and Featured MaterialsGuangxi UniversityNanning 530004China Division of Functional Materials and Nanodevices Ningbo Institute of Materials Technology and EngineeringChinese Academy of SciencesNingbo 315201China College of Physics and Information Engineering Fuzhou UniversityFuzhou 350108China

Quantum dot light-emitting diodes(QLEDs)are a class of high-performance solution-processed electroluminescent(EL)devices highly attractive for next-generation display *** the encouraging advances in the mechanism investigation,material chemistry,and device engineering of QLEDs,the lack of standard protocols for the characterization of QLEDs may cause inaccurate measurements of device parameters and invalid comparison of different ***,we report a comprehensive study on the characterizations of QLEDs using various *** show that the emission non-uniformity across the active area,nonLambertian angular distributions of EL intensity,and discrepancies in the adopted spectral luminous efficiency functions could introduce significant errors in the device *** errors in the operational-lifetime measurements may arise from the inaccurate determination of the initial luminance and inconsistent methods for analyzing the luminance-decay ***,we suggest a set of recommended practices and a checklist for device characterizations,aiming to help the researchers in the QLED field to achieve accurate and reliable measurements.

关键词： diodes characterization luminous

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High Color Gamut Top-Emitting Organic Light-Emitting Diode Based on Metal/Transparent Conductive Oxide Composite Electrode

SSRN

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SSRN 2025年

作者： Lin, Yang Zhu, Yangyang Zhao, Ben Gu, Jialu Xu, Yachen Lan, Weixia Chen, Guo Shi, Wei Kido, Junji Wei, Bin Shanxi Datong University China School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China Nanan Institute Shanghai University Nan'an Fujian Quanzhou362300 China Frontier Center for Organic Materials Yamagata University 4-3-16 Jonan Yonezawa992-8510 Japan

Top-emitting organic light-emitting diodes (TEOLEDs) based on metal/transparent conductive oxide composite anodes, which were Al/ITO and Ag/ITO, were studied. The microcavity effect was optimized by adjusting the microcavity thickness and microcavity order to achieve high color gamut RGB monochromatic light display. Through mathematical modeling and spectral simulation, TEOLEDs with different microcavity structures were designed. The results showed that the full width at half maximum and the color purity of the light of the TEOLED based on the second-order microcavity were significantly optimized compared to those of the TEOLED based on the first-order microcavity. Meanwhile, the TEOLEDs based on the Ag/ITO composite electrode exhibited better optoelectronic performance, with the significantly enhanced external quantum efficiency of up to 19.40%, narrower full width at half maximum of down to 20 nm, and improved color purity. The corresponding red, green, and blue TEOLEDs had achieved excellent color coordinates of (0.697, 0.301), (0.154, 0.769), and (0.139, 0.050), and the color gamut area of the device had reached 172.4% of the color gamut area of the bottom-emitting OLED, 125.6% of the National Television system Committee standard color gamut, and 93.8% of the ITU-R Recommendation BT.2020 standard color gamut. © 2025, The Authors. All rights reserved.

关键词： Organic light emitting diodes (OLED)

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A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT

A Novel Monolithically Integrated Structure of GaN-based Mic...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Yuan An Kailin Ren Xueying Xiu Zebin Xu Zhuang Wu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai University Shanghai China

ISBN: (纸本)9781665495479

In this work, a novel LED-HEMT integrated device structure with a p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for the monolithic integration of GaN-based Micro-LED and its driver HEMT. This structure is a promising candidate for the optoelectronic switch in high-speed visible light communications owing to its elimination of metal-interconnects and reduction of parasitic capacitance. By TCAD simulations, the distribution of radiative recombination rate in this structure is investigated and the 2-D integrals of the radiative recombination rate for various device structure designs are compared. It is concluded that the integration structure with InGaN layers provides higher radiative recombination than that without InGaN layers. Device structure parameters are optimized, including Al content in AlGaN barrier layer, In content in InGaN layers, and thickness of InGaN layers.

关键词： Surface waves Photonic band gap Radiative recombination Switches HEMTs Wide band gap semiconductors Semiconductor process modeling

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Real-Time of Channel Temperature Monitoring of P-Gan Hemts Based on Gate Leakage Current

SSRN

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SSRN 2023年

作者： Yin, Luqiao Wu, Shuang Ren, Kailin Zhang, Wenkui Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai200444 China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200444 China

The thermal response of Lateral GaN-based High Electron Mobility Transistor is much faster than that of Si-based power devices, owing to its higher power density. This makes temperature-related effects even more critical for GaN HEMTs, highlighting the necessity of monitoring their operating temperature to improve the efficiency and reliability of power circuits. In this article, a real-time monitoring method for channel temperature of p-GaN HEMTs using gate leakage current as a medium is proposed. The dependence of gate current on temperature is demonstrated by electro-thermal TCAD simulation on the reference p-GaN HEMT structure. An improved gate driver circuit is proposed that integrates a monitoring circuit utilizing the current amplification capability of bipolar transistors and an RC integrator network. The efficiency of the proposed solution is confirmed through SPICE electrothermal simulations and experimental validation on commercially available devices. In conclusion, the implementation of the monitoring circuit has been proved effective, offering a promising pathway to improve the reliability of p-GaN HEMTs. © 2023, The Authors. All rights reserved.

关键词： High electron mobility transistors

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Detection of N-Propanol Down to Sub-Ppm Level Using P-Type Delafossite AgCrO2 Nanoparticles

SSRN

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SSRN 2022年

作者： Li, Wentao Kong, Lingwei Li, Xifeng Zhu, Wenhuan Zhang, Jianhua Liu, Hai Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University 149 Yanchang Road Shanghai200072 China Department of Micro/Nano Electronics School of Electronic Information and Electrical Engineering Shanghai Jiao Tong University Shanghai200240 China

As an important biomarker of lung cancer, n-propanol at sub-ppm level is still challenging to be detected for a simple and immediate early diagnose. In this work, a new n-propanol gas sensor with an ultralow detection limit down to 100 ppb is presented using AgCrO2 nanoparticles synthesized by a simple hydrothermal method. Compared with the congeneric CuCrO2 and commercial SnO2 , AgCrO2 exhibits prevailing performances, including a higher selectivity, dynamic response, logarithmical linearity, but lower working temperature. The first principles calculation and the energy band theoretical analysis are combined to elucidate the sensing mechanism, in which the chemical adsorption of gaseous molecules to the silver followed by the dehydrogenation on chromium on the surface of AgCrO2 is responsible to the outstanding susceptibility towards n-propanol. The proposed metal oxide semiconductor gas sensor capable of sub-ppm n-propanol detection provides a route to design and optimize the sensitive material system for the advanced trace detection of the volatile organic compounds. © 2022, The Authors. All rights reserved.

关键词： Volatile organic compounds

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Light-emitting field-effect transistors with EQE over 20%enabled by a dielectric-quantum dots-dielectric sandwich structure

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Science Bulletin 2022年第5期67卷 529-536,M0004页

作者： Lingmei Kong Jialong Wu Yunguo Li Fan Cao Feijiu Wang Qianqian Wu Piaoyang Shen Chengxi Zhang Yun Luo Lin Wang Lyudmila Turyanska Xingwei Ding Jianhua Zhang Yongbiao Zhao Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China CAS Key Laboratory of Crust-Mantle Materials and Environments School of Earth and Space SciencesUniversity of Science and Technology of ChinaHefei 230026China Henan Key Laboratory of Photovoltaic Materials Henan UniversityKaifeng 475004China Faculty of Engineering University of NottinghamNottingham NG72RDUK Center for Optoelectronic Engineering Research Department of PhysicsSchool of Physics and AstronomyYunnan UniversityKunming 650091China

Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication *** efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport ***,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich *** DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive ***,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge *** DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.

关键词： Light-emitting field-effect transistors Quantum dots Electroluminescence External quantum efficiency

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Management of Exciton Recombination Zone and Energy Loss for 4cztpn-Based Organic Light-Emitting Diodes Via Engineering Hosts

SSRN

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SSRN 2022年

作者： Tang, Zongkai Lü, Zhaoyue Zheng, Yanqiong Wang, Junling School of Physics East China University of Science & Technology Shanghai200237 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China Basic Department Army Academy of Armored Forces Beijing100072 China

The exciton recombination zone and energy loss of organic light-emitting diodes (OLEDs) with thermally activated delayed fluorescence (TADF) emitter 4CzTPN (1, 2, 4, 5-Tetrakis(carbazol-9-yl)-3, 6-dicyanobenzene) as the dopant are explored by engineering hosts. The results demonstrate that the exciton recombination zone is determined by the matching condition between hole and electron mobility of hosts. The shift of the recombination zone from cathode to anode side induces a blue-shift of the electroluminescent spectra. And energy loss can be reduced by well-matched carrier mobility and TADF feature of host as well as lower energy level offset between host and guest. Specifically, the exciplex-co-hosted device delivers the maximum current/power efficiency/external quantum efficiency of 29.06 cd·A–1/28.89 lm·W–1/8.86%, respectively, enhanced by more than 50% than the single-component-hosted devices. This study illuminates that controlling exciton recombination zone and energy loss via engineering hosts is a feasible strategy for developing high performance TADF OLEDs. © 2022, The Authors. All rights reserved.

关键词： Energy dissipation

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InP quantum dots-based electroluminescent devices

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Chinese Physics B 2019年第11期28卷 18-24页

作者： Qianqian Wu Fan Cao Lingmei Kong Xuyong Yang School of Material Science and Engineering Shanghai UniversityShanghai 200072China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China

Indium phosphide(InP) quantum dots(QDs) have shown great potential to replace the widely applied toxic cadmiumcontaining and lead perovskite QDs due to their similar emission wavelength range and emission peak width but without intrinsic toxicity. Recently, electrically driven red and green InP-based quantum-dot light-emitting diodes(QLEDs) have achieved great progress in external quantum efficiency(EQE), reaching up to 12.2% and 6.3%, respectively. Despite the relatively poor device performance comparing with cadmium selenide(CdSe)-and perovskite-based QLEDs, these encouraging facts with unique environmental friendliness and solution-processability foreshadow the enormous potential of InP-based QLEDs for energy-efficient, high-color-quality thin-film display and solid-state lighting applications. In this article, recent advances in the research of the InP-based QLEDs have been discussed, with the main focus on device structure selection and interface research, as well as our outlook for on-going strategies of high-efficiency InP-based QLEDs.

关键词： indium phosphide quantum dots light-emitting diodes external quantum efficiency

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