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Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range

Chinese Journal of Electronics 2025年第1期34卷 137-145页

作者： Yuhao Wang Sen Huang Qimeng Jiang Xinhua Wang Jie Fan Haibo Yin Ke Wei Yingkui Zheng Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences

“Ohmic-before-passivation” process was implemented on ultrathin-barrier AlGaN（<6 nm）/GaN heterostructure to further reduce the ohmic contact resistance（Rc）. In this process, alloyed Ti/Al/Ni/Au ohmic metal was formed first, followed by AlN/SiNxpassivation contributed to restore two-dimensional electron gas（2DEG） in the access region. Due to the sharp change in the concentration of 2DEG at the metal edge, a reduced transfer length consisted with lower Rcare achieved compared to that of ohmic contact on AlGaN（～20 nm）/GaN heterostructure with pre-ohmic recess process. Temperature-dependent current voltage measurements demonstrate that the carrier transport mechanism is dominated by thermionic field emission above 200 K and by field emission below 200 K. The “ohmic-before-passivation” process enables the relative stability of ohmic contacts between 50 K and 475 K and significantly improves the direct current characteristics of GaN-metal-insulator-semiconductor-high electron mobility transistor, offering a promising means for scaling down and enabling the utilization of low-voltage GaN-based power devices in extreme environmental conditions.

关键词： Resistance Low voltage Thermionic emission HEMTs Ohmic contacts Wide band gap semiconductors Transistors MODFETs Aluminum gallium nitride Thermal stability

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An AND-type 1T-FeFET array with robust write and read operations

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Science China(Information Sciences) 2025年第2期68卷 395-396页

作者： Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].

关键词： Ferroelectric devices

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A single-inductor thermoelectric, photovoltaic and vibration triplesource energy-harvesting power management system

A single-inductor thermoelectric, photovoltaic and vibration...

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2022 International Conference on Signal Processing and Communication technology, SPCT 2022

作者： Liang, Zhanrong Wei, Baolin Xu, Weilin Wei, Xuming Gui, Fadi Li, Haiou Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Guangxi Guilin541004 China

ISBN: (纸本)9781510664333

A single-inductor triple-source energy harvesting system that can harvest thermoelectric, photovoltaic and vibration energy was presented. With an integrated self-starting circuit, the system can self-supply while don't require an external battery. The hybrid modulation of pulse-frequency modulation (PFM) and pulse-width modulation (PWM) is performed to realize adaptive asynchronous control for input and output, achieving higher system stability and better energy aggregation. An adaptive maximum power point tracking (MPPT) was employed to generate inductor charging control signals with different frequencies and duty cycles according to different input sources, enabling the inductor to operate in discontinuous mode (DCM) under different input conditions. The energy harvesting system was designed in a 0.18-μm CMOS process. The simulation results show that the system can realize low-voltage self-startup as low as 200 mV and can provide a stable output of 1.4 V for the load and a 1 V harvested voltage for self-supply. The conversion efficiency of the system is 76.43%@Rload = 10 kΩ, and the average power consumption in sleep mode is 2.38 μW. © 2023 SPIE.

关键词： Energy harvesting

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Simulation of phase modulation using optical metalens for optical coherence tomography 14

Simulation of phase modulation using optical metalens for op...

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Optics in Health Care and Biomedical Optics XIV 2024

作者： Wang, Yiming Fan, Fan Ding, Xueqing Zhang, Wenchang Zhu, Jiang Key Laboratory Ministry of Education for Optoelectronic Measurement Technology and Instruments Beijing Information Science and Technology University Beijing100192 China Key Lab of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781510682122

Optical coherence tomography (OCT) has wide applications in diagnosing diseases, benefitting from its non-invasive, high-resolution, and real-time visualization of tissue microstructures. Still, this technology faces the mutual constraint between transverse resolution and depth of focus. Metalens can modulate the light fields at subwavelength scales, effectively enhancing the depth of focus of an OCT system. In this paper, a metalens designed for the OCT system is proposed. The metalens with different structures can generate various phase modulation outcomes. Using the finite-difference time-domain (FDTD) simulation, the impacts of the nanopillar parameters (e.g. height, diameter, and spacing) and the materials (e.g. Si, SiO2, and TiO2) on phase modulation have been analyzed. Based on the simulation results, the phase modulation capability of nanopillars is compromised at reduced heights, while excessively tall structures can adversely decrease transmittance. With a constant height, the radius of the nanopillars can be manipulated to achieve a phase delay of 2π. Furthermore, the propagation efficiency and the typical depth of focus were calculated from the results of the beam intensity distribution, indicating an enhanced imaging performance of the OCT system. The results provide a basis for designing the metalens used in the OCT systems. © 2024 SPIE.

关键词： Titanium dioxide

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Optical coherence tomography with enhanced depth of focus using metalens 14

Optical coherence tomography with enhanced depth of focus us...

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Optics in Health Care and Biomedical Optics XIV 2024

作者： Ding, Xueqing Fan, Fan Wang, Yiming Zhang, Wenchang Zhu, Jiang Key Laboratory Ministry of Education for Optoelectronic Measurement Technology and Instruments Beijing Information Science and Technology University Beijing100192 China Key Lab of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China

ISBN: (纸本)9781510682122

Optical coherence tomography (OCT) is widely used in ophthalmology and has been a standard method for diagnosing ocular diseases. Improving spatial resolution is crucial for the visualization of ocular microstructure. In conventional OCT systems, enhanced transverse resolution typically results in a reduction of depth of field (DOF). In our study, we designed four metalenses with different microstructures and then integrated them into the sample arm of an OCT imaging system. The metalens can modulate the amplitude and the phase of incident light in the sample. In this way, the depth of focus in the OCT system can be effectively enhanced while maintaining the transverse resolution. Also, the impact of different parameters, such as the size and the spacing of micro-units, has been discussed for OCT imaging. Finally, the experiment on the glass slides has been conducted to validate the performance of OCT imaging. The results demonstrate that the metalens with a specific microstructure could effectively enhance the DOF of OCT imaging. Furthermore, the enhanced depth of focus of the OCT system opens up new opportunities for investigating tissue morphology and function. © 2024 SPIE.

关键词： Optical coherence tomography

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HF-VHF NEMS resonators enabled by 2D semiconductor ReSe2

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Science China(Information Sciences) 2024年第10期67卷 393-394页

作者： Jie TANG Ziluo SU Shuang CAI Yalan WANG Luming WANG Jiaqi WU Jiaze QIN Jiankai ZHU Bo XU Juan XIA Zenghui WANG Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China

Two-dimensional（2D） semiconductors offer a plethora of new opportunities for constructing novel *** them, rhenium diselenide(ReSe2, crystal structure in Figure 1（a）) stands out due to its unique interlayer couplin...

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A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

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Science China(Information Sciences) 2023年第5期66卷 303-304页

作者： Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China Zhejiang Lab

The emerging non-volatile memories (NVMs), including resistive random access memory (RRAM)[1], phase-change memory (PCM)[2], and ferroelectric random access memory (Fe RAM)[3], have broad application prospects owing to their non-volatility and near-zero static energy consumption. Compared to other NVMs, ferroelectric capacitors(Fe CAPs) ofer advantages in energy consumption and endurance. However, the destructive read operation of capacitors (e.g., DRAMs and Fe CAPs) destroys the stored data.

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A Depletion-enhanced N Layers Stacked LDMOS 3

A Depletion-enhanced N Layers Stacked LDMOS

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3rd International Symposium on Semiconductor and Electronic technology, ISSET 2024

作者： Li, Qi Liang, Lanyi Guan, Li Dang, Tianbao Huang, Hong Chen, Yonghe Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Navigation Department of Guangxi Zhuang Autonomous Region Guilin541004 China

ISBN: (纸本)9798350390285

With the development of power integrated circuits, LDMOS devices assume a significant role in power device applications due to their elevated input impedance and enhanced conversion rate. Nonetheless, a contradictory relationship exists between the breakdown voltage and specific on-resistance in power LDMOS devices. Consequently, an n-layer stacked lateral double-diffused metal-oxide-semi conductor transistor(SLDMOS) is proposed, in which numerous MOS cells are stacked under the same chip area. The on-state resistance (R_on) of the n layers S-LDMOS is decreased significantly because of the vertical parallel connection, also the interference among devices is weakened through electrode interconnection isolated by oxidation layer. Multiple drift regions are formed by alternate epitaxy N-layer (drift region) and P-layer (substrate), and each drift region is depleted by the top and bottom P substrates, leading to a much lower R_on. The lightly-doped substrate and N/P top region are used to improve the breakdown characteristics, and the floating P layers are introduced to enhance the depletion effect in drift regions and decrease device thicknesses. By optimizing the configuration, a balanced trade-off is obtained. The simulation results indicate that compared with the traditional LDMOS, the 2 layers S-LDMOS exhibits a BV of 356 V and a specific on resistance (R_on,sp) of 13.56 mΩċ cm2, an improvement of 26.2 % and 71.6%, respectively. And the R_on, sp of n layers S-LDMOS will be reduced to less than 1/n of C-LDMOS further. © 2024 IEEE.

关键词： Power integrated circuits

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Back Gate Controlled Pseudo-P-Channel GaN HFET 3

Back Gate Controlled Pseudo-P-Channel GaN HFET

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3rd International Symposium on Semiconductor and Electronic technology, ISSET 2024

作者： Guan, Li Li, Qi Liang, Lanyi Wang, Lei Zhang, Xin Li, Haiou Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Application Guilin541004 China Key Laboratory of Microelectronic Devices and Integrated Circuits Education Department of Guangxi Zhuang Autonomous Region Guilin541004 China

ISBN: (纸本)9798350390285

This paper proposes a novel pseudo-p-channel AlGaN/GaN heterostructure field-effect transistor (PP-HFET). As semiconductor technology advances, GaN devices are preferred for high-power and high-frequency applications due to their high electron mobility, breakdown field, and wide bandgap. Traditional AlGaN/GaN HFETs perform well because of their high electron density and mobility in the 2DEG channel. However, conventional n-type AlGaN/GaN HFETs are limited in applications requiring p-channel devices. The PP-HFET consists of a top reference electrode and a back-gate control electrode. During operation, the top reference electrode of the PP-HET is biased negatively, rendering the device to be initially in the off state. When a negative voltage is applied to the back gate, the two-dimensional electron gas (2DEG) in the channel is regenerated owing to the compensation effect of the electric field. The more negative the back-gate voltage, the higher the ON current of the device, exhibiting the same characteristics as those of a p-channel device. The effects of the device parameters on the output and transfer characteristics are comprehensively examined, and an analytical model is presented. The simulation results illustrate that the threshold voltage of the proposed device based on the back-gate control is approximately -3.5 V, and the current density is as high as 0.1 A/mm, which is much higher than that of the conventional E-mode p-channel GaN HFET based on two-dimensional hole gas. © 2024 IEEE.

关键词： Gallium nitride

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A 20-Gb/s Low Power Inductorless TIA Design in 0.18μm CMOS 6

A 20-Gb/s Low Power Inductorless TIA Design in 0.18μm CMOS

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6th International Conference on Electronic Engineering and Informatics, EEI 2024

作者： Zeng, Zhiwei Xu, Weilin Mo, Peisi Li, Haiou Key Laboratory of Microelectronic Devices and Integrated Circuits Guilin University of Electronic Technology Education Department of Guangxi Zhuang Autonomous Region Guilin China Guilin University of Electronic Technology Guangxi Key Laboratory of Precision Navigation Technology and Applications Guilin China

ISBN: (纸本)9798350353594

The performance demands on transimpedance amplifiers (TIA) for optoelectronic conversion have increased with the rapid development of fiber optic communication technology. A modified feedforward common gate (MFCG) transimpedance amplifier with an inductor less topology is suggested for analogue front-end wireless fiber optic communications applications. This leads to a significant improvement in the circuit power consumption and band-width. An improved auxiliary amplifier without Miller effect is used instead of the traditional FCG common source amplifier to improve the bandwidth and reduce the phase jitter. An improved parallel active inductor is used instead of the traditional active inductor to obtain a more favorable bandwidth compensation effect. Small-signal analysis demonstrated that the M-FCG has a low input impedance, a large output impedance and transconductance con-version ratio. Based on a 0.18-μm CMOS process post-simulation results, the M-FCG circuit exhibits a transimpedance gain of 58.87 dBΩ, a bandwidth of 6.33 GHz, an equivalent input current noise of 27.02 pA/-VHz, a power consumption of 1.9 mW in the core circuit, and occupies a layout area of 0.0054 mm2. Additionally, the eye diagrams were generated using PRBS at a rate of 20 Gb/s. The resulting eye diagram displays openness and clarity, thereby meeting the requirement for 20 Gb/s code element transmission. © 2024 IEEE.

关键词： CMOS integrated circuits

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