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Oriented Gold Nanorod Arrays: Self‐Assembly and Optoelectronic applications

Angewandte Chemie 2019年第35期131卷

作者： Wenbo Wei Feng Bai Hongyou Fan Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology School of Materials Science and Engineering and Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 China Department of Chemical and Biological Engineering The University of New Mexico Albuquerque NM 87131 USA Advanced Materials Laboratory Sandia National Laboratories Albuquerque NM 87106 USA Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque NM 87185 USA

Self‐assembly of anisotropic plasmonic nanomaterials into ordered superstructures has become popular in nanoscience because of their unique anisotropic optical and electronic properties. Gold nanorods (GNRs) are a well‐defined functional building block for fabrication of these superstructures. They possess important anisotropic plasmonic characteristics that result from strong local electric field and are responsive to visible and near‐IR light. There are recent examples of assembling the GNRs into ordered arrays or superstructures through processes such as solvent evaporation and interfacial assembly. In this Minireview, recent progress in the development of the self‐assembled GNR arrays is described, with focus on the formation of oriented GNR arrays on substrates. key driving forces are discussed, and different strategies and self‐assembly processes of forming oriented GNR arrays are presented. The applications of the oriented GNR arrays in optoelectronic devices are also overviewed, especially surface enhanced Raman scattering (SERS).

关键词： Gold-Nanostäbchen Nanopartikel Oberflächenplasmonenresonanz Selbstorganisation SERS

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Bright hybrid white light-emitting quantum dot device with direct charge injection into quantum dot

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Chinese Physics B 2016年第12期25卷 514-519页

作者：曹进谢婧薇魏翔周洁陈超平王子兴田哲圭 Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai University School of Materials Science and Engineering Shanghai University National Engineering Laboratory of TFT-LCD Materials and Technologies Department of Electronic EngineeringShanghai Jiao Tong University School of Green Energy & Semiconductor Engineering Hoseo University

A bright white quantum dot light-emitting device （white-QLED） with 4-[4-（1-phenyl-lH-benzo[d]imidazol-2- yl）phenyl]-2- [3-（tri-phenylen-2-yl）phen-3-yl]quinazoline deposited on a thin film of mixed green/red-QDs as a bilayer emitter is fabricated. The optimized white-QLED exhibits a turn-on voltage of 3.2 V and a maximum brightness of 3660 cd/m2 @8 V with the Commission Internationale de l＇Eclairage （CIE） chromaticity in the region of white light. The ultra-thin layer of QDs is proved to be critical for the white light generation in the devices. Excitation mechanism in the white-QLEDs is investigated by the detailed analyses of electroluminescence （EL） spectral and the fluorescence lifetime of QDs. The results show that charge injection is a dominant mechanism of excitation in the white-QLED.

关键词： quantum dot light-emitting devices white ultra-thin film charge injection

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Improved Out-coupling emission of organic Light-emitting diodes by employing longitudinal wave guides

Improved Out-coupling emission of organic Light-emitting dio...

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International Conference on Material Science and Engineering（ICMSE 2016）

作者： Yang Lin Shiqi Liu Weiling Li Guo Chen Bin Wei Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University

We improved the current efficiencies of Organic Light-emitting diodes from 50 cd/A to 77.7and 65.4 cd/A by employing Ag-thin-film and Al2O3-thin-film longitudinal wave guides with the same device structures, respectively, which was attributed to the recycle use of the internal mode because the reflection of the thin-film longitude wave guides. In addition, the introduction of these wave guides exported slight influence on the spectra which was resulted from mode selection by the micro-cavity consisting of ITO and organic layers.

关键词： Improved Out-coupling emission of organic Light-emitting diodes by employing longitudinal wave guides

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Enhanced performance of ultraviolet organic light-emitting diode by using graphene oxide and MoO3 dual hole injection layer

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Physica Status Solidi (C) Current Topics in Solid State Physics 2017年第1-2期14卷 n/a-n/a页

作者： Liu, Liming You, Fengjiao Zheng, Qinghong Mo, Bingjie Zeng, Baoqing Wang, Honghang Zhang, Xiaowen Wei, Bin School of Physical Electronics University of Electronic Science and Technology of China Chengdu610054 China Guangxi Key Laboratory of Information Materials and School of Materials Science and Engineering Guilin University of Electronic Technology Guilin541004 China Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Zhongshan Institute Zhongshan528402 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China

A dual hole injection layer (d-HIL) composed of graphene oxide (GO) and transition metal oxide MoO3 is constructed and proven to be effectively promotes the radiance and external quantum efficiency (EQE) of ultraviolet organic light-emitting diode (UV OLED). The device with d-HIL behaves a maximum radiance of 4.7 mW/cm2 at 237.5 mA/cm2 and EQE of 1.36% at 3.75 mA/cm2, which have been enhanced by 27% and 19%, respectively, in comparison with the coun- terpart using conventional MoO3single HIL. The ultraviolet photoelectron spectroscopy elucidates that GO/MoO3 modification to the greatest extent enhances work function. The current-voltage characteristics and impedance spectroscopy of Hole-only devices clarify that GO/MoO3 d-HIL considerably promotes hole injection capacity. Our results indicate that the d-HIL of GO/MoO3 paves a way for constructing efficient UV OLED. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

关键词： Transition metals

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Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

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Chinese Physics B 2015年第2期24卷 253-258页

作者：张琪张浩张小文徐韬魏斌 School of Materials Science and Engineering & Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai University Guangxi Key Laboratory of Information Materials Guilin University of Electronic Technology

We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes（UV OLEDs） using different heterojunction *** is found that an energy barrier of over 0.3 eV between the emissive layer（EML） and adjacent transport layer facilitates exciplex *** electron blocking layer effectively confines electrons in the EML,which contributes to pure UV emission and enhances *** change in EML thickness generates tunable UV emission from 376 nm to 406 *** addition,the UV emission excites low-energy organic function layers and produces photoluminescent *** UV OLED,avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency.A maximum external quantum efficiency of 1.2%with a UV emission peak of 376 nm is realized.

关键词： exciplex tunable UV emission electroluminescent absorption

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Performance enhancement of merge pin schottky diode with graphene films as heat sink by ANSYS simulation

Performance enhancement of merge pin schottky diode with gra...

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China International Forum on Solid State Lighting (SSLCHINA)

作者： Piaopiao He Zhangfu Chen Lianqiao Yang Jianhua Zhang Luqiao Yin Tingting Nan School of Material Science and Engineering Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Ministry of Education Zhabei Shanghai China

ISBN: (纸本)9781509056125

In this paper, we simulate graphene on the surface of substrate, using interconnection metallization to connect merge pin schottky (MPS) power diode chip and substrate, then build a thermal model of the device, and perform the finite-element analysis with ANSYS software. In recent years, graphene has attracted a large amount of interest because of its outstanding electric conductivity, ultrahigh thermal conductivity and large specific surface area. Therefore, if graphene films are used as heat sink, heat will diffuse through graphene surface at breakneck speeds, solving the heat accumulation problem of the device. In this work, we simulate the heat dissipation effect of the device with graphene films or without graphene films. Then, we change the thickness of graphene films, contact area between graphene films and heat dissipation substrate, and contact area between interconnection metallization and graphene films.

关键词： Graphene Heating Conductivity Thermal conductivity Films Heat sinks Substrates

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Numerical differentiation of noisy data with local optimum by data segmentation

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Journal of systems Engineering and Electronics 2015年第4期26卷 868-876页

作者： Jianhua Zhang Xiufu Que Wei Chen Yuanhao Huang Lianqiao Yang Key Laboratory of Advanced Display and System Applications (Shanghai University) Ministry of Education School of Mechanical & Electronic Engineering and Automation Shanghai University

A new numerical differentiation method with local opti- mum by data segmentation is proposed. The segmentation of data is based on the second derivatives computed by a Fourier devel- opment method. A filtering process is used to achieve acceptable segmentation. Numerical results are presented by using the data segmentation method, compared with the regularization method. For further investigation, the proposed algorithm is applied to the resistance capacitance （RC） networks identification problem, and improvements of the result are obtained by using this algorithm.

关键词： numerical differentiation noisy data local optimum,data segmentation.

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LEDs: High‐Efficiency and Stable Quantum Dot Light‐Emitting Diodes Enabled by a Solution‐Processed Metal‐Doped Nickel Oxide Hole Injection Interfacial Layer (Adv. Funct. Mater. 42/2017)

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advanced Functional Materials 2017年第42期27卷

作者： Fan Cao Haoran Wang Piaoyang Shen Xiaomin Li Yanqiong Zheng Yuequn Shang Jianhua Zhang Zhijun Ning Xuyong Yang Key Laboratory of Advanced Display and System Applications Education of Ministry Shanghai University 149 Yanchang Road 200072 China School of Physical Science and Technology ShanghaiTech University 393 Middle Huaxia Road Pudong Shanghai 201210 China

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Hole transporting material 5,10,15-tribenzyl-5Hdiindolo[3,2-a:3',2'-c]-carbazole for efficient optoelectronic applications as an active layer

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Chinese Physics B 2015年第2期24卷 428-431页

作者：郑燕琼 William J.Potscavage Jr 张建华魏斌黄荣娟 Key Laboratory of Advanced Display and System Applications Ministry of EducationShanghai University Center for Organic Photonics and Electronics Research(OPERA) and International Institute for Carbon Neutral Energy Research(WPI-I2CNER) Kyushu University

In order to explore the novel application of the transparent hole-transporting material 5,10,15-tribenzyl-5Hdiindolo[3,2-a：3＇,2＇-c]-carbazole（TBDI）,in this article TBDI is used as an active layer but not a buffer layer in a photodetector（PD）,organic light-emitting diode（OLED）,and organic photovoltaic cell（OPV） for the first ***,the absorption and emission spectra of a blend layer comprised of TBDI and electron-transporting material bis-（2-methyl-8-quinolinate） 4-phenylphenolate（BAlq） are *** on the absorption properties,an organic PD with a peak absorption at 320 nm is fabricated,and a relatively-high detectivity of 2.44×10^（11） cm· Hz^（1/2）/W under 320-nm illumination is *** TBDI/tris（8-hydroxyquinoline） aluminum（Alq_3） OLED device exhibits a comparable external quantum efficiency and current efficiency to a traditional 4,4-bis[N-（l-naphthyl）-N-phenyl-amino]biphenyl（α-NPD）/Alq_3 OLED.A C_（70）-based Schottky junction with 5 wt%-TBDI yields a power conversion efficiency of 5.0%,which is much higher than 1.7%for an α-NPD-based junction in the same *** results suggest that TBDI has some promising properties which are in favor of the hole-transporting in Schottky junctions with a low-concentration donor.

关键词： 5 10 15-tribenzyl-5H-diindolo[3 2-a：3＇ 2＇-c]-carbazole photodetector organic light-emitting diode Schottky junction

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An analysis on damage of light-emitting diodes reliability induced by electronic static discharge

An analysis on damage of light-emitting diodes reliability i...

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International Conference on Electronic Packaging Technology

作者： Tingting Nan Piaopiao He Luqiao Yin Jianhua Zhang School of Materials Science and Engineering Shanghai University Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education

ISBN: (纸本)9781509013975

The influence of different degrees of high reverse-bias stress on high power light-emitting diodes (LEDs) was investigated based on the aging of LED devices under the stress of 85℃/85% RH. GaN-based blue LEDs were respectively tested by negative Human-Body-Mode (HBM) electronic static discharge (ESD) at -1000 V, -2000 V, -3000 V, -4000 V and -5000 V. The electrical performances and optical performances of samples were measured before and after ESD test. The LEDs stressed at -1000 V, -2000 V and -3000 V showed a soft breakdown due to the generation of defect inside the chip and LEDs stressed at -4000V and -5000V showed a thermal breakdown. The thermal breakdown made temperature rise rapidly and formed a melting channel, which caused the damage of the LED. Though the electrical performances and optical performances of LEDs stressed at -1000 V, -2000 V and -3000 V did not show conspicuous degradation, the damage induced by ESD affect the reliability of LEDs.

关键词： LED ESD Aging Reliability

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