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Research progress and prospects of experimental murine behavior evaluation methods

Medicine in Novel technology and devices 2025年

作者： Chen Du Ying Wang Ziyi Li Ziyan Wu Dingyuan Liang Yuliang Zhao Jin Zhou Yubo Fan Key Laboratory of Biomechanics and Mechanobiology (Beihang University) Ministry of Education Key Laboratory of Innovation and Transformation of Advanced Medical Devices Ministry of Industry and Information Technology National Medical Innovation Platform for Industry-Education Integration in Advanced Medical Devices (Interdiscipline of Medicine and Engineering) School of Biological Science and Medical Engineering Beihang University 100191 Beijing China Department of Mechanical Engineering City University of Hong Kong 999077 Hong Kong SAR China School of Control Engineering Northeastern University at Qinhuangdao Qinhuangdao 066004 Hebei China

Experimental murine behaviors, including communication, emotional expression, social interaction, learning, and reproduction, play a critical role in various research fields such as genetics, neuroscience, and non-neuroscience disciplines. The growing demand for murine behavior research has driven the development of diverse evaluation methods. Current evaluation techniques include assessments based on ordinary or high-speed cameras, active depth sensors, inertial sensors, optical pressure plates, electromyography, and two-photon fluorescence microscopy. Each method has its unique advantages and limitations depending on the experimental context. Therefore, selecting an appropriate evaluation method tailored to specific experimental requirements is crucial for obtaining accurate and meaningful results. This review summarizes the advancements in experimental murine behavior evaluation methods over the past decade, providing a comprehensive overview of their applications and contributions to behavioral research.

关键词： murine behaviors behavioral tracking behavior evaluation method technological advancements

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Corrigendum to “Tailorable fragile-to-strong kinetics features of metal oxides nanocomposite phase-change antimony films” [Acta Mater. 234 (2022) 118013]

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Acta Materialia 2022年 237卷

作者： Kexin Peng Yimin Chen Wenhao Leng Guoxiang Wang Chenjie Gu Yixiao Gao Jun-Qiang Wang Xiang Shen Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang Province Advanced Technology Research Institute Ningbo University Ningbo 315211 China Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo 315211 China Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province Ningbo University Ningbo 315211 China CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology Ningbo Institute of Materials Technology & Engineering Chinese Academy of Sciences Ningbo 315201 China

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Robust data analysis and imaging with computational ghost imaging

arXiv

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arXiv 2021年

作者： Liu, Jiangtao Cai, Xunming Huang, Jinbao Luo, Kun Li, Hongxu Li, Weimin Zhang, Dejian Wu, Zhenhua College of Mechanical and Electrical Engineering Guizhou Minzu University Guiyang550025 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Guizhou Light Industry Technical College Guiyang550025 China Nanchang University Department of Physics Nanchang China University of CAS Beijing100049 China

Nowadays the world has entered into the digital age, in which the data analysis and visualization have become more and more important. In analogy to imaging the real object, we demonstrate that the computational ghost imaging can image the digital data to show their characteristics, such as periodicity. Furthermore, our experimental results show that the use of optical imaging methods to analyse data exhibits unique advantages, especially in anti-interference. The data analysis with computational ghost imaging can be well performed against strong noise, random amplitude and phase changes in the binarized signals. Such robust data data analysis and imaging has an important application prospect in big data analysis, meteorology, astronomy, economics and many other fields. © 2021, CC BY.

关键词： Data handling

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Cover Image, Volume 7, Number 2, February 2025

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Carbon Energy 2025年第2期7卷

作者： Changding Wang Yingfang Li Sida Zhang Tian-Yi Sang Yu Lei Ruiqi Liu Fu Wan Yuejiao Chen Weigen Chen Yujie Zheng Shuhui Sun State Key Laboratory of Power Transmission Equipment Technology School of Electrical Engineering National Innovation Center for Industry-Education Integration of Energy Storage Technology Chongqing University Chongqing China Institute National de la Recherche Scientifique (INRS) Centre Énergie Matériaux Télécommunications Varennes Québec Canada MOE Key Laboratory of Low-grade Energy Utilization Technologies and Systems CQU-NUS Renewable Energy Materials & Devices Joint Laboratory School of Energy & Power Engineering Chongqing University Chongqing China State Key Laboratory of Powder Metallurgy Central South University Changsha China

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All-Linear Multistate Magnetic Switching Induced by Electrical Current

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Physical Review Applied 2021年第5期15卷 054013-054013页

作者： Meiyin Yang Yanru Li Jun Luo Yongcheng Deng Nan Zhang Xueying Zhang Shaoxin Li Yan Cui Peiyue Yu Tengzhi Yang Yu Sheng Sumei Wang Jing Xu Chao Zhao Kaiyou Wang Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences (IMECAS) Beijing 100029 China University of Chinese Academy of Sciences (UCAS) Beijing 100049 China SKLSM Institute of Semiconductors CAS P.O. Box 912 Beijing 100083 China Beihang-Goertek Joint Microelectronics Institute Qingdao Research Institute Beihang University Qingdao 266101 China Beijing Academy of Quantum Information Sciences Beijing 100193 China

We present an alternative mechanism to control domain wall motion, whose directions are manipulated by the amplitude of electrical current rather than its sign when modulating the exchange stiffness A while maintaining the Dzyaloshinskii-Moriya interaction constant D. To confirm this mechanism, we observe this type of domain wall motion and demonstrate linear magnetic switching without hysteresis effect via adjusting A of a Ta/Pt/Co/Ta multilayer device with ion implantations. We further find field-free biased and chirally controllable multistate switching at the lateral interface of ion exposed and unexposed areas, which is due to current-induced Néel wall motion and a strong exchange coupling at this interface.

关键词： Domain walls Magnetic interactions Magnetization switching Spin torque Surface & interfacial phenomena Magnetic multilayers Magnetization measurements Micromagnetic modeling

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Quantum capacitance impact on low-frequency noise in MoS2 transistors

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Physical Review Applied 2025年第5期23卷 054012-054012页

作者： Long Chen Zheyi Lu Yu Song Runtong Guo Hongfu Li Jean-Pierre Raskin Denis Flandre Yuan Liu Lei Liao Guoli Li Key Laboratory for Micro/Nano-Optoelectronic Devices of Ministry of Education School of Physics and Electronics Hunan University Changsha 410082 China Research Institute of Hunan University in Chongqing Chongqing 401135 China Institute of Information and Communication Technologies Electronics and Applied Mathematics Université catholique de Louvain Louvain-la-Neuve 1348 Belgium National Key Laboratory of Power Semiconductor and Integration Technology Engineering Research Center of Advanced Semiconductor Technology and Application of Ministry of Education College of Semiconductors (College of Integrated Circuits) Hunan University Changsha 410082 China

Low-frequency noise (LFN) is a critical figure of merit for characterizing the performance and application limits of electronic devices and circuits. In two-dimensional (2D) material-based transistors, their higher amplitudes of LFN than those of silicon counterparts are generally attributed to the atomically thin body, which is more susceptible to interfacial scattering. However, with advancing miniaturization of 2D transistors, the quantum capacitance (Cq) arising from the confined density of states of the ultrathin channel can impose limitations on electrical performance and inevitably influence the LFN behavior. Herein, to elucidate the fundamental physics of how quantum capacitance impacts LFN, we present a comprehensive study of the LFN characteristics in MoS2 field-effect transistors (FETs). It is found that Cq significantly limits transconductance and carrier density, thereby affecting the LFN performance. For monolayer devices, the drain current fluctuations can be explained by the carrier number fluctuation featuring correlated surface mobility fluctuation, and the normalized noise amplitude (SI/Ids2) becomes effectively suppressed in the subthreshold region while enhanced in accumulation because of the influence of Cq on transconductance efficiency. On the other hand, the LFN characteristics inside multilayer transistors follow Hooge’s mobility fluctuation model and are impacted by Cq mainly in strong accumulation. In this regime, Cq leads to an increment of SI/Ids2 due to the restrained carrier density in semiconductor channels. Our findings provide unique insight into quantum capacitance effects on LFN characteristics in 2D FETs, and can facilitate their device design, performance optimization, and electronic applications.

关键词： Layered semiconductors

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A Novel Self-Aligned Dopant-Segregated Schottky Tunnel-FET with Asymmetry Sidewall Based on Standard CMOS technology

A Novel Self-Aligned Dopant-Segregated Schottky Tunnel-FET w...

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International Conference on Solid-State and Integrated Circuit technology

作者： Yiqing Li Qianqian Huang Mengxuan Yang Ting Li Zhixuan Wang Weihai Bu Jin Kang Wenbo Wang Shengdong Zhang Ru Huang School of Electronic and Computer Engineering Peking University Shenzhen China Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Semiconductor Technology Innovation Center (Beijing) Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

A novel Si-based tunnel field effect transistor (TFET) with self-aligned dopant-segregated Schottky (DSS) source and underlap-drain is proposed and manufactured based on standard CMOS process. Asymmetric sidewall structures are introduced and manufactured for the process of self-aligned DSS source/drain. In the proposed device, DSS structure is able to optimize the source junction of devices without introducing ambipolar effect. The fabricated device improves the on-current by about two orders of magnitude compared with the conventional TFET without DSS structure, and suppress the ambipolar current over two orders of magnitude compared with the DSS-TFET without asymmetric sidewall structures. The experimental results demonstrate the great potential of the device for ultra-low power IOT applications.

关键词： TFETs Silicides Standards Internet of Things Logic gates CMOS process Junctions

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Oxygen deficient Eu 2 O 3- δ synchronizes the shielding and catalytic conversion of polysulfides toward high-performance lithium sulfur batteries

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Chinese Chemical Letters 2024年

作者： Ming Xu Teng Deng Chenzhaosha Li Hongyang Zhao Juan Wang Yatao Liu Jianan Wang Guodong Feng Na Li Shujiang Ding Kai Xi School of Chemistry Engineering Research Center of Energy Storage Materials and Devices Ministry of Education National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology State Key Laboratory for Electrical Insulation and Power Equipment Engineering Research center of Energy Storage Material and Chemistry Universities of Shaanxi Province Xi'an Jiaotong University Xi'an 710049 China School of Mechanical & Electrical Engineering Xi'an Key Laboratory of Clean Energy Shaanxi Key Laboratory of Nanomaterials and Nanotechnology Xi'an University of Architecture and Technology Xi'an 710055 China State Key Laboratory of Organic-Inorganic Composites College of Chemical Engineering Beijing University of Chemical Technology Beijing 100029 China Department of Environmental Science and Engineering School of Energy and Power Engineering Xi'an Jiaotong University Xi'an 710049 China

Lithium-sulfur batteries (LSBs) are promising energy storage systems due to their low cost and high energy density. However, sluggish reaction kinetics and the “shuttle effect” of lithium polysulfides (LiPSs) from sulfur cathode hinder the practical application of LSBs. In this work, a separator loaded with the Eu 2 O 3- δ nanoparticles/carbon nanotube interlayer is designed to immobilize LiPSs and catalyze their conversion reaction. The oxygen-deficient Eu 2 O 3- δ nanoparticles, with abundant catalytic sites, promote LiPSs conversion kinetics even at high current densities. Moreover, the unique 4f electronic structure of Eu 2 O 3- δ effectively mitigates undesired sulfur cathode crossover, significantly enhancing the cycling performance of LSBs. Specifically, a high capacity of 620.7 mAh/g at a rate of 5 C is achieved, maintaining at 545 mAh/g after 300 cycles at 1 C. This work demonstrates the potential application of rare earth catalysts in LSBs, offering new research avenues for promoting dynamic conversion design in electrocatalysts.

关键词： Rare earth catalysts Interlayer structure Shuttle effect Mitigation Lithium-sulfur batteries

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A Novel Electrical Isolation Solution for Tunnel FET integration

A Novel Electrical Isolation Solution for Tunnel FET Integra...

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China Semiconductor technology International Conference (CSTIC)

作者： Ting Li Qianqian Huang Le Ye Yuan Zhong Mengxuan Yang Yiqing Li Yimei Li Zhongxin Liang Ru Huang School of Electronic Information Engineering Anhui University Hefei China Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Peking University Information Technology Institute (Tianjin Binhai)

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, for bulk tunnel field-effect transistors (TFET), the electrical isolation solutions between neighboring devices for TFET integration are investigated. To suppress the leakage current of the P-type doped regions through the P-type substrate, a new effective isolation method is proposed and verified via simulation. The simulation shows the leakage current can be reduced from 10 -5 A/μm to 10 -13 A/μm. The solution is beneficial for TFETs to keep its advantages for ultra-low power applications such as implantable medical devices and Internet of Things.

关键词： TFETs Medical devices Leakage currents Low-power electronics Internet of Things Substrates

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Self-Adaptive Radiative Cooler for Maximizing Year-Round Energy Saving of households

Self-Adaptive Radiative Cooler for Maximizing Year-Round Ene...

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Conference on Lasers and Electro-Optics (CLEO)

作者： Jiachen Li Kechao Tang Kaichen Dong Madeleine P. Gordon Finnegan G. Reichertz Hyungjin Kim Yoonsoo Rho Qingjun Wang Chang-Yu Lin Costas P. Grigoropoulos Ali Javey Jeffrey J. Urban Jie Yao Ronnen Levinson Junqiao Wu Division of Materials Sciences Lawrence Berkeley National Laboratory Berkeley CA USA Applied Science and Technology Graduate Group University of California Berkeley CA USA Department of Materials Science and Engineering University of California Berkeley CA USA Key Laboratory of Microelectronic Devices and Circuits (MOE) School of Integrated Circuits Peking University Beijing P. R. China The Molecular Foundry Lawrence Berkeley National Laboratory Berkeley CA USA East Bay Innovation Academy Oakland CA USA Department of Electrical Engineering and Computer Sciences University of California Berkeley CA USA Department of Mechanical Engineering University of California Berkeley CA USA Lawrence Berkeley National Laboratory Heat Island Group Berkeley CA USA

We present an approach to household thermal regulation and energy saving from an all-season perspective by developing a mechanically flexible and energy-free coating that automatically adapts its thermal emittance to ... 详细信息

ISBN: (数字)9781957171050

ISBN: (纸本)9781665466660

关键词： Space vehicles Energy consumption Electric potential Regulation Coatings Laser transitions Laser beam cutting

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