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检索条件"机构=Key Laboratory Microelectronic Devices and Integration Technology"
共 430 条 记 录，以下是331-340 订阅
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Simulation of doping effect for HfOi-based RRAM based on first-principles calculations
Simulation of doping effect for HfOi-based RRAM based on fir...
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2017 International Conference on Simulation of Semiconductor Processes and devices, SISPAD 2017
作者： Wei, Wei Chuai, Xichen Lu, Nianduan Wang, Yan Li, Ling Ye, Cong Liu, Ming Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China Hubei University Wuhan430062 China University of Chinese Academy of Sciences Beijing100049 China
A physical model of revealing the charge carrier transport characteristics based on first-principles calculations has been proposed for oxide-based RRAM. Based on the proposed model, we have investigated the influence... 详细信息
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Steep switch with hybrid operation mechanism for performance improvement (invited)
Steep switch with hybrid operation mechanism for performance...
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Berkeley Symposium on Energy Efficient Electronic Systems (E3S)
作者： Ru Huang Qianqian Huang Yang Zhao Cheng Chen Rundong Jia Lingyi Guo Yangyuan Wang Key Laboratory of Microelectronic Devices and Circuits (MOE) National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China
Tunnel FET (TFET) has attracted much attention as one of promising candidates of MOSFET for low power applications due to its capability of sub-60mV/dec subthreshold slope (SS) at room temperature [1]. It has a gated ... 详细信息
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Author Correction: How to report and benchmark emerging field-effect transistors
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Nature Electronics 2022年 620页
作者： Zhihui Cheng Son T. Le Curt A. Richter Chin-Sheng Pang Zhihong Chen Joerg Appenzeller Peiqi Wang Xiangfeng Duan Yanqing Wu Davood Shahrjerdi Iuliana Radu Max C. Lemme Lian-Mao Peng Steven J. Koester Eric Pop Aaron D. Franklin Nanoscale Device Characterization Division National Institute of Standards and Technology Gaithersburg MD USA Department of Electrical and Computer Engineering Purdue University West Lafayette IN USA Theiss Research La Jolla CA USA Department of Chemistry and Biochemistry University of California Los Angeles Los Angeles CA USA School of Integrated Circuits Peking University Beijing China Electrical and Computer Engineering New York University Brooklyn NY USA Center for Quantum Phenomena Physics Department New York University New York NY USA IMEC Leuven Belgium RWTH Aachen University Chair of Electronic Devices Aachen Germany AMO GmbH Advanced Microelectronic Center Aachen Aachen Germany Key Laboratory for the Physics and Chemistry of Nanodevices and Center for Carbon-based Electronics Department of Electronics Peking University Beijing China Department of Electrical and Computer Engineering University of Minnesota Minneapolis MN USA Department of Electrical Engineering Stanford University Stanford CA USA Department of Electrical and Computer Engineering Duke University Durham NC USA Department of Chemistry Duke University Durham NC USA
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Design guidelines of stochastic computing based on FinFET: A technology-circuit perspective
Design guidelines of stochastic computing based on FinFET: A...
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International Electron devices Meeting (IEDM)
作者： Yawen Zhang Runsheng Wang Xiaobo Jiang Zhenghan Lin Shaofeng Guo Zhe Zhang Zherui Zhang Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China
Stochastic computing (SC) is a promising alternative to conventional deterministic computing, which enables ultralow power, high error-tolerance and massive parallelism, but not requiring new devices. In this paper, t... 详细信息
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Variability-and reliability-aware design for 16/14nm and beyond technology
Variability-and reliability-aware design for 16/14nm and bey...
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International Electron devices Meeting (IEDM)
作者： R. Huang X. B. Jiang S. F. Guo P. P. Ren P. Hao Z. Q. Yu Z. Zhang Y. Y. Wang R. S. Wang Key Laboratory of Microelectronic Devices and Circuits (MOE) Peking University Beijing China National Key Laboratory of Science and Technology on Micro/Nano Fabrication Beijing China
Device variability and reliability are becoming increasingly important for nano-CMOS technology and circuits, due to the shrinking circuit design margin with the downscaling supply voltage (V dd ). Therefore, robust d... 详细信息
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Investigation of current collapse mechanism of LPCVD Si3N4 passivated AlGaN/GaN HEMTs by fast soft-switched current-DLTS and CC-DLTFS
Investigation of current collapse mechanism of LPCVD Si3N4 p...
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International Symposium on Power Semiconductor devices and Ics (ISPSD)
作者： Xinhua Wang Xuanwu Kang Jinhan Zhang Ke Wei Sen Huang Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China
In this work, we investigated the current collapse mechanism of AlGaN/GaN high-electron mobility transistors (HEMTs) with LPCVD Si 3 N 4 passivation. With newly developed fast soft-switched current-DLTS techniques, w...
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Data Storage: Self‐Assembled Networked PbS Distribution Quantum Dots for Resistive Switching and Artificial Synapse Performance Boost of Memristors (Adv. Mater. 7/2019)
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Advanced Materials 2019年 第7期31卷
作者： Xiaobing Yan Yifei Pei Huawei Chen Jianhui Zhao Zhenyu Zhou Hong Wang Lei Zhang Jingjuan Wang Xiaoyan Li Cuiya Qin Gong Wang Zuoao Xiao Qianlong Zhao Kaiyang Wang Hui Li Deliang Ren Qi Liu Hao Zhou Jingsheng Chen Peng Zhou National‐Local Joint Engineering Laboratory of New Energy Photovoltaic Devices Key Laboratory of Digital Medical Engineering of Hebei Province College of Electron and Information Engineering Hebei University Baoding 071002 P. R. China Department of Materials Science and Engineering National University of Singapore Singapore 117576 Singapore State Key Laboratory of ASIC and System School of Microelectronics Fudan University Shanghai 200433 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Giantec Semiconductor Inc. Shanghai 201203 China
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Highly improved resistive switching performances of the self-doped Pt/HfO_2:Cu/Cu devices by atomic layer deposition
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Science China(Physics,Mechanics & Astronomy) 2016年 第12期59卷 72-77页
作者： Sen Liu Wei Wang QingJiang Li XiaoLong Zhao Nan Li Hui Xu Qi Liu Ming Liu College of Electronic Science and Engineering National University of Defense Technology Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion Beam Application Wuhan University
Metal-oxide electrochemical metallization (ECM) memory is a promising candidate for the next generation nonvolatile *** this memory suffers from large dispersion of resistive switching parameters due to the intrinsic ... 详细信息
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Leakage Current Analysis Using High Resistivity Silicon Gated Diodes For PIN Detectors Application  13
Leakage Current Analysis Using High Resistivity Silicon Gate...
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2016 13th IEEE International Conference on Solid-State and Integrated Circuit technology (ICSICT)
作者： Hao Wang Min Yu Baohua Shi Yahuan Huang Xinyang Zhao Yufeng Jin National Key Laboratory of Nano/Micro Fabrication Technology Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of Microelectronics Peking University
Ultra-thick and ultra-thin Silicon PIN detectors are specially applied in high particles detections. The corresponding leakage current is investigated. The ultra-thick and ultra-thin gated diodes structures based on h... 详细信息
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Nonvolatile Memory: Performance‐Enhancing Selector via Symmetrical Multilayer Design (Adv. Funct. Mater. 13/2019)
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Advanced Functional Materials 2019年 第13期29卷
作者： Yiming Sun Xiaolong Zhao Cheng Song Kun Xu Yue Xi Jun Yin Ziyu Wang Xiaofeng Zhou Xianzhe Chen Guoyi Shi Hangbing Lv Qi Liu Fei Zeng Xiaoyan Zhong Huaqiang Wu Ming Liu Feng Pan Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 P. R. China National Center for Electron Microscopy in Beijing Key Laboratory of Advanced Materials (MOE) State Key Laboratory of New Ceramics and Fine Processing School of Materials Science and Engineering Tsinghua University Beijing 100084 P. R. China Institute of Microelectronics Tsinghua University Beijing 100084 P. R. China
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