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Ultrafast nonlinear absorption and nonlinear refraction in few-layer oxidized black phosphorus

Photonics Research 2016年第6期4卷 286-292页

作者： Shunbin Lu Yanqi Ge Zhengbo Sun Zongyu Huang Rui Cao Chujun Zhao Shuangchun Wen Dianyuan Fan Jianqing Li Han Zhang SZU-NUS Collaborative Innovation Centre for Optoelectronic Science & Technology and Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Optoelectronic Engineering Shenzhen University Faculty of Information Technology Macao University of Science and Technology Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education College of Physics and Microelectronic Science Hunan University

We experimentally investigated the nonlinear optical response in few-layer oxidized black phosphorus(OBP) by the femtosecond Z-scan measurement technique, and found that OBP not only possesses strong ultrafast saturable absorption but also a nonlinear self-defocusing effect that is absent in black phosphorus(BP). The saturable absorption property originates mainly from the direct band structure, which is still maintained in OBP. The emergence of self-defocusing might originate from the combined consequences of the oxygen-induced defects in BP. Our experimental findings might constitute the first experimental evidence on how to dynamically tune its nonlinear property, offering an inroad in tailoring its optical properties through chemical modification(oxidation, introducing defects, etc.). The versatile ultrafast nonlinear optical properties(saturable absorption and self-defocusing) imply a significant potential of the layered OBP in the development of unprecedented optoelectronic devices, such as mode lockers, optical switches, laser beam shapers, and wavelength converters.

关键词： OBP Ultrafast nonlinear absorption and nonlinear refraction in few-layer oxidized black phosphorus

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Aharonov-Bohm effect in monolayer black phosphorus (phosphorene) nanorings

arXiv

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arXiv 2017年

作者： Zhang, Rui Wu, Zhenhua Li, X.J. Chang, Kai SKLSM Institute of Semiconductors Chinese Academy of Sciences Beijing100083 China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing100049 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China College of Physics and Energy Fujian Normal University Fuzhou350007 China

This work presents theoretical demonstration of Aharonov-Bohm (AB) effect in monolayer phosphorene nanorings (PNR). Atomistic quantum transport simulations of PNR are employed to investigate the impact of multiple modulation sources on the sample conductance. In presence of a perpendicular magnetic field, we find that the conductance of both armchair and zigzag PNR oscillate periodically in a low-energy window as a manifestation of the AB effect. Our numerical results have revealed a giant magnetoresistance (MR) in zigzag PNR (with a maximum magnitude approaching two thousand percent). It is attributed to the AB effect induced destructive interference phase in a wide energy range below the bottom of the second subband. We also demonstrate that PNR conductance is highly anisotropic, offering an additional way to modulate MR. The giant MR in PNR is maintained at room temperature in the presence of thermal broadening effect. Copyright © 2017, The Authors. All rights reserved.

关键词： Nanostructured materials

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Thermal effect and compact model in three-dimensional (3D) RRAM arrays

Thermal effect and compact model in three-dimensional (3D) R...

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International Conference on Simulation of Semiconductor Processes and devices (SISPAD)

作者： N. D. Lu Z. W. Zong P. X. Sun L. Li Q. Liu H. B. Lv S. B. Long M. Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing China

A physical and electro-thermal Compact model for thermal effect and crosstalk in 3D RRAM arrays has been firstly proposed. The simulation results show that the transient thermal effect will dominate reset process. The proposed model is based on 3D Fourier heat flow equation and electro-thermal analogy which can couple thermal network to its electrical schematic. The comparison between the Compact model simulation results and numerical simulation shows a good accuracy. The proposed electro-thermal model then was written in Verilog-A by using Spectre on Cadence platform and had been verified by using ANSYS software.

关键词： Three-dimensional displays Semiconductor process modeling Heating Solid modeling Numerical models Thermal analysis Mathematical model

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Memristors: Memristor with Ag‐Cluster‐Doped TiO2Films as Artificial Synapse for Neuroinspired Computing (Adv. Funct. Mater. 1/2018)

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Advanced Functional Materials 2018年第1期28卷

作者： Xiaobing Yan Jianhui Zhao Sen Liu Zhenyu Zhou Qi Liu Jingsheng Chen Xiang Yang Liu Key Laboratory of Optoelectronic Information Materials of Hebei Province Key Laboratory of Digital Medical Engineering of Hebei Province College of Electron and Information Engineering Hebei University Baoding 071002 P. R. China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 P. R. China Department of Materials Science and Engineering National University of Singapore 9 Engineering Drive 1 Singapore 117575 Singapore Department of Physics National University of Singapore 2 Science Drive 3 Singapore 117542 Singapore

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Greatly enhanced light emission of MoS2 using photonic crystal heterojunction

arXiv

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arXiv 2017年

作者： Jiang-Tao, Liu Hong, Tong Zhen-Hua, Wu Jin-Bao, Huang Yun-Song, Zhou College of Mechanical and electrical engineering Guizhou Minzu University Guiyang550025 China Department of Physics Nanchang University Nanchang330031 China Institute for Advanced Study Nanchang University Nanchang330031 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelec- tronics Chinese Academy of Sciences Beijing100029 China Department of Physics Capital Normal University Beijing100037 China

We study the effect of one-dimensional (1D) photonic crystal heterojunction (h-PhC) on the light absorption and light emission of monolayer molybdenum disulfide (MoS2), and obtained the analytical solution of the light absorption and emission of two-dimensional materials in 1D h-PhC. Simultaneously enhancing the light absorption and emission of the medium in multiple frequency ranges is easy as h-PhC has more models of photon localization than the common photonic crystal. Result shows that h-PhC can simultaneously enhance the light absorption and emission of MoS2 and enhance the photoluminescence spectrum of MoS2 by 2-3 orders of magnitude. Copyright © 2017, The Authors. All rights reserved.

关键词： Molybdenum compounds

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Tuning the dzyaloshinskii−moriya interaction in pt/co/mgo heterostructures through mgo thickness

arXiv

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arXiv 2017年

作者： Cao, Anni Zhang, Xueying Koopmans, Bert Peng, Shouzhong Zhang, Yu Wang, Zilu Yan, Shaohua Yang, Hongxin Zhao, Weisheng Fert Beijing Institute BDBC School of Electronic and Information Engineering Beihang University Beijing China Centre for Nanoscience and Nanotechnology University Paris-Saclay Orsay France Beihang-Goertek Joint Microelectronics Institute Qingdao Research Institute Beihang University Qingdao China Department of Applied Physics Institute for Photonic Integration Eindhoven University of Technology Eindhoven Netherlands Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo Zhejiang China

The interfacial Dzyaloshinskii−Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures, has attracted a lot of attention thanks to its capability to stabilize Néel-type domain walls (DWs) and magnetic skyrmions for the realization of non-volatile memory and logic devices. In this study, we demonstrate that magnetic properties in perpendicularly magnetized Ta/Pt/Co/MgO/Pt heterostructures, such as magnetization and DMI, can be significantly influenced by the MgO thickness. To avoid the excessive oxidation of Co, an ultrathin Mg layer is inserted to improve the quality of Co-MgO interface. By using field-driven domain wall expansion in the creep regime, we find that non-monotonic tendencies of the DMI field appear when changing the thickness of MgO. With the insertion of a monatomic Mg layer, the strength of DMI could reach a high level and saturates. We conjecture that the efficient control of DMI is a result of subtle changes of both Pt/Co and Co/MgO interfaces, which provides a method to optimize the design of ultrathin structures achieving skyrmion electronics. Copyright © 2017, The Authors. All rights reserved.

关键词： Domain walls

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Resistive Switching: Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching devices Utilizing Graphene with Controlled Defects (Adv. Mater. 14/2018)

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Advanced Materials 2018年第14期30卷

作者： Xiaolong Zhao Jun Ma Xiangheng Xiao Qi Liu Lin Shao Di Chen Sen Liu Jiebin Niu Xumeng Zhang Yan Wang Rongrong Cao Wei Wang Zengfeng Di Hangbing Lv Shibing Long Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Department of Physics Hubei Nuclear Solid Physics Key Laboratory and Center for Ion beam Application Wuhan University Wuhan 430072 China State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Beijing 100049 China Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing 210009 China Department of Nuclear Engineering Texas A&M University College Station TX 77843 USA Materials Science and Technology Division Los Alamos National Laboratory Los Alamos NM 87545 USA

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Linear and nonlinear optical properties of Sb-doped GeSe_2 thin films

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Chinese Physics B 2015年第6期24卷 483-487页

作者：张振营陈芬陆顺斌王永辉沈祥戴世勋聂秋华 College of Information Science and Engineering Ningbo University Key Laboratory for Micro-Nano Optoelectronic Devices of Ministry of Education College of Physics and Microelectronic ScienceHunan University Laboratory of Infrared Materials and Devices Advanced Technology Research InstituteNingbo University

Sb-doped GeSe2 chalcogenide thin films are prepared by the magnetron co-sputtering method. The linear optical properties of as-deposited films are derived by analyzing transmission spectra. The refractive index rises and the optical band gap decreases from 2.08 eV to 1.41 eV with increasing the Sb content. X-ray photoelectron spectra further confirm the formation of a covalent Sb--Se bond. The third-order nonlinear optical properties of thin films are investigated under femtosecond laser excitation at 800 nm. The results show that the third-order nonlinear optical properties are enhanced with increasing the concentration of Sb. The nonlinear refraction indices of these thin films are measured to be on the order of 10-18 m2/W with a positive sign and the nonlinear absorption coefficients are obtained to be on the order of 10-10 m/W. These excellent properties indicate that Sb-doped Ge-Se films have a good prospect in the applications of nonlinear optical devices.

关键词： chalcogenides films refractive index optical band gap nonlinear optical properties

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Correction: A review of carrier thermoelectric-transport theory in organic semiconductors

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Physical chemistry chemical physics : PCCP 2017年第24期19卷 16283页

作者： Nianduan Lu Ling Li Ming Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of MicroElectronics of the Chinese Academy of Sciences No. 3 Bei-Tu-Cheng West Road Beijing 100029 China. lingli@***.

Correction for 'A review of carrier thermoelectric-transport theory in organic semiconductors' by Nianduan Lu et al., Phys. Chem. Chem. Phys., 2016, 18, 19503-19525.

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Surface Leakage Currents in SiN and Al_2O_3 Passivated AlGaN/GaN High Electron Mobility Transistors

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Chinese Physics Letters 2016年第6期33卷 108-111页

作者：白龙颜伟李兆峰杨香张博文田丽欣张峰 Grzegorz Cywinski Krzesimir Szkudlarek Czeslaw Skierbiszewski Wojciech Knap 杨富华 Engineering Research Center for Semiconductor Integration Technology Institute of SemiconductorsChinese Academy of Sciences Key Laboratory of Semiconductor Material Sciences Institute of SemiconductorsChinese Academy of Sciences Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices Institute of High Pressure Physics Polish Academy of Sciences Laboratoire Charles Coulomb(L2C) UMR 5221 CNRS-Univ.

Surface leakage currents of A1GaN/GaN high electron mobility transistors are investigated by utilizing a circular double-gate structure to eliminate the influence of mesa leakage current. Different mechanisms are found under various passivation conditions. The mechanism of the surface leakage current with AI2 03 passivation follows the two-dimensional variable range hopping model, while the mechanism of the surface leakage current with SiN passivation follows the Frenkel-Poole trap assisted emission. Two trap levels are found in the trap-assisted emission. One trap level has a barrier height of 0.22eV for the high electric field, and the other trap level has a barrier height of 0.12eV for the low electric field.

关键词： AlGaN on it is Surface Leakage Currents in SiN and Al2O3 Passivated AlGaN/GaN High Electron Mobility Transistors of in

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