检索结果-内蒙古大学图书馆

IntML-KNN: A Few-Shot Radio Frequency Fingerprint Identification Scheme for Lora Devices

IEEE Signal Processing Letters 2025年 32卷 2259-2263页

作者： Cao, Xin Tan, Weijie Gao, Qiangqiang Hu, Zhilong Li, Chunguo Guizhou University College of Computer Science and Technology Guiyang550025 China Guizhou University State Key Laboratory of Public Big Data College of Computer Science and Technology Guiyang550025 China Advanced Cryptography and System Security Key Laboratory of Sichuan Province Chengdu610025 China Ministry of Industry and Information Technology Laboratory of Cryptograph Application Technology Innovation and Testing Verification Beijing100015 China Southeast University School of Information Science and Engineering Nanjing210096 China

Deep learning (DL) is widely used in radio frequency fingerprint identification (RFFI). However, in few-shot case, traditional DL-based RFFI need to construct auxiliary dataset to realize radio frequency fingerprint identification. To address this issue, we propose a few-shot RFFI (FS-RFFI) method based on interpolating metric learning and KNN (IntML-KNN). Specifically, the method first extends the dataset with data augmentation, and CutMix interpolation. Secondly, combining with metric learning to enhance the generalization capacity of the model. Finally, KNN algorithm is designed to realize device classification and detection. The proposed IntML-KNN method is verified on the commercial available LoRa dataset. The experimental results indicate that the proposed scheme exhibits strong classification and generalization performance in FS-RFFI. Meanwhile, the recognition rate of the proposed IntML-KNN reaches 97.00% with only 10% samples. © 1994-2012 IEEE.

关键词： Deep learning

来源：评论

学校读者我要写书评

暂无评论

Surface,Size and Thermal Effects in Alkali Metal with Core-Electron Binding-Energy Shifts

引用

Chinese Journal of Chemical Physics 2021年第5期34卷 628-638,I0003,I0004页

作者： Wen-huan Zhu Zhong-kai Huang Mao-lin Bo Jin Huang Cheng Peng Hai Liu National Key Laboratory of Science and Technology on Micro/Nano Fabrication Shanghai Jiao Tong UniversityShanghai 200240China Key Laboratory of Inorganic Special Functional Materials of Chongqing Yangtze Nromal UniversityChongqing 408100China Key Laboratory of Extraordinary Bond Engineering and Advanced Materials Technology of Chongqing Yangtze Normal UniversityChongqing 408100China School of Chemistry and Chemical Engineering Southwest UniversityChongqing 400715China Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China

Consistency between density functional theory calculations and X-ray photoelectron spectroscopy measurements confirms our predications on the undercoordination-induced local bond relaxation and core level shift of alkali metal,which determine the surface,size and thermal properties of ***-resolved photoelectron spectroscopyanalysis method and bond order-length-strength theory can be utilized to quantify the physical parameters regarding bonding identities and electronic property of metal surfaces,which allows for the study of the core-electron binding-energy shifts in alkali *** employing these methods and first principle calculation in this work,we can obtain the information of bond and atomic cohesive energy of under-coordinated atoms at the alkali metal *** addition,the effect of size and temperature towards the binding-energy in the surface region can be seen from the view point of Hamiltonian perturbation by atomic relaxation with atomic bonding.

关键词： Alkali metal First principle calculation Metal surface Binding-energy Size effect Thermal effect

来源：评论

学校读者我要写书评

暂无评论

Real-Time of Channel Temperature Monitoring of P-Gan Hemts Based on Gate Leakage Current

SSRN

引用

SSRN 2023年

作者： Yin, Luqiao Wu, Shuang Ren, Kailin Zhang, Wenkui Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai200444 China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200444 China

The thermal response of Lateral GaN-based High Electron Mobility Transistor is much faster than that of Si-based power devices, owing to its higher power density. This makes temperature-related effects even more critical for GaN HEMTs, highlighting the necessity of monitoring their operating temperature to improve the efficiency and reliability of power circuits. In this article, a real-time monitoring method for channel temperature of p-GaN HEMTs using gate leakage current as a medium is proposed. The dependence of gate current on temperature is demonstrated by electro-thermal TCAD simulation on the reference p-GaN HEMT structure. An improved gate driver circuit is proposed that integrates a monitoring circuit utilizing the current amplification capability of bipolar transistors and an RC integrator network. The efficiency of the proposed solution is confirmed through SPICE electrothermal simulations and experimental validation on commercially available devices. In conclusion, the implementation of the monitoring circuit has been proved effective, offering a promising pathway to improve the reliability of p-GaN HEMTs. © 2023, The Authors. All rights reserved.

关键词： High electron mobility transistors

来源：评论

学校读者我要写书评

暂无评论

Rapid and highly effective bacteria-killing by polydopamine/IR780@MnO2–Ti using near-infrared light

引用

Progress in Natural Science:Materials International 2020年第5期30卷 677-685页

作者： Xingfu Teng Xiangmei Liu Zhenduo Cui Yufeng Zheng Da-fu Chen Zhaoyang Li Yanqin Liang Shengli Zhu Shuilin Wu Hubei Key Laboratory of Polymer Materials Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials School of Materials Science & Engineering Hubei University The Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of China School of Materials Science & Engineering Tianjin University State Key Laboratory for Turbulence and Complex System and Department of Materials Science and Engineering College of Engineering Peking University Beijing JiShuiTan Hospital Beijing Research Institute Orthopaedics & TraumatologyLab Bone Tissue Engineering

Bacterial infections are becoming a serious public health challenge because the abuse of antibiotics worldwide has caused bacterial resistance and the occurrence of superbugs. In this work, a new near-infrared(NIR) photoresponsive coating was constructed on Ti implant material, which was composed of Mn O2, IR780 photosensitizer and polydopamine(PDA). Under the irradiation of 808 nm NIR light, the component of Mn O2in the coating exhibited high photothermal performance, and IR780 could be stimulated to generate ROS as a photosensitizer. The addition of PDA not only improved the cytocompatibility of the composite coating but also strengthened the light absorption ability of the system. Under the irradiation of 808 nm NIR light for 15 min, the composite coating killed 99.94% Staphylococcus aureus and 99.89% Escherichia coli on Ti plates. This rapid and highly effective bactericidal rate was ascribed to the synergistic effects of photothermal performance and photodynamic effect of the coatings excited by NIR light. Cell culture tests showed that PDA/IR780@Mn O2–Ti had good cytocompatibility due to the excellent biocompatibility of PDA and nanostructured surface. Therefore,this surface system will be a very promising plateform to safely and effectively kill bacteria on biomedical devices and implants in a short time.

关键词： Antibacterial Photothermal Photocatalytic MnO2 Implant

来源：评论

学校读者我要写书评

暂无评论

Improved stability of blue TADF organic electroluminescent diodes via OXD-7 based mixed host

引用

Frontiers of Optoelectronics 2021年第4期14卷 491-498页

作者： Weiguang LI Jie TANG Yanqiong ZHENG Junbiao PENG Jianhua ZHANG Bin WEI Xifeng LI Key Laboratory of Advanced Display and System Applications of Ministry of Education School of Mechatronic Engineering and AutomationShanghai UniversityShanghai 200072China School of Materials Science and Engineering Shanghai UniversityShanghai 200072China State Key Laboratory of Luminescent Materials and Devices South China University of TechnologyGuangzhou 510640China

Thermally activated delayed fluorescence(TADF)organic light-emitting diodes(OLEDs)have been demonstrated in applications such as displays and solid-state ***,weak stability and ineffi-cient emission of blue TADF OLEDs are two key bottlenecks limiting the development of solution processable displays and white light *** work presents a solution-processed OLED using a blue-emitting TADF small molecule bis[4-(9,9-dimethyl-9,10-dihydroacridine)phenyl]sulfone(DMAC-DPS)as an *** comparatively investigated the effects of single host poly(Nvinylcarbazole)(PVK)and a co-host of 60%PVK and 30%2,2′-(1,3-phenylene)-bis[5-(4-tert-butylphenyl)-1,3,4-oxadiazole](OXD-7)on the device performance(the last 10%is emitter DMAC-DPS).The co-host device shows lower turn-on voltage,similar maximum luminance,and much slower external quantum efficiency(EQE)*** other words,device stability improved by doping OXD-7 into PVK,and the device impedance simultaneously and significantly reduced from 8.6103 to 4.2103 W at 1000 ***,the electroluminescent stability of the co-host device was significantly enhanced by adjusting the annealing temperature.

关键词： blue thermally activated delayed fluorescence organic light-emitting diode(TADF OLED) 2 2′-(1 3-phenylene)-bis[5-(4-tert-butylphenyl)-1 3 4-oxadiazole](OXD-7) bis[4-(9 9-dimethyl-9 10-dihydroacridine)phenyl]sulfone(DMAC-DPS) stability

来源：评论

学校读者我要写书评

暂无评论

Stacking, Strain-Engineering Induced Altermagnetism, Multipiezo Effect, and Topological State in Two-Dimensional Materials

arXiv

引用

arXiv 2025年

作者： Xun, Wei Liu, Xin Zhang, Youdong Wu, Yin-Zhong Li, Ping Jiangsu Engineering Research Center for Design and Application of Intelligent Detection Equipment School of Electronic Engineering Jiangsu Vocational College of Electronics and Information Huaian223003 China School of Physical Science and Technology Suzhou University of Science and Technology Suzhou215009 China State Key Laboratory for Mechanical Behavior of Materials Center for Spintronics and Quantum System School of Materials Science and Engineering Xi’an Jiaotong University Shaanxi Xi’an710049 China State Key Laboratory for Surface Physics Department of Physics Fudan University Shanghai200433 China State Key Laboratory of Silicon and Advanced Semiconductor Materials Zhejiang University Hangzhou310027 China

Altermagnetism, as a newly identified form of unconventional antiferromagnetism, enables the removal of spin degeneracy in the absence of net magnetization that provides a platform for the low power consumption and ultra-fast device applications. However, the rare attention has been paid to the relationship between stacking, strain and altermagnet, multipiezo effect and topological state. Here, we propose a mechanism to realize the altermagnet, multipiezo effect, and topological state in two-dimensional materials by the stacking and strain engineering. Based on the analysis of symmetry, we find that the spin splitting feature related to the Ut, PTt, MzUt, or MzPTt symmetries in altermagnet multilayers. In addition, we find that the stacking engineering can effectively realize the transform from antiferromagnetism to altermagnetism and semiconductor to metal for the Jauns bilayer V2SeTeO. More interestingly, the strain not only induces an intriguing multipiezo effect, encompassing the piezovalley, piezomagnetism and piezoelectric, but also achieves the abundant topological phase. Our findings offer a generalized direction for manipulating the spin splitting, valley polarization, and topological states, promoting practical application of valleytronic and spintronic devices based on two-dimensional altermagnets. © 2025, CC BY.

关键词： Antiferromagnetism

来源：评论

学校读者我要写书评

暂无评论

A Novel Monolithically Integrated Structure of GaN-based Micro-LED and its Driver HEMT

A Novel Monolithically Integrated Structure of GaN-based Mic...

引用

China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Yuan An Kailin Ren Xueying Xiu Zebin Xu Zhuang Wu Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Key Laboratory of Advanced Display and System Applications (Ministry of Education) Shanghai University Shanghai University Shanghai China

ISBN: (纸本)9781665495479

In this work, a novel LED-HEMT integrated device structure with a p-GaN cap layer under the drain electrode of HEMT and one or more InGaN layers inserted between AlGaN/GaN is proposed for the monolithic integration of GaN-based Micro-LED and its driver HEMT. This structure is a promising candidate for the optoelectronic switch in high-speed visible light communications owing to its elimination of metal-interconnects and reduction of parasitic capacitance. By TCAD simulations, the distribution of radiative recombination rate in this structure is investigated and the 2-D integrals of the radiative recombination rate for various device structure designs are compared. It is concluded that the integration structure with InGaN layers provides higher radiative recombination than that without InGaN layers. Device structure parameters are optimized, including Al content in AlGaN barrier layer, In content in InGaN layers, and thickness of InGaN layers.

关键词： Surface waves Photonic band gap Radiative recombination Switches HEMTs Wide band gap semiconductors Semiconductor process modeling

来源：评论

学校读者我要写书评

暂无评论

DNN Task Assignment in UAV Networks: A Generative AI Enhanced Multi-Agent Reinforcement Learning Approach

arXiv

引用

arXiv 2024年

作者： Tang, Xin Chen, Qian Weng, Wenjie Liao, Binhan Wang, Jiacheng Cao, Xianbin Li, Xiaohuan Guangxi University Key Laboratory of Intelligent Networking and Scenario System School of Information and Communication Guilin University of Electronic Technology Guilin541004 China The College of Computing and Data Science Nanyang Technological University 639798 Singapore School of Architecture and Transportation Engineering Guilin University of Electronic Technology Guilin541004 China National Engineering Laboratory for Comprehensive Transportation Big Data Application Technology Guangxi Nanning530001 China College of Computing and Data Science Nanyang Technological University 639798 Singapore School of Electronic and Information Engineering The Key Laboratory of Advanced Technology of Near Space Information System Ministry of Industry and Information Technology of China Beihang University Beijing100191 China

Unmanned Aerial Vehicles (UAVs) possess high mobility and flexible deployment capabilities, prompting the development of UAVs for various application scenarios within the Internet of Things (IoT). The unique capabilities of UAVs give rise to increasingly critical and complex tasks in uncertain and potentially harsh environments. The substantial amount of data generated from these applications necessitates processing and analysis through deep neural networks (DNNs). However, UAVs encounter challenges due to their limited computing resources when managing DNN models. This paper presents a joint approach that combines multiple-agent reinforcement learning (MARL) and generative diffusion models (GDM) for assigning DNN tasks to a UAV swarm, aimed at reducing latency from task capture to result output. To address these challenges, we first consider the task size of the target area to be inspected and the shortest flying path as optimization constraints, employing a greedy algorithm to resolve the subproblem with a focus on minimizing the UAV’s flying path and the overall system cost. In the second stage, we introduce a novel DNN task assignment algorithm, termed GDM-MADDPG, which utilizes the reverse denoising process of GDM to replace the actor network in multi-agent deep deterministic policy gradient (MADDPG). This approach generates specific DNN task assignment actions based on agents’ observations in a dynamic environment. Simulation results indicate that our algorithm performs favorably compared to benchmarks in terms of path planning, Age of Information (AoI), energy consumption, and task load balancing. Copyright © 2024, The Authors. All rights reserved.

关键词： Motion planning

来源：评论

学校读者我要写书评

暂无评论

An Optical Tracking system with Defaced Marker Detection 2021

An Optical Tracking System with Defaced Marker Detection

引用

2021 4th International Conference on Sensors, Signal and Image Processing

作者： Yu Qiu Zhao Zheng Ruidi Ou Xiaoming Hu Jingfan Fan Jian Yang Beijing Engineering Research Center of Mixed Reality and Advanced Display School of Optics and Photonics Beijing Institute of Technology China Key Laboratory of Convergence Medical Engineering System and Healthcare Technology School of Life Science Beijing Institute of Technology China

ISBN: (纸本)9781450385725

Optical tracking systems (OTSs) have been widely used in clinical practice to fulfill the high precision needs of contemporary surgery. The markers that are defaced in the production or surgery reduce the accuracy and tracking range of OTS. This effect was not considered in current products from either industry or academia. In this paper, we propose an OTS which can detect the defaced markers automatically. A stereo camera module is set to track surgical instruments by locating the markers affixed to them. An adaptive threshold approach is suggested to locate the markers. The typical fiducial localization error of our OTS reaches 0.28 mm, which is totally comparable to commercial devices. A defaced marker detection method based on the luminous energy model of OTS is proposed and can be used to recognize the defaced markers regardless of their relative positions to the OTS.

关键词： Defaced Marker Detection Optical Tracking system Surgical Instrument Tracking

来源：评论

学校读者我要写书评

暂无评论

Brief Review of Silver Sinter-bonding Processing for Packaging High-temperature Power Devices

引用

Chinese Journal of Electrical Engineering 2020年第3期6卷 25-34页

作者： Haidong Yan Peijie Liang Yunhui Mei Zhihong Feng School of Mechanical and Electrical Engineering Guilin University of Electronic TechnologyGuilin 541004China Guangxi Key Lab of Manufacturing System and Advanced Manufacturing Technology Guilin 541004China School of Materials Science and Engineering Tianjin UniversityTianjin 300072China Key Laboratory of Advanced Ceramics and Machining Technology of Ministry of Education Guilin 541004China National Key Lab of Application Specific Integrated Circuit Hebei Semiconductor Research InstituteShijiazhuang 050051China

Silver sintering is receiving increasing attention due to its novel die-attach technique for high-temperature power *** thermal conductivity,high melting point/remelting temperature and low-temperature sintering behaviors of the silver sintered attachment meet the requirements of high-temperature applications for power devices,specifically SiC *** merits and demerits of the existing pressure-assisted sintering and pressure-less sintering techniques using nano-scale,micro-scale and micro-nano-scale hybrid silver sintered materials are separately *** emerging rapid sintering approaches,such as the electric-assisted approach,are briefly introduced and the technical outlook is *** addition,the study highlights the importance of creating a brief resource guide on using the correct sintering methods.

关键词： Pressure-less sintering pressure-assisted nanosilver paste high-temperature power module insulated gate bipolar translators(IGBT) silicon carbide(SiC)

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：