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Hybrid bonding thermodynamic simulation of 3×3 array of Micro-LED fabricated based on flip-chip bonding

Hybrid bonding thermodynamic simulation of 3×3 array of Mic...

China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Jianxin Li Haojie Zhou Xiaoxiao Ji Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China School of Materials Science and Engineering Shanghai University Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

In this paper, ANSYS was used to perform a hybrid bonding thermodynamic simulation of Micro-LED fabricated based on flip-chip *** simulated the effects of different ILDs (interlayer dielectrics) and different diameters of In bumps on the mean stress of the bonding surface. The results show that filling BCB (Benzo cyclobutene)/PI (Polyimide)/SiO 2 can significantly reduce the mean stress on the In bumps bonding area, among which, filling BCB/PI is better than filling SiO 2 . And when the diameter of the In bumps is 5 μm, the mean stress on the In bumps bonding area is lowest. For the mean stress on the bonding area of the ILDs, filling BCB/PI is also much better than filling SiO 2 . Changing the diameter of the In bumps has little effect on the mean stress of the ILDs bonding area filled with BCB/PI. As for the bonding area of the ILDs filled with SiO 2 , the mean stress increases as the diameter of the In bumps increases. This paper uses simulation experiments to study the mean stress on different bonding areas during the hybrid bonding process of preparing Micro-LED, which provides a theoretical basis for improving the bonding strength and yield of Micro-LED, and provides ideas for realizing the industrialization of Micro- LED.

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Transient Thermodynamic Simulation of Micro LED Array Bonding

Transient Thermodynamic Simulation of Micro LED Array Bondin...

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China International Forum o Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS)

作者： Jinwen Pan Haojie Zhou Xiaoxiao Ji Liang Chen Luqiao Yin Jianhua Zhang School of Microelectronics Shanghai University Shanghai China Key Laboratory of Advanced Display and System Applications Shanghai University Ministry of Education Shanghai China School of Materials Science and Engineering Shanghai University Shanghai China School of Mechatronic Engineering and Automation Shanghai University Shanghai China

Micro LED display technology is considered to be the next generation of display technology and finds widespread applications in displays and visible light communication. key cooperation plays a crucial role in achieving electrical interconnections for Micro LED, which significantly impact their luminous quality and reliability. This study aims to analyze the stress-strain evolution during the bonding process of Micro LED arrays with cylindrical and spherical In bumps using COMSOL. The results demonstrate that the displacement of the bumps after bonding decreases by up to 97% compared to the displacement observed during the temperature-holding phase. Furthermore, the stresses during the temperature rise and fall stages approximately exhibit a linear relationship with temperature, and residual stresses exist after bonding. Additionally, residual stresses remain present after bonding. This study provides theoretical guidance for optimizing the bonding process of Micro LED and further exploration for the commercialization of Micro LED.

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Rapid and highly effective bacteria-killing by polydopamine/IR780@MnO2–Ti using near-infrared light

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Progress in Natural Science:Materials International 2020年第5期30卷 677-685页

作者： Xingfu Teng Xiangmei Liu Zhenduo Cui Yufeng Zheng Da-fu Chen Zhaoyang Li Yanqin Liang Shengli Zhu Shuilin Wu Hubei Key Laboratory of Polymer Materials Ministry-of-Education Key Laboratory for the Green Preparation and Application of Functional Materials School of Materials Science & Engineering Hubei University The Key Laboratory of Advanced Ceramics and Machining Technology by the Ministry of Education of China School of Materials Science & Engineering Tianjin University State Key Laboratory for Turbulence and Complex System and Department of Materials Science and Engineering College of Engineering Peking University Beijing JiShuiTan Hospital Beijing Research Institute Orthopaedics & TraumatologyLab Bone Tissue Engineering

Bacterial infections are becoming a serious public health challenge because the abuse of antibiotics worldwide has caused bacterial resistance and the occurrence of superbugs. In this work, a new near-infrared(NIR) photoresponsive coating was constructed on Ti implant material, which was composed of Mn O2, IR780 photosensitizer and polydopamine(PDA). Under the irradiation of 808 nm NIR light, the component of Mn O2in the coating exhibited high photothermal performance, and IR780 could be stimulated to generate ROS as a photosensitizer. The addition of PDA not only improved the cytocompatibility of the composite coating but also strengthened the light absorption ability of the system. Under the irradiation of 808 nm NIR light for 15 min, the composite coating killed 99.94% Staphylococcus aureus and 99.89% Escherichia coli on Ti plates. This rapid and highly effective bactericidal rate was ascribed to the synergistic effects of photothermal performance and photodynamic effect of the coatings excited by NIR light. Cell culture tests showed that PDA/IR780@Mn O2–Ti had good cytocompatibility due to the excellent biocompatibility of PDA and nanostructured surface. Therefore,this surface system will be a very promising plateform to safely and effectively kill bacteria on biomedical devices and implants in a short time.

关键词： Antibacterial Photothermal Photocatalytic MnO2 Implant

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37-2:Invited Paper:Intermolecular Charge Transfer for High-Performance Organic Light-Emitting Diodes

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SID Symposium Digest of Technical Papers 2024年第S1期55卷 312-312页

作者： Zhen Zhang Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Yanchang 149 Shanghai China 200072

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P-15.30: Thermally Activated Delayed Fluorescent Host for Highly Efficient Deep-Red OLEDs

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SID Symposium Digest of Technical Papers 2024年第S1期55卷 1524-1524页

作者： Panpan Zang Youjun Wu Zhen Zhang Peng Wu Zixing Wang Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Yanchang 149 Shanghai China 200072

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Magnesium cationic cue enriched interfacial tissue microenvironment nurtures the osseointegration of gamma-irradiated allograft bone

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Bioactive Materials 2022年第4期7卷 32-47页

作者： Wenhao Wang Jie Shen Yuan Meng Miaoman Ye Shaozhang Lin Qi Zhao Le Wang Kenneth M.C.Cheung Shuilin Wu Yufeng Zheng Xuanyong Liu Paul K.Chu Kelvin W.K.Yeung Zhi-Yong Zhang Translational Research Centre of Regenerative Medicine and 3D Printing of Guangzhou Medical University Guangdong Province Engineering Research Center for Biomedical EngineeringState Key Laboratory of Respiratory DiseaseThe Third Affiliated Hospital of Guangzhou Medical UniversityGuangzhou510150PR China Department of Orthopaedics and Traumatology The University of Hong KongHong Kong999077PR China Shenzhen Key Laboratory for Innovative Technology in Orthopaedic Trauma The University of Hong Kong Shenzhen HospitalShenzhen518053PR China Department of Orthopaedic Surgery The Third Affiliated Hospital of Guangzhou Medical UniversityGuangzhou510150PR China Shenzhen Key Laboratory of Spine Surgery Department of Spine SurgeryPeking University Shenzhen HospitalShenzhen518036PR China Ministry of Education Key Laboratory for the Green Preparation and Application of Functional Materials Hubei Key Laboratory of Polymer MaterialsSchool of Materials&EngineeringHubei UniversityWuhan430062PR China Ministry of Education Key Laboratory for Advanced Ceramics and Machining Technology School of Materials Science&EngineeringTianjin UniversityTianjin300352PR China State Key Laboratory for Turbulence and Complex System Department of Materials Science and EngineeringCollage of EngineeringPeking UniversityBeijing100871PR China State Key Laboratory of High Performance Ceramics and Superfine Microstructure Shanghai Institute of CeramicsChinese Academy of SciencesShanghai200050PR China Department of Materials Science and Engineering City University of Hong KongHong Kong999077PR China

Regardless of the advancement of synthetic bone substitutes,allograft-derived bone substitutes still dominate in the orthopaedic circle in the treatments of bone ***,the stringent devitalization process jeopardizes their osseointegration with host bone and therefore prone to long-term ***,improving osseointegration and transplantation efficiency remains *** alteration of bone tissue microenvironment(TME)to facilitate osseointegration has been generally ***,the concept of exerting metal ionic cue in bone TME without compromising the mechanical properties of bone allograft is *** address this concern,an interfacial tissue microenvironment with magnesium cationc cue was tailored onto the gamma-irradiated allograft bone using a customized magnesium-plasma surface *** formation of the Mg cationic cue enriched interfacial tissue microenvironment on allograft bone was verified by the scanning ion-selective electrode *** cellular activities of human TERT-immortalized mesenchymal stem cells on the Mg-enriched grafts were notably *** the animal test,superior osseointegration between Mg-enriched graft and host bone was found,whereas poor integration was observed in the gamma-irradiated controls at 28 days ***,the bony in-growth appeared on magnesium-enriched allograft bone was significant *** mechanism possibly correlates to the up-regulation of integrin receptors in mesenchymal stem cells under modified bone TME that directly orchestrate the initial cell attachment and osteogenic differentiation of mesenchymal stem ***,our findings demonstrate the significance of magnesium cation modified bone allograft that can potentially translate to various orthopaedic procedures requiring bone augmentation.

关键词： Osseointegration Allograft bone Bone tissue microenvironment Bone-implant interface Magnesium

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Light-emitting field-effect transistors with EQE over 20%enabled by a dielectric-quantum dots-dielectric sandwich structure

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Science Bulletin 2022年第5期67卷 529-536,M0004页

作者： Lingmei Kong Jialong Wu Yunguo Li Fan Cao Feijiu Wang Qianqian Wu Piaoyang Shen Chengxi Zhang Yun Luo Lin Wang Lyudmila Turyanska Xingwei Ding Jianhua Zhang Yongbiao Zhao Xuyong Yang Key Laboratory of Advanced Display and System Applications of Ministry of Education Shanghai UniversityShanghai 200072China CAS Key Laboratory of Crust-Mantle Materials and Environments School of Earth and Space SciencesUniversity of Science and Technology of ChinaHefei 230026China Henan Key Laboratory of Photovoltaic Materials Henan UniversityKaifeng 475004China Faculty of Engineering University of NottinghamNottingham NG72RDUK Center for Optoelectronic Engineering Research Department of PhysicsSchool of Physics and AstronomyYunnan UniversityKunming 650091China

Emerging quantum dots(QDs)based light-emitting field-effect transistors(QLEFETs)could generate light emission with high color purity and provide facile route to tune optoelectronic properties at a low fabrication *** efforts have been devoted to designing device structure and to understanding the underlying physics,yet the overall performance of QLEFETs remains low due to the charge/exciton loss at the interface and the large band offset of a QD layer with respect to the adjacent carrier transport ***,we report highly efficient QLEFETs with an external quantum efficiency(EQE)of over 20%by employing a dielectric-QDs-dielectric(DQD)sandwich *** DQD structure is used to control the carrier behavior by modulating energy band alignment,thus shifting the exciton recombination zone into the emissive ***,enhanced radiative recombination is achieved by preventing the exciton loss due to presence of surface traps and the luminescence quenching induced by interfacial charge *** DQD sandwiched design presents a new concept to improve the electroluminescence performance of QLEFETs,which can be transferred to other material systems and hence can facilitate exploitation of QDs in a new type of optoelectronic devices.

关键词： Light-emitting field-effect transistors Quantum dots Electroluminescence External quantum efficiency

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High Color Gamut Top-Emitting Organic Light-Emitting Diode Based on Metal/Transparent Conductive Oxide Composite Electrode

SSRN

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SSRN 2025年

作者： Lin, Yang Zhu, Yangyang Zhao, Ben Gu, Jialu Xu, Yachen Lan, Weixia Chen, Guo Shi, Wei Kido, Junji Wei, Bin Shanxi Datong University China School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Shanghai Engineering Research Center for Integrated Circuits and Advanced Display Materials Shanghai University Shanghai200072 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200072 China Nanan Institute Shanghai University Nan'an Fujian Quanzhou362300 China Frontier Center for Organic Materials Yamagata University 4-3-16 Jonan Yonezawa992-8510 Japan

Top-emitting organic light-emitting diodes (TEOLEDs) based on metal/transparent conductive oxide composite anodes, which were Al/ITO and Ag/ITO, were studied. The microcavity effect was optimized by adjusting the microcavity thickness and microcavity order to achieve high color gamut RGB monochromatic light display. Through mathematical modeling and spectral simulation, TEOLEDs with different microcavity structures were designed. The results showed that the full width at half maximum and the color purity of the light of the TEOLED based on the second-order microcavity were significantly optimized compared to those of the TEOLED based on the first-order microcavity. Meanwhile, the TEOLEDs based on the Ag/ITO composite electrode exhibited better optoelectronic performance, with the significantly enhanced external quantum efficiency of up to 19.40%, narrower full width at half maximum of down to 20 nm, and improved color purity. The corresponding red, green, and blue TEOLEDs had achieved excellent color coordinates of (0.697, 0.301), (0.154, 0.769), and (0.139, 0.050), and the color gamut area of the device had reached 172.4% of the color gamut area of the bottom-emitting OLED, 125.6% of the National Television system Committee standard color gamut, and 93.8% of the ITU-R Recommendation BT.2020 standard color gamut. © 2025, The Authors. All rights reserved.

关键词： Organic light emitting diodes (OLED)

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Design and Analysis of Cylindrical Liquid Lens Based on Electrowetting

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Guangxue Xuebao/Acta Optica Sinica 2025年第10期45卷

作者： Zhou, Le Ma, Xiangteng Zhao, Wenfeng Li, Xifeng Key Laboratory of Advanced Display and System Applications Ministry of Education School of Mechatronic Engineering and Automation Shanghai University Shanghai200072 China Kunshan Xuanrou Optoelectronics Technology Co. Ltd. Jiangsu Suzhou215300 China

Objective Cylindrical lenses, with their unique ability to focus light in a single dimension, are critical for applications such as beam shaping and improving illumination uniformity. However, most existing research on electrowetting-based liquid lenses focuses on spherical configurations, leaving cylindrical variants underexplored. These cylindrical lenses face challenges such as high driving voltages, limited focal ranges, and structural inefficiencies. In this paper, we address these challenges by proposing a novel cylindrical electrowetting liquid lens design featuring a conical cavity with segmented dielectric layers. Our approach aims to advance cylindrical liquid lens technology for compact optical systems, targeting low-voltage operation (35 ‒ 55 V), wide focal length tunability (139 ‒ 999 mm), and enhanced optical performance. We provide foundational insights for applications in laser processing, optical sensing, and medical imaging by bridging theoretical advancements with practical implementation. Methods We employ a multidisciplinary approach combining theoretical analysis, numerical simulations, and experimental validation. The lens structure incorporates a conical cavity with alternating thick (15 µm) and thin (3 µm) dielectric layers [Fig. 1(d)], enabling asymmetric liquid interface control based on the Young-Lippmann equation (Eq. 1). Theoretical modeling establishes the relationship between applied voltage and interface curvature, while a fifth-degree polynomial (Eq. 2) ensures high-precision fitting of simulated interface profiles (R2>0.98, Table 1). COMSOL Multiphysics 6.0 simulates voltage-dependent interface deformations (Fig. 2), and Zemax evaluates optical performance, including focal length, aberrations, and field curvature (Figs. 6 and 7). Fabrication involves photolithography and parylene-C deposition to create dielectric layers (Fig. 8), followed by experimental testing using a laser-CCD setup to measure focal length indirectly via spot wi

关键词： Fiber optic sensors

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Real-Time of Channel Temperature Monitoring of P-Gan Hemts Based on Gate Leakage Current

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SSRN 2023年

作者： Yin, Luqiao Wu, Shuang Ren, Kailin Zhang, Wenkui Zhang, Jianhua School of Microelectronics Shanghai University Shanghai200444 China Shanghai Key Laboratory of Chips and Systems for Intelligent Connected Vehicle Shanghai University Shanghai200444 China Shanghai Collaborative Innovation Center of Intelligent Sensing Chip Technology Shanghai University Shanghai200444 China Key Laboratory of Advanced Display and System Applications Ministry of Education Shanghai University Shanghai200444 China

The thermal response of Lateral GaN-based High Electron Mobility Transistor is much faster than that of Si-based power devices, owing to its higher power density. This makes temperature-related effects even more critical for GaN HEMTs, highlighting the necessity of monitoring their operating temperature to improve the efficiency and reliability of power circuits. In this article, a real-time monitoring method for channel temperature of p-GaN HEMTs using gate leakage current as a medium is proposed. The dependence of gate current on temperature is demonstrated by electro-thermal TCAD simulation on the reference p-GaN HEMT structure. An improved gate driver circuit is proposed that integrates a monitoring circuit utilizing the current amplification capability of bipolar transistors and an RC integrator network. The efficiency of the proposed solution is confirmed through SPICE electrothermal simulations and experimental validation on commercially available devices. In conclusion, the implementation of the monitoring circuit has been proved effective, offering a promising pathway to improve the reliability of p-GaN HEMTs. © 2023, The Authors. All rights reserved.

关键词： High electron mobility transistors

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