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检索条件"机构=Key Laboratory of Fabrication Technologies for Integrated Circuits"
352 条 记 录,以下是61-70 订阅
排序:
integrated Organic Electrochemical Transistors for Serotonin Detection and Synaptic Plasticity
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IEEE Journal of the Electron Devices Society 2025年
作者: Xie, Yifan Jin, Qingqing Cheng, Miao Tian, Yue Wang, Jinyao Chu, Jingyun Liu, Changrui Li, Mengmeng Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China University of Chinese Academy of Sciences School of Integrated Circuits Beijing100049 China
Organic electrochemical transistors (OECTs) have gained increasing attention for their potential in neuromorphic electronics and neurotransmitter sensing, thanks to their inherent low-power operation and high sensitiv... 详细信息
来源: 评论
Technique of mask optimization for achieving the maximal effective litho-CPW
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Optics Express 2025年 第12期33卷 25783-25797页
作者: Jiashuo Wang Hao Shen Xiaojing Su Wei Zhao Lisong Dong Yajuan Su Yayi Wei State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China suxiaojing@*** weiyayi@***
Achieving a large lithography process window (PW) via computational lithography is a crucial prerequisite for ensuring adequate product yield in advanced-node integrated-circuit manufacturing technologies. However, as... 详细信息
来源: 评论
Surface Potential-Based Compact Model for IGZO-DRAM Enables the TCAD-to-SPICE Framework for Reliability-Aware DTCO Flow
Surface Potential-Based Compact Model for IGZO-DRAM Enables ...
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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
作者: Xufan Li Wenfeng Jiang Chen Gu Yue Zhao Di Geng Guanhua Yang Lingfei Wang Ling Li Key Lab of Fabrication Technologies for Integrated Circuits CAS Beijing China Lab of Microelectronics Devices and Integrated Technology IMECAS Beijing China
With the Design-Technology Co-Optimization (DTCO) being increasingly significant in IGZO-DRAM, a surface potential-based compact model is highly required. For better understanding the disorder effects, an in-house TCA... 详细信息
来源: 评论
In-materio reservoir computing based on nanowire networks:fundamental,progress,and perspective
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Materials Futures 2023年 第2期2卷 79-93页
作者: Renrui Fang Woyu Zhang Kuan Ren Peiwen Zhang Xiaoxin Xu Zhongrui Wang Dashan Shang State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029People’s Republic of China Department of Electrical and Electronic Engineering The University of Hong KongHong Kong 999077People’s Republic of China University of Chinese Academy of Sciences Beijing 100049People’s Republic of China
The reservoir computing(RC)system,known for its ability to seamlessly integrate memory and computing functions,is considered as a promising solution to meet the high demands for time and energy-efficient computing in ... 详细信息
来源: 评论
Vertical Channel-All-Around (CAA) IGZO FET with Recessed Source/Drain Structure to Improve Contact Characteristics
IEEE Electron Device Letters
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IEEE Electron Device Letters 2025年
作者: Chen, Chuanke Gu, Chen Zhao, Yue Duan, Xinlv Lu, Congyan Niu, Jiebin Zhang, Kaiping Liu, Yu Zhao, Shengjie Li, Weiwei Wu, Wanming Zhang, Chunyu Hu, Ke Wang, Shipeng Tong, Qingding Tang, Yinzhi Lu, Nianduan Geng, Di Li, Ling Institute of Microelectronics of Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China
We proposed recessed source/drain(S/D) structure for vertical channel-all-around (CAA) IGZO FET to introduce contact interlayer and improve its contact characteristics. The IZO interlayer introduced between S/D and IG... 详细信息
来源: 评论
Improved Memory Window and Retention of Silicon Channel Hf0.5Zr0.5O2 FeFET by Using SiO2/HfO2/SiO2 Gate Side Interlayer
Improved Memory Window and Retention of Silicon Channel Hf0....
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Annual International Symposium on Reliability Physics
作者: Runhao Han Jia Yang Tao Hu Mingkai Bai Yajing Ding Xianzhou Shao Saifei Dai Xiaoqing Sun Junshuai Chai Hao Xu Xiaolei Wang Wenwu Wang Tianchun Ye Chinese Academy of Sciences Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing Chinese Academy of Sciences Institute of Microelectronics Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China
We demonstrate a Si-channel Hf 0 . 5 Zr 0 . 5 O 2 FeFET that achieves a record-high memory window (MW) of up to 19.4 V, together with improved data retention. This advancement is realized by inserting the SiO 2 /HfO 2... 详细信息
来源: 评论
Laser-Induced Low Temperature Dopant Segregation Schottky Barrier Mosfet for Monolithic-3D
Laser-Induced Low Temperature Dopant Segregation Schottky Ba...
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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
作者: Feixiong Wang Yadong Zhang Jinbiao Liu Yunjiao Bao Zhiyao Wang Shuang Liu Mingzheng Ding Zhaohao Zhang Qingzhu Zhang Huaxiang Yin Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing Chinese Academy of Sciences Institute of Microelectronics Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China
In this work, we present a BEOL-compatible lowtemperature (Low-T, $\leq 500^{\circ} \mathrm{C}$ ) laser-induced silicide dopant segregation source/drain (LSDS S/D) technology for Monolithic-3D integrations. A nanoseco... 详细信息
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A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Thickness (sub-8nm), Low Thermal Budget (350oC), 100% Initial Chip Yield, Low Power Consumption (0.7 pJ/bit at 2V write voltage), and Prominent Endurance (>1012)
A 256 Kbit Hf0.5Zr0.5O2-based FeRAM Chip with Scaled Film Th...
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2023 International Electron Devices Meeting, IEDM 2023
作者: Jiang, Pengfei Jiang, Haijun Yang, Yang Tai, Lu Wei, Wei Gong, Tiancheng Wang, Yuan Xu, Pan Lv, Shuxian Wang, Boping Gao, Jianfeng Li, Junfeng Luo, Jun Yang, Jianguo Luo, Qing Liu, Ming Shandong University School of Information Science and Engineering Qingdao China Institute of Microelectronics Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits Beijing China Institute of Microelectronics Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Beijing China Zhangjiang Lab Shanghai China
In this work, we successfully resolve the remanent polarization (Pr) degradation issue, which is caused by the thermal budget decreasing and the film thickness scaling of Hf0.5Zr0.5O2 (HZO), and co-integrate the TiN/H...
来源: 评论
A MONOLITHICALLY integrated MICROCANTILEVER ARRAY FOR BIOMOLECULAR DETECTION  26
A MONOLITHICALLY INTEGRATED MICROCANTILEVER ARRAY FOR BIOMOL...
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26th International Conference on Miniaturized Systems for Chemistry and Life Sciences, MicroTAS 2022
作者: Liu, Yi Lin, Cong Miao, Jiahao Yu, Xiaomei National Key Laboratory of Science and Technology on Micro/Nano Fabrication School of Integrated Circuits Peking University Beijing100871 China
In this paper, a monolithically integrated microcantilever chip consisting of a piezoresistive microcantilever array and an on-chip signal processing circuits is developed based on a SOI CMOS process. Both the piezore... 详细信息
来源: 评论
Direct Evidence of Oxygen Vacancy Generation in Whole Gate Stacks Through Multiple Electrical and Atomic-Scale Physical Methods as the Cause of Endurance Failure in FeFETs
Direct Evidence of Oxygen Vacancy Generation in Whole Gate S...
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IEEE Electron Devices Technology and Manufacturing Conference (EDTM)
作者: Xianzhou Shao Hao Xu Saifei Dai Fengbin Tian Xiaoyu Ke Jiahui Duan Min Liao Xinpei Jia Xiaoqing Sun Junshuai Chai Jun Luo Wenwu Wang Xiaolei Wang Key Laboratory of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Integrated Circuits University of Chinese Academy of Sciences Beijing China
We have experimentally confirmed that the oxygen vacancy ( $\mathrm{V}_{\mathrm{O}}$ ) generation within whole gate stacks is the origin of the endurance failure in Si FeFET by multiple electrical methods and atomic-s... 详细信息
来源: 评论