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Comprehensive trade-off strategy for SiC MOSFETs using buried-MOS configuration

Chip 2025年第1期4卷 19-26页

作者： Junhong Feng Li Zheng Xinhong Cheng Lingyan Shen Xuetong Zhou Wenyu Lu Jiayu Zeng State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China

While silicon carbide(SiC)metal-oxide-semiconductor field-effect transistors(MOSFETs)have entered commercial markets,they still rely on specialized device structural approaches tailored to meet specific application *** intricate and interdependent relationships among diverse physical parameters of SiC MOSFETs have not been fully elucidated to address the trade-offs that influence each *** study aims to clarify these complex relationships and propose a well-balanced trade-off *** proposed buried-MOS configuration ensures a harmonious balance among lower Ron,sp,reduced CGD,and milder EOX without compromising breakdown voltage(BV),thereby optimizing the interconnected physical parameters of SiC devices and significantly enhancing their highvoltage,high-frequency performance and *** experimental results quantitatively demonstrate the advantages of the buried-MOS structure:high-frequency figure of merit high-frequency figure of merit(HF-FOM)(RDS,on3CGD)by 2.53,HF-FOM(RDS,on 3 QGD)by 2.23 and Baliga figure of merit(BFOM[4BV^(2)/Ron,sp)by 1.73 compared with the conventional ***,this approach embodies both theoretical significance and practical applicability,which is compatible with the existing large-scalemanufacturing processes and requires no additional steps.

关键词： SiC MOSFETs JFET region Trade-off Figure of merits

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Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile applications

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Energy & Environmental Materials 2024年第5期7卷 408-418页

作者： Bingkun Wang Jun Jiang Kevin Baldwin Huijuan Wu Li Zheng Mingming Gong Xuehai Ju Gang Wang Caichao Ye Yongqiang Wang Department of Microelectronic Science and Engineering School of Physical Science and TechnologyNingbo UniversityNingbo 315211China Key Laboratory of Soft Chemistry and Functional Materials of MOE School of Chemistry and Chemical Engineering Nanjing University of Science and TechnologyNanjing 210094China Center for Integrated Nanotechnologies Los Alamos National LaboratoryLos Alamos 87545New MexicoUSA National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Academy for Advanced Interdisciplinary Studies&Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Guangdong Provincial Key Laboratory of Computational Science and Material Design Southern University of Science and TechnologyShenzhen 518055China Materials Science and Technology Division Los Alamos National LaboratoryLos Alamos 87545New MexicoUSA

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device *** of the art in the field is currently a two-step process:a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition(CVD)followed by delicate layer transfer onto device-relevant ***,we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area,high quality,and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer ***(C)ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates.A well-controlled number of layers of graphene,primarily monolayer and bilayer,is precisely controlled by the equivalent fluence of the implanted C-atoms(1 monolayer~4×10^(15)C-atoms/cm^(2)).Upon thermal annealing to promote Cu-Ni alloying,the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in *** a result,the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy *** removing the alloyed Cu-like surface layer,the layer-tunable graphene on the desired substrate is directly *** layer-selectivity,high quality,and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene *** dynamics(MD)simulations using the reactive force field(ReaxFF)were performed to elucidate the graphene formation mechanisms in this novel synthesis *** the wide use of ion

关键词： device applications dual-metal smart Janus substrate growth mechanism Ion implantation layer-tunable and transfer-free graphene

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Impact of distributed Bragg reflectors on the intrinsic detection efficiency of superconducting nanowire single-photon detectors

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Superconductivity 2025年第1期13卷 12-16页

作者： Hongxin Xu Hailong Han You Xiao Jiamin Xiong Chaomeng Ding Zhiyun Shu Yuchi Li Xiaoyu Liu Lixing You Zhen Wang Hao Li Shanghai Key Laboratory of Superconductor Integrated Circuit Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Shanghai Research Center for Quantum Sciences Shanghai 201315China

In this study,we investigate the impact of substrates with distributed Bragg reflectors(DBRs)on the proximity effect during the fabrication of superconducting nanowire single-photon detectors(SNSPDs)using electron beam *** compare the linewidth compression and line edge roughness of nanowires prepared on three different DBRs ***,we characterize the variations in switching current(I_(sw))and intrinsic detection efficiency(IDE)at a 2.2-K *** results show that when the substrates are composed of low atomic number materials,such as Si and SiO2,the proximity effect is significantly *** a consequence,the lithography quality of nanowires is effectively improved,thus enhancing the IDE of *** study is expected to provide new insights into the fabrication of SNSPDs and lay the foundation for the preparation of high-performance and high-uniformity large-area devices.

关键词： Superconducting nanowire single-photon detector Distributed Bragg reflector Proximity effect

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Excitation orthogonalized upconversion nanoprobe for instant visual detection of trinitrotoluene

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Nano Research 2023年第1期16卷 1491-1499页

作者： Xu Li Xu Zhao Xiaoyu Xu Yang Lu Jiahang Wu Fangmeng Liu Xu Yan Peng Sun Chenguang Wang Xianggui Kong Xiaomin Liu Geyu Lu State Key Laboratory of Integrated Optoelectronics College of Electronic Science and EngineeringJilin UniversityChangchun 130012China Department of Public Security of Jilin Province Changchun 130051China State Key Laboratory of Luminescence and Applications Changchun Institute of OpticsFine Mechanics and physicsChinese Academy of ScienceChangchun 130033China

Excitation-emission orthogonalized luminescent upconversion nanoparticles(OUCNPs),which can respond to changes in external stimuli accordingly,show great promise in many intelligent ***,the construction of such materials mostly relies on the selective absorption of Nd3+and Yb3+at different wavelengths and the long-range energy migration between the layers,resulting in complex structures and limited orthogonal luminescence ***,we developed a relatively simple structure of OUCNPs(β-NaErF4@NaLuF4@NaYF4:20%Yb,2%Er@NaLuF4),where the fluorescence emission switches from red to green when the excitation wavelength is shifted from 808 to 980 *** structure exhibits high-quality,independent,and non-interfering orthogonal luminescence properties without Nd3+sensitization and long-range energy *** a proof of concept,we demonstrate the application of the designed OUCNPs in *** also prepared OUCNPs@PEI(PEI=polyethylenimine)self-referencing fluorescent probes to enable quantitative analysis of trinitrotoluene(TNT)in solution with a detection limit of 3.04μ*** probes can be made into test strips for portable on-site visual detection of TNT,and can also be used to image latent fingerprints and detect explosive residues in fingerprints *** concept proposed in this work can be extended to the visual detection of a larger range of organic and biological molecules,and is highly promising for practical applications.

关键词： orthogonal luminescence NaErF4 core/multi-shell structure anti-counterfeiting trinitrotoluene(TNT)detection

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Recent advances in one-dimensional alkali-metal hexatitanate photocatalysts for environmental remediation and solar fuel production

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Journal of Materials science & Technology 2024年第35期202卷 201-239页

作者： Qiang Wang Xiaofan Yang Zhao Jing Hong Liu Pengyi Tang Hongmin Zhu Bing Li National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China 2020 X-Lab Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China School of Mechanical and Power Engineering East China University of Science and TechnologyShanghai 200237China Department of Metallurgy Graduate School of EngineeringTohoku UniversitySendai 980-8579Japan

The global energy crisis and environmental problems have become two unprecedented ***-conductor photocatalysis offers a promising strategy to solve them,while its practical application requires advanced photocatalytic *** recent years,one-dimensional(1D)alkali-metal hexatitanate(AHT)photocatalysts have attracted considerable attention in energy and environmental fields due to their high chemical stability,excellent photoactivity,unique ion-exchange,environment-friendly,and cost-effective *** this review,we firstly introduce the basic properties of AHT including crystal and electronic band structure,photoactivity,and structure-property-performance ***,the recent ad-vances in synthesis and modification strategies of 1D AHT photocatalysts are summarized thoughtfully,followed by a comprehensive discussion on their various environmental and energy applications,includ-ing pollutant degradation,H2 generation,and CO_(2)***,the key challenges and prospects are also highlighted for the development of high-performance 1D AHT-based photocatalysts for practi-cal *** hope that this review will shed some light on the rational design of 1D Ti-O-based nanomaterials for efficient environmental remediation and solar fuel production.

关键词： Alkali-metal hexatitanates One-dimensional nanomaterials Photocatalysis Pollutant degradation Solar fuels

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On-chip superconducting nanowire single-photon detectors integrated with pump rejection for entanglement characterization

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Photonics Research 2025年第04期 1067-1073页

作者： ZHIYUN SHU YUCHI LI XIAOYU LIU HAILONG HAN YOU XIAO JIA HUANG HONGXIN XU WEI ZHANG LIXING YOU ZHEN WANG HAO LI Shanghai Key Laboratory of Superconductor Integrated Circuit Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of Sciences Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Frontier Science Center for Quantum Information Electronic Engineering Department Tsinghua University Shanghai Research Center for Quantum Sciences

On-chip superconducting nanowire single-photon detectors (SNSPDs) are gaining traction in integrated quantum photonics due to their exceptional performance and the elimination of fiber coupling loss. However, off-chip high-rejection filters are commonly required to remove the intense pump light employed in quantum states generation, thus remaining the obstacle for embedding SNSPDs into quantum photonic circuits. Here, we explore the integration of SNSPDs with passive pump rejection filters, achieved by cascaded silicon Bragg gratings, on a single substrate.

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Performance of the merged APPLE-Knot undulator for soft x-ray beamline in medium energy ring

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Chinese Physics B 2023年第11期32卷 240-246页

作者：成锐张发远查鹤鸣乔山 National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China

APPLE-Knot undulator can effectively solve the on-axis heat load problem and is proven to perform well in VUV beamline and soft x-ray beamline in high energy storage ring. However, for soft x-ray beamline in a medium energy ring,whether the APPLE-Knot undulator excels the APPLE undulator is still a question. Here, a merged APPLE-Knot undulator is studied to generate soft x-ray in a medium energy ring. Its advantages and problems are discussed. Though the on-axis heat load of the APPLE-Knot undulator is lower in linear polarization modes compared to the APPLE undulator, its flux is lower. The APPLE-Knot undulator shows no advantage when only fundamental harmonic is needed. However, in circular polarization mode, the APPLE-Knot undulator shows the ability to cover a broader energy range which can remedy the notable shortcoming of the APPLE undulator.

关键词： synchrotron radiation APPLE-Knot undulator soft x-ray

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Flexible TiO_(2)-WO_(3−x) hybrid memristorwith enhanced linearity and synaptic plasticity for precise weight tuning in neuromorphic computing

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npj Flexible Electronics 2024年第1期8卷 180-191页

作者： Jianyong Pan Hao Kan Zhaorui Liu Song Gao Enxiu Wu Yang Li Chunwei Zhang Shandong Provincial Key Laboratory of Network Based Intelligent Computing School of Information Science and EngineeringUniversity of JinanJinanChina State Key Lab of Transducer Technology Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghaiChina School of Integrated Circuits Shandong UniversityJinanChina

Tungsten oxide(WO_(3))-based memristors show promising applications in neuromorphic ***,single-layer WO_(3) memristors suffer from issues such as weak memory performance and nonlinear conductance *** this work,a functional layer based on the hybrids of WO_(3−x) and TiO_(2) is proposed for constructing flexible memristors featuring outstanding synaptic *** diverse electrical stimulations to the memristor enables a range of synaptic functions,elucidating its conduction mechanism through the conductive filament *** incorporation of TiO_(2) not only enhances the memristor’s memory characteristics but makes its conductance more linear,symmetrical and uniform during the long-term ***,in view of the enhanced device performance by TiO_(2) doping,the potential of this device for simple behavioral simulation and processing of complex computing problems is ***“learning-forgetting-relearning”characteristics and device integrability are visually *** the device to a convolutional neural network,the recognition accuracy of MNIST handwritten digits reaches 98.7%.

关键词： computing tuning precise

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Cu nanowire array with designed interphases enabling high performance Si anode toward flexible lithium-ion battery

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Nano Research 2024年第3期17卷 1516-1524页

作者： Pengfei Su Ziqi Zhang Linshan Luo Zhiyong Zhang Chaofei Lan Yahui Li Shaowen Xu Shanpeng Pei Guangyang Lin Cheng Li Xiang Han Wei Huang Songyan Chen Fujian Provincial Key Laboratory of Semiconductors and Applications Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient DevicesDepartment of PhysicsXiamen UniversityXiamen 361005China College of Materials Science and Engineering Nanjing Forestry UniversityNanjing 210037China Science and Technology on Analog Integrated Circuit Laboratory Chongqing 400060China Shandong Electric Power Engineering Consulting Institute Co. Ltd.Jinan 250013China

To meet the growing demand for wearable smart electronic devices,the development of flexible lithium-ion batteries(LIBs)is *** is an ideal candidate for the anode material of flexible lithium-ion batteries due to its high specific capacity,low working potential,and earth *** largest challenge in developing a flexible silicon anode is how to maintain structural integrity and ensure stable electrochemical reactions during external *** this work,we propose a novel design for fabricating core–shell electrodes based on a copper nanowire(CuNW)array core and magnetron sputtered Si/C *** nanowire array structure has characteristics of bending under longitudinal stress and twisting under transverse stress,which helps to maintain the mechanical stability of the structure during electrode bending and *** low-temperature annealing generates a small amount of Cu3Si alloy,which enhances the connection strength between Si and the conductive network and solves the poor conductivity problem of Si,which is known as a semiconductor *** unique configuration design of CuNW@Si@C-400℃ leads to stable long cycle performance of 1109 mAh∙g^(-1) after 1000 cycles and excellent rate performance of 500 mAh∙g^(-1) at a current density of 10 A∙g^(-1).Furthermore,the CuNW@Si@C-400℃||LiFePO_(4)(LFP)full battery demonstrates excellent flexibility,with a capacity retention of more than 96%after 100 *** study provides a promising strategy for the development of flexible lithium-ion batteries.

关键词： flexible lithium-ion battery silicon anode magnetron sputtering core–shell electrode Cu nanowire array

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High threshold voltage enhancement-mode GaN p-FET with Sirich LPCVD SiN_(x) gate insulator for high hole mobility

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Journal of Semiconductors 2023年第8期44卷 78-86页

作者： Liyang Zhu Kuangli Chen Ying Ma Yong Cai Chunhua Zhou Zhaoji Li Bo Zhang Qi Zhou State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China Key Laboratory of Nanodevices and Applications Suzhou Institute of Nano-tech and Nano-bionicsCASSuzhou 215123China Institute of Electronic and Information Engineering University of Electronic Science and Technology of ChinaDongguan 523808China

In this work,the GaN p-MISFET with LPCVD-SiN_(x) is studied as a gate dielectric to improve device *** changing the Si/N stoichiometry of SiN_(x),it is found that the channel hole mobility can be effectively enhanced with Si-rich SiN_(x) gate dielectric,which leads to a respectably improved drive current of GaN *** record high channel mobility of 19.4 cm2/(V∙s)was achieved in the device featuring an Enhancement-mode *** from the significantly improved channel mobility,the fabricated E-mode GaN p-MISFET is capable of delivering a decent-high current of 1.6 mA/mm,while simultaneously featuring a negative threshold-voltage(VTH)of–2.3 V(defining at a stringent criteria of 10μA/mm).The device also exhibits a well pinch-off at 0 V with low leakage current of 1 nA/*** suggests that a decent E-mode operation of the fabricated p-FET is *** addition,the VTH shows excellent stability,while the threshold-voltage hysteresisΔVTH is as small as 0.1 V for a gate voltage swing up to–10 V,which is among the best results reported in the *** results indicate that optimizing the Si/N stoichiometry of LPCVD-SiN_(x) is a promising approach to improve the device performance of GaN p-MISFET.

关键词： p-channel GaN p-FET LPCVD channel mobility hole mobility enhancement-mode

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