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Surfactant-Assisted Cooperative Self-Assembly of Nanoparticles into Active Nanostructures

iscience 2019年第JANUARY 25, 2019期11卷 272-293页

作者： Wenbo Wei Feng Bai Hongyou Fan Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology School of Materials Science and Engineering Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 China. Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology School of Materials Science and Engineering Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 China. Electronic address: baifengsun@***. Department of Chemical and Biological Engineering The University of New Mexico Albuquerque NM 87131 USA Advanced Materials Laboratory Sandia National Laboratories Albuquerque NM 87106 USA Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque NM 87185 USA. Electronic address: hfan@sandia.gov.

Nanoparticles (NPs) of controlled size, shape, and composition are important building blocks for the next generation of devices. There are numerous recent examples of organizing uniformly sized NPs into ordered arrays or superstructures in processes such as solvent evaporation, heterogeneous solution assembly, Langmuir-Blodgett receptor-ligand interactions, and layer-by-layer assembly. This review summarizes recent progress in the development of surfactant-assisted cooperative self-assembly method using amphiphilic surfactants and NPs to synthesize new classes of highly ordered active nanostructures. Driven by cooperative interparticle interactions, surfactant-assisted NP nucleation and growth results in optically and electrically active nanomaterials with hierarchical structure and function. How the approach works with nanoscale materials of different dimensions into active nanostructures is discussed in details. Some applications of these self-assembled nanostructures in the areas of nanoelectronics, photocatalysis, and biomedicine are highlighted. Finally, we conclude with the current research progress and perspectives on the challenges and some future directions.

关键词： Materials science Nanoparticles Supramolecular Chemistry

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The design and implementation of a reconfigurable convolution operator based on APU

The design and implementation of a reconfigurable convolutio...

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2017 China Semiconductor Technology International Conference, CSTIC 2017

作者： Huang, Yuqian Huang, Jipan Wang, Xin'an Yang, Zhiqiang Lu, Haifang Tian, Miren Key Laboratory of Integrated Micro-System Science and Engineering Applications Peking University Shenzhen Graduate School China

ISBN: (纸本)9781509066940

In order to achieve fast IC design, reduce development cycle and cost, key Lab. of integrated microsystems in Peking University proposed Array Processing for Unification Architecture(APU) which consists of four kinds of operators: computation, data path, control and MEM operators to replace the configurable logic block in current FPGA fabric. In this paper, a reconfigurable convolution operator based on APU, is presented which is used to convolutional neural network computing. The reconfigurable convolution operator is with more coarse-grain and function changeable than APU. And the process of operator synthesis is verified by simulation-based verification and formal verification separately. With the verification method proposed in this paper, certainty and completeness have been achieved. The results show that compared with the hardware design at the cost of resources based APU, this methodology can obtain hardware of suitable performance with regular structure with the cost of 34.08% less area and 25.26% lower power. © 2017 IEEE.

关键词： Neural networks

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Graphene Quantum Dots: Graphene Quantum Dots with Pyrrole N and Pyridine N: Superior Reactive Oxygen Species Generation Efficiency for Metal-Free Sonodynamic Tumor Therapy (Small 10/2021)

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Small 2021年第10期17卷

作者： Siwei Yang Xuelian Wang Peng He Anli Xu Gang Wang Junli Duan Yiqin Shi Guqiao Ding Joint Laboratory of Graphene Materials and Applications State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 P. R. China College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences Beijing 100049 P. R. China Department of Gerontology Xinhua Hospital Shanghai Jiaotong University Shanghai 200092 P. R. China Department of Microelectronic Science and Engineering School of Physical Science and Technology Ningbo University Ningbo 315211 P. R. China Department of Nephrology Zhongshan Hospital Fudan University Shanghai 200032 P. R. China

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Microemulsion-Assisted Self-Assembly and Synthesis of Size-Controlled Porphyrin Nanocrystals with Enhanced Photocatalytic Hydrogen Evolution

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Nano letters 2019年第4期19卷 2614-2619页

作者： Yanqiu Liu Liang Wang Hexiang Feng Xitong Ren Juanjuan Ji Feng Bai Hongyou Fan Key Laboratory for Special Functional Materials of Ministry of Education National & Local Joint Engineering Research Center for High-efficiency Display and Lighting Technology School of Materials Science and Engineering and Collaborative Innovation Center of Nano Functional Materials and Applications Henan University Kaifeng 475004 China. Department of Chemical and Biological Engineering Albuquerque University of New Mexico Albuquerque New Mexico 87106 United States. Center for Integrated Nanotechnologies Sandia National Laboratories Albuquerque New Mexico 87185 United States. Advanced Materials Laboratory Sandia National Laboratories Albuquerque New Mexico 87185 United States.

Design and engineering of highly efficient light-harvesting nanomaterial systems to emulate natural photosynthesis for maximizing energy conversion have stimulated extensive efforts. Here we present a new class of photoactive semiconductor nanocrystals that exhibit high-efficiency energy transfer for enhanced photocatalytic hydrogen production under visible light. These nanocrystals are formed through noncovalent self-assembly of In(III) meso-tetraphenylporphine chloride (InTPP) during microemulsion assisted nucleation and growth process. Through kinetic control, a series of uniform nanorods with controlled aspect ratio and high crystallinity have been fabricated. Self-assembly of InTPP porphyrins results in extensive optical coupling and broader coverage of the visible spectrum for efficient light harvesting. As a result, these nanocrystals display excellent photocatalytic hydrogen production and photostability under the visible light in comparison with the commercial InTPP porphyrin powders.

关键词： Self-assembly light-harvesting systems photocatalytic hydrogen evolution porphyrin visible light

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Exploiting Two-Dimensional Bi2O2Se for Trace Oxygen Detection

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Angewandte Chemie 2020年第41期132卷

作者： Xu S. Fu H. Tian Y. Deng T. Cai J. Wu J. Tu T. Li T. Tan C. Liang Y. Zhang C. Liu Z. Chen Y. Jiang Y. Yan B. Peng H. Center for Nanochemistry Beijing Science and Engineering Center for Nanocarbons Beijing National Laboratory for Molecular Sciences College of Chemistry and Molecular Engineering Peking University Beijing 100871 China Department of Condensed Matter Physics Weizmann Institute of Science Rehovot 7610001 Israel International Center for Quantum Materials School of Physics Peking University Beijing 100871 China CAS Center for Excellence in Superconducting Electronics (CENSE) State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology (SIMIT) Chinese Academy of Sciences Shanghai 200050 China University of Chinese Academy of Sciences Beijing 100049 China School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China Tianjin Key Lab for Rare Earth Materials and Applications Center for Rare Earth and Inorganic Functional Materials School of Materials Science and Engineering National Institute for Advanced Materials Nankai University Tianjin 300350 China Academy for Advanced Interdisciplinary Studies Peking University Beijing 100871 China ShanghaiTech Laboratory for Topological Physics ShanghaiTech University Shanghai 201210 China Collaborative Innovation Center of Quantum Matter Beijing 100084 China Department of Physics University of Oxford Oxford OX1 3PU United Kingdom Collaborative Innovation Center of Quantum Matter Beijing 100871 China CAS Center for Excellence in Topological Quantum Computation University of Chinese Academy of Sciences Beijing China

We exploit a high-performing resistive-type trace oxygen sensor based on 2D high-mobility semiconducting Bi2O2Se nanoplates. Scanning tunneling microscopy combined with first-principle calculations confirms an amorphous Se atomic layer formed on the surface of 2D Bi2O2Se exposed to oxygen, which contributes to larger specific surface area and abundant active adsorption sites. Such 2D Bi2O2Se oxygen sensors have remarkable oxygen-adsorption induced variations of carrier density/mobility, and exhibit an ultrahigh sensitivity featuring minimum detection limit of 0.25 ppm, long-term stability, high durativity, and wide-range response to concentration up to 400 ppm at room temperature. 2D Bi2O2Se arrayed sensors integrated in parallel form are found to possess an oxygen detection minimum of sub-0.25 ppm ascribed to an enhanced signal-to-noise ratio. These advanced sensor characteristics involving ease integration show 2D Bi2O2Se is an ideal candidate for trace oxygen detection. © 2020 Wiley-VCH GmbH

关键词： amorphous layers Bi2O2Se integration oxygen sensors two-dimensional materials

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Author Correction: Interstitial boron-doped mesoporous semiconductor oxides for ultratransparent energy storage

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Nature communications 2021年第1期12卷 1489页

作者： Jian Zhi Min Zhou Zhen Zhang Oliver Reiser Fuqiang Huang State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai P. R. China. Institute of Organic Chemistry University of Regensburg Universitätsstr. 31 Regensburg Germany. Hefei National Laboratory for Physical Science at the Microscale Department of Applied Chemistry University of Science and Technology of China Hefei Anhui P. R. China. SCNU-TUE Joint Lab of Device Integrated Responsive Materials (DIRM) South China Normal University Guangzhou China. State Key Laboratory of High-Performance Ceramics and Superfine Microstructure Shanghai Institute of Ceramics Chinese Academy of Sciences Shanghai P. R. China. huangfq@***. Beijing National Laboratory for Molecular Sciences and State Key Laboratory of Rare Earth Materials Chemistry and Applications College of Chemistry and Molecular Engineering Peking University Beijing P. R. China. huangfq@***.

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Magnetic Proximity Effect and Anomalous Hall Effect in Pt/Y3Fe5−xAlxO12 Heterostructures

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Physical Review Applied 2018年第2期10卷 024051-024051页

作者： Xiao Liang Guoyi Shi Longjiang Deng Fei Huang Jun Qin Tingting Tang Chuangtang Wang Bo Peng Cheng Song Lei Bi National Engineering Research Center of Electromagnetic Radiation Control Materials University of Electronic Science and Technology of China Chengdu 610054 China Information Materials and Device Applications Key Laboratory of Sichuan Provincial Universities Chengdu University of Information Technology Chengdu 610225 China State Key Laboratory of Electronic Thin-Films and Integrated Devices University of Electronic Science and Technology of China Chengdu 610054 China Key Laboratory of Advanced Materials (MOE) School of Materials Science and Engineering Tsinghua University Beijing 100084 China

In this paper, we report an experimental and first-principles calculation study on the anomalous Hall effect (AHE) in Pt/Y3Fe5−xAlxO12 bilayer structures. Using a combinatorial pulsed-laser deposition method, we doped Al3+ ions in the Y3Fe5O12 lattice with different concentrations, which preferentially substitute the tetrahedral Fe3+, leading to significant variation of AHE. A monotonic decrease of anomalous Hall resistance RAHE with increasing Al3+ doping concentration is observed at a temperature of 5 K, which scales linearly with the magnetic proximity effect- (MPE-)induced magnetic moments in Pt, as calculated using first-principles calculations. Temperature-dependent RAHE characterizations indicate a sign change in RAHE at around 100 K, which can be explained by a predominant contribution from spin Hall effect-(SHE-)induced AHE at higher temperatures. Our study demonstrates that the band hybridization and exchange coupling between tetrahedral Fe3+ ions and Pt are the major contributors to the magnetic proximity effect in Pt/YIG heterojunctions.

关键词： Anomalous Hall effect Dopants Magnetic interactions Magnetotransport Spin Hall effect Spintronics Magnetic multilayers Transition metal oxides

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Analysis of localization effect in blue-violet light emitting InGaN/GaN multiple quantum wells with different well widths

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Chinese Physics B 2017年第1期26卷 498-502页

作者： Xiang Li De-Gang Zhao De-Sheng Jiang Jing Yang Ping Chen Zong-Shun Liu Jian-Jun Zhu Wei Liu Xiao-Guang He Xiao-Jing Li Feng Liang Jian-Ping Liu Li-Qun Zhang Hui Yang Yuan-Tao Zhang Guo-Tong Du Heng Long Mo Li State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Sciences Beijing 100083 China University of Chinese Academy of Sciences Beijing 100049 China Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences Suzhou 215125 China State Key Laboratory on Integrated Optoelectronics College of Electronic Science and Engineering Jilin University Changchun 130023 China Microsystem & Terahertz Research Center Chinese Academy of Engineering Physics Chengdu 610200 China

Four blue-violet light emitting InGaN/GaN multiple quantum well（MQW） structures with different well widths are grown by metal–organic chemical vapor deposition. The carrier localization effect in these samples is investigated mainly by temperature-dependent photoluminescence measurements. It is found that the localization effect is enhanced as the well width increases from 1.8 nm to 3.6 nm in our experiments. The temperature induced PL peak blueshift and linewidth variation increase with increasing well width, implying that a greater amplitude of potential fluctuation as well as more localization states exist in wider wells. In addition, it is noted that the broadening of the PL spectra always occurs mainly on the low-energy side of the PL spectra due to the temperature-induced band-gap shrinkage, while in the case of the widest well, a large extension of the spectral curve also occurs in the high energy sides due to the existence of more shallow localized centers.

关键词： InGaN/GaN multiple quantum wells localization effect well thickness

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Different influences of u-InGaN upper waveguide on the performance of GaN-based blue and green laser diodes

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Chinese Physics B 2017年第11期26卷 210-215页

作者：梁锋赵德刚江德生刘宗顺朱建军陈平杨静刘炜李翔刘双韬邢瑶张立群李沫张健 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Science College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences Microsystem & Terahertz Research Center Chinese Academy of Engineering Physics

Performances of blue and green laser diodes（LDs） with different u-InGaN upper waveguides（UWGs） are investigated theoretically by using LASTIP. It is found that the slope efficiency（SE） of blue LD decreases due to great optical loss when the indium content of u-InGaN UWG is more than 0.02, although its leakage current decreases obviously. Meanwhile the SE of the green LD increases when the indium content of u-InGaN UWG is varied from 0 to 0.05, which is attributed to the reduction of leakage current and the small increase of optical loss. Therefore, a new blue LD structure with In（0.05） Ga（0.95）N lower waveguide（LWG） is designed to reduce the optical loss, and its slope efficiency is improved significantly.

关键词： GaN-based laser diode slope efficiency waveguide

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Output light power of InGaN-based violet laser diodes improved by using a u-InGaN/GaN/AlGaN multiple upper waveguide

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Chinese Physics B 2017年第12期26卷 302-306页

作者：梁锋赵德刚江德生刘宗顺朱建军陈平杨静刘炜刘双韬邢瑶张立群王文杰李沫张源涛杜国同 State Key Laboratory on Integrated Optoelectronics Institute of Semiconductors Chinese Academy of Science College of Materials Science and Opto-Electronic Technology University of Chinese Academy of Sciences School of Electronic Electrical and Communication Engineering University of Chinese Academy of Sciences Suzhou Institute of Nano-tech and Nano-bionics Chinese Academy of Sciences Microsystem & Terahertz Research Center Chinese Academy of Engineering Physics

The upper waveguide （UWG） has direct influences on the optical and electrical characteristics of the violet laser diode （LD） by changing the optical field distribution or barrier of the electron blocking layer （EBL）. In this study, a series of InGaN-based violet LDs with different UWGs are investigated systematically with LASTIP software. It is found that the output light power （OLP） under an injecting current of 120 mA or the threshold current （Ith） is deteriorated when the UWG is u-In0.02Ga0.98N/GaN or u-In0.02Ga0.98N/AlxGa1-xN （0 ≤ x ≤ 0.1）, which should be attributed to small optical confinement factor （OCF） or severe electron leakage. Therefore, a new violet LD structure with u-In0.02Ga0.98N/GaN/Al0.05Ga0.95N multiple layer UWG is proposed to reduce the optical loss and increase the barrier of EBL. Finally, the output light power under an injecting current of 120 mA is improved to 176.4 mW.

关键词： InGaN-based violet LDs u-InGaN/GaN/AlGaN multiple upper waveguide

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