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International Electron devices Meeting (IEDM)

作者： Wanqing Meng Feifan Xu Xue Shen Tao Tao Zhihao Yu Kaichuan Wen Jianpu Wang Feng Qin Xuecou Tu Jing Ning Dong Wang Youdou Zheng Bin Liu Rong Zhang Yi Shi Xinran Wang National Laboratory of Solid State Microstructures School of Electronic Science and Engineering and Collaborative Innovation Center of Advanced Microstructures Nanjing University Nanjing China Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials Nanjing China School of Microelectronics Xidian University Xi'an China College of Electronic and Optical Engineering & College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing China Key Laboratory of Flexible Electronics (KLOFE) & Institution of Advanced Materials (IAM) Jiangsu National Synergetic Innovation Center for Advanced Materials (SICAM) Nanjing Tech University Nanjing Jiangsu China Tianma Microelectronics Co. LTD Shanghai China Microfabrication and Integration Technology Center Nanjing University Nanjing China Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices Xiamen University Xiamen China Tan Kah Kee Innovation Laboratory Institute of future display technology Xiamen China

ISBN: (纸本)9781665425735

Using low-temperature back end of line (BEOL) process, we realize 3D monolithic ultra-high-resolution $\mu$ -LED displays driven by large-area CVD MoS 2 thin-film transistors (TFTs). The MoS 2 transistors exhibit maximum and median mobility of 73 and 54 cm 2 V −1 s −1 , drive current over 200 $\mu \mathrm{A}/\mu \mathrm{m}$ , and excellent uniformity by systematic process innovation and optimization. Benefiting from high-performance TFT, the individual TFT-LED (1T-1D) cell delivers low operating voltage and high luminance of $7.1\times 10^{7}$ cd/m 2 , which satisfies various display applications to the high resolution and brightness limit. We further demonstrate prototypical $32\times 32$ active-matrix (AM) displays at 1270 PPI resolution.

关键词： Three-dimensional displays Two dimensional displays Computer architecture Pulse width modulation Thin film transistors Sulfur Indexes

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Research on Kalman Filter for One-dimensional Discrete Data

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Journal of Physics: Conference Series 2021年第1期2005卷

作者： Fan Wei Zupei Zhang Kunpeng Jia School of Computing Xi'an Shiyou University Xi'an Shanxi 710065 China Key Laboratory of Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

Kalman filter processes the input and observation signals with noise on the basis of linear state space representation to obtain the system state or real signal. In the one-dimensional model, due to the lack of multi-dimensional description of the target, the prior estimate of the state is often the measured value of the previous moment. When the target state changes, the divergence phenomenon will occur. Aiming at the problem that the one-dimensional traditional Kalman filter lacks the target observation dimension, which leads to the divergence or imprecision of the filter, this paper focuses on improving the estimation method of the target state, and proposes a real-time prediction model based on the cascade structure. This model can improve the response of Kalman filter to the change of target state and dynamically adjust the Kalman iterative domain to improve the measurement accuracy. The digital signal filtering simulation is carried out and the performance of the filter is verified based on LabVIEW. Experimental results show that the algorithm can maintain the accuracy and real-time performance of filtering when only one dimension observation results are obtained.

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technology Roadmap for Flexible Sensors

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ACS NANO 2023年第6期17卷 5211-5295页

作者： Luo, Yifei Abidian, Mohammad Reza Ahn, Jong-Hyun Akinwande, Deji Andrews, Anne M. Antonietti, Markus Bao, Zhenan Berggren, Magnus Berkey, Christopher A. Bettinger, Christopher John Chen, Jun Chen, Peng Cheng, Wenlong Cheng, Xu Choi, Seon-Jin Chortos, Alex Dagdeviren, Canan Dauskardt, Reinhold H. Di, Chong-an Dickey, Michael D. Duan, Xiangfeng Facchetti, Antonio Fan, Zhiyong Fang, Yin Feng, Jianyou Feng, Xue Gao, Huajian Gao, Wei Gong, Xiwen Guo, Chuan Fei Guo, Xiaojun Hartel, Martin C. He, Zihan Ho, John S. Hu, Youfan Huang, Qiyao Huang, Yu Huo, Fengwei Hussain, Muhammad M. Javey, Ali Jeong, Unyong Jiang, Chen Jiang, Xingyu Kang, Jiheong Karnaushenko, Daniil Khademhosseini, Ali Kim, Dae-Hyeong Kim, Il-Doo Kireev, Dmitry Kong, Lingxuan Lee, Chengkuo Lee, Nae-Eung Lee, Pooi See Lee, Tae-Woo Li, Fengyu Li, Jinxing Liang, Cuiyuan Lim, Chwee Teck Lin, Yuanjing Lipomi, Darren J. Liu, Jia Liu, Kai Liu, Nan Liu, Ren Liu, Yuxin Liu, Yuxuan Liu, Zhiyuan Liu, Zhuangjian Loh, Xian Jun Lu, Nanshu Lv, Zhisheng Magdassi, Shlomo Malliaras, George G. Matsuhisa, Naoji Nathan, Arokia Niu, Simiao Pan, Jieming Pang, Changhyun Pei, Qibing Peng, Huisheng Qi, Dianpeng Ren, Huaying Rogers, John A. Rowe, Aaron Schmidt, Oliver G. Sekitani, Tsuyoshi Seo, Dae-Gyo Shen, Guozhen Sheng, Xing Shi, Qiongfeng Someya, Takao Song, Yanlin Stavrinidou, Eleni Su, Meng Sun, Xuemei Takei, Kuniharu Tao, Xiao-Ming Tee, Benjamin C. K. Thean, Aaron Voon-Yew Trung, Tran Quang Wan, Changjin Wang, Huiliang Wang, Joseph Wang, Ming Wang, Sihong Wang, Ting Wang, Zhong Lin Weiss, Paul S. Wen, Hanqi Xu, Sheng Xu, Tailin Yan, Hongping Yan, Xuzhou Yang, Hui Yang, Le Yang, Shuaijian Yin, Lan Yu, Cunjiang Yu, Guihua Yu, Jing Yu, Shu-Hong Yu, Xinge Zamburg, Evgeny Zhang, Haixia Zhang, Xiangyu Zhang, Xiaosheng Zhang, Xueji Zhang, Yihui Zhang, Yu Zhao, Siyuan Zhao, Xuanhe Zheng, Yuanjin Zheng, Yu-Qing Zheng, Zijian Zhou, Tao Zhu, Bowen Zhu, Ming Zhu, Rong Zhu, Yangzhi Zhu, Yong Zou, Guijin Chen, Xiaodong 08-03 Innovis Singapore 138634 Republic of Singapore Innovative Centre for Flexible Devices (iFLEX) School of Materials Science and Engineering Nanyang Technological University Singapore 639798 Singapore Department of Biomedical Engineering University of Houston Houston Texas 77024 United States School of Electrical and Electronic Engineering Yonsei University Seoul 03722 Republic of Korea Department of Electrical and Computer Engineering The University of Texas at Austin Austin Texas 78712 United States Microelectronics Research Center The University of Texas at Austin Austin Texas 78758 United States Department of Chemistry and Biochemistry California NanoSystems Institute and Department of Psychiatry and Biobehavioral Sciences Semel Institute for Neuroscience and Human Behavior and Hatos Center for Neuropharmacology University of California Los Angeles Los Angeles California 90095 United States Colloid Chemistry Department Max Planck Institute of Colloids and Interfaces 14476 Potsdam Germany Department of Chemical Engineering Stanford University Stanford California 94305 United States Laboratory of Organic Electronics Department of Science and Technology Campus Norrköping Linköping University 83 Linköping Sweden Wallenberg Initiative Materials Science for Sustainability (WISE) and Wallenberg Wood Science Center (WWSC) SE-100 44 Stockholm Sweden Department of Materials Science and Engineering Stanford University Stanford California 94301 United States Department of Biomedical Engineering and Department of Materials Science and Engineering Carnegie Mellon University Pittsburgh Pennsylvania 15213 United States Department of Bioengineering University of California Los Angeles Los Angeles California 90095 United States School of Chemistry Chemical Engineering and Biotechnology Nanyang Technological University Singapore 637457 Singapore Nanobionics Group Department of Chemical and Biological Engineering Monash University Clayton Australia 3800 Monash

Humans rely increasingly on sensors to address grand challenges and to improve quality of life in the era of digitalization and big data. For ubiquitous sensing, flexible sensors are developed to overcome the limitations of conventional rigid counterparts. Despite rapid advancement in bench-side research over the last decade, the market adoption of flexible sensors remains limited. To ease and to expedite their deployment, here, we identify bottlenecks hindering the maturation of flexible sensors and propose promising solutions. We first analyze continued...challenges in achieving satisfactory sensing performance for real-world applications and then summarize issues in compatible sensor-biology interfaces, followed by brief discussions on powering and connecting sensor networks. Issues en route to commercialization and for sustainable growth of the sector are also analyzed, highlighting environmental concerns and emphasizing nontechnical issues such as business, regulatory, and ethical considerations. Additionally, we look at future intelligent flexible sensors. In proposing a comprehensive roadmap, we hope to steer research efforts towards common goals and to guide coordinated development strategies from disparate communities. Through such collaborative

关键词： soft materials mechanics engineering flexible electronics conformable sensors bioelectronics human-machine interfaces body area sensor networks technology translation sustainable electronics

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Recovery of cycling-induced endurance failed HfO_x based memristive devices by utilizing oxygen plasma treatment

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Applied Physics Letters 2019年第24期115卷

作者： Wang, Dong Yan, Shaoan Chen, Qilai He, Qiming Li, Gang Xiao, Yongguang Tang, Minghua Zheng, Xuejun School of Mechanical Engineering Xiangtan University Xiangtan Hunan 411105 China Key Laboratory of Welding Robot and Application Technology of Hunan Province School of Mechanical Engineering Xiangtan University Xiangtan Hunan 411105 China Key Laboratory of Microelectronics Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China School of Materials Science and Engineering Xiangtan University Xiangtan Hunan 411105 China

The oxygen ion (O2-) loss effect during resistive switching (RS) cycles will inevitably lead to endurance degradation or even failure in oxide-based memristive devices. In this Letter, we propose an effective way to r...

The oxygen ion (O^2-) loss effect during resistive switching (RS) cycles will inevitably lead to endurance degradation or even failure in oxide-based memristive devices. In this Letter, we propose an effective way to recover the cycling-induced endurance failed HfO_x based memristive devices by utilizing oxygen plasma treatment (OPT). In the as-fabricated Pt/HfO_x/Pt devices, a negative SET event is observed after consecutive normal RS cycles and eventually triggers endurance failure. The appearance of the intermediate resistance state at the initial stage of the negative SET cycle indicates a prominent reduction of the migration barrier of O^2-, which accounts for the occurrence of negative SET after increasing cycles. Then, we recover the devices from endurance failure by moderate OPT, which can supply the available O^2- in RS cycles. More importantly, the first recovered devices after endurance failure can be recovered again through OPT, which better proves the validity of the recovery method. This study could provide an effective approach for understanding and addressing the cycling-induced endurance failure issue in oxide-based memristive devices. © 2019 Author(s).

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A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Analog Bandwidth 10

A 10GS/s 0.13um SiGe Track-and-Hold Amplifier with 38GHz Ana...

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10th International Conference on Microwave and Millimeter Wave technology, ICMMT 2018

作者： Shen, Yu Zhang, Yi Yang, Lei Li, Xiaopeng Liu, Zhonghua Zhang, Yin Guo, Yufeng National and Local Joint Engineering Laboratory of RF Integration and Micro-assembly Technology Nanjing210023 China College of Electronic and Optical Engineering College of Microelectronics Nanjing University of Posts and Telecommunications Nanjing210023 China State Key Laboratory of Millimeter Waves Nanjing210096 China Post-Doctoral Research Center JiangSu HengXin Technology Co. Ltd Yixing214222 China Nanjing Electronic Devices Institute China Nanjing GuoBo Electronics Co. Ltd China

ISBN: (纸本)9781538624166

In this paper, a bipolar track-and-hold amplifier(THA), designed in a 0.13um SiGe technology is presented. A novel output buffer is proposed to enhance the hold-isolation and the bandwidth. The spurious free dynamic range (SFDR) is larger than 53.8dB for 1-3GHz input frequency with a 0.6Vpp input signal. The input bandwidth up to 38GHz is realized with a sampling rate of 10GS/s. The total DC power consumption is 586mW with a supply voltage of -5V. The layout size is 339x210 um2. As compared to the advanced silicon-based THAs, this work features high speed, low total harmonic distortion (THD), good linearity and wide bandwidth. © 2018 IEEE.

关键词： Bandwidth

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Progress in flexible organic thin-film transistors and integrated circuits

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Science Bulletin 2016年第14期61卷 1081-1096页

作者： Congyan Lu Zhuoyu Ji Guangwei Xu Wei Wang Lingfei Wang Zhiheng Han Ling Li Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences

Organic thin-film transistor constructs the headstone of flexible electronic world such as conformable sensor arrays and flexible active-matrix displays. With solutionprocessed methods, it forges ahead toward large-area, lowcost manufacturing goals. As an indispensable complement to traditional silicon-based transistors, organic thin-film field-effect transistors have made great progress in materials,performance, bending capacity, and integrated circuits in recent few years. Flexible transistors and circuitry have extremely promising application prospects and possess irreplaceable status in foldable displays, artificial skins and bendable smart cards. In this review, we will discuss the evolution of flexible organic transistors and integrated circuits in terms of material, fabrication as well as application.

关键词： OTFT Flexibility Integrated circuits

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Tuning the dzyaloshinskii−moriya interaction in pt/co/mgo heterostructures through mgo thickness

arXiv

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arXiv 2017年

作者： Cao, Anni Zhang, Xueying Koopmans, Bert Peng, Shouzhong Zhang, Yu Wang, Zilu Yan, Shaohua Yang, Hongxin Zhao, Weisheng Fert Beijing Institute BDBC School of Electronic and Information Engineering Beihang University Beijing China Centre for Nanoscience and Nanotechnology University Paris-Saclay Orsay France Beihang-Goertek Joint Microelectronics Institute Qingdao Research Institute Beihang University Qingdao China Department of Applied Physics Institute for Photonic Integration Eindhoven University of Technology Eindhoven Netherlands Key Laboratory of Magnetic Materials and Devices Ningbo Institute of Materials Technology and Engineering Chinese Academy of Sciences Ningbo Zhejiang China

The interfacial Dzyaloshinskii−Moriya interaction (DMI) in the ferromagnetic/heavy metal ultra-thin film structures, has attracted a lot of attention thanks to its capability to stabilize Néel-type domain walls (DWs) and magnetic skyrmions for the realization of non-volatile memory and logic devices. In this study, we demonstrate that magnetic properties in perpendicularly magnetized Ta/Pt/Co/MgO/Pt heterostructures, such as magnetization and DMI, can be significantly influenced by the MgO thickness. To avoid the excessive oxidation of Co, an ultrathin Mg layer is inserted to improve the quality of Co-MgO interface. By using field-driven domain wall expansion in the creep regime, we find that non-monotonic tendencies of the DMI field appear when changing the thickness of MgO. With the insertion of a monatomic Mg layer, the strength of DMI could reach a high level and saturates. We conjecture that the efficient control of DMI is a result of subtle changes of both Pt/Co and Co/MgO interfaces, which provides a method to optimize the design of ultrathin structures achieving skyrmion electronics. Copyright © 2017, The Authors. All rights reserved.

关键词： Domain walls

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Cu BEOL compatible selector with high selectivity (> 107), extremely low off-current (∼pA) and high endurance (> 1010) 61

Cu BEOL compatible selector with high selectivity (> 107), e...

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61st IEEE International Electron devices Meeting, IEDM 2015

作者： Luo, Qing Xu, Xiaoxin Liu, Hongtao Lv, Hangbing Gong, Tiancheng Long, Shibing Liu, Qi Sun, Haitao Banerjee, Writam Li, Ling Lu, Nianduan Liu, Ming Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China Lab of Nanofabrication and Novel Devices Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China

ISBN: (纸本)9781467398930

Selector with high nonlinearity and low leakage current is critical to solve the sneaking current issue in crossbar memory array. In this work' we present a high performance Cu BEOL compatible threshold switching (TS) selector with several outstanding features' such as high nonlinearity (∼107)' ultra-low off-state leakage current (∼pA)' robust endurance (> 1010)' and sufficient on-state current density (∼1 MA/cm2). The observed threshold switching is resulted from the spontaneously rupture of conductive filament in doped HfO2 material. By introducing a tunneling layer in series with the TS layer' the leakage current of the selector is dramatically reduced by more than 5 orders of magnitude. The array level benchmark of this TS selector qualifies its promising potential for 3D storage application. © 2015 IEEE.

关键词： Leakage currents

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Cu BEOL compatible selector with high selectivity (>107), extremely low off-current (∼pA) and high endurance (>1010)

Cu BEOL compatible selector with high selectivity (>107), ex...

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International Electron devices Meeting (IEDM)

作者： Qing Luo Xiaoxin Xu Hongtao Liu Hangbing Lv Tiancheng Gong Shibing Long Qi Liu Haitao Sun Writam Banerjee Ling Li Nianduan Lu Ming Liu Lab of Nanofabrication and Novel Devices Integration Technology Chinese Academy of Sciences Beijing China Key Laboratory of Microelectronics Devices and Integrated Technology Chinese Academy of Sciences Beijing China

Selector with high nonlinearity and low leakage current is critical to solve the sneaking current issue in crossbar memory array. In this work, we present a high performance Cu BEOL compatible threshold switching (TS) selector with several outstanding features, such as high nonlinearity (~10 7 ), ultra-low off-state leakage current (~pA), robust endurance (> 10 10 ), and sufficient on-state current density (~1 MA/cm 2 ). The observed threshold switching is resulted from the spontaneously rupture of conductive filament in doped HfO 2 material. By introducing a tunneling layer in series with the TS layer, the leakage current of the selector is dramatically reduced by more than 5 orders of magnitude. The array level benchmark of this TS selector qualifies its promising potential for 3D storage application.

关键词： Very large scale integration Decision support systems Power demand Plugs Hafnium compounds Switches

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Operation methods of resistive random access memory

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Science China(Technological Sciences) 2014年第12期57卷 2295-2304页

作者： WANG Guo Ming LONG Shi Bing ZHANG Mei Yun LI Yang XU Xiao Xin LIU Hong Tao WANG Ming SUN Peng Xiao SUN Hai Tao LIU Qi Lü Hang Bing YANG Bao He LIU Ming Tianjin Key Laboratory of Film Electronic and Communication Devices Tianjin University of Technology Lab of Nanofabrication and Novel Device Integration Institute of Microelectronics Chinese Academy of Sciences

In this paper, different electrical measurement and operation methods of resistive random access memory （RRAM） have been summarized, including voltage sweeping mode （VSM）, current sweeping mode （CSM）, co lstant current stress （CCS）, constant voltage stress （CVS）, rectangular pulse mode （RPM）, and triangle pulse mode （TPM）. Meanwhile, the effects of these meas- urement methods on the forming, set, reset and read operation as well as endurance performance have been compared. Finally, their respective controllability of various resistive switching parameters have been summar zeal and analyzed.

关键词： resistive random access memory operation method voltage sweeping mode current sweeping mode constant currentstress constant voltage stress rectangular pulse mode triangle pulse mode

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