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检索条件"机构=Key Laboratory of Microelectronics Devices and Circuits(MoB)Institute of Microelectronics"
425 条 记 录,以下是111-120 订阅
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A 187-pW 51-ppm/°C Self-Adjusting Voltage Reference Circuit
A 187-pW 51-ppm/°C Self-Adjusting Voltage Reference Circuit
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International Conference on Solid-State and Integrated Circuit Technology
作者: Mingwei ZhU Kaixuan Du Tianqiao Wu Changwu Song Le Ye Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking university Beijing China Information Technology Institute Peking University Tianjin Binhai China
This paper proposed a novel pico-watt voltage reference (VR) circuit for the Internet of Things (IoT) applications. The core circuit consists of purely NMOS transistors operating in the sub-threshold region. This circ... 详细信息
来源: 评论
A wearable wireless bio-medical front-end circuit for monitoring electrophysiological signals  3
A wearable wireless bio-medical front-end circuit for monito...
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3rd International Conference on Biological Information and Biomedical Engineering, BIBE 2019
作者: Yang, Zheng Wang, Jingmin Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China College of Career Technology Hebei Normal University Shijiazhuang China
An ECG readout front-end for long-term sleep monitoring is presented in this paper and features high common-mode rejection ratio (CMRR) and low input referred noise. The proposed front-end circuit composed of an AC co... 详细信息
来源: 评论
Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Performance
Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Perf...
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China Semiconductor Technology International Conference (CSTIC)
作者: Baotong Zhang Xiaokang Li Yuancheng Yang Haixia Li Ru Huang Ming Li Peimin Lu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China College of Physics and Information Engineering Fuzhou University Fuzhou China
In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conven... 详细信息
来源: 评论
Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET
Demonstration of Vertically-stacked CVD Monolayer Channels: ...
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International Electron devices Meeting (IEDM)
作者: Xiong Xiong Anyu Tong Xin Wang Shiyuan Liu Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics Key Laboratory of Microelectronic Devices Circuits (MoE) Peking University Beijing Beijing China Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan China Frontiers Science Center for Nano-Optoelectronics Peking University Beijing China
Vertical stacking of atomic layer thin channel has been challenging due to the top-gate dielectric integration and complicated process, which typically yield in deteriorated performance. In this work, we demonstrate t... 详细信息
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First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design
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Journal of Microelectronic Manufacturing 2020年 第4期3卷 32-39页
作者: Kun Luo Kui Gong Jiangchai Chen Shengli Zhang Yongliang Li Huaxiang Yin Zhenhua Wu Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China IMECAS-MU-HZW joint computing laboratory of Integrated Circuits Beijing 100029China MIIT Key Laboratory of Advanced Display Materials and Devices School of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China.
The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium Green’s function *** dimensional(2D)monol... 详细信息
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TCAD Simulation on Random Telegraphy Noise and Grain-Induced Fluctuation of 3D Nand Cell Transisitors
TCAD Simulation on Random Telegraphy Noise and Grain-Induced...
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China Semiconductor Technology International Conference (CSTIC)
作者: Shijie Hu Ming Li Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA Frontiers Science Center for Nano-optoelectronics Peking University Beijing CHINA
In this work, a TCAD simulation platform was set up to study the real poly-channel modeling, trap-induced noise and random grain doping in 3D NAND cell transistor. The random telegraph noise and size dependence was si... 详细信息
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Highly-Sensitive FET-based Sensor via Heterogeneous Selective-Assembling Integration of Porphyrin and Silicon Nanowires
Highly-Sensitive FET-based Sensor via Heterogeneous Selectiv...
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International Conference on Solid-State and Integrated Circuit Technology
作者: Xiaokang Li Bocheng Yu Gong Chen Ming Li Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Frontiers Science Center for Nano-optoelectronics Peking University Beijing China
In this paper, we proposed and fabricated a novel heterogeneous porphyrin/silicon nanowire transistor-based sensor using CMOS process technology. With the difference in hydrophobicity of Si 3 N 4 and SiO 2 , the enri... 详细信息
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Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition
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Science China Materials 2020年 第6期63卷 1065-1075页
作者: Shike Hu Jing Li Xiaoyi Zhan Shuang Wang Longbiao Lei Yijian Liang He Kang Yanhui Zhang Zhiying Chen Yanping Sui Da Jiang Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China
This study reports the growth of aligned monolayer molybdenum disulfide(MoS2)ribbons on a sapphire substrate via NaOH-assisted chemical vapor *** length of MoS2 ribbon is up to 400μ*** MoS2 ribbon has excellent singl... 详细信息
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In-memory search with learning to hash based on resistive memory for recommendation acceleration
npj Unconventional Computing
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npj Unconventional Computing 2024年 第1期1卷 1-9页
作者: Fei Wang Woyu Zhang Zhi Li Rui Bao Xiaoxin Xu Chunmeng Dou Dashan Shang Ning Lin Zhongrui Wang Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Department of Electrical and Engineering the University of Hong Kong Hong Kong China ACCESS - AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong China School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China
Similarity search is essential in current artificial intelligence applications and widely utilized in various fields, such as recommender systems. However, the exponential growth of data poses significant challenges i...
来源: 评论
Erratum to: CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts
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Science China Information Sciences 2024年 第11期67卷 1-1页
作者: Han, Shihao Liu, Sishuo Du, Shucheng Li, Mingzi Ye, Zijian Xu, Xiaoxin Li, Yi Wang, Zhongrui Shang, Dashan Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong China ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong China Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China School of Microelectronics Southern University of Science and Technology Shenzhen China
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