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International Conference on Solid-State and Integrated Circuit Technology

作者： Mingwei ZhU Kaixuan Du Tianqiao Wu Changwu Song Le Ye Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking university Beijing China Information Technology Institute Peking University Tianjin Binhai China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

This paper proposed a novel pico-watt voltage reference (VR) circuit for the Internet of Things (IoT) applications. The core circuit consists of purely NMOS transistors operating in the sub-threshold region. This circuit contains a high-precision, high-power VR circuit (VRH) and a low-power, low-accuracy adjustable VR circuit (VRL). After initialization, the output voltage of VRL is adjusted based on the output voltage of VRH automatically. VRH is turned off to save energy when adjustment is completed. After waiting a period of time, VRH is turned on again to calibrate the output voltage of VRL. Thus, with self-adjusting topology, our proposed circuit achieves high accuracy and low power consumption. The output voltage is 168.5mV, while the power consumption is only 187pW and the temperature coefficient (TC) is 51 ppm/°C from -40°C to 85°C.

关键词： Voltage control Power demand MOS devices Very large scale integration Transistors Temperature control Voltage measurement

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A wearable wireless bio-medical front-end circuit for monitoring electrophysiological signals 3

A wearable wireless bio-medical front-end circuit for monito...

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3rd International Conference on Biological Information and Biomedical Engineering, BIBE 2019

作者： Yang, Zheng Wang, Jingmin Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China College of Career Technology Hebei Normal University Shijiazhuang China

ISBN: (纸本)9783800750269

An ECG readout front-end for long-term sleep monitoring is presented in this paper and features high common-mode rejection ratio (CMRR) and low input referred noise. The proposed front-end circuit composed of an AC coupled chopping instrumentation amplifier (CCIA), a SC-filter and a 10 bit SAR ADC. The proposed circuit, built in standard 0.18μm CMOS technology, consumes 1.6 μW from 0.5 V. According to the simulation, the AC coupled IA's CMRR is over 90 dB and input referred noise is merely l.28 μVrms. With the input impedance boost loop, a constant 2.4GO input impedance is achieved (@ typical condition). With the chip, for ECG sensor data, a QRS detection algorithm for heart beat rate calculation is implemented to demonstrate smartphone computation feasibility for real-time signal processing. © VDE VERLAG GMBH · Berlin · Offenbach.

关键词： Electrocardiograms

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Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Performance

Impact of Nanopillar-Type Electrode on HFOx -Based RRAM Perf...

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China Semiconductor Technology International Conference (CSTIC)

作者： Baotong Zhang Xiaokang Li Yuancheng Yang Haixia Li Ru Huang Ming Li Peimin Lu Key Laboratory of Microelectronic Devices and Circuits Institute of Microelectronics Peking University Beijing China College of Physics and Information Engineering Fuzhou University Fuzhou China

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, the performance of HfOx-based RRAM with 30nm nanopillar-type electrode was investigated. Experiment results show that the novel device has lower operation voltages and higher resistance ratio than conventional flat electrode RRAM. The underlying physical mechanism is attributed to the enhanced electric field by the nanopillar electrode. This research will provide a valuable guidance for future scaling of oxide-based RRAM.

关键词： Electrodes Performance evaluation Resistance Electric potential Switches Hafnium compounds Electric fields

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Demonstration of Vertically-stacked CVD Monolayer Channels: MoS2 Nanosheets GAA-FET with Ion>700 µA/µm and MoS2/WSe2 CFET

Demonstration of Vertically-stacked CVD Monolayer Channels: ...

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International Electron devices Meeting (IEDM)

作者： Xiong Xiong Anyu Tong Xin Wang Shiyuan Liu Xuefei Li Ru Huang Yanqing Wu Institute of Microelectronics Key Laboratory of Microelectronic Devices Circuits (MoE) Peking University Beijing Beijing China Wuhan National High Magnetic Field Center Huazhong University of Science and Technology Wuhan China Frontiers Science Center for Nano-Optoelectronics Peking University Beijing China

ISBN: (纸本)9781665425735

Vertical stacking of atomic layer thin channel has been challenging due to the top-gate dielectric integration and complicated process, which typically yield in deteriorated performance. In this work, we demonstrate the 2-monolayer-MoSc-stacked nanosheets with a sequentially layer-by-layer fabrication process using a gate-a11-around fashion. Compared with the 1-channel back-gate transistor, the 2-channel stacked nanosheets (SN) transistor exhibits more than twice of gm improvement. The high I on >400 µA/µm per channel footprint at V d = 1 V is achieved due to short gate length of 100 nm, and low contact resistance of 0.77 k Ω*µm. Statistics of hundreds of devices with various channel lengths show the performance evolution trend and monolithic integration potential based on the large-scale CVD -grown 2D materials. Furthermore, the vertical-stacked MoS 2 /WSe 2 complementary FETs (CFETs) based on CVD grown are also demonstrated for the first time with about 50% footprint reduction, as compared to the planar devices.

关键词： Performance evaluation Stacking Monolithic integrated circuits Logic gates Ions Contact resistance Market research

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First-principles Simulations of Tunneling FETs Based on van der Waals MoTe2/SnS2 Heterojunctions with Gate-to-drain Overlap Design

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Journal of Microelectronic Manufacturing 2020年第4期3卷 32-39页

作者： Kun Luo Kui Gong Jiangchai Chen Shengli Zhang Yongliang Li Huaxiang Yin Zhenhua Wu Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics of Chinese Academy of SciencesBeijing 100029China IMECAS-MU-HZW joint computing laboratory of Integrated Circuits Beijing 100029China MIIT Key Laboratory of Advanced Display Materials and Devices School of Materials Science and EngineeringNanjing University of Science and TechnologyNanjing 210094China.

The electronic properties and transport properties of MoTe2/SnS2 heterostructure Tunneling FETs are investigated by the density functional theory coupled with non-equilibrium Green’s function *** dimensional(2D)monolayer MoTe2 and SnS2 are combined to a vertical van der Waals heterojunction.A small staggered band gap is formed in the overlap region,while larger gaps remain in the underlap source and drain regions of monolayer MoTe2 and SnS2 *** a type-II heterojunction is favorable for tunneling ***,we suggest short stack length and large gate-to-drain overlap to enhance the on-state current suppress the leakage current *** numerical results show that at a low drain to source voltage Vds=0.05V,On/Off current ratio can reach 108 and the On-state currents is over 20μA/μm for ntype *** results present that van der Waals heterostructure TFETs can be potential candidate as next generation ultra-steep subthreshold and low-power electronic applications.

关键词： 2D materials heterojunction tunnel-FET gate-to-drain overlap DFT-NEGF.

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TCAD Simulation on Random Telegraphy Noise and Grain-Induced Fluctuation of 3D Nand Cell Transisitors

TCAD Simulation on Random Telegraphy Noise and Grain-Induced...

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China Semiconductor Technology International Conference (CSTIC)

作者： Shijie Hu Ming Li Ru Huang Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing CHINA Frontiers Science Center for Nano-optoelectronics Peking University Beijing CHINA

ISBN: (数字)9781728165585

ISBN: (纸本)9781728165592

In this work, a TCAD simulation platform was set up to study the real poly-channel modeling, trap-induced noise and random grain doping in 3D NAND cell transistor. The random telegraph noise and size dependence was simulated and analyzed. Simulation results show that the RTN and grain size change have greater influence on threshold voltage (V T ) and channel current (I D ) in 3D NAND than doping fluctuation. It is shown that the instability caused by random doping cannot be ignored, too.

关键词： Solid modeling Three-dimensional displays Fluctuations Doping Tools Semiconductor process modeling Transistors

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Highly-Sensitive FET-based Sensor via Heterogeneous Selective-Assembling Integration of Porphyrin and Silicon Nanowires

Highly-Sensitive FET-based Sensor via Heterogeneous Selectiv...

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International Conference on Solid-State and Integrated Circuit Technology

作者： Xiaokang Li Bocheng Yu Gong Chen Ming Li Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University Beijing China Frontiers Science Center for Nano-optoelectronics Peking University Beijing China

ISBN: (数字)9781728162355

ISBN: (纸本)9781728162362

In this paper, we proposed and fabricated a novel heterogeneous porphyrin/silicon nanowire transistor-based sensor using CMOS process technology. With the difference in hydrophobicity of Si 3 N 4 and SiO 2 , the enrichment of porphyrin molecules on silicon nanowires was achieved, and the device showed highly sensitive photo-sensing even under very low illumination power (ΔVt=3.32V @11.3μW/cm 2 ), great dynamic photo-memory characteristic (ΔV t =31.3V @ programming/erasing time of 10s) and excellent temperature sensing (ΔV t =13.6V @ 90°C temperature range). Those performances make the devices applicable to be used in applications of sensitive and smart non-memory light sensing and reliable temperature sensing.

关键词： Nanowires Silicon Sensors Temperature sensors Threshold voltage Sensitivity Transistors

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Aligned monolayer MoS2 ribbons growth on sapphire substrate via NaOH-assisted chemical vapor deposition

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Science China Materials 2020年第6期63卷 1065-1075页

作者： Shike Hu Jing Li Xiaoyi Zhan Shuang Wang Longbiao Lei Yijian Liang He Kang Yanhui Zhang Zhiying Chen Yanping Sui Da Jiang Guanghui Yu Songang Peng Zhi Jin Xinyu Liu State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China Microwave Devices and Integrated Circuits Department Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China

This study reports the growth of aligned monolayer molybdenum disulfide(MoS2)ribbons on a sapphire substrate via NaOH-assisted chemical vapor *** length of MoS2 ribbon is up to 400μ*** MoS2 ribbon has excellent single crystal properties,a carrier mobility of^150 cm^2V^-1s^-1,and a optical response of 103 mA W^-1 at a wavelength of 550 *** growth model of MoS2 ribbons was *** reacts with MoO3 to form sodium molybdate droplets,which increase the fluidity of the molybdenum source on the substrate,realizing the vapor-liquid-solid growth of MoS2 on *** monolayer MoS2 ribbons have two kinds of arrangements on the sapphire substrate,one is the oriented growth affected by the interlayer van der Waals force and the lattice,and the other is the aligned growth constrained by the sapphire *** results promote the basic research and device applications of MoS2,and introduce a new way of synthesizing other one dimensional(1D)and 2D nanostructures.

关键词： MoS2 aligned ribbons vapor-liquid-solid step epitaxy

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In-memory search with learning to hash based on resistive memory for recommendation acceleration

npj Unconventional Computing

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npj Unconventional Computing 2024年第1期1卷 1-9页

作者： Fei Wang Woyu Zhang Zhi Li Rui Bao Xiaoxin Xu Chunmeng Dou Dashan Shang Ning Lin Zhongrui Wang Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China Key Laboratory of Microelectronic Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China University of Chinese Academy of Sciences Beijing 100049 China Department of Electrical and Engineering the University of Hong Kong Hong Kong China ACCESS - AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong China School of Microelectronics Southern University of Science and Technology Shenzhen 518055 China

Similarity search is essential in current artificial intelligence applications and widely utilized in various fields, such as recommender systems. However, the exponential growth of data poses significant challenges in search time and energy consumption on traditional digital hardware. Here, we propose a software-hardware co-optimization to address these challenges. On the software side, we employ a learning-to-hash method for vector encoding and achieve an approximate nearest neighbor search by calculating Hamming distance, thereby reducing computational complexity. On the hardware side, we leverage the resistance random-access memory crossbar array to implement the hash encoding process and the content-addressable memory with an in-memory computing paradigm to lower the energy consumption during searches. Simulations on the MovieLens dataset demonstrate that the implementation achieves comparable accuracy to software and reduces energy consumption by 30-fold compared to traditional digital systems. These results provide insight into the development of energy-efficient in-memory search systems for edge computing.

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Erratum to: CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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Science China Information Sciences 2024年第11期67卷 1-1页

作者： Han, Shihao Liu, Sishuo Du, Shucheng Li, Mingzi Ye, Zijian Xu, Xiaoxin Li, Yi Wang, Zhongrui Shang, Dashan Department of Electrical and Electronic Engineering The University of Hong Kong Hong Kong China ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Hong Kong Science Park Hong Kong China Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Beijing China Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China University of Chinese Academy of Sciences Beijing China School of Microelectronics Southern University of Science and Technology Shenzhen China

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