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检索条件"机构=Key Laboratory of Microelectronics Devices and Circuits(MoE)"
556 条 记 录,以下是1-10 订阅
排序:
Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications
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Science China(Information Sciences) 2023年 第6期66卷 313-314页
作者: Zhongxin LIANG Yang ZHAO Kaifeng WANG Jieyin ZHANG Jianjun ZHANG Ming LI Ru HUANG Qianqian HUANG Key Laboratory of Microelectronics Devices and Circuits (MOE) School of Integrated CircuitsPeking University Key Laboratory of Nanophysics and Devices Institute of PhysicsChinese Academy of Sciences Beijing Advanced Innovation Center for Integrated Circuits
Silicon-based tunneling field effect transistor(TFET) with a band-to-band tunneling mechanism has been widely studied due to its ultra-steep subthreshold swing(SS),ultralow leakage current(Ioff),and good complementary...
来源: 评论
Identification of the different phase structures in hafnium oxide ferroelectric thin films by atomic image simulations
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Progress in Natural Science:Materials International 2025年 第2期35卷 411-419页
作者: Yilin Xu Zhen Yuan Yaru Huang Yunzhe Zheng Tianjiao Xin Cheng Liu Yonghui Zheng Yan Cheng Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (CAS)
Hafnium oxide ferroelectric memory offers non-volatility, low power consumption, fast read-write speed, <1 nm scalability, and CMOS compatibility, making it a promising next-generation nonvolatile memory device. Ho... 详细信息
来源: 评论
Physical investigation of subthreshold swing degradation behavior in negative capacitance FET
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Science China(Information Sciences) 2022年 第6期65卷 241-246页
作者: Mengxuan YANG Qianqian HUANG Kaifeng WANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University
Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs(TFETs) and negative capacitance FETs(NCFETs) can break the subthreshold swing limitation(60 mV/de... 详细信息
来源: 评论
An AND-type 1T-FeFET array with robust write and read operations
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Science China(Information Sciences) 2025年 第2期68卷 395-396页
作者: Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
HfO2-based ferroelectric field-effect transistor(Fe FET) has become a promising solution for next-generation embedded non-volatile memory(NVM) owing to its complementary metal-oxide-semiconductor(CMOS) compatibi... 详细信息
来源: 评论
Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors
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Science China(Information Sciences) 2022年 第6期65卷 277-278页
作者: Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University
Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息
来源: 评论
Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges
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Science China(Information Sciences) 2025年 第6期68卷 118-173页
作者: Xiao YU Ni ZHONG Yan CHENG Tianjiao XIN Qing LUO Tiancheng GONG Jiezhi CHEN Jixuan WU Ran CHENG Zhiyuan FU Kechao TANG Jin LUO Tianling REN Fei XUE Lin CHEN Tianyu WANG Xueqing LI Xiuyan LI Ping WANG Xinqiang WANG Jie SUN Anquan JIANG Peiyuan DU Bing CHEN Chengji JIN Jiajia CHEN Haoji QIAN Wei MAO Siying ZHENG Huan LIU Haiwen XU Can LIU Zhihao SHEN Xiaoxi LI Bochang LI Zheng-Dong LUO Jiuren ZHOU Yan LIU Yue HAO Genquan HAN Hangzhou Institute of Technology Xidian University Faculty of Integrated Circuits Xidian University Key Laboratory of Polar Materials and Devices(MOE) Department of Electronics East China Normal University State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Information Science and Engineering Shandong University College of Integrated Circuit Zhejiang University School of Integrated Circuits Southeast University School of Integrated Circuits Peking University School of Integrated Circuits Tsinghua University Center for Quantum Matter School of Physics Zhejiang University School of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Department of Electronic Engineering Tsinghua University National Key Laboratory of Micro and Nano Fabrication Technology and the Department of Micro-Nano Electronics Shanghai Jiao Tong University State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Hangzhou Huarui Chip Innovation Technology Co. Ltd.
Hafnium(Hf) oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the develop... 详细信息
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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes
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IEEE Microwave and Wireless Technology Letters 2025年 第4期35卷 444-447页
作者: Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China
Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of ... 详细信息
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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts
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Science China(Information Sciences) 2024年 第10期67卷 100-114页
作者: Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology
Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(moe) techniques, exhibiting human-like cognitive... 详细信息
来源: 评论
Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET
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Science China(Information Sciences) 2021年 第2期64卷 271-272页
作者: Zhexuan REN Xia AN Gensong LI Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University
Dear editor,Strain technology has become a common solution in the semiconductor manufacturing industry since 90-nm technology node to overcome the severe carrier mobility degradation of nanoscale microelectronic devic... 详细信息
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Defect physics of the quasi-two-dimensional photovoltaic semiconductor GeSe
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Chinese Physics B 2022年 第11期31卷 60-66页
作者: Saichao Yan Jinchen Wei Shanshan Wang Menglin Huang Yu-Ning Wu Shiyou Chen Key Laboratory of Polar Materials and Devices(MOE)and Department of Electronics East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China
GeSe has recently emerged as a photovoltaic absorber material due to its attractive optical and electrical properties as well as earth abundancy and low ***,the efficiency of GeSe thin-film solar cells(TFSCs)is still ... 详细信息
来源: 评论