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Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications

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Science China(Information Sciences) 2023年第6期66卷 313-314页

作者： Zhongxin LIANG Yang ZHAO Kaifeng WANG Jieyin ZHANG Jianjun ZHANG Ming LI Ru HUANG Qianqian HUANG Key Laboratory of Microelectronics Devices and Circuits (MOE) School of Integrated CircuitsPeking University Key Laboratory of Nanophysics and Devices Institute of PhysicsChinese Academy of Sciences Beijing Advanced Innovation Center for Integrated Circuits

Silicon-based tunneling field effect transistor(TFET) with a band-to-band tunneling mechanism has been widely studied due to its ultra-steep subthreshold swing(SS),ultralow leakage current(Ioff),and good complementary...

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Identification of the different phase structures in hafnium oxide ferroelectric thin films by atomic image simulations

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Progress in Natural Science:Materials International 2025年第2期35卷 411-419页

作者： Yilin Xu Zhen Yuan Yaru Huang Yunzhe Zheng Tianjiao Xin Cheng Liu Yonghui Zheng Yan Cheng Key Laboratory of Polar Materials and Devices (MOE) Department of Electronics East China Normal University State Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology (CAS)

Hafnium oxide ferroelectric memory offers non-volatility, low power consumption, fast read-write speed, <1 nm scalability, and CMOS compatibility, making it a promising next-generation nonvolatile memory device. However, because the ferroelectric phase is not thermodynamically stable, hafnium oxide thin film prepared by atomic layer deposition contains several phases with very similar structures. For example, the orthorhombic and tetragonal phases are nearly indistinguishable when the grain size is small using synchrotron radiation X-ray diffraction, challenging its characterization and mechanism study. In this work, the multi-slice algorithm was utilized to simulate atomic scanning transmission electron microscopy images. For the experimental part,aberration-corrected scanning transmission electron microscopy was employed to acquire high-angle annular dark-field images and annular bright-field images. Based on the results, we proposed that when utilizing specific orientation to distinguish various phases, imaging conditions such as spherical aberration coefficient, tilt angle,film thickness, etc., affect the analysis to some extent. This work lays the foundation for understanding hafniumbased ferroelectric phase structure.

关键词： Atomic image simulation Hafnium oxide ferroelectrics Phase structure identification

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Physical investigation of subthreshold swing degradation behavior in negative capacitance FET

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Science China(Information Sciences) 2022年第6期65卷 241-246页

作者： Mengxuan YANG Qianqian HUANG Kaifeng WANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Power consumption has become one of the bottlenecks limiting the future development of integrated circuits. Tunnel FETs(TFETs) and negative capacitance FETs(NCFETs) can break the subthreshold swing limitation(60 mV/dec at room temperature) of conventional metal-oxide-semiconductor field-effect transistor(MOSFET) to reduce the operating voltage and thus power consumption. However, induced by the band-to-band tunneling mechanism, TFETs have a subthreshold swing degradation issue and relatively low ON current. Although NCFETs with ferroelectric/dielectric gate stack can theoretically maintain a high ON current comparable to conventional MOSFET, the physical origin of sub-60 SS is controversial and the mechanism of switching behavior in NCFET is still not clear. In this work, by experimentally investigating the whole negative differential capacitance process and its gate voltage amplification coefficient, an intrinsic issue of SS degradation with increased gate voltage is also found in NCFET for the first time. Based on the physical investigation and simulation results, it is shown that the intrinsic SS degradation in NCFET is resulting from the instant dielectric polarization response. Both the decrease of dielectric thickness and the increase of dielectric constant may lead to the severer SS degradation, which is not favorable for scaled NCFETs.

关键词： ferroelectric negative differential capacitance effect polarization low power voltage amplification

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An AND-type 1T-FeFET array with robust write and read operations

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Science China(Information Sciences) 2025年第2期68卷 395-396页

作者： Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].

关键词： Ferroelectric devices

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors

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Science China(Information Sciences) 2022年第6期65卷 277-278页

作者： Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息

关键词： Ferroelectric Negative differential capacitance effect Polarization Low power Subthreshold swing

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Ferroelectric materials, devices, and chips technologies for advanced computing and memory applications: development and challenges

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Science China(Information Sciences) 2025年第6期68卷 118-173页

作者： Xiao YU Ni ZHONG Yan CHENG Tianjiao XIN Qing LUO Tiancheng GONG Jiezhi CHEN Jixuan WU Ran CHENG Zhiyuan FU Kechao TANG Jin LUO Tianling REN Fei XUE Lin CHEN Tianyu WANG Xueqing LI Xiuyan LI Ping WANG Xinqiang WANG Jie SUN Anquan JIANG Peiyuan DU Bing CHEN Chengji JIN Jiajia CHEN Haoji QIAN Wei MAO Siying ZHENG Huan LIU Haiwen XU Can LIU Zhihao SHEN Xiaoxi LI Bochang LI Zheng-Dong LUO Jiuren ZHOU Yan LIU Yue HAO Genquan HAN Hangzhou Institute of Technology Xidian University Faculty of Integrated Circuits Xidian University Key Laboratory of Polar Materials and Devices(MOE) Department of Electronics East China Normal University State Key Lab of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences School of Information Science and Engineering Shandong University College of Integrated Circuit Zhejiang University School of Integrated Circuits Southeast University School of Integrated Circuits Peking University School of Integrated Circuits Tsinghua University Center for Quantum Matter School of Physics Zhejiang University School of Microelectronics State Key Laboratory of Integrated Chips and Systems Fudan University Department of Electronic Engineering Tsinghua University National Key Laboratory of Micro and Nano Fabrication Technology and the Department of Micro-Nano Electronics Shanghai Jiao Tong University State Key Laboratory for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics School of Physics Peking University Hangzhou Huarui Chip Innovation Technology Co. Ltd.

Hafnium（Hf） oxide-based ferroelectric materials have emerged as a transformative platform for next-generation non-volatile memory and advanced computing technologies. This review comprehensively examines the development, challenges, and applications of HfO2ferroelectrics, emphasizing their CMOS compatibility, scalability, and robust polarization at nanoscale dimensions. Breakthroughs in doping strategies, stress engineering, and VO control have stabilized the metastable orthorhombic phase, enabling high-performance devices such as ferroelectric RAM（FeRAM）, ferroelectric field-effect transistors（FeFETs）, and ferroelectric tunnel junctions（FTJs）. These devices offer ultrafast switching, low power consumption, and multi-level storage, driving innovations in neuromorphic computing, in-memory processing, and cryogenic systems; nonetheless, they face ongoing challenges in reliability, such as fatigue and imprint effects, and scalability at sub-5 nm technology nodes. Emerging frontiers, such as wurtzite-structured nitrides（e.g., AlScN） and antiferroelectric ZrO2-based systems, have garnered significant attention due to their exceptionally high remanent polarization and promising potential for enhanced endurance, respectively. Further addressing the reliability issues of these emerging ferroelectric materials and the challenges associated with large-scale integration processes through interdisciplinary efforts will unlock the full potential of ferroelectric technologies, positioning them as pivotal enablers of post-Moore computing architectures and sustainable AI-driven applications.

关键词： ferroelectric HfO$_{2}$ zirconium oxide ZrO$_{2}$ wurtzite AlScN FeRAM FeFET

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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

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IEEE Microwave and Wireless Technology Letters 2025年第4期35卷 444-447页

作者： Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China

Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of 0.32 V, a cutoff frequency (fT) of 139.47 GHz, a breakdown voltage (Vb) of 30 V, and fT × Vb/Von figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting. © 2023 IEEE.

关键词： Gallium nitride

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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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Science China(Information Sciences) 2024年第10期67卷 100-114页

作者： Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology

Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(moe) techniques, exhibiting human-like cognitive skills. As a promising hardware solution for edge moe implementations, the computing-in-memory(CIM) architecture collocates memory and computing within a single device, significantly reducing the data movement and the associated energy consumption. However, due to diverse edge application scenarios and constraints, determining the optimal network structures for moe, such as the expert's location,quantity, and dimension on CIM systems remains elusive. To this end, we introduce a software-hardware co-designed neural architecture search(NAS) framework, CIM-based moe NAS(CMN), focusing on identifying a high-performing moe structure under specific hardware constraints. The results of the NYUD-v2 dataset segmentation on the RRAM(SRAM) CIM system reveal that CMN can discover optimized moe configurations under energy, latency, and performance constraints, achieving 29.67×(43.10×) energy savings,175.44×(109.89×) speedup, and 12.24× smaller model size compared to the baseline moe-enabled Visual Transformer, respectively. This co-design opens up an avenue toward high-performance moe deployments in edge CIM systems.

关键词： mixture-of-experts computing-in-memory neural architecture search resistive random-access memory static random-access memory

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Layout dependence of total-ionizing-dose response in 65-nm bulk Si pMOSFET

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Science China(Information Sciences) 2021年第2期64卷 271-272页

作者： Zhexuan REN Xia AN Gensong LI Xing ZHANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University

Dear editor,Strain technology has become a common solution in the semiconductor manufacturing industry since 90-nm technology node to overcome the severe carrier mobility degradation of nanoscale microelectronic devices [1]. Since layout may affect the stress distribution, layout dependent effect(LDE)becomes a serious issue in advanced technology nodes.

关键词： Information Systems and Communication Service

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Defect physics of the quasi-two-dimensional photovoltaic semiconductor GeSe

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Chinese Physics B 2022年第11期31卷 60-66页

作者： Saichao Yan Jinchen Wei Shanshan Wang Menglin Huang Yu-Ning Wu Shiyou Chen Key Laboratory of Polar Materials and Devices(MOE)and Department of Electronics East China Normal UniversityShanghai 200241China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

GeSe has recently emerged as a photovoltaic absorber material due to its attractive optical and electrical properties as well as earth abundancy and low ***,the efficiency of GeSe thin-film solar cells(TFSCs)is still low compared to the Shockley–Queisser *** defects are believed to play important roles in the electrical and optical properties of GeSe thin ***,we perform first-principles calculations to study the defect characteristics of *** results demonstrate that no matter under the Ge-rich or Se-rich condition,the Fermi level is always located near the valence band edge,leading to the p-type conductivity of undoped *** Se-rich condition,the Ge vacancy(V_(Ge))has the lowest formation energy,with a(0/2–)charge-state transition level at 0.22 eV above the valence band *** high density(above 10^(17)cm^(-3))and shallow level of VGeimply that it is the p-type origin of *** Se-rich growth condition,Seihas a low formation energy in the neutral state,but it does not introduce any defect level in the band gap,suggesting that it neither contributes to electrical conductivity nor induces non-radiative *** addition,Gei introduces a deep charge-state transition level,making it a possible recombination ***,we propose that the Se-rich condition should be adopted to fabricate high-efficiency GeSe solar cells.

关键词： GeSe bulk point defect concentration photovoltaic

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