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10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： He, Meiyu Han, Xingwei Han, Jiayue Guo, Lei Li, Chunyu Han, Chao Yu, He Gou, Jun Wu, Zhiming Wang, Jun School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China No.2006 Xiyuan Ave West Hi-Tech Zone Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

This study presents a dual-band organic photodetector (OPD) enabled by bias switching, which can selectively detect light in both visible and near-infrared (NIR) bands. By introducing P3HT material as a common electrode, the spectral response overlap between the two bands is effectively reduced, achieving high-resolution band separation. This design endows the device with high external quantum efficiency (EQE), high detectivity, and fast response in both the visible and NIR bands. The high-performance dual-band detection characteristics make it suitable for applications in dual-band communication, autonomous driving, and other fields, bringing new opportunities to these applications. © 2025 SPIE.

关键词： Infrared devices

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Observation of diverse soliton patterns in an all-PM linear fiber laser mode-locked by NPE

Observation of diverse soliton patterns in an all-PM linear ...

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2024 Advanced Fiber Laser Conference, AFL 2024

作者： Zhou, Yuanzhu Sun, Yuqi Song, Yi Hou, Yuezhang Yu, Xuanyi Pan, Denian Yang, Yanji Yin, Jiahui Li, Zhili Deng, Chunjian Pan, Xinjian Wang, Tianshu Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices College of Electronic and Information University of Electronic Science and Technology of China Zhongshan Institute Zhongshan528402 China National and Local Joint Engineering Research Center of Space Optoelectronics Technology Changchun University of Science and Technology Changchun130022 China

ISBN: (数字)9781510688889

ISBN: (纸本)9781510688872

We have investigated a stable and flexible all-polarization-maintaining (PM) linear fiber laser mode-locked by nonlinear polarization evolution (NPE). The pulse states are investigated for different net intracavity dispersion values ranging from negative to positive by varying the grating pair distance. A spectral bandwidth of 39.8 nm was obtained with a pulse duration of 1.89 ps at a repetition rate of 147.0 MHz, which can be further compressed to 66 fs. Meanwhile, we have observed harmonic mode-locked solitons and bound state solitons in this linear fiber laser. The second- and third-order harmonic mode-locking were observed with repetition rates of 294.1 MHz and 442.3 MHz. The soliton number inside the bound states decreases from 4 solitons to 1 soliton by reducing the pump power. The results of experiment fully demonstrate that the all-PM NPE mode-locked fiber laser is an ideal platform for investigating soliton dynamics and ultrashort pulses. © 2025 SPIE.

关键词： Mode-locked fiber lasers

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Experimental realization of multi-mode pulse generation in a circular Yb-doped Mamyshev laser at 1030nm

Experimental realization of multi-mode pulse generation in a...

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2024 Advanced Fiber Laser Conference, AFL 2024

作者： Sun, Yuqi Duan, Yunfei Zhou, Yuanzhu Hou, Yuezhang Gu, Xiaoyi Zheng, Jiamin Yin, Jiahui Lin, Xiang Dong, Zhiliang Deng, Chunjian Pan, Xinjian Wang, Tianshu National and Local Joint Engineering Research Center of Space Optoelectronics Technology Changchun University of Science and Technology Changchun130022 China Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices College of Electronic and Information University of Electronic Science and Technology of China Zhongshan Institute Zhongshan528402 China

ISBN: (数字)9781510688889

ISBN: (纸本)9781510688872

We report a Mamyshev laser with mode-locking by seed injection. The laser produced a single pulse with a repetition frequency of 12.1 MHz, obtaining an optimal output spectrum of 41.6 nm. The output pulse width was 6.7 ps, compressed to 44 fs, and the output power reached 830 mW. Stability tests showed an RMS of less than 0.6 %, demonstrating good stability. In addition, bound-state solitons and harmonic mode-locking phenomena were observed in the experiments, and double-pulse, quadruple-pulse and quintuple-pulse bound-state solitons and 2nd-4th harmonic mode-locking were successfully obtained. The compressed pulse widths are all less than 100 fs. © 2025 SPIE.

关键词： Fiber lasers

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Bessel picosecond laser cutting glass-ceramics: optimization of processing point spacing, incident power and burst mode

Bessel picosecond laser cutting glass-ceramics: optimization...

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2024 Advanced Fiber Laser Conference, AFL 2024

作者： Duan, Yunfei Song, Yi Lin, Xiang Huang, Huannan Li, Yueyang Sun, Wangning Li, Zhili Deng, Chunjian Yang, Jianjun Gao, Qingguo Zhang, Zhi Cai, Yi Pan, Xinjian Zhongshan Branch of State Key Laboratory of Electronic Thin Films and Integrated Devices College of Electronic and Information University of Electronic Science and Technology of China Zhongshan Institute Zhongshan528402 China Shenzhen Univ Shenzhen Key Lab Micronano Photon Informat Technol Optoelect Devices & Syst Coll Phys & Optoelect Eng Minist Educ & Guangdong Prov State Key Lab Radio F Shenzhen518060 China

ISBN: (数字)9781510688889

ISBN: (纸本)9781510688872

In recent years, the field of glass ceramics has witnessed rapid advancements, leading to a substantial expansion in their varieties, structures, properties, and application domains. Glass ceramics have found applications in cutting-edge sectors such as astronomy, laser technology, and optoelectronics, solidifying their status as advanced materials. This study aims to investigate the impact of processing parameters on the picosecond laser cutting of glass ceramics to achieve high-quality cuts. A series of cutting experiments were conducted, revealing that processing point spacing, incident laser energy, and the number of pulse trains significantly influence sample processing. Atomic Force Microscopy (AFM) analysis indicates that a processing point spacing of 1 micron facilitates the connection of microholes into an ablative groove, resulting in favorable surface roughness. An optimal number of two pulses yields the most consistent and effective improvement, achieving a local optimum. At an incident laser power of 12.5 W, the lowest average roughness and most uniform ablation are observed, also attaining a local optimum. In this study, glass ceramics with a thickness of 600 nm exhibited superior processing quality, characterized by an average roughness of 219 nm, a local optimal roughness of 208 nm. © 2025 SPIE.

关键词： Glass ceramics

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High-Performance Dual-Gate In-Sn-Zn-O Thin-Film Transistors With Optimized Gate Dielectrics

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IEEE Journal of the Electron devices Society 2025年

作者： Liao, Fuxi Wu, Zijing Lu, Congyan Yang, Guanhua Chen, Kaifei Liu, Menggan Lu, Wendong Mao, Naide Li, Zihan Zhang, Xuanming Zhang, Kaiping Lu, Nianduan Li, Ling University of Science and Technology of China School of Microelectronics Hefei230026 China Institute of Microelectronics of Chinese Academy of Sciences State Key Laboratory of Fabrication Technologies for Integrated Circuits China State Key Laboratory of Fabrication Technologies for Integrated Circuits Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China

*** this study, the effect of the top gate insulator (TGI) deposition conditions on the electrical performance of dual-gate (DG) amorphous InSnZnO (ITZO) thin film transistors (TFTs) is experimentally investigated. It is found that compared to high-temperature deposited TGI, the ITZO TFTs with lower-temperature-deposited (1000C) Al2O3 TGI exhibited an improved electrical characteristic, including higher on/off ratio, lower subthreshold swing (SS), etc. Due to the low bonding energy, the Sn-O bond is easily broken during the high-temperature TGI deposition and then more oxygen vacancies generate, doping the ITZO channel failed to turn off in the switching operation of transistor. Based on these insights, high-performance DG ITZO TFTs are fabricated with optimized TGI, achieving a low sub-threshold swing of 141 mV/decade, an ultrahigh on/off current ratio over 109, a high mobility (μ) of 60.8 cm2/VEs, a small threshold voltage shift (ΔVth) of 0.30 V under positive bias stress (5 V, 3600 s) and a small threshold voltage shift of -0.82 V under negative bias stress (-5 V, 3600 s). © 2013 IEEE.

关键词： Threshold voltage

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High-spatiotemporal-resolution chip analysis using a fiber-coupled quantum sensor based on diamond N-V centers

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Physical Review Applied 2025年第2期23卷 024050-024050页

作者： Youwei Liu Fazhan Zhao Jing Li Zhenfeng Li Lei Wang Bo Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China School of Integrated Circuits University of Chinese Academy of Sciences 101408 Beijing China Communication and Information Engineering Center Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China

We propose a chip analysis method using a fiber-optic quantum sensor based on diamond nitrogen-vacancy (N-V) centers to capture the magnetic field associated with short-pulse currents in chips. The fiber-coupled diamond N-V sensor was precisely positioned at the target region of the chip. We performed real-time monitoring of the N-V center fluorescence responses to pulsing magnetic fields generated by the pulse signals in the test chip through continuous-wave optically detected magnetic resonance. This allowed the accurate reconstruction of the chip internal node signal variations. We successfully achieved a time resolution of 200 ns, which was consistent with the metastable state lifetime of the N-V centers at room temperature. Furthermore, we evaluated the shot noise–limited magnetic sensitivity, which was found to be 6.3nT/Hz1/2. The proposed system exhibited swift responsivity to short pulse currents in the chip, providing highly accurate spatial localization of magnetic field variations. It satisfied the demand for rapid response and precise positioning in chip testing. Overall, this study validates the potential application of N-V centers in the domain of chip security analysis, offering a solution for chip diagnostics.

关键词： Quantum optics

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A Flat-Top Beam Nonuniform Waveguide Slot Antenna Based on Beamforming

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IEEE Antennas and Wireless Propagation Letters 2025年

作者： Pan, Ruiqi Guo, Zixin Luo, Yu Yan, Ningning An, Wenxing Ma, Kaixue Tianjin University Tianjin Key Laboratory of Imaging and Sensing Microelectronic Technology School of Microelectronics Tianjin300072 China Tianjin University Key Laboratory of Organic Integrated Circuit Ministry of Education Tianjin300072 China

This paper presents a nonuniform waveguide slot antenna with a flat-top beam. The radiation from the slot can be regarded as magnetic current radiation. By introducing the mode compression concept, the far-field distribution of the antenna is derived. The desired magnetic current distribution, and hence beamforming, can be achieved by adjusting the relative positions of the slots and their distance from the waveguide centerline. To verify the proposed method, a nonuniform waveguide slot antenna is designed, fabricated, and measured. The measured results are in good agreement with the simulations. The H-plane pattern of the proposed antenna achieves a flat-top beam within the angular range of -40° to 40°, with a variation of less than 2 dB and a beam slope of 0.81 dB/°. © 2002-2011 IEEE.

关键词： Beamforming

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The in-situ parasitic microstructure interface and defect formation mechanism in (010) β-Ga_(2)O_(3) epitaxial film via MOCVD

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Science China Materials 2025年第2期68卷 515-522页

作者： Xianqiang Song Yunlong He Zhan Wang Xiaoli Lu Jing Sun Ying Zhou Yang Liu Jiatong Fan Xiaoning He Xuefeng Zheng Xiaohua Ma Yue Hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology National Engineering Research Center of Wide Band-Gap SemiconductorSchool of MicroelectronicsXidian UniversityXi’an 710071China School of Electronic Engineering Xi’an University of Posts&TelecommunicationsXi’an 710121China Guangzhou Institute of Technology Xidian UniversityGuangzhou 510555China Shaanxi Semiconductor Industry Association Xi’an 710065China

In this study, a typical hillock surface defect wasdiscovered in (010) β-Ga_(2)O_(3) thin films grown by metal-organicchemical vapor deposition (MOCVD), and the morphologyand structure were systematically investigated. The observeddefects exhibit a polygonal shape with a ridge-like hillockalong the [001] direction. Transmission electron microscopy(TEM) microanalysis reveals that polygonal hillock defects arecomposed of twin grains forming an inverted pyramid shapeembedded in the epitaxial layer, which exhibits twofold rotational symmetry along the [100] crystal direction. Theboundary between the defective and perfect lattices appearsband-like, characterized by complex faults, with structuralrelationships between the twin region and the matrix identified as [001]matrix||[010]Defect and {−310}matrix||{−201}Defect. Theorigin of surface defects in the (010) β-Ga_(2)O_(3) homoepitaxiallayers could be attributed not only to the extent of substratedefects but also to epitaxial process conditions. The definitiveexplanation is the localized aggregation of gallium atoms/oxygen vacancies during the growth process, as evidenced byenergy-dispersive X-ray (EDX) analysis and optimized experiments. This work provides brand-new perspectives intothe study of defects in β-Ga_(2)O_(3) epitaxial films, which furtheradvances the application of Ga_(2)O_(3) materials in power devicetechnologies.

关键词： β-Ga_(2)O_(3) MOCVD surface defect

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InterMap-NRTI: A Novel Radio Tomographic Imaging Positioning Model Based on the Intersection Map of Wireless Links

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IEEE Transactions on Vehicular technology 2025年第5期74卷 6954-6965页

作者： Wang, Bobo Ma, Yongtao Zhang, Xianchao Zhang, Jing Huang, Zixuan University of Science and Technology of China School of Cyber Science and Technology Anhui Hefei230027 China Tianjin University School of Microelectronics Tianjin300072 China Jiaxing University Provincial Key Laboratory of Multimodal Perceiving and Intelligent Systems Engineering Research Center of Intelligent Human Health Situation Awareness of Zhejiang Province Jiaxing314001 China University of Science and Technology of China Science Island Branch of Graduate School Anhui Hefei230031 China Institute of Space Integrated Ground Network Anhui Hefei230088 China Zixuan Huang is with the Institute of Space Integrated Ground Network Anhui Hefei230088 China

Device-free localization (DFL) is a potential positioning technique that can localize targets without requiring any device. Radio tomographic imaging (RTI) is one of the most favorable DFL methods and has many advantages over other methods. In multi-target localization indoors, target-affected wireless signal is inevitably contaminated with non-negligible interference of noise and complex multipath. Existing RTI positioning models utilize contaminated signals for multi-target localization, resulting in low positioning performance. To decrease the effect of contaminated signals, we propose a novel RTI positioning model based on the intersection map of wireless links (InterMap-NRTI). InterMap-NRTI utilizes the statistical method to determine wireless links mainly affected by targets and the interpolation method to complement the wireless links that are interrupted due to hardware malfunction and targets' obstruction. The next step is to formulate the definitions to extract high-intersections closest to the target based on the intersection map of target-affected links. Subsequently, we establish a novel positioning model based on signal strengths of wireless links and high-intersections in each cluster determined by DBSCAN algorithm using a saddle surface model. Finally, Hooke-Jeeves method is used to search for the optimal solution of the positioning model. The experiment shows that InterMap-NRTI's accuracy and identification accuracy rate outperforms other methods by an average of more than 30% and more than 14%, respectively, and InterMap-NRTI has a good tolerance for scenario layout. © 2025 IEEE.

关键词： UHF devices

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Dual-Band Low Profile Antenna Design Using HMSIW Based on Through-Glass Vias (TGVs)

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IEEE Antennas and Wireless Propagation Letters 2025年

作者： Li, Shuqi Fang, Zhen Chen, Hongwei Liu, Jinxu Gao, Libin Han, Xiaoshen Li, Shan Zhang, Jihua University of Electronic Science and Technology of China School of Integrated Circuit Science and Engineering State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu610054 China Technology Co. Ltd Dongguan523808 China

This paper presents two dual-band (DB) low profile antenna designs for Ka-band applications, integrating a hybrid structure of a DB-patch and DB-HMSIW resonator, fabricated using Through-Glass Vias (TGVs) technology. The proposed designs achieve DB operation with enhanced bandwidth and gain, all within a single-layer substrate to maintain a compact profile. Ant.1 employs a dual-cavity configuration, while Ant.2 utilizes a single cavity supporting TE100 and TE300 mode. A prototype of Ant.1 was fabricated and tested to validate the design. Measurements demonstrate a -10 dB impedance bandwidth of 25.58–28.26 GHz (10%) for the lower band and 36.83–38.94 GHz (5.5%) for the higher band, with peak gains of 6.1 dBi and 5.6 dBi, respectively. Compared to existing designs, Ant. 1 achieves a lower profile (0.04λ0) in the Ka-band while maintaining competitive performance. This work offers a promising solution for compact and efficient DB antennas in Ka-band communication systems. © 2002-2011 IEEE.

关键词： Bandwidth

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