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Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range

Chinese Journal of Electronics 2025年第1期26卷 137-145页

作者： Yuhao Wang Sen Huang Qimeng Jiang Xinhua Wang Jie Fan Haibo Yin Ke Wei Yingkui Zheng Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences

“Ohmic-before-passivation” process was implemented on ultrathin-barrier AlGaN（<6 nm）/GaN heterostructure to further reduce the ohmic contact resistance（Rc）. In this process, alloyed Ti/Al/Ni/Au ohmic metal was formed first, followed by AlN/SiNxpassivation contributed to restore two-dimensional electron gas（2DEG） in the access region. Due to the sharp change in the concentration of 2DEG at the metal edge, a reduced transfer length consisted with lower Rcare achieved compared to that of ohmic contact on AlGaN（～20 nm）/GaN heterostructure with pre-ohmic recess process. Temperature-dependent current voltage measurements demonstrate that the carrier transport mechanism is dominated by thermionic field emission above 200 K and by field emission below 200 K. The “ohmic-before-passivation” process enables the relative stability of ohmic contacts between 50 K and 475 K and significantly improves the direct current characteristics of GaN-metal-insulator-semiconductor-high electron mobility transistor, offering a promising means for scaling down and enabling the utilization of low-voltage GaN-based power devices in extreme environmental conditions.

关键词： optimal CDG framework telecommunication network routing energy efficient WSN CS compressed sensing diffusion wavelet transform matrix optimal compressed data gathering framework wireless sensor network Measurement matrix telecommunication power management measurement matrix optimization algorithm compressed data measurement sparse representation optimal data aggregation tree algorithm energy consumption trees (mathematics) Compressed sensing (CS) signal representation Wireless sensor networks (WSNs) ODAT algorithm data transmission reduction wavelet transforms wireless sensor networks Optimal data aggregation tree (ODAT) MMOA energy consumption minimization routing technology energy conservation DWTM

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An AND-type 1T-FeFET array with robust write and read operations

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Science China(Information Sciences) 2025年第2期68卷 395-396页

作者： Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].

关键词： Ferroelectric devices

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β-Ga2O3 solar-blind ultraviolet light detector with infinite PDCR

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Science China(Information Sciences) 2025年第4期68卷 160-165页

作者： Haifeng CHEN Xu ZHAO Xiangtai LIU Qin LU Shaoqing WANG Zhan WANG Yifan JIA Yunhe GUAN Lijun LI Yue HAO Key Laboratory of Advanced Semiconductor Devices and Materials School of Electronic EngineeringXi′an University of Posts and Telecommunications State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of MicroelectronicsXidian University

Ultra-high photo-dark current ratio（PDCR） has always been a fascinating indicator for photodetectors. In this paper, the β-Ga2O3solar-blind ultraviolet（UV） light detector with Ni-Ni double Schottky-junctions structure is *** detector has an ultra-high PDCR value exceeding 10～8 under 254 nm UV light irradiation. The physical mechanism behind this phenomenon is to control the current competition between the two Schottky junctions by setting the drain voltage Vdand the source voltage Vs. When the flowing direction of the current in the device is converted, the current balance point B at which the dark current Id（dark）is zero appears during the conversion. Theoretically, at B point, PDCR should be infinite if the photo-current Id（photo）is not 0. In the experiment, B point where Id（dark）is actually 0 is obtained at Vd= 10.1 V in the Vd-Idcurve under Vs= 20 V and Id（photo）at B point is 8.52 μA, so the infinite PDCR realizes at B point. This paper provides new insight into Ga2O3solar blind UV detectors.

关键词： Ga$_{2}$O$_{3}$ PDCR Schottky junction solar-blind ultraviolet photodetector

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

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Science China(Information Sciences) 2025年第1期68卷 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials Laboratory School of Microelectronics Southern University of Science and Technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

关键词： Schottky-MIS cascode anode lateral field-effect diode (LFED) ultralow reverse leakage current ($I_{\rm{LEAK}}$) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

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Ultra-high-Q photonic crystal nanobeam cavity for etchless lithium niobate on insulator(LNOI)platform

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Opto-Electronic Advances 2025年第1期8卷 59-70页

作者： Zhi Jiang Cizhe Fang Xu Ran Yu Gao Ruiqing Wang Jianguo Wang Danyang Yao Xuetao Gan Yan Liu Yue Hao Genquan Han State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China

The expansive spectral coverage and superior optical properties of lithium niobate(LN)offer a comprehensive suite of tools for exploring novel *** high-quality(Q)photonic resonator cavities is crucial for enhancing light-matter ***,this task is challenging as the device performance is heavily dependent on the fabrication quality of the *** this paper,we present experimental validation of an etchless approach to fabricating high-Q photonic crystal nanobeam cavities(PCNBCs).We successfully fabricate PCNBCs with Q factors exceeding 105 while maintaining high transmittance by capitalizing on the low waveguide loss and high fabrication tolerance of TE-polarized ***,the Q factor achieved here exceeds previous reports on etchless LN PCNBCs by over an order of *** from this advancement,we further explore a variety of optical functions,including thermo-optic tuning,optically induced bistability,and Fano line shapes *** findings present promising prospects for a versatile platform technique,facilitating the development of high-performance electro-optic or acousto-optic modulators,optical logic devices,and quantum photonics,highlighting its significant impact in the field of photonic integration.

关键词： photonic crystal nanobeam cavity LNOI platform high Q thermo-optic tuning bistability Fano line shapes

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High-Resolution Tilt Sensor Based on Stripe-Shaped GaN Optoelectronics

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IEEE Sensors Journal 2025年第10期25卷 16950-16956页

作者： Deng, Ganyuan Ye, Zhiyong Huang, Ruoyao Liu, Dongmiao Zhu, Ling Li, Kwai Hei Shenzhen University College of Physics and Optoelectronic Engineering Shenzhen518060 China Shenzhen University State Key Laboratory of Radio Frequency Heterogeneous Integration Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province the College of Physics and Optoelectronic Engineering Shenzhen518060 China Southern University of Science and Technology School of Microelectronics Shenzhen518055 China

Technological advancement has driven a signif icant rise in the demand for compact sensing devices capable of detecting slight angle changes. This work introduces an optical tilt sensor for high-resolution tilt measurement. The GaN-on-sapphire device, with dimensions of 6 × 1.5 × 0.12 mm2, comprises a light-emitting diode (LED) and a pho todetector (PD) monolithically integrated within a single chip. The stripe-shaped device is flip-chip mounted on a printed circuit board and enclosed in an acrylic container with a size of 51 × 10 × 10 mm3, filled with silicone oil. The oil acts as a liquid pendulum, modulating the light that reaches the detector when the sensor is tilted. The experimental evaluation reveals that the GaN tilt sensor exhibits a linear response and a sensitivity of 10.2 µA/◦ within ±6◦, achieving a high resolution of 0.0006◦ and fast response/recovery times of 85/83 ms. A control circuit incorporating a programmable microprocessor is implemented for wireless data transmis sion. These attractive attributes render the developed sensor a promising option for various high-resolution, real-time tilt sensing needs, and its potential for angle monitoring in different practical applications is demonstrated. © 2001-2012 IEEE.

关键词： Sapphire

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One Transistor−One Memristor Integrated Device Based on the Dual Conductive Filament Mechanism

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ACS Applied Electronic Materials 2025年第9期7卷 4095-4102页

作者： Zhao, Liang Pan, Zhidong Zhou, Yao Zhao, Tu Wu, Xuming Huo, Nengjie Guangdong Provincial Key Laboratory of Chip and Integration Technology School of Electronic Science and Engineering School of Microelectronics South China Normal University Foshan528225 China College of Physical Science and Technology Lingnan Normal University Zhanjiang524048 China

The memristors based on the mechanisms of oxygen vacancies or metal ion conduction filament face numerous challenges in terms of cycling stability, power consumption, and high-density integration. To address these challenges, a one transistor−one memristor (1T1R) architecture has been proposed, enabling the integration of data storage and information processing functions. Here, we have designed a 1T1R device combining a WSe2 transistor and an AlxOy/Ag memristor. The oxide AlxOy layer is grown by a thermal oxidation technique that facilitates the formation and disruption of a conductive filament via the synergistic effect of oxygen vacancies and Ag ions. Benefiting from the dual conductive filament mechanism, the device exhibits a low threshold voltage (∼0.82 V), high switching ratio (105), and good retention characteristics (>4000 s);it also demonstrates multilevel storage capability by the gate control on the WSe2 transistor component. This work develops a dual conductive filament-based 1T1R device, offering a device concept for future in-memory computing applications. © 2025 American Chemical Society.

关键词： Threshold voltage

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High-voltage-resistant wafer-scale 4H-SiC ultraviolet photodetector with high uniformity enabled by electric field distribution modulation

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Nano Research 2025年第4期18卷 544-551页

作者： Wanglong Wu Shuo Liu Zhiyuan Liu Xinyun Zhou Xiong Yang Xinyun He Qinglin Xia Mianzeng Zhong Jingbo Li Jun He Hunan Key Laboratory of Nanophotonics and Devices School of PhysicsCentral South UniversityChangsha 410083China Guangdong Provincial Key Laboratory of Chip and Integration Technology School of Semiconductor Science and TechnologySouth China Normal UniversityFoshan 528225China Zhejiang Xinke Semiconductor Co. LtdHangzhou 311421China College of Optical Science and Engineering Zhejiang UniversityHangzhou 310027China

Wide bandgap semiconductors are ideal materials for ultraviolet(UV)photodetectors due to their stable optoelectronic properties and high efficient UV light ***,photodetectors based on pure wide bandgap semiconductors typically have large dark current that inhibit the devices from generating high UV ***,a high-voltage-resistant wafer-scale 4H-SiC UV photodetector enabled by electric field distribution modulation is *** the P+region introduced by the ion implantation process affects the electric field distribution and suppresses the Schottky barrier lowering effect,the dark current of the device reaches pA-level,and remains nA-level at a bias voltage of 1 ***,the device exhibits superior photoresponse,including a prominent responsivity of 105.7 A/W,a remarkable detectivity of 1.01×10^(14) Jones,an outstanding photoconductive gain of 477,and a high light on/off ratio of 1.84×10^(5).This device provides a reliable solution for high-performance UV photodetectors that require high-voltage-resistant in special areas,and the wafer-scale fabrication process makes it feasible for practical applications.

关键词： high-voltage-resistant wafer-scale 4H-SiC electric field distribution ultraviolet photodetector

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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

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IEEE Microwave and Wireless technology Letters 2025年第4期35卷 444-447页

作者： Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China

Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of 0.32 V, a cutoff frequency (fT) of 139.47 GHz, a breakdown voltage (Vb) of 30 V, and fT × Vb/Von figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting. © 2023 IEEE.

关键词： Gallium nitride

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Oxide Phototransistor Array With Multiply-and-Accumulation Functions for In-Sensor Image Processing

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IEEE Journal of the Electron devices Society 2025年 13卷 378-382页

作者： Wang, Saisai Jing, Xiaotao Zhang, Wanlin Wang, Rui Wang, Hong Huang, Qi Westlake Institute for Optoelectronics Zhejiang Key Laboratory of 3D Micro/Nano Fabrication and Characterization Hangzhou311421 China Xidian University State Key Laboratory of Wide Band Gap Semiconductor Devices and Integrated Technology School of Microelectronics Xi’an710071 China

Advanced in-sensor computing paradigm has gradually become a research hotspot in this IOT era of sensor data proliferation. However, most existing in-sensor computing devices are plagued by a complex structure, and the uniformity of the sensor array is difficult to ensure. Moreover, photoconductive devices are incapable of achieving on-chip current summation because the regulation of photoresponsivity usually leads to inconsistent dark current, thereby impeding the practical implementation of artificial neural networks (ANNs) on the sensor array. In this work, we developed a 3 × 3 ultraviolet (UV) image sensor array based on solution-processed indium oxide (In2O3) phototransistors. The devices exhibit tunable responsivity and unified dark current under negative gate voltage (Vgs), enabling the direct execution of multiply-and-accumulation (MAC) operations. Consequently, two key applications of ANN were successfully demonstrated: image convolution and classification. © 2013 IEEE.

关键词： Phototransistors

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