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Excellent structural stability and electrochemical properties of LiNi_0.9Co_0.05Mn_0.05O₂ material by surface Ni²⁺ anchoring and Cs⁺ doping

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Chinese Chemical Letters 2025年第6期36卷

作者： Tang, Hongyu Liu, Dongming Huang, Jinfu Zhang, Liang Tang, Yang Huang, Bin Li, Yanwei Xiao, Shunhua Sun, Yiling Wang, Renheng Guangxi Colleges and Universities Key Laboratory of Surface and Interface Electrochemistry Guangxi Key Laboratory of Electrochemical and Magneto-chemical Functional Materials College of Chemistry and Bioengineering Guilin University of Technology Guilin 541004 China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University) College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen 518060 China Key Laboratory of Advanced Energy Materials Chemistry (Ministry of Education) Nankai University Tianjin 300071 China

The ultra-high nickel cathode material has important application prospect in power lithium-ion batteries. However, the poor structural stability and serious surface/interfacial side reactions during long cycles severely hinder the material's practical application. In this paper, Cs⁺ doping and polymethyl methacrylate (PMMA) coating are used to synergistically modify the NCM955 material. The results show that the corresponding discharge specific capacity of NCMCs-2@P-2 material reaches 152.02 mAh/g at 1 C (1 C = 200 mA/g) and 125.66 mAh/g at 5 C after 300 cycles, and the capacity retention is 78.11 % and 72.21 %, respectively. In addition, it still maintains 156.36 mAh/g discharge specific capacity at 10 C, and these rate and cycle properties exceed those reported on ultra-high nickel cathode material. Moreover, NCMCs-2@P-2 material has higher migration energy barrier of Ni²⁺ and lower migration energy barrier of Li⁺ than that of NCM955 material. Therefore, NCMCs-2@P-2 material has excellent electrochemical properties, which has been proved by a series of structural characterization, theoretical calculation and performance test. The synergistic enhancement of Cs⁺ doping and PMMA coating accelerates lithium ion diffusion kinetics, stabilizes crystal structure, and inhabits surface/interface side reaction. © 2025

关键词： Cs+ doping Electrochemical mechanism Electrochemical performance LiNi0.9Co0.05Mn0.05O2 material PMMA coating

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A 4 GS/s 4 bit ADC with 3.8 GHz analog bandwidth in GaAs HBT technology

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Journal of Semiconductors 2011年第6期32卷 104-110页

作者：吴旦昱周磊郭建楠刘新宇金智陈建武 Institute of Microelectronics Chinese Academy of Sciences Key Laboratory of Microelectronics Devices & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

An ultra-wideband 4 GS/s 4 bit analog-to-digital converter（ADC）which is fabricated in 2-level interconnect, 1.4μm InGaP/GaAs HBT technology is *** ADC has a-3 dB analog bandwidth of 3.8 GHz and an effective resolution bandwidth（ERBW）of 2.6 *** ADC adopts folding-interpolating architecture to minimize its size and complexity.A novel bit synchronization circuit is used in the coarse quantizer to eliminate the glitch codes of the *** measurement results show that the chip achieves larger than 3.4 ENOBs with an input frequency band of DC-2.6 GHz and larger than 3.0 ENOBs within DC-4GHz at 4 GS/*** has 3.49 ENOBs when increasing input power by 4 dB at 6.001 GHz of *** indicates that the ADC has the ability of sampling signals from 1st to 3rd Nyquist zones（DC-6 GHz）.The measured DNL and INL are both less than±0.15 LSB. The ADC consumes power of 1.98 W and occupies a total area of 1.45×1.45 mm^2.

关键词： ADC folding interpolating GaAs ultra-wide-band synchronization

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Materials and underlying principles in vat photopolymerization-based additive manufacturing of electronic ceramics

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Progress in Materials Science 2025年 154卷

作者： Tang, Weizhe Goh, Guo Liang Lee, Jia Min Tang, Yumeng Sun, Chengli Dou, Rui Wang, Li Yeong, Wai Yee Zhang, Xiaosheng Zhang, Yi School of Integrated Circuit Science and Engineering University of Electronic Science and Technology of China Chengdu China School of Mechanical and Aerospace Engineering Nanyang Technological University Singapore Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Chongqing China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China School of Mechanical Engineering Jiangnan University Wuxi China

Electronic ceramics play a pivotal role in electronic devices, such as filters, substrates, and packaging, while serving as integral components of field-responsive devices, such as sensors, transducers, and energy harvesters. However, conventional methods of fabricating electronic ceramics face limitations in size, shape, cost, and efficiency due to growing demand for increased miniaturization and precision. Therefore, considerable attention has been directed towards the development of alternative ceramic progressing methods. Specifically, vat photopolymerization (VPP) additive manufacturing technology features a high spatial resolution and capability of realizing three-dimensional architecture, thus enabling additional functionalities previously unattainable in electronic ceramic devices. Interdisciplinary endeavors are essential for establishing a link between electronic ceramics and VPP. A comprehensive understanding of the underlying principles of electronic ceramics and VPP is essential for their synergistic integration. In this review, electronic ceramics are categorized into dielectrics and semiconductors according to their electronic properties, emphasizing the role of compositional and nano-/microstructural engineering in optimizing their functions. Subsequently, we discuss recent advances in photocurable materials for VPP, considering key factors such including rheology, light propagation, and debinding/sintering processes from both theoretical and experimental perspectives. These insights provide guidelines for formulating photocurable suspensions for electronic ceramic fabrication by VPP. Lastly, we discuss the prospects and challenges of this rapidly evolving field, offering perspectives into future innovations in electronic ceramic additive manufacturing by VPP. © 2025 Elsevier Ltd

关键词： System-in-package

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Resistive switching memory for high density storage and computing

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Chinese Physics B 2021年第5期30卷 26-51页

作者： Xiao-Xin Xu Qing Luo Tian-Cheng Gong Hang-Bing Lv Qi Liu Ming Liu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of the Chinese Academy of SciencesBeijing 100029China

The resistive random access memory(RRAM)has stimulated a variety of promising applications including programmable analog circuit,massive data storage,neuromorphic computing,*** new emerging applications have huge demands on high integration density and low power *** cross-point configuration or passive array,which offers the smallest footprint of cell size and feasible capability of multi-layer stacking,has received broad attention from the research *** such array,correct operation of reading and writing on a cell relies on effective elimination of the sneaking current coming from the neighboring *** target requires nonlinear I-V characteristics of the memory cell,which can be realized by either adding separate selector or developing implicit build-in nonlinear *** performance of a passive array largely depends on the cell nonlinearity,reliability,on/off ratio,line resistance,thermal coupling,*** article provides a comprehensive review on the progress achieved concerning 3D RRAM ***,the authors start with a brief overview of the associative problems in passive array and the category of 3D ***,the state of the arts on the development of various selector devices and self-selective cells are *** parameters that influence the device nonlinearity and current density are outlined according to the corresponding working ***,the reliability issues in 3D array are summarized in terms of uniformity,endurance,retention,and ***,scaling issue and thermal crosstalk in 3D memory array are thoroughly discussed,and applications of 3D RRAM beyond storage,such as neuromorphic computing and CMOL circuit are discussed *** and outlooks are given in the final.

关键词： resistive switching memory(RRAM) three-dimensional(3D)integration reliability computing

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Review of deep ultraviolet photodetector based on gallium oxide

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Chinese Physics B 2019年第1期28卷 126-142页

作者： Yuan Qin Shibing Long Hang Dong Qiming He Guangzhong Jian Ying Zhang Xiaohu Hou Pengju Tan Zhongfang Zhang Hangbing Lv Qi Liu Ming Liu Key Laboratory of Microelectronics Devices&Integration Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029China School of Microelectronics University of Science and Technology of ChinaHefei 230026China University of Chinese Academy of Sciences Beijing 100049China

Ultraviolet(UV) photodetectors(PDs) have drawn great attention in recent years due to their potential application in civil and military fields. Because of its ultrawide bandgap, low cost, strong radiation hardness, and high thermal and chemical stability with high visible-light transparency, Ga_2O_3 is regarded as the most promising candidate for UV ***, the bandgap of Ga_2O_3 is as high as 4.7–4.9 eV, directly corresponding to the solar-blind UV detection band with wavelength less than 280 nm. There is no need of doping in Ga_2O_3 to tune its bandgap, compared to AlGaN, MgZnO,etc, thereby avoiding alloy composition fluctuations and phase separation. At present, solar-blind Ga_2O_3 photodetectors based on single crystal or amorphous Ga_2O_3 are mainly focused on metal–semiconductor–metal and Schottky *** this work, the recent achievements of Ga_2O_3 photodetectors are systematically reviewed. The characteristics and performances of different photodetector structures based on single crystal Ga_2O_3 and amorphous Ga_2O_3 thin film are analyzed and compared. Finally, the prospects of Ga_2O_3 UV photodetectors are forecast.

关键词： gallium oxide ultrawide bandgap ultraviolet(UV) photodetector

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The Role Of Polyacrylamide In Affecting the Electrical Performance of Inox/Pam Composite Thin Film Transistors: From the Perspective of Nanostructure

SSRN

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SSRN 2025年

作者： Zhu, Zhennan Kang, Xiaojiao Wang, Hongcheng Lv, Wei Pan, Qiwen Yao, Rihui Ning, Honglong School of Electrical Engineering and Intelligentization Dongguan University of Technology Dongguan523808 China Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials State Key Laboratory of Luminescent Materials and Devices School of Materials Sciences and Engineering South China University of Technology Guangzhou510640 China The International School of Microelectronics Dongguan University of Technology Dongguan523808 China

The advancement of flexible and printable thin-film transistors (TFTs) is pivotal for next-generation electronics like flexible displays and wearable devices. Indium oxide (InOₓ) shows promise for TFTs due to high electron mobility and solution processability, but its brittleness restricts its flexible application. Doping polymers, such as polyacrylamide (PAM), into InOₓ matrices is a strategy to enhance flexibility. However, the polymer can significantly affect the nanostructure of composite film through its interaction with oxide precursor during film-formation, which in turn affects the performance of device. The internal mechanism of this process is worthy of exploration. This study systematically explored the role of PAM with different molecular weights and concentrations in InOₓ/PAM composite films for TFTs, and a brand-new mechanism has been discovered. It was found that PAM molecular chains have a two-sided effect on carrier transport: inducing InOₓ structure growth to enhance local transport efficiency of carrier while also causing trapping and scattering of carrier. And what is important is that the molecular weight of PAM determined the morphology and distribution of nanocrystal domains in composite films. By optimizing PAM doping concentration as well as molecular weight, appropriate quantity of nanocrystal domains and good interconnection among nanocrystal domains were achieved, enhancing carrier transport and offsetting the negative effect of polymer chains. Overall, this research clarifies the relationship between polymer structure, film nanostructure and device performance, providing valuable guidance for designing composite semiconductor materials for flexible electronics. © 2025, The Authors. All rights reserved.

关键词： Carrier transport

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Determination of the In-Plane Optical Conductivity of Multilayer Graphene Supported on a Transparent Substrate of Finite Thickness from Normal-Incidence Transmission Spectra

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Chinese Physics Letters 2014年第5期31卷 174-178页

作者：谌雅琴 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029

Normal-incidence transmission measurements are commonly used for determining the real part of the in-plane optical conductivities σ1 （ω） of graphene layers. We present an accurate expression for σ1 （ω） in a closed form for a multilayer graphene film supported on a finite-thickness transparent substrate. This form takes into account the coherent and incoherent multiple reflections of the system, whereas the traditional method assumes a semi-infinite substrate. The simulated results for graphene sheets with a layer number N ≤ 10 show that no matter what the transparent substrate is, the accuracy to which σ1 （ω） is determined by applying this expression is improved with no systematic error. Moreover, the layer number N can be exactly determined by simply dividing the σ1 （ω） value of N-layer graphene by the corresponding σ1 （ω） of monolayer graphene, where ωp is the peak frequency of the ordinary dielectric function＇s imaginary part ε1 （ω）of graphene.

关键词： GRAPHENE -- Optical properties RESEARCH OPTICAL conductivity DIELECTRIC function SIGNAL-to-noise ratio OPTICAL spectroscopy

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Structure design and film process optimization for metal-gate stress in 20 nm nMOS devices

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Journal of Semiconductors 2013年第6期34卷 165-169页

作者：付作振殷华湘马小龙柴淑敏高建峰陈大鹏 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The optimizations to metal gate structure and film process were extensively investigated for great metalgate stress（MGS） in 20 nm high-k/metal-gate-last（HKVMG-last） nMOS *** characteristics of advanced MGS technologies on device performances were studied through a process and device simulation by TCAD tools. The metal gate electrode with different stress values（0 to—6 GPa） was implemented in the device simulation along with other traditional process-induced-strain（PIS） technologies like e-SiC and nitride capping *** MGS demonstrated a great enhancing effect on channel carriers transporting in the device as device pitch scaling *** addition,the novel structure for a tilted gate electrode was proposed and relationships between the tilt angle and channel stress were *** with a new method of fully stressed replacement metal gate（FSRMG） and using plane-shape-HfO to substitute U-shape-HfO,the effect of MGS was *** greater film stress in the metal gate,the process conditions for physical vapor deposition（PVD） TiN-x- were *** maximum compressive stress of—6.5 GPa TiN_x was achieved with thinner film and greater RF power as well as about 6 sccm N ratio.

关键词： metal gate stress 20 nm CMOS devices high-k/metal gate PVD TiN_x

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Simulation and characterization of stress in FinFETs using novel LKMC and nanobeam diffraction methods

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Journal of Semiconductors 2015年第8期36卷 174-178页

作者：郭奕栾王桂磊赵超罗军 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

A new simulation method and test instrument has been adopted to verify the traditional stress simulation in FinFET. First, a new algorithm named lattice kinetic Monte Carlo （LKMC） is used to simulate the SiGe epitaxy in source/drain regions and the stress distribution is consequently extracted after the LKMC simulation. Systematic comparison between the traditional polyhedron method and the LKMC method is carried out. The results confirm that extracted stress from both methods is consistent, which verifies the validity of traditional polyhedron method for the purpose of simulating stress in FinFET. In the following experiment, p-type FinFETs with SiGe stressors in source/drain regions are fabricated. The nano beam diffraction （NBD） method is employed to characterize the strain in Si fin. The strain value from the NBD test agrees well with the value extracted from traditional polyhedron simulation.

关键词： stress simulation FinFET NBD verification

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Device parameter optimization for sub-20nm node HK/MG-last bulk FinFETs

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Journal of Semiconductors 2015年第4期36卷 66-69页

作者：许淼殷华湘朱慧珑马小龙徐唯佳张永奎赵治国罗军杨红李春龙孟令款洪培真项金娟高建峰徐强熊文娟王大海李俊峰赵超陈大鹏杨士宁叶甜春 Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

Sub-20 nm node bulk FinFET PMOS devices with an all-last high-k/metal gate （HK/MG） process are fabricated and the influence of a series of device parameters on the device scaling is investigated. The high and thin Fin structure with a tapered sidewall shows better performance than the normal Fin structure. The punch through stop layer （PTSL） and source drain extension （SDE） doping profiles are carefully optimized. The device without SDE annealing shows a larger drive current than that with SDE annealing due to better Si crystal regrowth in the amorphous Fin structure after source/drain implantation. The band-edged MG has a better short channel effect immunity, but the lower effective work function （EWF） MG shows a larger driveability. A tradeoff choice for different EWF MGs should be carefully designed for the device＇s scaling.

关键词： bulk FinFET effective work function （EWF） extension thermal budget metal gate

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