检索结果-内蒙古大学图书馆

Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

Chinese Physics Letters 2018年第5期35卷 110-114页

作者： Zhao-Zhao Hou Gui-Lei Wang Jia-Xin Yao Qing-Zhu Zhang Hua-Xiang Yin Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 University of Chinese Academy of Sciences Beijing 100049

We propose and investigate a novel metal/SiO_2/Si_3N_4/SiO_2/SiGe charge trapping flash memory structure（named as MONOS）, utilizing Si Ge as the buried channel. The fabricated memory device demonstrates excellent programerasable characteristics attributed to the fact that more carriers are generated by the smaller bandgap of Si Ge during program/erase operations. A flat-band voltage shift 2.8 V can be obtained by programming at ＋11 V for 100 us. Meanwhile, the memory device exhibits a large memory window of ~7.17 V under ±12 V sweeping voltage, and a negligible charge loss of 18% after 104 s＇ retention. In addition, the leakage current density is lower than 2.52 × 10^（-7） A·cm^（-2） below a gate breakdown voltage of 12.5 V. Investigation of leakage current-voltage indicates that the Schottky emission is the predominant conduction mechanisms for leakage current. These desirable characteristics are ascribed to the higher trap density of the Si_3N_4 charge trapping layer and the better quality of the interface between the SiO_2 tunneling layer and the Si Ge buried channel. Therefore, the application of the Si Ge buried channel is very promising to construct 3 D charge trapping NAND flash devices with improved operation characteristics.

关键词： FB Improvement of Operation Characteristics for MONOS Charge Trapping Flash Memory with SiGe Buried Channel

来源：评论

学校读者我要写书评

暂无评论

Load-pull measurement analysis of AlGaN/GaN HEMT taking into account number of gate fingers

引用

Journal of Semiconductors 2016年第6期37卷 87-91页

作者：林体元刘果果袁婷婷郑英奎刘新宇 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

This paper investigates load-pull measurement of AlGaN/GaN high electron mobility transistors（HEMTs） at different numbers of gate *** small-signal models are extracted to analyze the relationship between each model＇s parameters and the number of device＇s gate *** simulated S-parameters from the small-signal models are compared with the reflection coefficients measured from the load-pull measurement system at X-band frequencies of 8.8 and 10.4 *** dependency between the number of device＇s gate fingers and load-pull characterization is presented.

关键词： AlGaN/GaN HEMT gate fingers small-signal model load-pull measurement

来源：评论

学校读者我要写书评

暂无评论

Radially and Azimuthally Polarized Beams Generated by a Composite Spiral Zone Plate

引用

Chinese Physics Letters 2012年第8期29卷 135-138页

作者： HUA Yi-Lei WANG Zi-Qiang LI Hai-Liang GAO Nan DU Yu-Chan Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesBeijing 100029

We present a diffractive method for obtaining azimuthal and radially polarized *** method involves a modified half-wave plate,a composite spiral zone plate,a pinhole and a *** composite spiral zone plates are combined and assisted by a pinhole and a lens,to transform a circularly polarized beam into a radially polarized or an azimuthal polarized *** method is investigated numerically using diffraction *** field distributions on the focal spot of the composite spiral zone plates and the output cylindrical beams are ***,the use of this method to generate cylindrical vector beams is validated.

关键词： theory polarized cylindrical

来源：评论

学校读者我要写书评

暂无评论

Design, Fabrication and Test of a Soft X-Ray Even-Order Transmission Grating

引用

Chinese Physics Letters 2009年第9期26卷 81-84页

作者：马杰谢常青刘明陈宝钦叶甜春 Key Laboratory of Nano-Fabrication and Novel Devices Integrated Technology lnstititute of Microelectronics Chinese Academy of Sciences Beijing 100029

Most transmission gratings in the x-ray region work with their first orders and dispersion is limited by the line density achievable with current fabrication technology. We present a novel design of a two-dimensional x-ray transmission grating. The grating works with higher dispersion using its second orders, and the influence from first and third orders can be suppressed. A grating according to the novel design is fabricated and its diffraction performance is tested in comparison with a traditional x-ray transmission grating with the same line density. The novel grating could be especially useful when high dispersion is desired while the fabrication of high-density gratings becomes more difficult.

关键词： sea surface nonliear interaction numerical method

来源：评论

学校读者我要写书评

暂无评论

Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks

引用

Journal of Semiconductors 2016年第5期37卷 48-51页

作者：徐昊杨红王艳蓉王文武万光星任尚清罗维春祁路伟赵超陈大鹏刘新宇叶甜春 Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

The time zero dielectric breakdown characteristics of MOSCAP with ultra-thin EOT high-k metal gate stacks are studied. The TZDB results show an abnormal area dependence due to the series resistance effect. The series resistance components extracted from the Fowler-Nordheim tunneling relation are attributed to the spreading resistance due to the asymmetry electrodes. Based on a series model to eliminate the series resistance effect, an area acceleration dependence is obtained by correcting the TZDB results. The area dependence follows Poisson area scaling rules, which indicates that the mechanism of TZDB is the same as TDDB and could be considered as a trap generation process.

关键词： high-k/metal gate stacks ultra-thin EOT TZDB series resistance effect

来源：评论

学校读者我要写书评

暂无评论

Kink effect in current–voltage characteristics of a GaN-based high electron mobility transistor with an AlGaN back barrier

引用

Chinese Physics B 2014年第2期23卷 452-456页

作者：马晓华吕敏庞磊姜元祺杨靖治陈伟伟刘新宇 School of Advanced Materials and Nanotechnology Xidian University Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices School of MicroelectronicsXidian University Key Laboratory of Microelectronics Device & Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

The kink effect in current-voltage （IV） characteristic s seriously deteriorates the performance of a GaN-based HEMT. Based on a series of direct current （DC） IV measurements in a GaN-based HEMT with an AlGaN back barrier, a possible mechanism with electron-trapping and detrapping processes is proposed. Kink-related deep levels are activated by a high drain source voltage （Vds） and located in a GaN channel layer. Both electron trapping and detrapping processes are accomplished with the help of hot electrons from the channel by impact ionization. Moreover, the mechanism is verified by two other DC IV measurements and a model with an expression of the kink current.

关键词： kink effect deep levels hot electrons GaN-based HEMT

来源：评论

学校读者我要写书评

暂无评论

Atomic-scale observation of d-π-d spin coupling in coordination structures

arXiv

引用

arXiv 2025年

作者： Zhang, Xue Li, Xin Li, Jie Pan, Haoyang Yu, Minghui Zhang, Yajie Zhu, Gui-Lin Xu, Zhen Shen, Ziyong Hou, Shimin Zang, Yaping Wang, Bingwu Wu, Kai Jiang, Shang-Da Castelli, Ivano E. Peng, Lianmao Hedegård, Per Gao, Song Lü, Jing-Tao Wang, Yongfeng Center for Carbon-Based Electronics Key Laboratory for the Physics and Chemistry of Nanodevices School of Electronics Peking University Beijing100871 China Spin-X Institute School of Microelectronics State Key Laboratory of Luminescent Materials and Devices South China University of Technology Guangzhou511442 China Spin-X Institute School of Chemistry and Chemical Engineering South China University of Technology Guangzhou510641 China School of Physics Huazhong University of Science and Technology Wuhan430074 China BNLMS Key Laboratory of Organic Solids Institute of Chemistry Chinese Academy of Sciences Beijing100190 China BNLMS Beijing Key Laboratory of Magnetoelectric Materials and Devices College of Chemistry and Molecular Engineering Peking University Beijing100871 China BNLMS College of Chemistry and Molecular Engineering Peking University Beijing100871 China Spin-X Institute School of Chemistry and Chemical Engineering State Key Laboratory of Luminescent Materials and Devices Guangdong-Hong Kong-Macao Joint Laboratory of Optoelectronic and Magnetic Functional Materials South China University of Technology Guangzhou511442 China Department of Energy Conversion and Storage Technical University of Denmark Kongens LyngbyDK-2800 Denmark Niels Bohr Institute University of Copenhagen CopenhagenDK-2100 Denmark Key Laboratory of Bioinorganic and Synthetic Chemistry Ministry of Education School of Chemistry IGCME GBRCE for Functional Molecular Engineering Sun Yat-Sen University Guangzhou510275 China

Spin coupling between magnetic metal atoms and organic radicals plays a pivotal role in high-performance magnetic materials. The complex interaction involving multi-spin centers in bulk materials makes it challenging to study spin coupling at the atomic scale. Here, we investigate the d-π-d spin interaction in well-defined metal-organic coordinated structures composed of two iron (Fe) atoms and four all-trans retinoic acid (ReA) molecules, using low-temperature scanning tunneling microscopy and atomic force microscopy. The ReA molecule is turned into a spin-1/2 radical state by dehydrogenation, facilitating strong magnetic coupling with the coordinated Fe atoms. Comprehensive theoretical analysis, based on density functional theory and valence bond theory, further elucidates the intrinsic mechanism of ferrimagnetic spin coupling in the coordination structure. Specifically, simultaneous antiferromagnetic coupling of Fe dimer to ReA radicals parallelizes the dimer spin orientation. This work contributes to the fundamental understanding of spin interaction in metal-organic coordination structures and provides microscopic insights for designing advanced magnetic materials. Copyright © 2025, The Authors. All rights reserved.

关键词： Atoms

来源：评论

学校读者我要写书评

暂无评论

Effective gate length model for asymmetrical gate-all-around silicon nanowire transistors

引用

Science China(Information Sciences) 2020年第10期63卷 288-290页

作者： Xiaoqiao DONG Ming LI Wanrong ZHANG Yuancheng YANG Gong CHEN Shuang SUN Jianing WANG Xiaoyan XU Xia AN Key Laboratory of Microelectronic Devices and Circuits Institute of MicroelectronicsPeking University Faculty of Information Technology Beijing University of Technology

Dear editor,With the development of VLSI technology,gateall-around (GAA) silicon nano wire transistor(SNWT) has emerged as one of the most potential candidates for ultimately scaled CMOS devices at the end of the technology *** pioneering research studies have demonstrated super scalability and high performance with GAA SNWT [1-3].Whereas,in the practical fabrica-

关键词： gate-all-around nanowire effective gate length effective model asymmetrical

来源：评论

学校读者我要写书评

暂无评论

Stripping photo-resist with RF dielectric barrier atmospheric pressure plasma

Stripping photo-resist with RF dielectric barrier atmospheri...

引用

2012 Asian Pacific Conference on Energy, Environment and Sustainable Development, APEESD 2012

作者： Jia, Shaoxia Zhao, Lingli Yang, Jinghua Zhang, Chen Wang, Shougou Key Laboratory Microelectronic Devices and Integration Technology Institute of Microelectronics Chinese Academy of Sciences Beijing 100029 China

ISBN: (纸本)9783037855683

A novel radio frequency single-dielectric-barrier-discharge atmospheric pressure plasma generator was designed and utilized to strip AZ9912 photo-resist (PR). Argon (Ar) and oxygen (O2) were employed as the working gases under atmospheric pressure in ambient air. The PR stripping rate was measured as functions of time, input power, and the flow rates of the oxygen/argon. Optical Emission Spectroscopy (OES) was used to measure the optical emission spectra of the plasma to study the mechanism of PR stripping process. It is presumable that C-H bands were broken by high energy electron in the plasma and OH was generated in the process with the participation of O atom. Optical Microscope, Atomic Force Microscope (AFM) and Scanning Electron Microscope (SEM) were used to measure the surface of the silicon substrate after the stripping. It is proved that this kind of novel device could strip the AZ9912 PR effectively as high as 850nm/min, without residues and ion bombardment damage on the wafer substrate. © (2013) Trans Tech Publications, Switzerland.

关键词： Oxygen

来源：评论

学校读者我要写书评

暂无评论

Effect of low temperature annealing on the electrical properties of an MOS capacitor with a HfO_2 dielectric and a TiN metal gate

引用

Journal of Semiconductors 2013年第11期34卷 53-56页

作者：韩锴马雪丽项金娟杨红王文武 Department of Physics and Electronic Science Weifang University Key Laboratory of Microelectronics Devices & Integrated Technology Institute of Microelectronics Chinese Academy of Sciences

Abstract： The effects of low temperature annealing, such as post high-k dielectric deposition annealing （PDA）, post metal annealing （PMA） and forming gas annealing （FGA） on the electrical characteristics of a metal-oxidesemiconductor （MOS） capacitor with a TiN metal gate and a Hf02 dielectric are systematically investigated. It can be found that the low temperature annealing can improve the capacitance-voltage hysteresis performance signifi- cantly at the cost of increasing gate leakage current. Moreover, FGA could effectively decrease the interfacial state density and oxygen vacancy density, and PDA could make the flat band positively shift which is suitable for P-type MOSs. key words： ALD Hf02; TiN; low temperature annealing; hysteresis

关键词： ALD HfO2 TiN low temperature annealing hysteresis

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：