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Enhancing regeneration and functionality of excitable tissues via integrating bioelectronics and bioengineered constructs

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International Journal of Extreme Manufacturing 2025年第02期 125-174页

作者： Zijie Meng Bingsong Gu Cong Yao Jiaxin Li Kun Yu Yi Ding Pei He Nan Jiang Dichen Li Jiankang He Frontier Institute of Science and Technology Xi'an Jiaotong University State Key Laboratory for Manufacturing Systems Engineering Xi'an Jiaotong University National Medical Products Administration (NMPA) Key Laboratory for Research and Evaluation of Additive Manufacturing Medical Devices Xi'an Jiaotong University State Industry-Education Integration Center for Medical Innovations Xi'an Jiaotong University Department of Surgical Oncology Shaanxi Provincial People's HospitalXi'an Jiaotong University

The inherent complexities of excitable cardiac, nervous, and skeletal muscle tissues pose great challenges in constructing artificial counterparts that closely resemble their natural bioelectrical,structural, and mechanical properties. Recent advances have increasingly revealed the beneficial impact of bioelectrical microenvironments on cellular behaviors, tissue regeneration, and therapeutic efficacy for excitable tissues. This review aims to unveil the mechanisms by which electrical microenvironments enhance the regeneration and functionality of excitable cells and tissues, considering both endogenous electrical cues from electroactive biomaterials and exogenous electrical stimuli from external electronic systems. We explore the synergistic effects of these electrical microenvironments, combined with structural and mechanical guidance, on the regeneration of excitable tissues using tissue engineering scaffolds. Additionally, the emergence of micro/nanoscale bioelectronics has significantly broadened this field, facilitating intimate interactions between implantable bioelectronics and excitable tissues across cellular, tissue, and organ levels. These interactions enable precise data acquisition and localized modulation of cell and tissue functionalities through intricately designed electronic components according to physiological needs. The integration of tissue engineering and bioelectronics promises optimal outcomes, highlighting a growing trend in developing living tissue construct-bioelectronic hybrids for restoring and monitoring damaged excitable tissues. Furthermore, we envision critical challenges in engineering the next-generation hybrids, focusing on integrated fabrication strategies, the development of ionic conductive biomaterials, and their convergence with biosensors.

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A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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Science China(Information Sciences) 2020年第2期63卷 245-247页

作者： Yang ZHAO Qianqian HUANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University

Dear editor,As CMOS technology scaling down, the reduction of supply voltage and power consumption becomes extremely difficult due to the subthreshold swing(SS) limitation (60 m V/dec) at room *** FET (TFET) with band-to-band tunneling (BTBT) mechanism is regarded as one of the most promising emerging low-power devices due to its sub-60 m V/dec SS and ultra-low off-current

关键词： A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability FET

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In Situ Tailored Frustrated Lewis Pairs on Asymmetric Bi─O_v─In Motifs Domino-Direct High-Efficiency Urea Electrosynthesis

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Advanced Materials 2025年 e2501851页

作者： Li, Zhengyi Zhang, Yan Li, Hu Zhou, Ming Liang, Jinyan Su, Yaqiong Lu, Xihong Yang, Song State Key Laboratory of Green Pesticide Key Laboratory of Green Pesticide and Agricultural Bioengineering Ministry of Education State-Local Joint Laboratory for Comprehensive Utilization of Biomass Center for R&D of Fine Chemicals Guizhou University Guiyang 550025 China Anhui Provincial Key Laboratory of Advanced Catalysis and Energy Materials School of Chemistry and Chemical Engineering Anqing Normal University Anqing 246011 China MOE of the Key Laboratory of Bioinorganic and Synthetic Chemistry The Key Lab of Low-carbon Chem & Energy Conservation of Guangdong Province School of Chemistry Sun Yat-Sen University Guangzhou 510275 China School of Chemistry Engineering Research Center of Energy Storage Materials and Devices of the Ministry of Education National Innovation Platform (Center) for Industry-Education Integration of Energy Storage Technology Xi'an Jiaotong University Xi'an 710049 China

The green urea synthesis via co-electrolysis of waste nitrate and CO2 is alluring but challenging, especially with insufficient selectivity caused by thermodynamic differences and kinetic mismatch between multi-step c... 详细信息

The green urea synthesis via co-electrolysis of waste nitrate and CO₂ is alluring but challenging, especially with insufficient selectivity caused by thermodynamic differences and kinetic mismatch between multi-step conversion processes. Here, a domino effect-oriented electrosynthesis strategy is showcased to steer cascade reactions in upgrading nitrate and CO₂ toward urea of high selectivity on Bi-doped In₂O₃ with asymmetric oxygen vacancies (O_v). The conventionally arbitrary reaction mode can be vectored and re-customized by stable and cumulative ^*NH₂ intermediates in situ derived from priority nitrate reduction reaction, which not only form surface frustrated Lewis pairs (SFLPs, Bi─O_v─In─NH₂) with Bi Lewis acid sites to synergistically adsorb and activate CO₂ but also provide more opportunities for sluggish C─N coupling, delivering an unprecedented urea Faradic efficiency of 80.2% and an impressive urea yield of 2.38 × 10³ µg h⁻¹ mg_cat.⁻¹ at −0.4 V versus RHE. The atomically dispersed Bi sites promote the protonation of ^*NO to form nucleophilic ^*NH₂ intermediates, which can be stabilized in the electrophilic region mediated by asymmetric O_v, permitting two nucleophilic attacks to complete the C─N coupling. The domino modeling protocol via positioning a specific intermediate in situ tailors the parallel conversion process and may guide selectivity control of electrosynthesis. © 2025 Wiley-VCH GmbH.

关键词： asymmetric oxygen vacancies CO2 utilization domino effect nitrogen fixation urea electrosynthesis

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Experimental investigation of the gate voltage range of negative differential capacitance in ferroelectric transistors

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Science China(Information Sciences) 2022年第6期65卷 277-278页

作者： Mengxuan YANG Qianqian HUANG Chang SU Liang CHEN Yangyuan WANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of MicroelectronicsPeking University Beijing Laboratory of Future IC Technology and Science Peking University

Dear editor,Recently, ferroelectric(FE)-based negative capacitance FET(NCFET) with ferroelectric/dielectric(FE/DE) gate stack has attracted extensive attention due to its capability of sub-60 mV/dec subthreshold swing... 详细信息

关键词： Ferroelectric Negative differential capacitance effect Polarization Low power Subthreshold swing

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Floquet control of topological phases and Hall effects in Z2 nodal line semimetals

arXiv

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arXiv 2025年

作者： Liu, Pu Cui, Chaoxi Li, Lei Li, Runze Xu, Dong-Hui Yu, Zhi-Ming School of Microelectronics and Physics Hunan University of Technology and Business Changsha410205 China School of Physics Beijing Institute of Technology Beijing100081 China Research Center for Quantum Physics and Technologies Inner Mongolia University Hohhot010021 China School of Physical Science and Technology Inner Mongolia University Hohhot010021 China Department of Physics Chongqing Key Laboratory for Strongly Coupled Physics Chongqing University Chongqing400044 China Center of Quantum Materials and Devices Chongqing University Chongqing400044 China International Center for Quantum Materials Beijing Institute of Technology Zhuhai519000 China

Dynamic control of topological properties in materials is central to modern condensed matter physics, and Floquet engineering, utilizing periodic light fields, provides a promising avenue. Here, we use Floquet theory to theoretically study the topological response of a Z2 nodal line semimetal (NLSM) when driven by circularly polarized light (CPL). We demonstrate that the direction of CPL irradiation critically dictates the resulting topological phase transitions. Specifically, when light is incident perpendicular to the nodal line plane, increasing the light amplitude induces two successive topological phase transitions: first, from the Z2 NLSM to a vortex NLSM, a rare and intriguing topological state;and second, a transition from the vortex NLSM to a semimetal with a pair of Weyl points (WPs). In stark contrast, irradiation along other directions directly transforms the Z2 nodal line into a pair of WPs. We further investigate the transport properties of the Floquet Z2 NLSM, focusing on the anomalous and planar Hall effects. The anomalous Hall effect exhibits a direction-dependent amplitude variation, deviating from conventional two-band NLSM behavior. Importantly, we reveal a significant and tunable planar Hall effect, a phenomenon largely unexplored in Floquet topological materials, which is highly sensitive to both light amplitude and direction. Our findings not only present a novel route to realize the vortex NLSM, but also establish an efficient way to control Hall transport phenomena in Z2 NLSMs. Copyright © 2025, The Authors. All rights reserved.

关键词： Irradiation

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Recent developments in nonferrous metals and related materials for biomedical applications in China:a review

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Rare Metals 2022年第5期41卷 1410-1433页

作者： Hai-Ling Tu Hong-Bin Zhao Yan-Yan Fan Qing-Zhu Zhang State Key Laboratory of Advanced Materials for Smart Sensing GRINM Group Co.Ltd.Beijing 100088China China Academy of Space Technology Beijing 100094China Key Laboratory of Microelectronics Devices&Integrated Technology Institute of MicroelectronicsCASBeijing 100029China

Biomedical materials have received increasing attention in recent decades and have been used in medical applications to advance patient care,such as prosthetic implants,tissue repair and regeneration,drug delivery systems,pharmaceutical or biological therapy products,and sensitive diagnostic *** different types of biomedical materials,nonferrous metals and related materials(NMRMs)are important and attractive *** updating of biomedical NMRMs and devices heavily relies on original research and applicationoriented ***,we provide recent research findings and succinct insights into the developments in NMRMs for biomedical applications in China,including the use of titanium,magnesium,copper,zinc,cobalt,zirconium,hafnium,niobium,rhenium,tantalum,tungsten,silver,gold,platinum,palladium,their alloys and compounds,rare earths,high-entropy alloys,and liquid ***,the literature review concludes with several possible directions of NMRMs for new and future developments in biomedical engineering.

关键词： Nonferrous metal Biomedical Implants In vitro and in vivo Imaging Cancer treatment

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Investigation on SiGe Selective Epitaxy for Source and Drain Engineering in 22 nm CMOS technology Node and Beyond 1st ed. 2019

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丛书名： Springer Theses

2019年

作者： Guilei Wang

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.

ISBN: (数字)9789811500466

ISBN: (纸本)9789811500459

This thesis presents the SiGe source and drain (S/D) technology in the context of advanced CMOS, and addresses both device processing and epitaxy modelling.

关键词： Semiconductors Electronic Circuits and Systems Microsystems and MEMS

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A two-dimensional analytical model of fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs

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Journal of Semiconductors 2011年第4期32卷 70-76页

作者：李劲刘红侠袁博曹磊李斌 Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Devices School of MicroelectronicsXidian University School of Information and Electrical Engineering Hunan University of Science and Technology

On the basis of the exact resultant solution of two dimensional Poisson’s equations,a new accurate two-dimensional analytical model comprising surface channel potentials,a surface channel electric field and a threshold voltage for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs is successfully developed. The model shows its validity by good agreement with the simulated results from a two-dimensional numerical *** offering a physical insight into device physics,the model provides basic design guidance for fully depleted asymmetrical dual material gate double-gate strained-Si MOSFETs.

关键词： dual material gate double-gate MOSFET strained-Si short-channel effect the drain-induced barrier-lowering

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Quantum transport for the gate-length scaling limit of Si nanowire field-effect transistors based on calibrated k⋅p Hamiltonian parameters

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Physical Review Applied 2025年第3期23卷 034049-034049页

作者： Guohui Zhan Tongshuai Zhu Jiaxin Yao Kun Luo Huaixiang Yin Shengli Zhang Zhenhua Wu Center for Quantum Matter School of Physics Zhejiang University Hangzhou 310058 Zhejiang China University of Chinese Academy of Sciences 100049 Beijing China Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China College of Science China University of Petroleum (East China) Qingdao 266580 Shandong China School of Materials Science and Engineering China University of Petroleum (East China) Qingdao 266580 Shandong China Key Laboratory of Advanced Display Materials and Devices College of Material Science and Engineering Nanjing University of Science and Technology Nanjing 210094 Jiangsu China

We present a comprehensive investigation of quantum transport in silicon nanowire field-effect transistors (SiNWFETs) at the scaling limit. The Si bulk k⋅p Hamiltonian parameters are rendered invalid at smaller scales due to pronounced quantum confinement effects. Consequently, nanowire k⋅p Hamiltonian parameters are meticulously calibrated with the use of first-principles HSE06 band structures through the fast least-squares method. On the basis of the nonequilibrium Green’s function formalism, we then systematically analyze the performance limits of gate-all-around SiNWFETs under various gate lengths. With diminishing gate lengths, quantum tunneling from source to drain intensifies, leading to a degradation in subthreshold swing. Our findings reveal that the gate-length scaling limit for n-type devices is numerically larger than for p-type devices, and distinct gate scaling limits are elucidated for various cross-section sizes; for instance, the ultimate scaling limit of Si nanowires of 4×4nm2 cross section is approximately 10 nm.

关键词： Nanowires

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A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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Science China(Information Sciences) 2020年第6期63卷 253-255页

作者： Gong CHEN Bocheng YU Xiaokang LI Xiaoqiao DONG Xiaoyan XU Zhihong LI Ru HUANG Ming LI Key Laboratory of Microelectronic Devices and Circuits(MOE) Institute of MicroelectronicsPeking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University Faculty of Information Technology Beijing University of Technology

Dear editor,Recently, the integration of photosensitive material and electronic nanodevice has been the center of attention with Internet of things (IoT)technology development [1–3]. The immobilization of such photoactive molecules on the semiconductor surface was necessarily adopted to employ their photoelectric characteristics which can be observed in the solution. Porphyrin-based hybrid transistors have emerged as promising candidates for photonic sensing application due to the

关键词： A photomemory by selective-assembling hybrid porphyrin-silicon nanowire field-effect transistor

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