检索结果-内蒙古大学图书馆

SSRN 2024年

作者： Zhang, YuChen Song, Jian-Jun Ren, JiaZhi Tang, AiLan State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology School of Microelectronics Xidian University Xi'An710071 China

This paper presents and optimizes for the first time the design of UTB SOI MOSFET and its connection method for 2.45 GHz weak energy density harvesting, and optimizes the device structure parameters by Sentaurus TCAD software, so that the device exhibits the desired characteristics of high forward bias current and low reverse leakage current. The new connection method utilizes the device's back bias regulated threshold voltage to enable the device's dual gates to simultaneously control the channel current, resulting in a highly efficient RF-DC rectifier at a modest energy density of 2.45 *** Sentaurus Mixmode circuit mixing simulation module shows that in a half-wave rectifier circuit with loads of 0.1 pF and 20 kΩ, the single-tube energy conversion efficiencies of the new device reach 9.95% and 19.27% at input energies of -16 and -10 dBm, respectively, which are 2.73 and 2.48 times that of a silicon-based MOSFET under the same conditions. © 2024, The Authors. All rights reserved.

关键词： Threshold voltage

来源：评论

学校读者我要写书评

暂无评论

The Study on Influence Factors of Contact Properties of Metal-Mos2 Interfaces

SSRN

引用

SSRN 2024年

作者： Li, Jiawei Sun, Jiale Lu, Hongliang Zhang, Yuming Pan, Yuche State Key Laboratory of Wide-Bandgap Semiconductor Devices and lntegrated Technology School of Microelectronics Xidian University Xi’an710071 China

The metal and two-dimension (2D) semiconductor contact interfaces have a more considerable contact resistance hindering carrier injection, which makes the performance of 2D semiconductor devices less than the theory. The contact properties of the three metals of Ni, Au, and Mo with MoS2 are simulated by the first-principles method. The interface dipole caused by the interface charge redistribution changes the work function of metals at the metal-MoS2 interface, so the interface charge redistribution is one of the important factors for correctly evaluating the contact properties. Due to the metal-induced gap states (MIGS) at metal-monolayer (ML) MoS2 interfaces, the Fermi level is strongly pinned to fixed energy, and the Schottky barrier height (SBH) cannot be regulated efficiently by metal work functions. Although the work function of Au is bigger than Ni, the Fermi level of Au is pinned at a higher position. In the meantime, the MoS2 appears metallization, and band gap narrowing due to the larger MIGS. In the Mo-MoS2 interface, the Fermi level is pinned near the conduction band minimum of MoS2. The contact resistances (Rc) of the three structures are tested by the Circular Transfer Length Method (CTLM), which is consistent with the prediction of the simulation. The results show the Mo-MoS2 has the smallest Rc and the influence factors of contact properties, and indicate that contact resistance of 2D semiconductors cannot be simply predicted by soled work functions or Fermi level pinning. © 2024, The Authors. All rights reserved.

关键词： Molybdenum compounds

来源：评论

学校读者我要写书评

暂无评论

Bottom Dielectric Isolation to Suppress Sub-Fin Parasitic Channel of Vertically-Stacked Horizontal Gate-All-Around Si Nanosheets devices

Bottom Dielectric Isolation to Suppress Sub-Fin Parasitic Ch...

引用

2022 China Semiconductor technology International Conference, CSTIC 2022

作者： Cao, Lei Liu, Yang Wu, Zhenhua Zhang, Qingzhu Yao, Jiaxin Luo, Yanna Xu, Haoqing Zhao, Peng Luo, Kun Wu, Yongqin Bu, Weihai Yin, Huaxiang Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics of Chinese Academy of Sciences Beijing100029 China University of Chinese Academy of Sciences Beijing100049 China Semiconductor Technology Innovation Center Corporation Beijing100176 China

ISBN: (数字)9781665497589

ISBN: (纸本)9781665497589

In this paper, to suppress the parasitic channel of sub-fin in vertically stacked gate-all-around (GAA) Si nanosheet FETs (NSFETs), the bottom dielectric isolation (BDI) was designed and simulated using TCAD simulation. The results show that the sub-threshold characteristics of the n-type NSFETs are improved by the BDI approach, and the gate capacitance is reduced by 16.98% compared with that of the NSFETs with sub-fin. In addition, the BDI technology can increase the process and electrical stability of the NSFETs. © 2022 IEEE.

关键词： Nanosheets

来源：评论

学校读者我要写书评

暂无评论

Monitoring the life cycle stages of Haematococcus pluvialis by using FLIM

Monitoring the life cycle stages of Haematococcus pluvialis ...

引用

2023 Advanced Fiber Laser Conference, AFL 2023

作者： Deng, Yifeng Li, Changjiang Xiao, Zeyu Chen, Jiakai Wu, Zipei Peng, Xiao Lu, Zhen Yan, Wei Qu, Junle State Key Laboratory of Radio Frequency Heterogeneous Integration Shenzhen University China College of Physics and Optoelectronic Engineering Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province Shenzhen University Shenzhen518060 China Yantai Institute of Coastal Zone Research Chinese Academy of Sciences Yantai264003 China Medical Engineering and Technology College Xinjiang Medical University Urumqi830011 China

ISBN: (纸本)9781510677661

Haematococcus pluvialis is one type of freshwater unicellular microalgae, belonging to the Chlorophyta, Haematococcus. H. pluvialis has high economic value due to its wide variety of nutritional components, including astaxanthin, vitamins, algal polysaccharides, proteins, etc. Current microalgae detection methods are deficient in monitoring the life cycle of H. pluvialis. In this study, we applied the confocal fluorescence microscopy and the fluorescence lifetime imaging microscopy (FLIM) system to observe the different stages of the microalgal cells. The cell morphology and the fluorescence lifetime distributions were obtained for further analysis. The results showed that H. pluvialis had a diameter of about 25μm in the state of flagellated macrozooids (zoospore). When the nutrients in the medium were continuously consumed, the individual cells of H. pluvialis became larger and entered the microzooid stage, whose diameters were around 35μm. The fluorescence lifetime values of H. pluvialis in the macrozooid (zoospore) stage and the microzooid stage were around 700 to 800ps and 1000ps, respectively. The next stage was the palmella stage, in which the diameter of H. pluvialis increased to the range of 40 to 52μm. During this stage, the larger algae began to accumulate red pigment in the center of the cell. Meanwhile, the fluorescence lifetime values near the center of the algal cell increased to around 1300ps, approximately 200ps higher than the values in the periphery of the cells, showing layered properties of H. pluvialis in the palmella stage. In summary, FLIM can provide a real-Time quantitative method for monitoring different life stages and cell morphologies of H. pluvialis during its life cycle in a non-destructive way. © COPYRIGHT SPIE.

关键词： Microalgae

来源：评论

学校读者我要写书评

暂无评论

High-Al-composition AlGaN/GaN MISHEMT on Si with fT of 320 GHz

引用

Science China(Information Sciences) 2024年第06期67卷 459-460页

作者： Hanghai DU Lu HAO Zhihong LIU Zeyu SONG Yachao ZHANG Kui DANG Jin ZHOU Jing NING Zan LI Jincheng ZHANG Yue HAO State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian University Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian University State Key Laboratory of Integrated Services Networks School of Communication EngineeringXidian University

GaN-based metal-insulator-semiconductor high-electronmobility-transistors (MISHEMTs) have many excellent performances compared with the Si and Ga As counterparts,and are prime candidates for applications in communicat... 详细信息

关键词： algan high with composition mishemt

来源：评论

学校读者我要写书评

暂无评论

Compositional engineering and performance optimization of β-(AlxGa1-x)2O3 Films via MOCVD Epitaxy

引用

Journal of Alloys and Compounds 2025年 1031卷

作者： Wang, Yao Wang, Long Dong, Yanbo Liu, Yuhong Feng, Qian Zhang, Yachao Zhang, Jincheng Hao, Yue State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an710071 China Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University Xi'an710071 China State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an710071 China

This study systematically investigates the microstructural, electronic band, and interfacial properties of (AlxGa1-x)2O3 thin films with varying Al compositions, grown epitaxially on Ga2O3 substrates. Advanced characterization techniques, including X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and geometric phase analysis (GPA), were employed to elucidate the mechanisms underlying the modulation of bandgap width, lattice strain, and defect distributions induced by Al doping. The results demonstrate that increasing the Al composition leads to a progressive enlargement of the bandgap width, while the formation of oxygen vacancies exhibits a non-linear trend, decreasing initially and subsequently increasing at higher Al concentrations. Moderate Al doping enhances the crystalline quality and bond strength of the thin films, whereas excessive Al incorporation introduces significant lattice strain and defect accumulation. Moreover, the (AlxGa1-x)2O3/Ga2O3 heterojunction interface exhibits excellent lattice matching, with the epitaxial Ga2O3 layer playing a critical role in mitigating interfacial stress. By optimizing epitaxial growth parameters, this work achieves precise control over the structural and electronic properties of (AlxGa1-x)2O3 thin films, providing both experimental insights and theoretical guidance for the development of high-performance wide-bandgap semiconductor devices. © 2025 Elsevier B.V.

关键词： Heterojunctions

来源：评论

学校读者我要写书评

暂无评论

Preparation of meter-scale Cu foils with decimeter grains and the use for the synthesis of graphene films

引用

Journal of Materiomics 2024年第1期10卷 1-6页

作者： Ruitao Jia Fangzhu Qing Shurong Wang Yuting Hou Changqing Shen Feng Hao Yang Yang Hongwei Zhu Xuesong Li School of Integrated Circuit Science and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu610054China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of ChinaShenzhen518110China School of Materials and Energy University of Electronic Science and Technology of ChinaChengdu610054China PipeChina Southwest Pipeline Co. Ltd.Chengdu610041China State Key Lab of New Ceramics and Fine Processing School of Materials Science and EngineeringTsinghua UniversityBeijing100084China

Chemical vapor deposition(CVD)is the most promising method for the preparation of high-quality and large-area graphene films,especially the epitaxial growth of graphene on large-area single-crystal Cu *** single-crystal Cu foils are normally achieved by thermally annealing the commercial poly-crystalline Cu foils,their size and therefore the size of graphene films grown on them are limited to the size of the reaction *** report a simple and feasible method to prepare large-area Cu foils with decimeter grains by thermally annealing the rolled-up Cu foils,where the Cu layers are separated by thin porous carbon fiber *** carbon fiber cloths prevent Cu layers from sticking to each other at high temperatures while do not block the gas *** such a way,the utilization efficiency of the reaction chamber is significantly improved,e.g.,0.2 m×(1e2)m Cu foils can be processed even in a 5 cm diameter quartz tube ***-quality graphene films grown on such Cu foils are then *** method may be suitable for the annealing of other metal foils to enlarge grain size and the synthesis of other two-dimensional materials on them such as h-BN.

关键词： Graphene Single-crystal Cu Chemical vapor deposition Synthesis

来源：评论

学校读者我要写书评

暂无评论

Full-Stokes metasurface polarimetry requiring only a single measurement

引用

Photonics Research 2024年第3期12卷 514-521页

作者： CHENGLONG ZHENG HUI LI JINGYU LIU MENGGUANG WANG HUAPING ZANG YAN ZHANG JIANQUAN YAO Key Laboratory of Material Physics Ministry of EducationSchool of Physics and MicroelectronicsZhengzhou UniversityZhengzhou 450052China Key Laboratory of Opto-Electronics Information Technology(Tianjin University) Ministry of EducationSchool of Precision Instruments and Opto-Electronics EngineeringTianjin UniversityTianjin 300072China Beijing Key Laboratory for Metamaterials and Devices Key Laboratory of Terahertz OptoelectronicsMinistry of Educationand Beijing Advanced Innovation Center for Imaging TechnologyDepartment of PhysicsCapital Normal UniversityBeijing 100048China State Key Laboratory of Modern Optical Instrumentation College of Optical Science and EngineeringZhejiang UniversityHangzhou 310027China

Polarization is crucial in various fields such as imaging,sensing,and substance detection.A compact,fast,and accurate polarization detection device is vital for these ***,we demonstrate a multifocus metalens for terahertz polarization detection that requires only a single measurement to obtain complete polarization parameters and reconstruct the polarization state of the incident *** individual subarrays of this metalens convert each of the six polarized components into the same polarization,which in turn links the Stokes parameters to these six *** incident linear polarizations and elliptical polarizations are characterized by Stokes parameters and polarization *** and experimental results show that the scheme can accurately detect the incident polarization with a single *** proposed metasurface polarimetry may find applications in the fields of real-time terahertz detection and integrated optics.

关键词： field incident polar

来源：评论

学校读者我要写书评

暂无评论

Optodevice-in-Sphere for Biaxial Tilt Sensing

Optodevice-in-Sphere for Biaxial Tilt Sensing

引用

IEEE SENSORS

作者： Ruoyao Huang Tingxuan Chen Ling Zhu Kwai Hei Li School of Microelectronics Southern University of Science and Technology Shenzhen China State Key Laboratory of Radio Frequency Heterogeneous Integration (Shenzhen University) Shenzhen China Key Laboratory of Optoelectronic Devices and Systems of Ministry of Education and Guangdong Province College of Physics and Optoelectronic Engineering Shenzhen University Shenzhen China

ISBN: (数字)9798350363517

ISBN: (纸本)9798350363524

A compact dual-axis tilt sensor utilizing chip-scale GaN optoelectronics is presented. The sensor comprises a cross-shaped optoelectronic device enclosed in a glass sphere, employing mineral oil as a liquid pendulum. The device integrates a light emitter and four independent detectors, designed to detect changes in the air-oil interface induced by dual-axis angular tilts. The sensor exhibits a linear response to an angle range of ±80° on both X- and Y-axes, with sensitivities of 40 nA/° and 37 nA/° respectively. It also demonstrates negligible inter-axis crosstalk, a resolution of up to 0.10, fast response, and high stability. Owing to its compact dimensions, the sensor facilitates integration into detection targets, rendering it an ideal candidate for real-time monitoring applications.

关键词： Liquids Oils Glass Robot sensing systems Optical crosstalk Light emitting diodes Minerals Optical sensors Substrates Testing

来源：评论

学校读者我要写书评

暂无评论

Recent progress on fabrication and flat-band physics in 2D transition metal dichalcogenides moiré superlattices

引用

Journal of Semiconductors 2023年第1期44卷 43-55页

作者： Xinyu Huang Xu Han Yunyun Dai Xiaolong Xu Jiahao Yan Mengting Huang Pengfei Ding Decheng Zhang Hui Chen Vijay Laxmi Xu Wu Liwei Liu Yeliang Wang Yang Xu Yuan Huang Advanced Research Institute of Multidisciplinary Science Beijing Institute of TechnologyBeijing 100081China Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China School of Physical Sciences University of Chinese Academy of SciencesBeijing 100049China School of Integrated Circuits and Electronics MIIT Key Laboratory for Low-Dimensional Quantum Structure and DevicesBeijing Institute of TechnologyBeijing 100081China BIT Chongqing Institute of Microelectronics and Microsystems Chongqing 401332China

Moiré superlattices are formed when overlaying two materials with a slight mismatch in twist angle or lattice constant. They provide a novel platform for the study of strong electronic correlations and non-trivial band topology, where emergent phenomena such as correlated insulating states, unconventional superconductivity, and quantum anomalous Hall effect are discovered. In this review, we focus on the semiconducting transition metal dichalcogenides(TMDs) based moiré systems that host intriguing flat-band physics. We first review the exfoliation methods of two-dimensional materials and the fabrication technique of their moiré structures. Secondly, we overview the progress of the optically excited moiré excitons, which render the main discovery in the early experiments on TMD moiré systems. We then introduce the formation mechanism of flat bands and their potential in the quantum simulation of the Hubbard model with tunable doping, degeneracies, and correlation strength. Finally, we briefly discuss the challenges and future perspectives of this field.

关键词： flat-band physics two-dimensional materials moirésuperlattices Hubbard model moiréexcitons

来源：评论

学校读者我要写书评

暂无评论

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案：

请选择收藏分类：

通借通还

建议与咨询 留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

时间限定

文献类型

馆藏选择

核心期刊

语言

文献类型

帮助

文字说明：

检索规则说明：

检索范例：

分类表

所选分类

限定检索结果

文献类型

馆藏范围

日期分布

学科分类号

主题

机构

作者

语言

请选择保存的检索档案： 新增检索档案 确定 取消

请选择收藏分类： 新增自定义分类 确定 取消

通借通还

建议与咨询留下您的常用邮箱和电话号码，以便我们向您反馈解决方案和替代方法

请选择保存的检索档案：

请选择收藏分类：