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2nd IEEE International Power Electronics and Application Symposium, PEAS 2023

作者： Wang, Meng Li, Xiangdong Zhang, Jincheng Wang, Hongyue Wang, Junbo Han, Zhanfei Yuan, Jiahui Hao, Yue Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of Technology Guangzhou510555 China School of Microelectronics Xidian University Key Laboratory of Wide Bandgap Semiconductor Materials and Devices Xi'an710071 China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou511370 China

ISBN: (纸本)9798350313765

This study investigates the recoverable current collapse phenomenon of p-GaN devices under repetitive short-circuit (SC) stress. A SC platform is established to simulate high-voltage and high-current conditions. The degradation of threshold voltage, saturation current, and conduction resistance indicates the occurrence of current collapse due to SC stress. Both gate and drain leakage decrease under SC stress, but these DC parameters recover after a 2-day period, suggesting that the current collapse under SC stress is caused by the charging and discharging of defects. Moreover, after 1000 cycles of SC stress, the bias temperature instability (BTI) is intensified, and this is accompanied by a decrease in gate leakage current, which, in turn, indicates a reduction in hole injection from the gate metal. The underlying mechanism involves the capture of channel electrons by AlGaN, p-GaN, and their interface defects, leading to an elevation of the barrier and the recoverable current collapse effect of p-GaN HEMTs under SC stress. © 2023 IEEE.

关键词： BTI current collapse p-GaN recoverable

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A High-Voltage Smooth Self-Starting Reference Current Source Circuit

A High-Voltage Smooth Self-Starting Reference Current Source...

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International Conference on Solid-State and Integrated Circuit technology

作者： Dongyan Zhao Jie Pan Chenghao Zhang Yidong Yuan Yi Hu Hongwei Shen Zekun Zhou Beijing Smart-chip Microelectronics Technology Co. Ltd. Beijing China State key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

This paper presents a high-performance self-starting reference current source capable of operating in high-voltage scenarios. By employing loop control and segmented current control, it addresses the issues of poor performance in conventional high-voltage references and the need for external startup signals. In terms of voltage endurance, the reference source utilizes high-voltage transistor isolation to maintain high-voltage tolerance, while the core reference operates using low-voltage devices, thus avoiding the performance drawbacks associated with high-voltage components. Moreover, the startup sequence involves constant current charging followed by constant voltage charging, facilitating smooth and controllable self-starting. The design is implemented using a 0.18 μ m process. The circuit's maximum input voltage is 26V, with a power supply rejection ratio (PSRR) of 78.8dB, a line regulation of 0.22 % /V, a temperature coefficient (TC) of 8.96 ppm/°C for the −40 °C to 125°C temperature range and a power consumption of 7.5μ A.

关键词： Performance evaluation Integrated circuit technology Current control Temperature distribution Low voltage Power demand High-voltage techniques Regulation Transistors Voltage control

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Multi-physics Simulation and Application of Ion-Gel Based Triboelectric Nanogenerators

Multi-physics Simulation and Application of Ion-Gel Based Tr...

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International Conference on Solid-State and Integrated Circuit technology

作者： Chen Liu Ruibo Wang Ruiyi Gao Yuming Zhang School of Microelectronics and the State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology Xidian University Xi'an China Fundamentals Department Air Force Engineering University Xi'an China

ISBN: (数字)9798350361834

ISBN: (纸本)9798350361841

By combining the principles of contact electrification and electrostatic induction, triboelectric nanogenerators (TENGs) exhibit unique advantages in the fields of energy harvesting and sensing. Tribotronics is proposed as a field that couples triboelectricity with semiconductors, which imposes strict requirements on the output of TENGs to drive semiconductor devices more efficiently. The effect of the surface microstructure and motion frequency on the output performance of TENGs has been systematically investigated by numerical simulation. The theoretical analysis indicates that the output voltage increases by 17.1 times as the motion frequency rises from 0.25 Hz to 4 Hz, resulting in a four-fold increase in the peak output power. A new estimation method of the equivalent surface charge density is also proposed for TENGs with various morphologies. It can be noted that the open-circuit voltage and short-circuit charge of the devices with pyramid patterns on the contacting surfaces are approximately 2.2 and 1.8 times greater than a TENG without any patterns, respectively. The experimental output characteristics of the TENGs align well with the simulation results. Furthermore, a tactile-sensing element has been successfully demonstrated by coupling the ion-gel based TENG and the In 2 O 3 based thin-film transistor (TFT).

关键词： Performance evaluation Nanogenerators Surface morphology Voltage Numerical simulation Thin film transistors Sensors Microstructure Triboelectricity Integrated circuit modeling

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The in-situ parasitic microstructure interface and defect formation mechanism in (010) β-Ga_(2)O_(3) epitaxial film via MOCVD

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Science China Materials 2025年第2期68卷 515-522页

作者： Xianqiang Song Yunlong He Zhan Wang Xiaoli Lu Jing Sun Ying Zhou Yang Liu Jiatong Fan Xiaoning He Xuefeng Zheng Xiaohua Ma Yue Hao State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology National Engineering Research Center of Wide Band-Gap SemiconductorSchool of MicroelectronicsXidian UniversityXi’an 710071China School of Electronic Engineering Xi’an University of Posts&TelecommunicationsXi’an 710121China Guangzhou Institute of Technology Xidian UniversityGuangzhou 510555China Shaanxi Semiconductor Industry Association Xi’an 710065China

In this study, a typical hillock surface defect wasdiscovered in (010) β-Ga_(2)O_(3) thin films grown by metal-organicchemical vapor deposition (MOCVD), and the morphologyand structure were systematically investigated. The observeddefects exhibit a polygonal shape with a ridge-like hillockalong the [001] direction. Transmission electron microscopy(TEM) microanalysis reveals that polygonal hillock defects arecomposed of twin grains forming an inverted pyramid shapeembedded in the epitaxial layer, which exhibits twofold rotational symmetry along the [100] crystal direction. Theboundary between the defective and perfect lattices appearsband-like, characterized by complex faults, with structuralrelationships between the twin region and the matrix identified as [001]matrix||[010]Defect and {−310}matrix||{−201}Defect. Theorigin of surface defects in the (010) β-Ga_(2)O_(3) homoepitaxiallayers could be attributed not only to the extent of substratedefects but also to epitaxial process conditions. The definitiveexplanation is the localized aggregation of gallium atoms/oxygen vacancies during the growth process, as evidenced byenergy-dispersive X-ray (EDX) analysis and optimized experiments. This work provides brand-new perspectives intothe study of defects in β-Ga_(2)O_(3) epitaxial films, which furtheradvances the application of Ga_(2)O_(3) materials in power devicetechnologies.

关键词： β-Ga_(2)O_(3) MOCVD surface defect

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Simultaneous microwave characterization of wafer-level optoelectronic transceiver chips based on photonic sampling and mapping

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Science China(Information Sciences) 2024年第2期67卷 337-338页

作者： Yutong HE Xinhai ZOU Ying XU Zhihui LI Naidi CUI Junbo FENG Yali ZHANG Zhiyao ZHANG Shangjian ZHANG Yong LIU Ninghua ZHU Research Center for Microwave Photonics State Key Laboratory of Electronic Thin Films and Integrated DevicesSchool of Optoelectronic Science and EngineeringUniversity of Electronic Science and Technology of China Chongqing United Microelectronics Center (CUMEC) Xiongan Institute of Innovation Chinese Academy of Sciences

Photonic integrated circuits(PICs) promise future parallelism growths of high-performance communication, computation, and offer unprecedented bandwidth scalability with reduced power consumption as a viable replacement for an electrical wire with an optoelectronic transceiver consisting of a transmitter and a receiver integrated on the same wafer.

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Simulation Study on 1200V CS-SemiSJ-IGBT for Reduced Switching Loss and Fast Switching 17

Simulation Study on 1200V CS-SemiSJ-IGBT for Reduced Switchi...

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17th IEEE International Conference on Solid-State and Integrated Circuit technology, ICSICT 2024

作者： Li, Luping Li, Zehong Chen, Peng Wu, Yuzhou Rao, Qiansheng Li, Ming Qin, Haifeng Wan, Li Yang, Yang Li, Wei Ren, Min State Key Laboratory of Electronic Thin Films and Integrated Devices Chengdu611731 China Chongqing Institute of Microelectronics Industry Technology UESTC Chongqing401331 China Shenzhen Institute for Advanced Study UESTC Shenzhen518110 China School of Aeronautics and Astronautics UESTC Chengdu611731 China Shanghai Super Semiconductor Technology Company Ltd. Shanghai201203 China Ltd. Chongqing401331 China

ISBN: (纸本)9798350361834

Characteristics of 1200 V CS-SemiSJ-IGBT and its pillar thickness influence on key performance are investigated though TCAD simulation in this work. Firstly, 1200 V CS-SemiSJ-IGBT with 45 μ m thick SJ-pillar is illustrated to present performance characteristics and advantage of CS-SemiSJ-IGBT. Secondly, 1200 V CS-SemiSJ-IGBTs with different SJ-pillar thickness are investigated to reveal its optimal SJ-pillar thickness. As a conclusion, the 1200 V CS-SemiSJ-IGBT with 45 μ m thick SJ-pillar can provide comparative trade-off as FullSJ-IGBT with the same voltage level. © 2024 IEEE.

关键词： Insulated gate bipolar transistors (IGBT)

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Sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size formed by laser irradiation

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Chinese Physics B 2021年第9期30卷 384-387页

作者： Xinxin Li Zhen Deng Sen Wang Jinbiao Liu Jun Li Yang Jiang Ziguang Ma Chunhua Du Haiqiang Jia Wenxin Wang Hong Chen Key Laboratory for Renewable Energy Beijing Key Laboratory for New Energy Materials and DevicesBeijing National Laboratory for Condensed Matter PhysicsInstitute of PhysicsChinese Academy of SciencesBeijing 100190China University of Chinese Academy of Sciences Beijing 100049China Center of Materials and Optoelectronics Engineering University of Chinese Academy of SciencesBeijing 100049China The Yangtze River Delta Physics Research Center Liyang 213000China Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of SciencesChina Beijing National Laboratory for Condensed Matter Physics Institute of PhysicsChinese Academy of SciencesBeijing 100190China Songshan Lake Materials Laboratory Dongguan 523808China.

SiGe spheres with different diameters are successfully fabricated on a virtual SiGe template using a laser irradiation *** results from scanning electron microscopy and micro-Raman spectroscopy reveal that the diameter and Ge composition of the SiGe spheres can be well controlled by adjusting the laser energy *** addition,the transmission electron microscopy results show that Ge composition inside the SiGe spheres is almost uniform in a well-defined,nearly spherical *** a convenient method to prepare sphere-shaped SiGe micro/nanostructures with tunable Ge composition and size,this technique is expected to be useful for SiGe-based material growth and micro/optoelectronic device fabrication.

关键词： SiGe micro/nanospheres laser irradiation

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Design and simulation of AlN-based vertical Schottky barrier diodes

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Chinese Physics B 2021年第6期30卷 526-530页

作者： Chun-Xu Su Wei Wen Wu-Xiong Fei Wei Mao Jia-Jie Chen Wei-Hang Zhang Sheng-Lei Zhao Jin-Cheng Zhang Yue Hao Key Laboratory of Wide Band-Gap Semiconductors and Devices School of MicroelectronicsXidian UniversityXi'an 710071China China Electronic Product Reliability and Environmental Testing Research Institute Guangzhou 510610China Shanghai Academy of Spaceflight Technology Shanghai 201109China

The key parameters of vertical AlN Schottky barrier diodes(SBDs) with variable drift layer thickness(DLT) and drift layer concentration(DLC) are investigated. The specific on-resistance(R_(on,sp)) decreased to 0.5 mΩ · cm^(2) and the breakdown voltage(V_(BR)) decreased from 3.4 kV to 1.1 kV by changing the DLC from 10^(15) cm^(-3) to 3×10^(16) cm^(-3). The VBRincreases from 1.5 kV to 3.4 kV and the Ron,sp also increases to 12.64 mΩ · cm^(2) by increasing DLT from 4-μm to 11-μm. The VBRenhancement results from the increase of depletion region extension. The Baliga's figure of merit(BFOM) of3.8 GW/cm^(2) was obtained in the structure of 11-μm DLT and 10^(16) cm^(-3) DLC without FP. When DLT or DLC is variable,the consideration of the value of BFOM is essential. In this paper, we also present the vertical AlN SBD with a field plate(FP), which decreases the crowding of electric field in electrode edge. All the key parameters were optimized by simulating based on Silvaco-ATLAS.

关键词： aluminum nitride Schottky barrier diodes specific on-resistance R_(on sp) breakdown voltage V_(BR)

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A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability

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Science China(Information Sciences) 2020年第2期63卷 245-247页

作者： Yang ZHAO Qianqian HUANG Ru HUANG Key Laboratory of Microelectronic Devices and Circuits (MOE) Institute of Microelectronics Peking University National Key Laboratory of Science and Technology on Micro/Nano Fabrication Peking University

Dear editor,As CMOS technology scaling down, the reduction of supply voltage and power consumption becomes extremely difficult due to the subthreshold swing(SS) limitation (60 m V/dec) at room *** FET (TFET) with band-to-band tunneling (BTBT) mechanism is regarded as one of the most promising emerging low-power devices due to its sub-60 m V/dec SS and ultra-low off-current

关键词： A novel tunnel FET design through hybrid modulation with optimized subthreshold characteristics and high drive capability FET

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Effect of Bit Line Voltage Stress on Half-Selected Device in 1T1R Array

Effect of Bit Line Voltage Stress on Half-Selected Device in...

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IEEE Silicon Nanoelectronics Workshop (SNW)

作者： Jinru Lai Danian Dong Xu Zheng Jie Yu Wenxuan Sun Xiaoxin Xu Key Laboratory of Microelectronics Devices and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing China School of Microelectronics University of Science and Technology of China Hefei China

ISBN: (数字)9781665459792

ISBN: (纸本)9781665459808

Resistive random access memory (RRAM) becomes one of the solutions of embedded memory under advanced technology node. In this paper, we investigate the program disturb issues for the half-selected cell in 1T1R array. By utilizing the stress testing and RTN measurement, we conclude that the high source-drain voltage induced excess defects in the oxide layer is the main reason for the degradation of the FinFET. Therefore, the program voltage applied on BL of 1T1R array needs to be controlled to guarantee the reliability. keywords: 1T1R, FinFET, half-selected cell, disturbance

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