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Demonstration of vertical Ga2O3 Schottky barrier diodes directly on heavily doped single-crystal substrate using thermal oxidation technology

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The European Physical Journal Special Topics 2025年 1-8页

作者： Liu, Hongyu Han, Shida Lu, Xiaoli Wang, Yuangang Dun, Shaobo Han, Tingting Lv, Yuanjie Feng, Zhihong State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi’an China National Key Laboratory of Solid-State Microwave Devices and Circuits Hebei Semiconductor Research Institute Shijiazhuang China

In this letter, by implementing thermal oxidation (TO) technology, vertical Ga2O3 Schottky barrier diodes were directly fabricated on a heavily doped single-crystal (001) β-Ga2O3 substrate without epitaxial growth. The electron concentration in near-surface region of the Ga2O3 substrate was greatly reduced by introducing high-temperature TO processing. X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) results indicated that the oxygen vacancy (VO) content in the near-surface region was significantly decreased, while a 500–700 nm acceptor-like defect energy level combining multiple gallium vacancy (VGa) generated, and compensated for, the free carriers after annealing in an oxygen-rich atmosphere at high temperature. The annealing temperature and time were analyzed and optimized. Finally, vertical β-Ga2O3 SBDs with a breakdown voltage (Vbr) of 460 V, specific on-resistance (Ron,sp) of 10.5 mΩ·cm2 and a power figure-of-merit (PFOM) of 20.2 MW/cm2, were demonstrated when the annealing temperature and time were 900 °C and 2 h. These results indicate that vertical β-Ga2O3 SBDs can be directly fabricated on a single-crystal substrate without epitaxial growth, providing a new method of reducing the cost of such devices.

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A seaweed-inspired separator for high performance Zn metal batteries:Boosting kinetics and confining side-reactions

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Journal of Energy Chemistry 2025年第2期101卷 191-200,I0005页

作者： Qianzhi Gou Horan Luo Long Qu Feilin Yu Kaixin Wang Sida Zhang Ziga Luogu Ben Zhang Yujie Zheng Bingye Song John Wang Meng Li National Innovation Center for Industry-Education Integration of Energy Storage MOE Key Laboratory of Low-grade Energy Utilization Technologies and SystemsCQU-NUS Renewable Energy Materials&Devices Joint LaboratoryCollege of Energy&Power EngineeringChongqing UniversityChongqing 400044China Schoolof Building Services Science and Engineering Xi'an University of Architecture and TechnologyXi'an 710055ShaanxiChina School of Chemistry and Chemical Engineering Chongqing University of Science and TechnologyChongqing 401331China Southwest Technology and Engineering Research Institute Chongqing 400039China National University of Singapore(Chongqing)Research Institute Chongqing 401123China

Uncontrolled dendrite growth,sluggish reaction kinetics,and drastic side reactions on the anodeelectrolyte interface are the main obstacles that restrict the application prospect of aqueous zinc-ion *** glass fiber(GF)separator with chemical inertness is almost ineffective in restricting these ***,inspired by the ionic enrichment behavior of seaweed plants,a facile biomass species,anionic sodium alginate(SA),is purposely decorated on the commercial GF separator to tackle these issues towards Zn *** from the abundant zincophilic functional groups and superior mechanical strength properties,the as-obtained SA@GF separator could act as ion pump to boost the Zn^(2+)transference number(0.68),reduce the de-solvation energy barrier of hydrated Zn^(2+),and eliminate the undesired concentration polarization effect,which are verified by experimental tests,theoretical calculations,and finite element simulation,*** on these efficient modulation mechanisms,the SA@GF separator can synchronously achieve well-aligned Zn deposition and the suppression of parasitic ***,the Zn‖Zn coin cell integrated with SA@GF separator could yield a prolonged calendar lifespan over 1230 h(1 mA cm^(-2)and 1 mAh cm^(-2)),exhibiting favorable competitiveness with previously reported separator modification ***,the Zn-MnO_(2)full and pouch cell assembled with the SA@GF separator also delivered superior cycling stability and rate performance,further verifying its practical application *** work provides a new design philosophy to stabilize the Zn anode from the aspect of separator.

关键词： Aqueous zinc-ionbatteries Separator modification Sodium alginate Dendrite-free Interfacial reaction kinetics

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Modulating structural oxygen/crystallinity enables ambient cascade photo-upgrading of biomass saccharides to lactic acid

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Carbon Energy 2025年第3期7卷 91-109页

作者： Jinshu Huang Yan Ding Jie Li Zhao Hu Shunmugavel Saravanamurugan Junqi Wang Yaqiong Su Song Yang Hu Li State Key Laboratory of Green Pesticide Key Laboratory of Green Pesticide&Agricultural BioengineeringMinistry of EducationState-Local Joint Laboratory for Comprehensive Utilization of BiomassCenter for R&D of Fine ChemicalsGuizhou UniversityGuiyangGuizhouChina Laboratory of Bioproduct Chemistry Centre of Innovative and Applied Bioprocessing(CIAB)MohaliPunjabIndia Department of Earth and Environmental Science School of Human Settlements and Civil EngineeringXi'an Jiaotong UniversityXi'anShaanxiChina School of Chemistry Engineering Research Center of Energy Storage Materials and Devices of Ministry of EducationNational Innovation Platform(Center)for Industry-Education Integration of Energy Storage TechnologyXi'an Jiaotong UniversityXi'anChina

Photocatalytic transformation of biomass into biofuels and value-added chemicals is of great significance for carbon ***-free carbon nitride has extensive applications but with almost no absorption and utilization of near-infrared light,accounting for 50%of ***,a molten salt-assisted in-plane“stitching”and interlayer“cutting”protocol is developed for constructing a highly crystalline carbon nitride catalyst containing structural oxygen(HC-CN).HC-CN is highly efficient for the photothermal cascade transformation of biomass-derived glucose into lactic acid(LA)with an unprecedented yield(94.3%)at 25°C under full-spectrum light irradiation within 50 min,which is also applicable to quantitatively photo-upgrading various *** calculations expound that the light-induced glucose-to-catalyst charge transfer can activate the Cβ-H bond to promote the rate-determining step of intramolecular hydrogen shift in glucose-to-fructose ***,the introduced structural oxygen in HC-CN can not only facilitate the local electric field formation to achieve rapid charge transport/separation and regulate selective·O^(-)_(2)generation for oriented C3-C4 bond cleavage of fructose but also narrow the energy band gap to broaden the light absorption range of HC-CN,contributing to enhanced LA production without exogenous ***,HC-CN is highly recyclable and exhibits negligible environmental burden and low energy consumption,as disclosed by the life cycle *** construction of full-spectrum light adsorption and versatile reaction sites provides a reference for implementing multi-step biomass and organic conversion processes under mild conditions.

关键词： biomass valorization lactic acid life cycle assessment photocatalysis pyroelectric effect

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Compositional engineering and performance optimization of β-(AlxGa1-x)2O3 Films via MOCVD Epitaxy

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Journal of Alloys and Compounds 2025年 1031卷

作者： Wang, Yao Wang, Long Dong, Yanbo Liu, Yuhong Feng, Qian Zhang, Yachao Zhang, Jincheng Hao, Yue State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology School of Microelectronics Xidian University Xi'an710071 China Shaanxi Joint Key Laboratory of Graphene School of Microelectronics Xidian University Xi'an710071 China State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xidian University Xi'an710071 China

This study systematically investigates the microstructural, electronic band, and interfacial properties of (AlxGa1-x)2O3 thin films with varying Al compositions, grown epitaxially on Ga2O3 substrates. Advanced characterization techniques, including X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), and geometric phase analysis (GPA), were employed to elucidate the mechanisms underlying the modulation of bandgap width, lattice strain, and defect distributions induced by Al doping. The results demonstrate that increasing the Al composition leads to a progressive enlargement of the bandgap width, while the formation of oxygen vacancies exhibits a non-linear trend, decreasing initially and subsequently increasing at higher Al concentrations. Moderate Al doping enhances the crystalline quality and bond strength of the thin films, whereas excessive Al incorporation introduces significant lattice strain and defect accumulation. Moreover, the (AlxGa1-x)2O3/Ga2O3 heterojunction interface exhibits excellent lattice matching, with the epitaxial Ga2O3 layer playing a critical role in mitigating interfacial stress. By optimizing epitaxial growth parameters, this work achieves precise control over the structural and electronic properties of (AlxGa1-x)2O3 thin films, providing both experimental insights and theoretical guidance for the development of high-performance wide-bandgap semiconductor devices. © 2025 Elsevier B.V.

关键词： Heterojunctions

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Dynamic tuning of terahertz atomic lattice vibration via cross-scale mode coupling to nanomechanical resonance in WSe2 membranes

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Microsystems & Nanoengineering 2025年第1期11卷 313-320页

作者： Bo Xu Zejuan Zhang Jiaze Qin Jiaqi Wu Luming Wang Jiankai Zhu Chenyin Jiao Wanli Zhang Juan Xia Zenghui Wang Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengdu 610054China Hubei Key Laboratory of Micro-Nanoelectronic Materials and Devices Hubei UniversityWuhan 430062China State Key Laboratory of Precision Measuring Technology and Instruments(Tianjin University) Tianjin 300350China School of Integrated Sciences and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu 610054China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of ChinaChengdu 610054China

Nanoelectromechanical systems(NEMS)based on atomically-thin tungsten diselenide(WSe_(2)),benefiting from the excellent material properties and the mechanical degree of freedom,offer an ideal platform for studying and exploiting dynamic strain engineering and cross-scale vibration coupling in two-dimensional(2D)***,such opportunity has remained largely unexplored for WSe_(2)NEMS,impeding exploration of exquisite physical processes and realization of novel device ***,we demonstrate dynamic coupling between atomic lattice vibration and nanomechanical resonances in few-layer WSe_(2)*** a custom-built setup capable of simultaneously detecting Raman and motional signals,we accomplish cross-scale mode coupling between the THz crystal phonon and MHz structural vibration,achieving GHz frequency tuning in the atomic lattice modes with a dynamic gauge factor of 61.9,the best among all 2D crystals reported to *** findings show that such 2D NEMS offer great promises for exploring cross-scale physics in atomically-thin semiconductors.

关键词： dynamic strain engineering dynamic tuning nanomechanical resonance cross scale mode coupling nanoelectromechanical systems terahertz atomic lattice vibration exploration exquisite physical processes nanoelectromechanical systems nems based

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Methods to improve the PCM yield of 12µm vanadium oxide uncooled infrared detector mass production process on 200mm Wafers 10

Methods to improve the PCM yield of 12µm vanadium oxide unc...

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10th Symposium on Novel Optoelectronic Detection technology and Applications

作者： Ning, Ning Zhou, HongXi Zhang, QiYu Gong, XiHuai Cai, ShengDong Si, Jing Peng, Pan Peng, LuLu Pan, BoJin Jiang, YaDong School of Optoelectronic Science and Engineering University of Electronic Science and Technology of China Chengdu610054 China State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Chengdu610054 China United Microelectronics Center Co. Ltd. Chongqing401332 China

ISBN: (数字)9781510688155

ISBN: (纸本)9781510688148

To address the technological challenges associated with mass production of 12 µm vanadium oxide (VOx) uncooled infrared detectors on the 200 mm fabrication platform, research efforts were focused on enhancing the electrical Process Control Monitoring (PCM) yield of the platform. The Titanium-enhanced Anchor process and low-stress silicon nitride films were applied to resolve issues such as poor connectivity of pixel contact chains, stress mismatch between low-temperature silicon nitride films and detector structures, and insufficient sidewall coverage. This approach resulted in a significant reduction in the failure rate of the detector's pixel via chain structure, effectively addressing issues such as pixel structure collapse due to stress mismatch and premature PI release caused by inadequate sidewall coverage. The PCM yield associated with the detector process improved to over 95%, thereby meeting the mass production requirements for the detector product. © 2025 SPIE.

关键词： Silicon nitride

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Polarization-encoded neural networks with simplified grating patch

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Science China(Technological Sciences) 2025年第2期68卷 269-277页

作者： Chengyan ZHONG Xiang WANG Lingfei LI Yuanchi CUI Lei XIAO Dawei SONG Junxiong GUO Wen HUANG Yufeng GUO Yu LIU College of Integrated Circuit Science and Engineering Nanjing University of Posts and TelecommunicationsNanjing 210023China National and Local Joint Engineering Laboratory of RF Integration and Micro-Assembly Technology Nanjing 210023China College of Integrated Circuits Hangzhou Global Scientific and Technological Innovation Centre Zhejiang UniversityHangzhou 310027China Nanjing Mumusili Technology Co. LTDNanjing 211100China School of Integrated Circuits Tsinghua UniversityBeijing 100084China Institute of Advanced Study School of Electronic Information and Electrical EngineeringChengdu UniversityChengdu 610106China State Key Laboratory of Electronic Thin Films and Integrated Devices School of Integrated Circuit Science and EngineeringUniversity of Electronic Science and Technology of ChinaChengdu 610054China

Optical neural networks(ONNs)offer a promising solution for high-performance,energy-efficient artificial intelligence hardware by leveraging the parallelism and speed of ***,the large-scale implementation of ONNs remains challenging due to the bulky footprint and complex control of optical *** this work,we propose and simulate a plasmonic polarized synaptic architecture that overcomes the diffraction limit and enables ultra-compact *** tuning the polarization state of incident light,the optical transmittance through each plasmonic unit can be dynamically adjusted to represent a synaptic *** plasmonic structures,with features as small as 40 nm,operate well below this limit in the visible spectrum(400-750 nm).Compared with diffraction and interference-based circuit designs,our proposed method achieves a substantial reduction in synaptic density by factors of 150000-fold and 1500-fold,***,we successfully demonstrate a proof-of-concept plasmonic ONN applied to the Canadian Institute for Advanced Research—10 classes(CIFAR-10)dataset using a Visual Geometry Group network with 16 layers(VGG16)*** training for 80 epochs,the network achieves an accuracy of 93%.The polarization-tunable plasmonics paves the way towards scalable ONNs for next-generation artificial intelligence(AI)accelerators and smart sensors.

关键词： optical neural networks polarization dependent nanophotonic ultra-compact devices diffraction limit

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High quality 6-inch single-crystalline AlN template for E-mode HEMT power device

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Journal of Semiconductors 2025年第3期46卷 96-101页

作者： Zhiwen Liang Shangfeng Liu Ye Yuan Tongxin Lu Xiaopeng Li Zirong Wang Neng Zhang Tai Li Xiangdong Li Qi Wang Shengqiang Zhou Kai Kang Jincheng Zhang Yue Hao Xinqiang Wang Songshan Lake Materials Laboratory Dongguan 523808China Guangzhou Wide Bandgap Semiconductor Innovation Center Guangzhou Institute of TechnologyXidian UniversityGuangzhou 510555China School of Physical Sciences Great Bay UniversityDongguan 523808China Helmholtz-Zentrum Dresden-Rossendorf Institute of Ion Beam Physics and Materials ResearchBautzner Landstrasse 40001328DresdenGermany Dongguan Institute of Opto-Electronics Peking University Dongguan 523808China Sinopatt.Technology Co. LtdSongshan LakeDongguan 523808China State Key Laboratory of Artificial Microstructure and Mesoscopic Physics School of PhysicsNan-oOptoelectronics Frontier Center of Ministry of Education(NFC-MOE)Peking UniversityBeijing 100871China State Key Laboratory of Wide Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China

In the present work,the high uniform 6-inch single-crystalline AlN template is successfully achieved by high temperature annealing technique,which opens up the path towards industrial application in power ***,the outstanding crystalline-quality is confirmed by Rutherford backscattering spectrometry(RBS).In accompanied with the results from X-ray diffraction,the RBS results along both[0001]and[1213]reveal that the in-plane lattice is effectively reordered by high temperature *** addition,the constantΦ_(epi)angle between[0001]and[1213]at different depths of 31.54°confirms the uniform compressive strain inside the AlN *** from the excellent crystalline quality of AlN template,we can epitaxially grow the enhanced-mode high electron mobility transistor(HEMT)with a graded AlGaN buffer as thin as only~300 *** an ultra-thin AlGaN buffer layer results in the wafer-bow as low as 18.1μm in 6-inch wafer *** fabricated HEMT devices with 16μm-L_(GD)exhibits a threshold voltage(V_(TH))of 1.1 V and a high OFF-state breakdown voltage(V_(BD))over 1400 ***,after 200 V high-voltage OFF-state stress,the current collapse is only 13.6%.Therefore,the advantages of both 6-inch size and excellent crystallinity announces the superiority of single-crystalline AlN template in low-cost electrical power applications.

关键词： single-crystalline allium nitride template E-mode HEMT

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High-spatiotemporal-resolution chip analysis using a fiber-coupled quantum sensor based on diamond N-V centers

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Physical Review Applied 2025年第2期23卷 024050-024050页

作者： Youwei Liu Fazhan Zhao Jing Li Zhenfeng Li Lei Wang Bo Li Key Laboratory of Science and Technology on Silicon Devices Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China School of Integrated Circuits University of Chinese Academy of Sciences 101408 Beijing China Communication and Information Engineering Center Institute of Microelectronics Chinese Academy of Sciences 100029 Beijing China

We propose a chip analysis method using a fiber-optic quantum sensor based on diamond nitrogen-vacancy (N-V) centers to capture the magnetic field associated with short-pulse currents in chips. The fiber-coupled diamond N-V sensor was precisely positioned at the target region of the chip. We performed real-time monitoring of the N-V center fluorescence responses to pulsing magnetic fields generated by the pulse signals in the test chip through continuous-wave optically detected magnetic resonance. This allowed the accurate reconstruction of the chip internal node signal variations. We successfully achieved a time resolution of 200 ns, which was consistent with the metastable state lifetime of the N-V centers at room temperature. Furthermore, we evaluated the shot noise–limited magnetic sensitivity, which was found to be 6.3nT/Hz1/2. The proposed system exhibited swift responsivity to short pulse currents in the chip, providing highly accurate spatial localization of magnetic field variations. It satisfied the demand for rapid response and precise positioning in chip testing. Overall, this study validates the potential application of N-V centers in the domain of chip security analysis, offering a solution for chip diagnostics.

关键词： Quantum optics

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Highly thermal conductivity flexible composite films based on alumina-boron nitride binary fillers

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Ceramics International 2025年

作者： Hu, Xin Sha, Xiaolu Zhao, Xinyu Li, Xin Gao, Wei Zhang, Kexiong Gao, Jinling Long, Ze Yu, Jinqiang Liang, Hongwei Yin, Hong State Key Laboratory of High Pressure and Superhard Materials College of Physics Jilin University Changchun130012 China School of Integrated Circuits Dalian University of Technology Dalian116024 China Dalian Key Laboratory of Wide Bandgap Semiconductor Devices Integration and System Dalian116024 China

Thermal interface materials (TIMs) exhibiting dual attributes of high thermal conductivity and excellent electrical insulation are urgently in demand for heat management of microelectronic devices. However, ultrahigh filler loadings that are often required for achieving high thermal conductivity would compromise the other properties such as softness and flowability of the composites. In this work, we present a straightforward and effective approach for highly thermally conductive polymer composites based on binary fillers of alumina (Al2O3) and boron nitride (BN) through a conventional hot-press method that is potential for the scalable production. Al2O3 and BN with different particle sizes and shapes are functionalized as binary fillers. By utilizing various gradation scheme based on Dinger-Funk particle stacking theory, the spherical Al2O3 composites achieve a thermal conductivity of 5.12 W m−1 K−1 with a maximum packing density. Further mixing with BN leads to flexible thin films with a remarkable thermal conductivity of 9.23 W m−1 K−1, which is ∼50 times that of pure silicon rubbers (0.18 W m−1 K−1). Meanwhile, the synthesized composites demonstrate electrically insulation, flexibility, compressibility, as well as remarkable stability even after cycled temperature shocks from room temperature to 120 °C, which are conducive to environmental adaptability for industrial applications. The results of this work offer a feasible strategy of synthesizing BN-based TIMs and pave the way for their large-scale practical implementation for effective thermal management. © 2025

关键词： Boron nitride

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