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检索条件"机构=Key Laboratory of Microelectronics Devices of Integrated Technology"
4802 条 记 录,以下是1-10 订阅
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Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range
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Chinese Journal of Electronics 2025年 第1期26卷 137-145页
作者: Yuhao Wang Sen Huang Qimeng Jiang Xinhua Wang Jie Fan Haibo Yin Ke Wei Yingkui Zheng Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences
“Ohmic-before-passivation” process was implemented on ultrathin-barrier AlGaN(<6 nm)/GaN heterostructure to further reduce the ohmic contact resistance(Rc). In this process, alloyed Ti/Al/Ni/Au ohmic metal wa... 详细信息
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An AND-type 1T-FeFET array with robust write and read operations
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Science China(Information Sciences) 2025年 第2期68卷 395-396页
作者: Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences
HfO2-based ferroelectric field-effect transistor(Fe FET) has become a promising solution for next-generation embedded non-volatile memory(NVM) owing to its complementary metal-oxide-semiconductor(CMOS) compatibi... 详细信息
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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT
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Science China(Information Sciences) 2025年 第1期68卷 379-385页
作者: Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials Laboratory School of Microelectronics Southern University of Science and Technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation
In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor(MIS) cascode anode GaN lateral field-effect diode(CA-LFED) to achieve ultralow reverse leakage current(ILEAK).The device based on AlGa... 详细信息
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A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory
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Science China(Information Sciences) 2023年 第5期66卷 303-304页
作者: Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China Zhejiang Lab
The emerging non-volatile memories (NVMs), including resistive random access memory (RRAM)[1], phase-change memory (PCM)[2], and ferroelectric random access memory (Fe RAM)[3], have broad application prospects owing t...
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Experimental and numerical demonstration of hierarchical time-delay reservoir computing based on cascaded VCSELs with feedback and multiple injections
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Science China(Information Sciences) 2024年 第2期67卷 279-290页
作者: Xingxing GUO Shuiying XIANG Xingyu CAO Biling GU State Key Laboratory of Integrated Service Networks Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian University
In this paper, we propose and demonstrate experimentally and numerically a hierarchical timedelay optical reservoir computing(RC) system based on cascaded vertical-cavity surface-emitting lasers(VCSELs) with feedback ... 详细信息
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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts
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Science China(Information Sciences) 2024年 第10期67卷 100-114页
作者: Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology
Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive... 详细信息
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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes
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IEEE Microwave and Wireless technology Letters 2025年 第4期35卷 444-447页
作者: Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China
Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of ... 详细信息
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Ultra-high-Q photonic crystal nanobeam cavity for etchless lithium niobate on insulator(LNOI)platform
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Opto-Electronic Advances 2025年 第1期8卷 59-70页
作者: Zhi Jiang Cizhe Fang Xu Ran Yu Gao Ruiqing Wang Jianguo Wang Danyang Yao Xuetao Gan Yan Liu Yue Hao Genquan Han State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China
The expansive spectral coverage and superior optical properties of lithium niobate(LN)offer a comprehensive suite of tools for exploring novel *** high-quality(Q)photonic resonator cavities is crucial for enhancing li... 详细信息
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Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications
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Science China(Information Sciences) 2023年 第6期66卷 313-314页
作者: Zhongxin LIANG Yang ZHAO Kaifeng WANG Jieyin ZHANG Jianjun ZHANG Ming LI Ru HUANG Qianqian HUANG Key Laboratory of Microelectronics Devices and Circuits (MOE) School of Integrated CircuitsPeking University Key Laboratory of Nanophysics and Devices Institute of PhysicsChinese Academy of Sciences Beijing Advanced Innovation Center for Integrated Circuits
Silicon-based tunneling field effect transistor(TFET) with a band-to-band tunneling mechanism has been widely studied due to its ultra-steep subthreshold swing(SS),ultralow leakage current(Ioff),and good complementary...
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Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors
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Rare Metals 2024年 第12期43卷 6516-6524页
作者: Guan-Qiao Sang Ren-Jie Jiang Yan-Zhao Wei Qing-Kun Li Mei-He Zhang Jia-Xin Yao Yi-Hong Lu Lei Cao Jun-Feng Li Xu-Lei Qin Qing-Zhu Zhang Hua-Xiang Yin Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing100029China School of Physics Changchun University of Science and TechnologyChangchun130013China University of Chinese Academy of Sciences Beijing100049China School of Information and Electronics Beijing Institute of TechnologyBeijing100081China
In order to effectively remove the residual Ge atoms at the surface of channel and improve the interfacial characteristic of gate-all-around(GAA)Si nanosheet field effect transistors,a low-temperature atomic-level tri... 详细信息
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