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Ultralow Ohmic Contact in Recess-Free Ultrathin Barrier AlGaN/GaN Heterostructures Across a Wide Temperature Range

Chinese Journal of Electronics 2025年第1期26卷 137-145页

作者： Yuhao Wang Sen Huang Qimeng Jiang Xinhua Wang Jie Fan Haibo Yin Ke Wei Yingkui Zheng Xinyu Liu Key Laboratory of Microelectronic Devices & Integrated Technology Institute of Microelectronics of the Chinese Academy of Sciences Institute of Microelectronics University of Chinese Academy of Sciences

“Ohmic-before-passivation” process was implemented on ultrathin-barrier AlGaN（<6 nm）/GaN heterostructure to further reduce the ohmic contact resistance（Rc）. In this process, alloyed Ti/Al/Ni/Au ohmic metal was formed first, followed by AlN/SiNxpassivation contributed to restore two-dimensional electron gas（2DEG） in the access region. Due to the sharp change in the concentration of 2DEG at the metal edge, a reduced transfer length consisted with lower Rcare achieved compared to that of ohmic contact on AlGaN（～20 nm）/GaN heterostructure with pre-ohmic recess process. Temperature-dependent current voltage measurements demonstrate that the carrier transport mechanism is dominated by thermionic field emission above 200 K and by field emission below 200 K. The “ohmic-before-passivation” process enables the relative stability of ohmic contacts between 50 K and 475 K and significantly improves the direct current characteristics of GaN-metal-insulator-semiconductor-high electron mobility transistor, offering a promising means for scaling down and enabling the utilization of low-voltage GaN-based power devices in extreme environmental conditions.

关键词： optimal CDG framework telecommunication network routing energy efficient WSN CS compressed sensing diffusion wavelet transform matrix optimal compressed data gathering framework wireless sensor network Measurement matrix telecommunication power management measurement matrix optimization algorithm compressed data measurement sparse representation optimal data aggregation tree algorithm energy consumption trees (mathematics) Compressed sensing (CS) signal representation Wireless sensor networks (WSNs) ODAT algorithm data transmission reduction wavelet transforms wireless sensor networks Optimal data aggregation tree (ODAT) MMOA energy consumption minimization routing technology energy conservation DWTM

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An AND-type 1T-FeFET array with robust write and read operations

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Science China(Information Sciences) 2025年第2期68卷 395-396页

作者： Jiacheng XU Jiayi ZHAO Hongrui ZHANG Haoji QIAN Jiani GU Bowen CHEN Gaobo LIN Rongzong SHEN Xinda SONG Huan LIU Yian DING Minglei MA Miaomiao ZHANG Xiao YU Bing CHEN Ran CHENG Gaobo XU Huaxiang YIN Yan LIU Jiajia CHEN Chengji JIN Genquan HAN Hangzhou Institute of Technology and School of Microelectronics Xidian University Zhejiang Lab College of Integrated Circuits Zhejiang University Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences

HfO2-based ferroelectric field-effect transistor（Fe FET） has become a promising solution for next-generation embedded non-volatile memory（NVM） owing to its complementary metal-oxide-semiconductor（CMOS） compatibility,small footprint, high performance, and non-destructive readout [1]. Recent research of HfO2-based Fe FET has focused on the device operation mechanisms as well as reliability issues such as the interplay between polarization switching and charge trapping/detrapping [2], read-after-write latency [3] and endurance degradation [4].

关键词： Ferroelectric devices

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

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Science China(Information Sciences) 2025年第1期68卷 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials Laboratory School of Microelectronics Southern University of Science and Technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

关键词： Schottky-MIS cascode anode lateral field-effect diode (LFED) ultralow reverse leakage current ($I_{\rm{LEAK}}$) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

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A Hf0.5Zr0.5O2 ferroelectric capacitor-based half-destructive read scheme for computing-in-memory

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Science China(Information Sciences) 2023年第5期66卷 303-304页

作者： Yulin ZHAO Yuan WANG Donglin ZHANG Zhongze HAN Qiao HU Xuanzhi LIU Qingting DING Jinhui CHENG Wenjun ZHANG Yue CAO Ruixi ZHOU Qing LUO Jianguo YANG Hangbing LV Key Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics University of Science and Technology of China Zhejiang Lab

The emerging non-volatile memories (NVMs), including resistive random access memory (RRAM)[1], phase-change memory (PCM)[2], and ferroelectric random access memory (Fe RAM)[3], have broad application prospects owing to their non-volatility and near-zero static energy consumption. Compared to other NVMs, ferroelectric capacitors(Fe CAPs) ofer advantages in energy consumption and endurance. However, the destructive read operation of capacitors (e.g., DRAMs and Fe CAPs) destroys the stored data.

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Experimental and numerical demonstration of hierarchical time-delay reservoir computing based on cascaded VCSELs with feedback and multiple injections

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Science China(Information Sciences) 2024年第2期67卷 279-290页

作者： Xingxing GUO Shuiying XIANG Xingyu CAO Biling GU State Key Laboratory of Integrated Service Networks Xidian University State Key Discipline Laboratory of Wide Bandgap Semiconductor Technology School of MicroelectronicsXidian University

In this paper, we propose and demonstrate experimentally and numerically a hierarchical timedelay optical reservoir computing(RC) system based on cascaded vertical-cavity surface-emitting lasers(VCSELs) with feedback and multiple injections. The prediction performance characteristics of the hierarchical time-delay RC system based on cascaded VCSELs under different reservoir layers are ***, the prediction performance of the hierarchical time-delay RC system is first improved and saturates as the number of reservoir layers increases. Besides, the impacts of key factors on predicting the hierarchical time-delay RC system are also analyzed in detail experimentally and numerically. This proposed hierarchical time-delay RC system based on VCSELs is useful for the further development of RC systems and may be beneficial to improve the ability of RC systems to solve more complex problems.

关键词： vertical-cavity surface-emitting laser reservoir computing neuromorphic photonics time-delay system information processing

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CMN: a co-designed neural architecture search for efficient computing-in-memory-based mixture-of-experts

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Science China(Information Sciences) 2024年第10期67卷 100-114页

作者： Shihao HAN Sishuo LIU Shucheng DU Mingzi LI Zijian YE Xiaoxin XU Yi LI Zhongrui WANG Dashan SHANG Department of Electrical and Electronic Engineering The University of Hong Kong ACCESS-AI Chip Center for Emerging Smart Systems InnoHK Centers Key Lab of Fabrication Technologies for Integrated Circuits Chinese Academy of Sciences Laboratory of Microelectronics Devices and Integrated Technology Institute of MicroelectronicsChinese Academy of Sciences University of Chinese Academy of Sciences School of Microelectronics Southern University of Science and Technology

Artificial intelligence(AI) has experienced substantial advancements recently, notably with the advent of large-scale language models(LLMs) employing mixture-of-experts(MoE) techniques, exhibiting human-like cognitive skills. As a promising hardware solution for edge MoE implementations, the computing-in-memory(CIM) architecture collocates memory and computing within a single device, significantly reducing the data movement and the associated energy consumption. However, due to diverse edge application scenarios and constraints, determining the optimal network structures for MoE, such as the expert's location,quantity, and dimension on CIM systems remains elusive. To this end, we introduce a software-hardware co-designed neural architecture search(NAS) framework, CIM-based MoE NAS(CMN), focusing on identifying a high-performing MoE structure under specific hardware constraints. The results of the NYUD-v2 dataset segmentation on the RRAM(SRAM) CIM system reveal that CMN can discover optimized MoE configurations under energy, latency, and performance constraints, achieving 29.67×(43.10×) energy savings,175.44×(109.89×) speedup, and 12.24× smaller model size compared to the baseline MoE-enabled Visual Transformer, respectively. This co-design opens up an avenue toward high-performance MoE deployments in edge CIM systems.

关键词： mixture-of-experts computing-in-memory neural architecture search resistive random-access memory static random-access memory

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Design and Fabrication of Milliwatt and Microwatt Microwave Rectifiers Based on Low Turn-On GaN Schottky Barrier Diodes

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IEEE Microwave and Wireless technology Letters 2025年第4期35卷 444-447页

作者： Li, Qiu-Xuan Li, Yang Liu, Tao Huang, Ren-Pin Zhu, Xia Liu, Peng-Bo Wang, Xiao Chen, Zhi-Wei You, Jie Liu, Zhang-Cheng Ao, Jin-Ping Jiangnan University School of Integrated Circuits Wuxi214122 China Xidian University State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of Microelectronics Xi'an710071 China

Low turn-on GaN Schottky barrier diodes (SBDs) and dedicated rectifiers for microwatt and milliwatt microwave rectification are designed and fabricated for the first time. GaN SBDs with a low turn-on voltage (Von) of 0.32 V, a cutoff frequency (fT) of 139.47 GHz, a breakdown voltage (Vb) of 30 V, and fT × Vb/Von figure of merit (FOM) up to 13.08 THz are achieved by carefully controlling the Ti/N ratios of Schottky anode. Milliwatt and microwatt rectifiers are designed utilizing customized low turn-on GaN SBDs. The measured maximum efficiency of 84.16% and 64.36% as well as ultrawide power dynamic range of 27 dB (-7 to 20 dBm) for milliwatt rectifier and 22 dB (-12 to 10 dBm) for microwatt rectifier are obtained. The result underscores the significant potential of GaN SBDs in applications not only limited to high-power scenarios but also extended to the milliwatt and microwatt regimes of microwave energy harvesting. © 2023 IEEE.

关键词： Gallium nitride

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Ultra-high-Q photonic crystal nanobeam cavity for etchless lithium niobate on insulator(LNOI)platform

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Opto-Electronic Advances 2025年第1期8卷 59-70页

作者： Zhi Jiang Cizhe Fang Xu Ran Yu Gao Ruiqing Wang Jianguo Wang Danyang Yao Xuetao Gan Yan Liu Yue Hao Genquan Han State Key Laboratory of Wide-Bandgap Semiconductor Devices and Integrated Technology School of MicroelectronicsXidian UniversityXi’an 710071China Key Laboratory of Light Field Manipulation and Information Acquisition Ministry of Industry and Information Technologyand Shaanxi Key Laboratory of Optical Information TechnologySchool of Physical Science and TechnologyNorthwestern Polytechnical UniversityXi’an 710129China Hangzhou Institute of Technology Xidian UniversityHangzhou 311200China

The expansive spectral coverage and superior optical properties of lithium niobate(LN)offer a comprehensive suite of tools for exploring novel *** high-quality(Q)photonic resonator cavities is crucial for enhancing light-matter ***,this task is challenging as the device performance is heavily dependent on the fabrication quality of the *** this paper,we present experimental validation of an etchless approach to fabricating high-Q photonic crystal nanobeam cavities(PCNBCs).We successfully fabricate PCNBCs with Q factors exceeding 105 while maintaining high transmittance by capitalizing on the low waveguide loss and high fabrication tolerance of TE-polarized ***,the Q factor achieved here exceeds previous reports on etchless LN PCNBCs by over an order of *** from this advancement,we further explore a variety of optical functions,including thermo-optic tuning,optically induced bistability,and Fano line shapes *** findings present promising prospects for a versatile platform technique,facilitating the development of high-performance electro-optic or acousto-optic modulators,optical logic devices,and quantum photonics,highlighting its significant impact in the field of photonic integration.

关键词： photonic crystal nanobeam cavity LNOI platform high Q thermo-optic tuning bistability Fano line shapes

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Experimental investigation of a novel junction-modulated hetero-layer tunnel FET with the striped gate for low power applications

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Science China(Information Sciences) 2023年第6期66卷 313-314页

作者： Zhongxin LIANG Yang ZHAO Kaifeng WANG Jieyin ZHANG Jianjun ZHANG Ming LI Ru HUANG Qianqian HUANG Key Laboratory of Microelectronics Devices and Circuits (MOE) School of Integrated CircuitsPeking University Key Laboratory of Nanophysics and Devices Institute of PhysicsChinese Academy of Sciences Beijing Advanced Innovation Center for Integrated Circuits

Silicon-based tunneling field effect transistor(TFET) with a band-to-band tunneling mechanism has been widely studied due to its ultra-steep subthreshold swing(SS),ultralow leakage current(Ioff),and good complementary...

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Low-temperature atomic-level trimming on Ge interfused surface for gate-all-around Si nanosheets transistors

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Rare Metals 2024年第12期43卷 6516-6524页

作者： Guan-Qiao Sang Ren-Jie Jiang Yan-Zhao Wei Qing-Kun Li Mei-He Zhang Jia-Xin Yao Yi-Hong Lu Lei Cao Jun-Feng Li Xu-Lei Qin Qing-Zhu Zhang Hua-Xiang Yin Key Laboratory of Microelectronics Devices and Integrated Technology Integrated Circuit Advanced Process Center(ICAC)Institute of MicroelectronicsChinese Academy of SciencesBeijing100029China School of Physics Changchun University of Science and TechnologyChangchun130013China University of Chinese Academy of Sciences Beijing100049China School of Information and Electronics Beijing Institute of TechnologyBeijing100081China

In order to effectively remove the residual Ge atoms at the surface of channel and improve the interfacial characteristic of gate-all-around(GAA)Si nanosheet field effect transistors,a low-temperature atomic-level trimming approach using ammonia peroxide water mixture(APM)solution treatment followed by diluted hydrofluoric acid is proposed and carried *** capacitor samples with SiGe epitaxy layer,similar thermal budget and channel release process were fabricated using advanced high-k/*** 83%reduction in surface roughness at atomic level is obtained by increasing APM treatment ***,there are 99.45% reduction in the interface state density(D_(it))and 96.8%leakage reduction in current density(J_(g))after APM treatment,indicating a promising method for future GAA NSFET performance optimization.

关键词： Gate-all-around Nanosheet Trimming Ammonia peroxide water mixture Low temperature Interface state density

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