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Hybrid Dirac semimetal-based photodetector with efficient low-energy photon harvesting

Light(science & Applications) 2022年第3期11卷 107-116页

作者： Lin Wang Li Han Wanlong Guo Libo Zhang Chenyu Yao Zhiqingzi Chen Yulu Chen Cheng Guo Kaixuan Zhang Chia-Nung Kuo Chin Shan Lue Antonio Politano Huaizhong Xing Mengjie Jiang Xianbin Yu Xiaoshuang Chen Wei Lu State Key Laboratory for Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences500 Yu-tian RoadShanghai 200083China Department of Optoelectronic Science and Engineering Donghua UniversityShanghai 201620China College of Physics and Optoelectronic Engineering Hangzhou Institute for Advanced StudyUniversity of Chinese Academy of SciencesNo.1Sub-Lane XiangshanXihu DistrictHangzhou 310024China School of Physical Science and Technology ShanghaiTech UniversityShanghai 201210China The 50th Research Institute of China Electronics Technology Group Shanghai 200331China Research Center for Intelligent Network Zhejiang LabHangzhou 311121China Department of Physics Cheng Kung University1 Ta-Hsueh Road70101 TainanTaiwanChina INSTM and Department of Physical and Chemical Sciences University of L’Aquilavia Vetoio67100 L’Aquila(AQ)Italy CNR-IMM Istituto per la Microelettronica e Microsistemi VIII strada 5I-95121 CataniaItaly

Despite the considerable effort,fast and highly sensitive photodetection is not widely available at the low-photon-energy range(~meV)of the electromagnetic spectrum,owing to the challenging light funneling into small active areas with efficient conversion into an electrical ***,we provide an alternative strategy by efficiently integrating and manipulating at the nanoscale the optoelectronic properties of topological Dirac semimetal PtSe_(2)and its van der Waals ***,we realize strong plasmonic antenna coupling to semimetal states near the skin-depth regime(λ/10^(4)),featuring colossal photoresponse by in-plane symmetry *** observed spontaneous and polarization-sensitive photocurrent are correlated to strong coupling with the nonequilibrium states in PtSe_(2)Dirac semimetal,yielding efficient light absorption in the photon range below 1.24 meV with responsivity exceeding∼0.2 A/W and noise-equivalent power(NEP)less than~38 pW/Hz^(0.5),as well as superb ambient *** results pave the way to efficient engineering of a topological semimetal for high-speed and low-energy photon harvesting in areas such as biomedical imaging,remote sensing or security applications.

关键词： stability Dirac topological

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A pilot survey on globular clusters with the Wide Field Survey Telescope (WFST)

arXiv

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arXiv 2025年

作者： Wan, Zhen Fan, Lulu Li, Xuzhi Kong, Xu Wang, Tinggui Zhu, Qingfeng Jiang, Ji-An Cai, Minxuan Xu, Zelin Zheng, Xianzhong Cheng, Jingquan Li, Feng Liang, Ming Liu, Hao Luo, Wentao Tang, Jinlong Wang, Hairen Wang, Jian Xue, Yongquan Yao, Dazhi Zhang, Hongfei Zhao, Wen Department of Astronomy University of Science and Technology of China Hefei230026 China School of Astronomy and Space Science University of Science and Technology of China Hefei230026 China School of Mathematics and Physics Anqing Normal University Anqing246133 China Institute of Astronomy and Astrophysics Anqing Normal University Anhui Anqing246133 China Institute of Deep Space Sciences Deep Space Exploration Laboratory Hefei230026 China National Astronomical Observatory of Japan National Institutes of Natural Sciences Tokyo181-8588 Japan Tsung-Dao Lee Institute Key Laboratory for Particle Physics Astrophysics and Cosmology Ministry of Education Shanghai Jiao Tong University Shanghai201210 China Purple Mountain Observatory Chinese Academy of Sciences Nanjing210023 China State Key Laboratory of Particle Detection and Electronics University of Science and Technology of China Hefei230026 China National Optical Astronomy Observatory [NSF’s National Optical-Infrared Astronomy Research Laboratory 950 N Cherry Ave TucsonAZ85726 United States Institute of Optics and Electronics Chinese Academy of Sciences Chengdu610209 China

We carry out an imaging survey of six globular clusters (GCs) with a limit magnitude to 22 mag at the 5σ level, down to the main sequence stars of the respective cluster, as one of the pilot observing program of the Wide Field Survey Telescope (WFST). This paper present the early results of this survey, where we investigate the tidal characters at the periphery of the clusters NGC 4147, NGC 5024, NGC 5053, NGC 5272, NGC 5904 and NGC 6341. We present the estimated number density of cluster candidates and their spatial distribution. We confirm the presence of tidal arms in NGC 4147 and NGC 5904 and identify several intriguing potential tidal structures in NGC 4147, NGC 5024, NGC 5272, corroborated the elliptical morphology of the periphery of NGC 6341. WFST shows its ability to detect faint main-sequence stars of clusters beyond 15 kpc in helio-centric distance. Our findings underscore WFST’s capability for probing faint structural features in GCs, paving the way for future in-depth studies, especially for the search of the large scale tidal streams associated with the clusters with the future wide field survey. © 2025, CC BY.

关键词： Hydrographic surveys

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Damage characteristics of VO2 films under nanosecond/picosecond laser

Damage characteristics of VO2 films under nanosecond/picosec...

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2019 International Conference on Optoelectronic science and Materials, ICOSM 2019

作者： Lu, Yuan Feng, Yunsong Chen, Leilei Wu, Chang Infrared and Low Temperature Plasma Key Laboratory of Anhui Province Hefei230037 China State Key Laboratory of Pulsed Power Laser Technology Hefei230037 China National Synchronous Radiation Laboratory University of Science and Technology of China Hefei230037 China 460 Huangshan Road Hefei city Anhui Province China

Vanadium dioxide films were prepared by magnetron sputtering method. An experimental apparatus for laser damaging VO2 thin film was set up. Nanosecond laser and picosecond lasers were used to irradiate the thin film. The damage morphology of the thin film under these two kinds of laser was observed by metallographic microscope. Under the action of nanosecond laser, the damage of thin film is mainly thermal damage, which is mainly determined by the energy contained in the laser pulse itself, and the required damage threshold is relatively higher. The zero probability damage threshold of monopulse irradiate the film is about 0.13J/*** femtosecond laser, the damage of thin film is caused by multi-photon ionization and avalanche ionization, and the damage threshold is relatively lower. The zero probability damage threshold of monopulse irradiate the film is about 10.2m J/cm2. © Published under licence by IOP Publishing Ltd.

关键词： Thin films

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Dynamically reconfigurable subwavelength optical device for hydrogen sulfide gas sensing

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Photonics Research 2021年第10期9卷 2060-2067页

作者： ZHENGJI WEN JIALIANG LU WEIWEI YU HAO WU HAO XIE XIAOHANG PAN QIANQIAN XU ZIJI ZHOU CHONG TAN DONGJIE ZHOU CHANG LIU YAN SUN NING DAI JIAMING HAO State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of SciencesShanghai 200083China Key Laboratory of Artificial Micro-and Nano-structures of Ministry of Education School of Physics and TechnologyWuhan UniversityWuhan 430072China Hangzhou Institute for Advanced Study University of Chinese Academy of SciencesHangzhou 310024China Institute of Precision Optical Engineering School of Physics Science and EngineeringTongji UniversityShanghai 200092China

The importance of tunable subwavelength optical devices in modern electromagnetic and photonic systems is ***,a lithography-free,wide-angle,and reconfigurable subwavelength optical device with high tunability operating in the near-infrared regions is proposed and experimentally demonstrated,based on a reversible nanochemistry *** reconfigurable subwavelength optical device basically comprises an ultrathin copper oxide(CuO)thin film on an optical thick gold substrate by utilizing the reversible chemical conversion of CuO to sulfides upon exposure to hydrogen sulfide ***-of-concept experimental results show that the maximal modulation depth of reflectance can be as high as 90%at the wavelength of 1.79μm with the initial thickness of CuO taken as 150 *** reflected wave calculations combined with the transfer matrix method are employed to analytically investigate the optical properties of the structure,which show good agreement with experimental *** believe that the proposed versatile approaches can be implemented for dynamic control management,allowing applications in tunable photonics,active displays,optical encryption,and gas sensing.

关键词： reconfigurable optical tunable

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A study on ionic gated MoS2 phototransistors

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science China(Information sciences) 2019年第12期62卷 133-140页

作者： Binmin WU Xudong WANG Hongwei TANG Tie LIN Hong SHEN Weida HU Xiangjian MENG Wenzhong BAO Jianlu WANG Junhao CHU School of Physical Science and Technology Shanghai Tech University State Key Laboratory of Infrared Physics Shanghai Institute of Technical PhysicsChinese Academy of Sciences University of Chinese Academy of Sciences State Key Laboratory of ASIC and System School of Microelectronics Fudan University

Molybdenum disulfide（MoS2） holds great promise in the future applications of nanoelectronics and optoelectronic devices. Exploring those interesting physical properties of MoS2using a strong electric field provided by electrolyte-gel is a robust approach. Here, we fabricate an Mo S2 phototransistor gated by electrolyte-gel which is located on a fused silica substrate. Under the modulation of electrolyte-gel, the Schottky barrier between MoS2and source/drain electrodes can be widely regulated from 11 to 179 me V. The MoS2phototransistor exhibits excellent responsivity of 2.68 × 10～4 A/W and detectivity of 9.6 × 1010 Jones under visible incident light at negative gate voltage modulation. We attribute the optoelectronic performance enhancement to the Schottky barrier modulation of electrolyte-gel gating. It makes the device suitable for applications in high-sensitive photodetectors.

关键词： MoS2 phototransistor electrolyte-gel gating Schottky barrier electric double layer two-dimensional materials

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Q-factor mediated quasi-BIC resonances coupling in asymmetric dimer lattices

arXiv

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arXiv 2022年

作者： Gao, Yixiao Xu, Lei Shen, Xiang Laboratory of Infrared Materials and Devices Research Institute of Advanced Technologies Ningbo University Zhejiang Ningbo315211 China Advanced Optics & Photonics Laboratory Department of Engineering School of Science and Technology Nottingham Trent University NottinghamNG11 8NS United Kingdom Key Laboratory of Photoelectric Detection Materials and Devices of Zhejiang Province Zhejiang Ningbo315211 China Engineering Research Center for Advanced Infrared Photoelectric Materials and Devices of Zhejiang Province Ningbo University Ningbo315211 China

Resonance coupling in the regime of bound states in the continuum (BICs) provides an efficient method for engineering nanostructure’s optical response with various lineshape while maintaining an ultra-narrow linewidth feature, where the quality factor of resonances plays a crucial role. Independent manipulation of the Q factors of BIC resonances enables full control of interaction behavior as well as both near- and far-field light engineering. In this paper, we harness reflection symmetry (RS) and translational symmetry (TS) protected BIC resonances supported in an asymmetric dimer lattice and investigate Q-factor-mediated resonance coupling behavior under controlled TS and RS perturbations. We focus on in-plane electrical dipole BIC (EDi-BIC) and magnetic dipole BIC (MD-BIC) which are protected by RS, and out-of-plane electrical dipole BIC (EDo-BIC) protected by TS. The coupling between EDi-BIC and EDo-BIC exhibits a resonance crossing behavior where the transmission spectrum at the crossing could be tuned flexibly, showing an electromagnetically induced transparency lineshape or satisfying the lattice Kerker condition with pure phase modulation capability depending on TS and RS perturbed Q factors. While the coupling between MD-BIC and EDo-BIC shows an avoided resonance crossing behavior, where the strongly coupled resonances would lead to the formation of a Friedrich–Wintgen BICs whose spectral position could also be shifted by tuning the Q factors. Our results suggest an intriguing platform to explore BIC resonance interactions with independent Q factor manipulation capability for realizing multifunctional meta-devices. Copyright © 2022, The Authors. All rights reserved.

关键词： Q factor measurement

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Charge density waves and metal-insulator transition in TaSe2

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Physical Review B 2021年第11期104卷 115136-115136页

作者： Benrui Huang Lin Wang Ni Ma Kaiyi Li Jingpeng Song Gang Chen Ang Li State Key Laboratory of Functional Materials for Informatics Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai 200050 China Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 China State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai 200083 China School of Physical Science and Technology ShanghaiTech University Shanghai 201210 China

Using scanning tunneling microscopy/spectroscopy (STM/STS), we investigate the local atomic and electronic structure of the archetype charge density wave (CDW) system TaSe2. Two structural phases with distinct CDW orders, namely 3×3−2H and 13×13−1T phases, coexist at low temperatures and an intermediate phase is discovered around the phase boundaries demonstrating energy-dependent 2H and 1T electronic wave-function textures. The existence of such an intermediate state and its dual electronic appearance indicate that the 2H−1T transition is not instantaneous. Along with the gradual recovery of 13×13−1T lattice distortions towards the 2H phase, an insulator-metal transition occurs as evidenced by the collapse of the Mott insulating gap. Our results provide a direct visualization of the strong link between the Mott insulating state and the local lattice distortions.

关键词： Charge density waves Mott insulators Transition metal dichalcogenides Scanning tunneling microscopy

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Analytical impact excitation of Er/O/B co-doped Si light emitting diodes

arXiv

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arXiv 2024年

作者： Wang, Xiaoming He, Jiajing Wang, Ao Zhang, Kun Sheng, Yufei Hu, Weida Jin, Chaoyuan Bao, Hua Dan, Yaping University of Michigan Shanghai Jiao Tong University Joint Institute Shanghai Jiao Tong University Shanghai200240 China Global Institute of Future Technology Shanghai Jiao Tong University Shanghai200240 China State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences 500 Yu Tian Road Shanghai200083 China College of Information Science and Electronic Engineering Zhejiang University Hangzhou310007 China

Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to impact excitation. However, physics of impact excitation in these devices remains largely unexplored. In this work, we fabricated an Er/O/B co-doped Si light emitting diode which exhibits a strong electro-luminescence by the impact excitation of electrons inelastically colliding the Er ions. An analytical impact excitation theory was established to predict the electroluminescence intensity and internal quantum efficiency which fit well with the experimental data. From the fittings, we find that the excitable Er ions reach a record concentration of 1.9 × 1019 cm-3 and up to 45% of them are in excitation state by impact excitation. This work has important implications for developing efficient classical and quantum light sources based on rare earth elements. © 2024, CC BY.

关键词： Light emitting diodes

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Anomalous Polarization-Switching Phenomena and Noteworthy Pyroelectricity in Ferroelectric Hf0.5zr0.5o2 Polycrystalline Films

SSRN

引用

SSRN 2023年

作者： Wang, Xudong Zhou, Yong Xiong, Ke Wu, Shuyu Tu, Luqi Chen, Yan Wu, Shuaiqin Zeng, Jinhua Zheng, Yuqing Gu, Shiqun Luo, Man Lin, Tie Shen, Hong Meng, Xiangjian Liu, Qi Chu, Junhao Wang, Jianlu State Key Laboratory of Infrared Physics Shanghai Institute of Technical Physics Chinese Academy of Sciences Shanghai200083 China Key Laboratory of Microelectronics Device and Integrated Technology Institute of Microelectronics Chinese Academy of Sciences Beijing100029 China Frontier Institute of Chip and System Fudan University Shanghai200433 China Shanghai Frontier Base of Intelligent Optoelectronics and Perception Institute of Optoelectronics Fudan University Shanghai200433 China Hangzhou Institute for Advanced Study University of Chinese Academy of Sciences Chinese Academy of Sciences Hangzhou330106 China BirenTech Shanghai201114 China Jiangsu Key Laboratory of ASIC Design School of Information Science and Technology Nantong University Jiangsu Nantong226019 China

Hafnia-based oxide thin films exhibit unconventional robust ferroelectricity at the nanoscale, paving the way for advancements in next-generation nanoelectronics. However, the stability and dynamics of ferroelectric polarization in hafnia-based oxides films, particularly at the nanoscale, warrant further exploration. In this study, we delve into the factors influencing the formation of the ferroelectric phase. Our findings illuminate that the confinement effect of the capped layer enhances the stabilization of the metastable orthorhombic phase, thereby bolstering its ferroelectricity and endurance. Furthermore, we identify an unprecedented polarization-switching behavior in HfO2-based ferroelectric films, characterized by a decrease in the remanent polarization and an increase in the coercive field as the temperature drops. This peculiar phenomenon can be ascribed to the reduction in the long-range interaction of polarization dipoles upon cooling, as evidenced by the dielectric spectrum. The diminished long-range interaction results in the emergence of nanodomains and a re-entrant relaxer behavior, offering novel insights into the origin of ferroelectricity and the stability of ferroelectric polarization in hafnia-based thin films. Given the commendable compatibility of Hf0.5Zr0.5O2 films with Si substrates and a pyroelectric coefficient of -62.1 μC/m2·K, they emerge as a prime candidate for sensor device applications. © 2023, The Authors. All rights reserved.

关键词： Thin films

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Study of glass transition kinetics of As_2S_3 and As_2Se_3 by ultrafast differential scanning calorimetry

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Chinese Physics B 2019年第4期28卷 349-352页

作者： Fan Zhang Yimin Chen Rongping Wang Xiang Shen Junqiang Wang Tiefeng Xu Laboratory of Infrared Material and Devices & Key Laboratory of Photoelectric Materials and Devices of Zhejiang ProvinceAdvanced Technology Research Institute Ningbo University Department of Microelectronic Science and Engineering Faculty of Science Ningbo University CAS Key Laboratory of Magnetic Materials and Devices & Zhejiang Province Key Laboratory of Magnetic Materials and Application TechnologyNingbo Institute of Materials Technology & Engineering Chinese Academy of Sciences (CAS) Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences

Ultrafast differential scanning calorimetry(DSC) was employed to investigate the glass transition kinetics of As_2S_3 and As_2Se_3 . By using the Arrhenius method, a fragility index of～22 can be estimated in both As_2S_3 and As_2Se_3 .However, when the scanning rate is more than 200 K·s^(-1), non-Arrhenius behavior can be observed in such "strong" liquids where the Vogel–Fulcher method is more accurate to describe the glass transition kinetics. The fragilities of As_2S_3 and As_2Se_3 glasses are thus extrapolated as 28.3±1.94 and 23.7±1.80, respectively. This indicates that, As_2Se_3 glass has a better structural stability and it is a better candidate for device applications.

关键词： ultrafast DSC glass transition kinetics fragility index

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