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Ultra-flexible graphene/nylon/PDMS coaxial fiber-shaped multifunctional sensor

Nano Research 2023年第4期16卷 5541-5547页

作者： Peddathimula Puneetha Siva Pratap Reddy Mallem Sung Cheol Park Seoha Kim Dong Hun Heo Cheol Min Kim Jaesool Shim Sung Jin An Dong-Yeon Lee Kwi-Il Park Department of Robotics and Intelligent Machine Engineering/College of Mechanical and IT Engineering Yeungnam UniversityGyeongsan 38541Republic of Korea School of Materials Science and Engineering Kyungpook National UniversityDaegu 41566Republic of Korea Advanced Material Research Center Kumoh National Institute of TechnologyGumi 39177Republic of Korea School of Mechanical Engineering Yeungnam UniversityGyeongsan 38541Republic of Korea Department of Materials Science and Engineering Kumoh National Institute of TechnologyGumi 39177Republic of Korea

The development of flexible and wearable devices is mainly required for tactile sensing;as such devices can adapt to complicated nonuniform surfaces,they can be applied to the human ***,it remains necessary to simultaneously achieve small-scale,portable,and stable developments in such ***,this work aims at fabricating a novel,lightweight,ultra-flexible,and fiber-shaped coaxial structure with a diameter of 0.51 mm using polydimethylsiloxane/graphene/nylon material,based on piezoresistive and triboelectric *** piezoresistive-based robotic-hand-controlled sensor thus realized exhibits a response time of 120 ms and a fast recovery time of 55 ***,the piezoresistive-based sensors effectively feature whisker/joystick-guided behaviors and also sense the human finger *** to the triboelectric-based selfpowered nanogenerator behavior,the resulting sensor can convert mechanical motion into electrical energy,without adversely affecting human ***,this triboelectric-based human finger sensor can be operated under different bending modes at specific ***,this multifunctional sensor is cost-effective and suitable for various applications,including robotichand-controlled operations in medical surgery,whisker/joystick motions in lightweight drone technology,and navigation with highsensitivity components.

关键词： extremely lightweight ultra-flexible piezoresistive/triboelectric sensor human-machine whisker

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Gadolinium modified g-C_(3)N_(4)for S-Scheme heterojunction with monoclinic-WO_(3):Insights from DFT studies and related charge carrier dynamics

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Journal of materials science & Technology 2025年第1期204卷 166-176页

作者： Kavya Kalidasan Srinivas Mallapur Bhavana B Kulkarni Sanjeev P Maradur Deepak Kumar R Deeksha Sakthivel Kandaiah Prashanth Vishwa S.Girish Kumar Department of Chemistry School of Applied SciencesREVA UniversityKattigenahalliYelahankaBengaluru 560064India Material Science and Catalysis Division Poornaprajna Institute of Scientific ResearchBengaluru 562164India Department of Chemistry M.S Ramaiah University of Applied SciencesBengaluru 560054India Department of Chemistry and Centre for Nanomaterials and Devices RV College of EngineeringBengaluru 560059India

Modifying the surface structures of g-C_(3)N_(4) through interfacial coupling with other semiconductors has been spotlighted as an efficient approach for improving photocatalytic *** the surge of S-scheme heterojunctions,the research is intensified towards designing this kind of composite for energy-environmental-related *** this context,a new approach involving surface modifications of g-C_(3)N_(4) through Gd species and integrating with monoclinic-WO_(3) via a wet chemical approach to form S-scheme heterojunctions is *** characterization results attested that the adopted protocol promotes the better dispersion of Gd species over the g-C_(3)N_(4) surface and rigidly integrates with WO_(3).The optical response of the composite spanned a significant portion of the visible region in the solar *** computational studies and the findings of the Mott-Schottky plot collectively suggested that the position of band edges qualifies for the formation of S-scheme *** results derived from photocurrent response measurements and photoluminescence technique attribute to the effective charge carrier separation in the *** rate constant of Gd-g-C_(3)N_(4)/WO_(3) was 1.48×10^(-2) min^(-1) which was approximately 4.35 and 2.27 times greater than that of WO_(3)(0.34×10^(-2) min^(-1))and g-C_(3)N_(4)/WO_(3)(0.65×10^(-2) min^(-1))***,RhB degradation in the presence of scav-engers validated the participation of superoxide and hydroxyl radicals in the degradation *** was possible only when the conduction band electrons of WO_(3) recombined with the valence band holes of Gd-modified g-C_(3)N_(4).The present work helps to understand the S-scheme heterojunction forma-tion between surface-modified g-C_(3)N_(4) and metal oxides and retain the involvement of energetic charge carriers in the desired redox reactions.

关键词： g-C_(3)N_(4)/WO_(3) S-Scheme heterojunction DFT calculations Interface engineering Photocatalysis Free radicals

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Direct Synthesis of Layer-Tunable and Transfer-Free Graphene on Device-Compatible Substrates Using Ion Implantation Toward Versatile Applications

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Energy & Environmental materials 2024年第5期7卷 408-418页

作者： Bingkun Wang Jun Jiang Kevin Baldwin Huijuan Wu Li Zheng Mingming Gong Xuehai Ju Gang Wang Caichao Ye Yongqiang Wang Department of Microelectronic Science and Engineering School of Physical Science and TechnologyNingbo UniversityNingbo 315211China Key Laboratory of Soft Chemistry and Functional Materials of MOE School of Chemistry and Chemical Engineering Nanjing University of Science and TechnologyNanjing 210094China Center for Integrated Nanotechnologies Los Alamos National LaboratoryLos Alamos 87545New MexicoUSA National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information TechnologyChinese Academy of SciencesShanghai 200050China Academy for Advanced Interdisciplinary Studies&Department of Materials Science and Engineering Southern University of Science and TechnologyShenzhen 518055China Guangdong Provincial Key Laboratory of Computational Science and Material Design Southern University of Science and TechnologyShenzhen 518055China Materials Science and Technology Division Los Alamos National LaboratoryLos Alamos 87545New MexicoUSA

Direct synthesis of layer-tunable and transfer-free graphene on technologically important substrates is highly valued for various electronics and device *** of the art in the field is currently a two-step process:a high-quality graphene layer synthesis on metal substrate through chemical vapor deposition(CVD)followed by delicate layer transfer onto device-relevant ***,we report a novel synthesis approach combining ion implantation for a precise graphene layer control and dual-metal smart Janus substrate for a diffusion-limiting graphene formation to directly synthesize large area,high quality,and layer-tunable graphene films on arbitrary substrates without the post-synthesis layer transfer ***(C)ion implantation was performed on Cu-Ni film deposited on a variety of device-relevant substrates.A well-controlled number of layers of graphene,primarily monolayer and bilayer,is precisely controlled by the equivalent fluence of the implanted C-atoms(1 monolayer~4×10^(15)C-atoms/cm^(2)).Upon thermal annealing to promote Cu-Ni alloying,the pre-implanted C-atoms in the Ni layer are pushed toward the Ni/substrate interface by the top Cu layer due to the poor C-solubility in *** a result,the expelled C-atoms precipitate into a graphene structure at the interface facilitated by the Cu-like alloy *** removing the alloyed Cu-like surface layer,the layer-tunable graphene on the desired substrate is directly *** layer-selectivity,high quality,and uniformity of the graphene films are not only confirmed with detailed characterizations using a suite of surface analysis techniques but more importantly are successfully demonstrated by the excellent properties and performance of several devices directly fabricated from these graphene *** dynamics(MD)simulations using the reactive force field(ReaxFF)were performed to elucidate the graphene formation mechanisms in this novel synthesis *** the wide use of ion

关键词： device applications dual-metal smart Janus substrate growth mechanism Ion implantation layer-tunable and transfer-free graphene

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Effect of lanthanum on inclusions in non-oriented electrical steel slabs

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Journal of Iron and Steel Research International 2024年第7期31卷 1680-1691页

作者： Qiang Ren Zhi-yuan Hu Yun-xia Liu Wei-cheng Zhang Zi-qi Gao Li-feng Zhang School of Mechanical Engineering Yanshan UniversityQinhuangdao 066004HebeiChina School of Metallurgical and Ecological Engineering University of Science and Technology BeijingBeijing 100083China Research and Development Department Shougang Zhixin Qian'an Electromagnetic Material Co.Ltd.Qian'an 064400HebeiChina School of Mechanical and Materials Engineering North China University of TechnologyBeijing 100144China

The effect of lanthanum on the characteristics of inclusions in the slab of non-oriented electrical steels was investigated through industrial trials and thermodynamic *** number,size,and chemical composition of inclusions in the surface,one-quarter of thickness and the center of slabs with and without lanthanum addition were statistically analyzed using an automatic inclusion analysis *** the lanthanum-free slab,inclusions were predominately ***_(2)O_(3),MgO,and AlN as well as a small number of Al_(2)O_(3)-MgO-CaO and *** number densities of oxide inclusions and AlN decreased from the surface to the center of the slab,which was ascribed to the difference in cooling intensity during the continuous *** the steel with lanthanum addition,inclusions were modified into LaAlO_(3) and La_(2)O_(2)S and gradually transformed into dual-phase MgO-La_(2)S3 with an increasing distance from the slab surface due to the reaction between the lanthanum-containing inclusion and the steel *** uneven distribution of oxide inclusions along the thickness of the slab was eliminated in the lanthanum-bearing slab because the dissolved oxygen was remarkably decreased by ***-bearing inclusions were more likely to agglomerate AlN by inducing the heterogeneous nucleation of AlN on their surface,while small-size ***_(2)O_(3) inclusions hardly showed a coarsening effect on the size of AlN.

关键词： Lanthanum-Inclusion Non-oriented electrical steel Aluminum nitride Heterogenous nucleation

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A gate-tunable artificial synapse based on vertically assembled van der Waals ferroelectric heterojunction

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Journal of materials science & Technology 2022年第33期128卷 239-244页

作者： Yaning Wang Wanying Li Yimeng Guo Xin Huang Zhaoping Luo Shuhao Wu Hai Wang Jiezhi Chen Xiuyan Li Xuepeng Zhan Hanwen Wang Shenyang National Laboratory for Materials Science Institute of Metal ResearchChinese Academy of SciencesShenyang 110016China School of Material Science and Engineering University of Science and Technology of ChinaShenyang 110016China Department of Applied Physics Aalto UniversityAaltoFinland School of Information Science and Engineering(ISE) Shandong UniversityQingdao 266237China

Memtransistor,a multi-terminal device that combines both the characteristics of a memristor and a transistor,has been intensively studied in two-dimensional layered materials(2 DLM),which show potential for applications in such as neuromorphic ***,while often based on the migration of ions or atomic defects in the conduction channels,performances of memtransistors suffer from the poor reliability and ***,those known 2 DLM-based memtransistors are mostly constructed in a lateral manner,which hinders the further increasing of the transistor densities per *** now,fabricating non-atomic-diffusion based memtransistors with vertical structure remains ***,we demonstrate a vertically-integrated ferroelectric memristor by hetero-integrating the 2 D ferroelectric materials CuInP_(2)S_(6)(CIPS)into a graphite/CuInP_(2)S_(6)/MoS_(2)vertical *** behaviour and multi-level resistance states were *** synaptic behaviours including excitatory postsynaptic current,paired-pulse-facilitation,and spike-amplitude-dependent plasticity are successfully ***,by applying a gate potential,the memristive behaviour and synaptic features can be effectively gate *** findings pave the way for the realization of novel gate-tunable ferroelectric synaptic devices with the capability to perform complex neural functions.

关键词： van der Waals heterostructures Ferroelectrics Memristor Artificial synapse Neuromorphic computing

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Mechanism of subsurface microstructural fatigue crack initiation during high and very-high cycle fatigue of advanced bainitic steels

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Journal of materials science & Technology 2022年第13期108卷 142-157页

作者： Guhui Gao Rong Liu Yusong Fan Guian Qian Xiaolu Gui R.D.K.Misra Bingzhe Bai Material Science&Engineering Research Center School of MechanicalElectronic and Control EngineeringBeijing Jiaotong UniversityBeijing 100044China State Key Laboratory of Nonlinear Mechanics(LNM) Institute of MechanicsChinese Academy of SciencesBeijing 100190China Laboratory for Excellence in Advanced Steel Research Department of MetallurgicalMaterials and Biomedical EngineeringUniversity of Texas at El Paso500W University AvenueEl PasoTX 79968USA Key Laboratory of Advanced Material School of Material Science and EngineeringTsinghua UniversityBeijing 100084China

Advanced bainitic steels with the multiphase structure of bainitic ferrite,retained austenite and martensite exhibit distinctive fatigue crack initiation behavior during high cycle fatigue/very high cycle fatigue(HCF/VHCF)*** subsurface microstructural fatigue crack initiation,referred to as“non-inclusion induced crack initiation,NIICI”,is a leading mode of failure of bainitic steels within the HCF/VHCF *** this regard,there is currently a missing gap in the knowledge with respect to the cyclic response of multiphase structure during VHCF failure and the underlying mechanisms of fatigue crack initiation during *** address this aspect,we have developed a novel approach that explicitly identifies the knowledge gap through an examination of subsurface crack initiation and interaction with the local *** was accomplished by uniquely combining electron microscopy,three-dimensional confocal microscopy,focused ion beam,and transmission Kikuchi ***,the study indicated that there are multiple micro-mechanisms responsible for the NIICI failure of bainitic steels,including two scenarios of transgranular-crack-assisted NIICI and two scenarios of intergranular-crack-assisted NIICI,which resulted in the different distribution of fine grains in the crack initiation *** fine grains were formed through fragmentation of bainitic ferrite lath caused by localized plastic deformation or via local continuous dynamic recrystallization because of repeated interaction between slip bands and prior austenite grain *** formation of fine grains assisted the advancement of small *** important aspect discussed is the role of retained austenite(RA)during cyclic loading,on crack initiation and propagation in terms of the morphology,distribution and stability of RA,which determined the development of localized cyclic plastic deformation in multiphase structure.

关键词： Microstructure Advanced bainitic steels Very high cycle fatigue Mechanism Retained austenite

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High Efficiency InGaN/GaN Nanowire LED Utilizing Exciton Recombination Dynamics

High Efficiency InGaN/GaN Nanowire LED Utilizing Exciton Rec...

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CLEO: science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

作者： Malhotra, Yakshita Pandey, Ayush Min, Jungwook Reddeppa, Maddaka Xiao, Yixin Li, Zidong Kan, Yuchen Guo, Yifu Wu, Yuanpeng Sun, Kai Deotare, Parag Mi, Zetian Department of Electrical Engineering and Computer Science University of Michigan 1301 Beal Avenue Ann ArborMI48109 United States Department of Material Science and Engineering University of Michigan 1301 Beal Avenue Ann ArborMI48109 United States

Facet formation in InGaN disc-in-wire LEDs leads to increased exciton binding energy due to strain relaxation and reduced polarization fields resulting in an ultra-high efficiency of 25.2% for green emission utilizing... 详细信息

关键词： Excitons

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Carrier Transfer From C-Plane to Semipolar-Plane Regions in a Red-Emitting InGaN/GaN Heterostructure

Carrier Transfer From C-Plane to Semipolar-Plane Regions in ...

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CLEO: science and Innovations in CLEO 2024, CLEO: S and I 2024 - Part of Conference on Lasers and Electro-Optics

作者： Malhotra, Yakshita Shen, Yifan Wu, Yuanpeng Hanish, Josey Guo, Yifu Xiao, Yixin Sun, Kai Norris, Theodore Mi, Zetian Department of Electrical Engineering and Computer Science University of Michigan 1301 Beal Avenue Ann ArborMI48109 United States Department of Material Science and Engineering University of Michigan 2300 Hayward Street Ann ArborMI48109 United States

Temperature and power dependent time-resolved photoluminescence measurements are performed on a novel ultra-stable red-emitting InGaN/GaN heterostructure. PL dynamics at two distinct wavelengths indicate a lateral car... 详细信息

关键词： Gallium nitride

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Towards Efficient Automatic Oracle Synthesis and Resource Estimation Using QDK and QIR 4

Towards Efficient Automatic Oracle Synthesis and Resource Es...

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4th IEEE International Conference on Quantum Computing and engineering, QCE 2023

作者： Chen, I-Tung Gupta, Chaman University of Washington Department of Electrical and Computer Engineering SeattleWA United States University of Washington Department of Material Science and Engineering SeattleWA United States

ISBN: (纸本)9798350343236

Automatic oracle synthesis (AOS) provides a promising route to speed up the process of constructing a complex quantum oracle. Here, we expand the existing AOS in the Microsoft Quantum Development Kit (QDK) by adding new functionalities and introducing a new workflow. We also optimize the AOS process by reducing the number of T gates using measurement-based uncomputation. Furthermore, we compare the resource requirements of the oracles generated using AOS to those of the existing QDK library oracles using the Azure Quantum Resource Estimator. The results suggest that the oracles generated using AOS perform better in runtime but use more qubits compared to the corresponding QDK library oracle. With the presented workflow, one can easily implement and estimate the quantum resources required for oracles with complex arithmetic functions. Finally, we present a strategy that can further reduce the number of physical qubits needed in AOS. © 2023 IEEE.

关键词： Number theory

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Visualization of cristae and mtDNA interactions via STED nanoscopy using a low saturation power probe

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Light(science & Applications) 2024年第9期13卷 1741-1756页

作者： Wei Ren Xichuan Ge Meiqi Li Jing Sun Shiyi Li Shu Gao Chunyan Shan Baoxiang Gao Peng Xi Department of Biomedical Engineering National Biomedical Imaging CenterCollege of Future TechnologyPeking UniversityBeijing 100871China Key Laboratory of Analytical Science and Technology of Hebei Province College of Chemistry and Material ScienceHebei UniversityBaoding 071002China School of Life Sciences Peking UniversityBeijing 100871China National Center for Protein Sciences Peking UniversityBeijing 100871China

Mitochondria are crucial organelles closely associated with cellular metabolism and *** DNA(mtDNA)encodes a variety of transcripts and proteins essential for cellular ***,the interaction between the inner membrane(IM)and mtDNA remains elusive due to the limitations in spatiotemporal resolution offered by conventional microscopy and the absence of suitable in vivo probes specifically targeting the ***,we have developed a novel fluorescence probe called HBmito Crimson,characterized by exceptional photostability,fluorogenicity within lipid membranes,and low saturation *** successfully achieved over 500 frames of lowpower stimulated emission depletion microscopy(STED)imaging to visualize the IM dynamics,with a spatial resolution of 40 *** utilizing dual-color imaging of the IM and mtDNA,it has been uncovered that mtDNA tends to habitat at mitochondrial tips or branch points,exhibiting an overall spatially uniform ***,the dynamics of mitochondria are intricately associated with the positioning of mtDNA,and fusion consistently occurs in close proximity to mtDNA to minimize pressure during cristae *** healthy cells,>66%of the mitochondria are Class III(i.e.,mitochondria>5μm or with>12 cristae),while it dropped to<18%in *** dynamics,orchestrated by cristae remodeling,foster the even distribution of ***,in conditions of apoptosis and ferroptosis where the cristae structure is compromised,mtDNA distribution becomes *** findings,achieved with unprecedented spatiotemporal resolution,reveal the intricate interplay between cristae and mtDNA and provide insights into the driving forces behind mtDNA distribution.

关键词： metabolism saturation utilizing

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