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Annual IEEE Symposium on Gallium Arsenide Integrated Circuit (GaAs IC)

作者： Y. Kwon D. Pavlidis P. Marsh G.I. Ng T. Brock Center for Space Terahertz Technology & Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

The design, fabrication, and experimental characteristics of a balanced InAlAs/InGaAs heterostructure diode mixer are presented. The mixer is monolithically integrated on InP substrates and shows a minimum conversion loss of 12.4 dB with a 91 GHz LO (local oscillator) drive of 12 dBm and an IF (intermediate frequency) of 2 GHz. A reasonably flat RF response has been found from 86.5 GHz to 95.5 GHz (10% bandwidth). The characteristics of the planar heterostructure diodes are studied, and the impact of their parameters on the mixer conversion loss is investigated. This diode design is the same as for high-electron-mobility transistors (HEMTs) and offers the possibility of easy monolithic integration with FET components as necessary for millimeter-wave modules.< >

关键词： Diodes Mixers HEMTs MODFETs Fabrication Indium compounds Indium gallium arsenide Indium phosphide Local oscillators Frequency conversion

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Introducing the through-line deembedding procedure

Introducing the through-line deembedding procedure

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Microwave, MTT-S International Symposium

作者： M.B. Steer S.B. Goldberg G. Rinne P.D. Franzon I. Turlik J.S. Kasten High Frequency Electronics Laboratory and the Picosecond Digital Systems Laboratory Department of Electrical and Computer Engineering North Carolina State University Raleigh NC USA Microelectronics Center of North Carolina NC USA

The through-line (TL) method is introduced to replace the through-reflect-line (TRL) deembedding procedure. TL utilizes measurements of two lengths of line following approximate open-short-line calibration. TL accounts for the frequency-dependent characteristic impedance of the line and avoids the periodic glitches inherent in the TRL procedure.< >

关键词： Calibration Impedance measurement Fixtures Reflection Testing Frequency Transmission line measurements Laboratories Capacitance measurement Digital systems

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THEORETICAL-ANALYSIS OF HEMT BREAKDOWN DEPENDENCE ON DEVICE DESIGN PARAMETERS

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IEEE TRANSACTIONS ON ELECTRON DEVICES 1991年第2期38卷 213-221页

作者： CHAU, HF PAVLIDIS, D TOMIZAWA, K Center of High-Frequency Microelectronics Solid-State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

A two-dimensional numerical analysis is presented to investigate the breakdown characteristics of single- and double-channel AlGaAs/GaAs HEMT's. The influence of the doped layer thickness as well as the thickness of an undoped i-layer under the gate is analyzed. Impact ionization is considered to be the dominant breakdown mechanism. All simulations revealed the existence of a high electric field region near the gate contact. Breakdown occurs in the gate-drain region and the (breakdown) path which maximizes the ionization integral is entirely in the AlGaAs layer. For increased donor layer thickness, single-channel devices biased near pinchoff have gate-drain breakdown voltages varying from 8 to 14 V with corresponding peak electric field values in the range of 8.2 x 10(5) to 2.4 x 10(6) V/cm. The breakdown voltage increases with increasing gate bias \V(gs)\ due to a screening effect of transverse from longitudinal electric field. Double-channel HEMT's have slightly higher breakdown than single-channel especially near pinchoff and for thin donor layers. The use of large A1 composition, i.e., material of small impact ionization coefficients improves breakdown. Surface depletion does not modify the breakdown considerably (DELTA-V(***) approximately 0.6 V).

关键词： HEMTs Electric breakdown Gallium arsenide Impact ionization MESFETs Voltage microelectronics Solid state circuits Laboratories Tunneling

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THE INFLUENCE OF GATE-FEEDER MESA-EDGE CONTACTING ON SIDEGATING EFFECTS IN IN0.52AL0.48AS/IN0.53GA0.47AS HETEROSTRUCTURE FET

IEEE ELECTRON DEVICE LETTERS

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IEEE ELECTRON DEVICE LETTERS 1991年第7期12卷 360-362页

作者： CHAN, YJ PAVLIDIS, D NG, GI Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

Sidegating effects in InAlAs/InGaAs heterostructure FET's (HFET's) are experimentally investigated. HFET's with the gate air bridge over the mesa edge can maintain 99% of the drain-source (I(ds)) current level at sidegate voltages (V(sg)) extending up to -30 V, while the non-air-bridge configuration of HFET's shows a 30% drop of I(ds) at the same V(sg). This significant discrepancy of sidegating effect is attributed to depletion region modulation at the mesa edge below the gate feeder. By lifting the gate feeder above the mesa step, sidegating is reduced, which suggests the channel/substrate trap effects are negligibly small.

关键词： HEMTs MODFETs Substrates Indium gallium arsenide Indium compounds Intrusion detection Fabrication Voltage Superlattices Buffer layers

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A 2-TEMPERATURE TECHNIQUE FOR PECVD DEPOSITION OF SILICON DIOXIDE

IEEE ELECTRON DEVICE LETTERS

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IEEE ELECTRON DEVICE LETTERS 1991年第5期12卷 236-237页

作者： HERMAN, JS TERRY, FL Center for High Frequency Microelectronics Solid State Electronics Laborator Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

A new technique has been developed and analyzed for plasma-enhanced chemical vapor deposition (PECVD) silicon dioxide films which yields lower interface trap densities. First, a thin cap layer is deposited at a low temperature and the film is subjected to an in-situ hydrogen plasma treatment. Then the temperature is raised to the final value and the deposition continued to the desired thickness.

关键词： Silicon compounds Plasma temperature Plasma chemistry Plasma density Plasma measurements Hydrogen Chemical vapor deposition Semiconductor films Dielectrics Plasma simulation

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A MODIFIED HARMONIC-OSCILLATOR APPROXIMATION SCHEME FOR THE DIELECTRIC-CONSTANTS OF ALXGA1-XAS

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JOURNAL OF APPLIED PHYSICS 1991年第1期70卷 409-417页

作者： TERRY, FL Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor Michigan 48109‐2122

The dielectric functions of Al(x)Ga1-xAs have recently been measured for several Al mole fractions over the 1.5-6.0 eV wavelength range [D.E. Aspnes, S. M. Kelso, R. A. Logan, and R. Bhat, J. Appl. Phys 60, 754 (1986)]. To make use of this data to perform optical modeling for spectroscopic ellipsometry analysis of Al(x)Ga1-xAs-containing samples, and for other optical modeling purposes, a resonable interpolation scheme is required to estimate the dielectric functions of intermediate compounds. In this work, we will present a modified version of the harmonic oscillator approximation (HOA) of Erman et al. [M. Erman, J. B. Theeten, P. Chambon, S. M. Kelso, and D. E. Aspnes, J. Appl. Phys. 56, 2664 (1984)] to model the experimental data and interpolate between the known compositions over the 1.5-5.0 eV range. Our model uses additional harmonic oscillators and allows each oscillator to have an independent phase. These modifications significantly improve the accuracy of the approximation for photon energies at and below the fundamental band-gap energy. This allows much more accurate modeling of reflection problems for multilayer GaAs/AlGaAs structures. We will present test of this approach with simulations of spectroscopic ellipsometry data using known data, and with measured spectroscopic ellipsometer data on Al(x)Ga1-xAs-containing samples grown by molecular-beam epitaxy and organometallic chemical vapor deposition.

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DIODE MULTIPLIERS FOR SUBMILLIMETER-WAVE INALAS/INGAAS HETEROSTRUCTURE MONOLITHIC INTEGRATED-CIRCUITS

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MICROWAVE AND OPTICAL TECHNOLOGY LETTERS 1991年第1期4卷 38-43页

作者： KWON, Y PAVLIDIS, D Center for Space Terahertz Technology and Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science The University of Michigan Ann Arbor Michigan 48109-2122

InAlAs/InGaAs heterostructures are studied as multiplier elements for submillimeter-wave monolithic integrated circuits. The designs considered for this purpose are based on the principle of conventional HEMT, HEMT with n+ bottom layer and a new proposed scheme of quantum-confined modulated charge (QCMC). The QCMC diode is analyzed theoretically and experimentally showing its potential operation capability at 1.5 THz.

关键词： DIODE MULTIPLIER SUBMILLIMETER-WAVE MONOLITHIC INTEGRATED CIRCUIT INALAS/INGAAS HETEROSTRUCTURE HEMT DIODE

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InAlAs/In/sub x/Ga/sub 1-x/As HIGFETs (x>or=0.53) for E/D FET logic applications

InAlAs/In/sub x/Ga/sub 1-x/As HIGFETs (x>or=0.53) for E/D FE...

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Indium Phosphide and Related Materials Conference

作者： Y.-J. Chan D. Pavlidis Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

The design of InAlAs/In/sub x/Ga/sub 1-x/As (x>or=0.53) heterostructure insulated-gate FETs with lattice-matched and strained channel designs are investigated. It is shown that DC (g/sub m/,K) and microwave (f/sub T/, f/sub max/) characteristics were enhanced as the In content was increased to 65% in the InGaAs channel: best performance was mu =12890 cm/sup 2//V-s, gm=438 mS/mm, f/sub T/=27 GHz. Orientation effects indicate a V/sub th/ shift up to -0.128 V and a very small g/sub m/ variation. Enhancement- and depletion-mode HIGFET operation was controlled by an additional selective ion implantation in the channel.< >

关键词： Indium compounds FETs Logic Temperature Transconductance Annealing Indium phosphide Buffer layers Strain control Indium gallium arsenide

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Large Signal Analysis and Experimental Characteristics of Monolithic InP-Based W-Band HEMT Oscillators

Large Signal Analysis and Experimental Characteristics of Mo...

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European Conference on Microwave

作者： Youngwoo Kwon Dimitris Pavlidis Center for Space Terahertz Technology & Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor MI USA

A large signal analysis method for simulating HEMT oscillators has been developed and applied to the design of a monolithic W-band HEMT oscillator. The analysis method uses measured small-signal S-parameters and employs a two-dimensional cubic spline interpolation routine and a harmonic balance technique to perform an accurate device modeling. The monolithic oscillators were fabricated using InAlAs/InGaAs heterostructures on InP substrate. A power level of 1.2 mW at 76.8 GHz was obtained using InAlAs/InGaAs heterostructures on InP substrate out of chips with 0.1 μm × 36 μm HEMT's. Comparisons between theoretical and experimental characteristics are also reported.

关键词： Signal analysis HEMTs Oscillators Indium compounds Indium gallium arsenide Indium phosphide Analytical models Signal design Harmonic analysis Performance analysis

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NEW GENERATION MMIC AMPLIFIER USING INGAAS/INALAS HEMTS

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electronics LETTERS 1990年第4期26卷 264-266页

作者： WEISS, M NG, GI PAVLIDIS, D Center for High Frequency Microelectronics Solid State Electronics Laboratory Department of Electrical Engineering and Computer Science University of Michigan Ann Arbor USA

An InP based monolithic integrated technology has been developed using InGaAs/InAlAs HEMTs and is applied for the first time to the realisation of a two-stage amplifier. The gain has a peak of 18.4dB at 6.4GHz and exc... 详细信息

关键词： InP based monolithic integrated technology aluminium compounds MMIC III-V semiconductors indium compounds 15 dB 6.0 to 9.5 GHz gallium arsenide Other field effect integrated circuits InGaAs-InAlAs new generation MMIC amplifier Solid-state microwave circuits and devices microwave amplifiers 18.4 dB Amplifiers 6.4 GHz field effect integrated circuits two-stage amplifier HEMTs

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