咨询与建议

限定检索结果

文献类型

  • 163 篇 会议
  • 78 篇 期刊文献

馆藏范围

  • 241 篇 电子文献
  • 0 种 纸本馆藏

日期分布

学科分类号

  • 170 篇 工学
    • 150 篇 电子科学与技术(可...
    • 95 篇 材料科学与工程(可...
    • 55 篇 化学工程与技术
    • 40 篇 电气工程
    • 20 篇 信息与通信工程
    • 14 篇 计算机科学与技术...
    • 12 篇 光学工程
    • 10 篇 仪器科学与技术
    • 9 篇 冶金工程
    • 8 篇 动力工程及工程热...
    • 7 篇 软件工程
    • 3 篇 机械工程
    • 3 篇 网络空间安全
    • 2 篇 控制科学与工程
    • 2 篇 轻工技术与工程
    • 1 篇 生物医学工程(可授...
    • 1 篇 生物工程
  • 79 篇 理学
    • 56 篇 化学
    • 47 篇 物理学
    • 7 篇 数学
    • 5 篇 地质学
    • 1 篇 生物学
    • 1 篇 统计学(可授理学、...
  • 3 篇 管理学
    • 3 篇 管理科学与工程(可...

主题

  • 26 篇 gallium nitride
  • 14 篇 hemts
  • 13 篇 power amplifiers
  • 13 篇 silicon carbide
  • 12 篇 indium phosphide
  • 10 篇 modfets
  • 9 篇 silicon
  • 8 篇 logic gates
  • 8 篇 gallium arsenide
  • 7 篇 inp
  • 7 篇 performance eval...
  • 7 篇 schottky diodes
  • 7 篇 heterojunction b...
  • 6 篇 substrates
  • 6 篇 mmics
  • 6 篇 power generation
  • 6 篇 integrated circu...
  • 6 篇 radio frequency
  • 5 篇 fabrication
  • 5 篇 phemts

机构

  • 78 篇 science and tech...
  • 45 篇 science and tech...
  • 33 篇 nanjing electron...
  • 14 篇 national key lab...
  • 11 篇 nanjing guobo el...
  • 9 篇 state key labora...
  • 9 篇 college of integ...
  • 8 篇 national key lab...
  • 6 篇 science and tech...
  • 6 篇 science and tech...
  • 5 篇 fundamental scie...
  • 5 篇 nanjing electron...
  • 5 篇 department of mi...
  • 4 篇 fundamental scie...
  • 4 篇 national and loc...
  • 4 篇 school of microe...
  • 4 篇 science and tech...
  • 4 篇 national key lab...
  • 4 篇 school of optoel...
  • 4 篇 national key lab...

作者

  • 33 篇 tangsheng chen
  • 23 篇 wei cheng
  • 20 篇 chen chen
  • 19 篇 yuechan kong
  • 17 篇 haiyan lu
  • 15 篇 chen tangsheng
  • 15 篇 jianjun zhou
  • 11 篇 chen gang
  • 11 篇 bai song
  • 11 篇 bin niu
  • 10 篇 zhou jianjun
  • 8 篇 zhonghui li
  • 8 篇 li liang
  • 8 篇 li yun
  • 8 篇 kai zhang
  • 8 篇 cheng wei
  • 8 篇 ruimin xu
  • 8 篇 yi zhang
  • 8 篇 yuan wang
  • 8 篇 weibo wang

语言

  • 223 篇 英文
  • 14 篇 中文
  • 4 篇 其他
检索条件"机构=National Key Laboratory of Science and Technology on Monolithic Integrated Circuits and Modules"
241 条 记 录,以下是61-70 订阅
排序:
Effects of annealing parameters on epitaxial graphene on SiC substrates
Effects of annealing parameters on epitaxial graphene on SiC...
收藏 引用
Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018
作者: Wang, Yi Li, Yun Zhao, Zhifei Zhou, Ping Yin, Zhijun Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China
The effects of annealing on epitaxial graphene on SiC substrates with various conditions are investigated. Results show that high pressure hydrogen atmosphere is more effective to decouple the epitaxial graphene from ... 详细信息
来源: 评论
Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings
收藏 引用
Chinese Physics B 2019年 第10期28卷 198-203页
作者: Chao Wu Yingwen Liu Xiaowen Gu Shichuan Xue Xinxin Yu Yuechan Kong Xiaogang Qiang Junjie Wu Zhihong Zhu Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China
By designing and fabricating a series of dual-interferometer coupled silicon microrings, the coupling condition of the pump, signal, and idler beams can be engineered independently and then we carried out both the con... 详细信息
来源: 评论
Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance
收藏 引用
Chinese Physics B 2019年 第6期28卷 105-109页
作者: Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and Structures Harbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China
Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to dire... 详细信息
来源: 评论
Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps
Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\m...
收藏 引用
IEEE Electron Devices technology and Manufacturing Conference (EDTM)
作者: LiShu Wu JiaYun Dai Cheng Wei YueChan Kong TangShen Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and Engineering Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China
In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS ... 详细信息
来源: 评论
11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF $C_{\mathrm{j}0}$
11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...
收藏 引用
UK, Europe, China Millimeter Waves and THz technology Workshop (UCMMT)
作者: Bin Niu Daoyu Fan Gang Lin Kunpeng Dai Hai-Yan Lu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute and Nanjing Chip Valley Industrial Technology Institute Nanjing China
GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs ter... 详细信息
来源: 评论
Quantum Light Generation based on GaN Microring towards Fully On-chip Source
arXiv
收藏 引用
arXiv 2024年
作者: Zeng, Hong He, Zhao-Qin Fan, Yun-Ru Luo, Yue Lyu, Chen Wu, Jin-Peng Li, Yun-Bo Liu, Sheng Wang, Dong Zhang, De-Chao Zeng, Juan-Juan Deng, Guang-Wei Wang, You Song, Hai-Zhi Wang, Zhen You, Li-Xing Guo, Kai Sun, Chang-Zheng Luo, Yi Guo, Guang-Can Zhou, Qiang Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu611731 China Key Laboratory of Quantum Physics and Photonic Quantum Information Ministry of Education University of Electronic Science and Technology of China Chengdu611731 China Department of Electronic Engineering Tsinghua University Beijing100084 China Department of Fundamental Network Technology China Mobile Research Institute Beijing100053 China Center for Quantum Internet Tianfu Jiangxi Laboratory Chengdu641419 China Southwest Institute of Technical Physics Chengdu610041 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Institute of Systems Engineering AMS Beijing100141 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei230026 China
integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip int... 详细信息
来源: 评论
Compact L-band High Performance Self-bias GaN Power Amplifier
Compact L-band High Performance Self-bias GaN Power Amplifie...
收藏 引用
International Conference on Information science and Control Engineering (ICISCE)
作者: Shuai Wang Shichang Zhong Liang Zhao Fei Li National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute P.O.Box 1601 Nanjing P.R.China
This paper presents a compact high performance L-band GaN power amplifier. It uses a 3.6 mm gate width die for input and output matching. The circuit uses self-bias technology to realize single power supply. Finally, ... 详细信息
来源: 评论
Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells
收藏 引用
Chinese Physics Letters 2019年 第7期36卷 82-85页
作者: Xiao-di Xue Yu Liu Lai-pan Zhu Wei Huang Yang Zhang Xiao-lin Zeng Jing Wu Bo Xu Zhan-guo Wang Yong-hai Chen Wei-feng Zhang Henan Key Laboratory of Photovoltaic Materials Henan University Kaifeng 475004 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016
The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocur... 详细信息
来源: 评论
Analysis on the Effect of Laval Microchannel Structure in Si Interposer for GaN HEMTs Cooling
Analysis on the Effect of Laval Microchannel Structure in Si...
收藏 引用
International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
The microfluid cooling is widely used in the thermal management for high power integration in 3D Si RF microsystem. The simple and efficient microfluid structure is essential in large area cooling for the module with ... 详细信息
来源: 评论
Numerical Study on Microjet Cooling Structure for GaN HEMTs Integration on Silicon
Numerical Study on Microjet Cooling Structure for GaN HEMTs ...
收藏 引用
International Conference on (ICEPT) Electronic Packaging technology
作者: Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China
An analysis on the heat transfer feature of the microfluid cooling based on the microjet structure in the Si interposer for GaN HEMTs was investigated to meet the requirement of thermal management in RF microsystem in... 详细信息
来源: 评论