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Asia-Pacific Conference on Silicon Carbide and Related Materials, APCSCRM 2018

作者： Wang, Yi Li, Yun Zhao, Zhifei Zhou, Ping Yin, Zhijun Li, Zhonghui Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing210016 China

ISBN: (纸本)9783035713855

The effects of annealing on epitaxial graphene on SiC substrates with various conditions are investigated. Results show that high pressure hydrogen atmosphere is more effective to decouple the epitaxial graphene from SiC substrate than that of a relative lower pressure process. Besides, the characteristic 2D-peak of graphene in Raman spectra disappeared with an annealing temperature 1000 °C, which means that the epitaxial graphene layer was decomposed in this condition. The study also shows that the decomposition of graphene can be effectively suppressed by increasing carbon vapor partial pressure through introducing ethylene during high pressure hydrogen annealing at 1000 °C. And the epitaxial graphene is successfully transferred to quasi free standing graphene by the annealing with an appropriate flow of ethylene. © 2019 Trans Tech Publications Ltd, Switzerland.

关键词： Ethylene

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Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings

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Chinese Physics B 2019年第10期28卷 198-203页

作者： Chao Wu Yingwen Liu Xiaowen Gu Shichuan Xue Xinxin Yu Yuechan Kong Xiaogang Qiang Junjie Wu Zhihong Zhu Ping Xu Institute for Quantum Information and State Key Laboratory of High Performance Computing College of ComputerCollege of Advanced Interdisciplinary StudiesNational University of Defense TechnologyChangsha 410073China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China National Laboratory of Solid State Microstructures and School of Physics Nanjing UniversityNanjing 210093China

By designing and fabricating a series of dual-interferometer coupled silicon microrings, the coupling condition of the pump, signal, and idler beams can be engineered independently and then we carried out both the continuous-wave and pulse pumped four-wave mixing experiments to verify the dependence of conversion efficiency on the coupling conditions of the four interacting beams, respectively. Under the continuous-wave pump, the four-wave mixing efficiency gets maximized when both the pump and signal/idler beams are closely operated at the critical coupling point, while for the pulse pump case, the efficiency can be enhanced greatly when the pump and converted idler beams are all overcoupled. These experiment results agree well with our theoretical calculations. Our design provides a platform for explicitly characterizing the four-wave mixing under different pumping conditions, and offers a method to optimize the four-wave mixing, which will facilitate the development of on-chip all-optical signal processing with a higher efficiency or reduced pump power.

关键词： silicon resonators four-wave mixing Mach-Zehnder interferometer

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Thermal characterization of GaN heteroepitaxies using ultraviolet transient thermoreflectance

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Chinese Physics B 2019年第6期28卷 105-109页

作者： Kang Liu Jiwen Zhao Huarui Sun Huaixin Guo Bing Dai Jiaqi Zhu 1Ministry of Industry and Information Technology Key Laboratory of Micro-Nano Optoelectronic Information System Harbin Institute of TechnologyShenzhen 518055China Center for Composite Materials and Structures Harbin Institute of TechnologyHarbin 150080China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices InstituteNanjing 210016China

Thermal transport properties of GaN heteroepitaxial structures are of critical importance for the thermal management of high-power GaN electronic and optoelectronic devices. Ultraviolet(UV) lasers are employed to directly heat and sense the GaN epilayers in the transient thermoreflectance(TTR) measurement, obtaining important thermal transport properties in different GaN heterostructures, which include a diamond thin film heat spreader grown on GaN. The UV TTR technique enables rapid and non-contact thermal characterization for GaN wafers.

关键词： GaN heteroepitaxy thermal conductivity transient thermoreflectance ultraviolet laser

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Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\mathrm{m}$ Pitch Au-In Microbumps

Heterogenous Integration of InP DHBT and Si CMOS by $30\mu\m...

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IEEE Electron Devices technology and Manufacturing Conference (EDTM)

作者： LiShu Wu JiaYun Dai Cheng Wei YueChan Kong TangShen Chen Tong Zhang Joint International Research Laboratory of Information Display and Visualization School of Electronic Science and Engineering Southeast University Nanjing P. R. China Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing P. R. China

In this work, we demonstrate heterogeneous integration of InP DHBT and Si CMOS on the same Silicon substrate based on 30μm Au-In microbump bonding technology, InP DHBTs are vertical stacked at the top of the Si CMOS wafer. Meanwhile, we exhibit a InP-on-Si CMOS 14Gbps 1:16 demultiplexer as example, which shows the potential to integrate InP and Si CMOS on the same chip to take advance of the two different material systems.

关键词： DH-HEMTs CMOS technology Silicon Manufacturing III-V semiconductor materials Bonding Indium phosphide

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11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF $C_{\mathrm{j}0}$

11THz GaAs Terahertz Schottky Barrier Diode with Sub 0.5 fF ...

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UK, Europe, China Millimeter Waves and THz technology Workshop (UCMMT)

作者： Bin Niu Daoyu Fan Gang Lin Kunpeng Dai Hai-Yan Lu Tangsheng Chen Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute and Nanjing Chip Valley Industrial Technology Institute Nanjing China

ISBN: (数字)9781728190648

ISBN: (纸本)9781728190655

GaAs terahertz schottky barrier diode SBD has been a major technology in terahertz wave multiplexing, mixing and direct detection for decades, due to its high mobility and low capacity. In this paper, T-anode GaAs terahertz SBD was presented with its C j0 scaled into sub-fF range. Scalling C-V measurement showed C j0 without parasitic capacity reached 0.476fF for the 0.5μm anode diameter device. With the relative low series resistance R s of 28.8Ω, cutoff frequency f t reached 11.6THz. The whole process was based on 4 inch GaAs wafer, guarantee stability and conformity in terahertz GaAs SBD integrated circuits working over 1THz.

关键词： Anodes Gallium arsenide Schottky diodes Metals Shape Resistance Probes

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Quantum Light Generation based on GaN Microring towards Fully On-chip Source

arXiv

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arXiv 2024年

作者： Zeng, Hong He, Zhao-Qin Fan, Yun-Ru Luo, Yue Lyu, Chen Wu, Jin-Peng Li, Yun-Bo Liu, Sheng Wang, Dong Zhang, De-Chao Zeng, Juan-Juan Deng, Guang-Wei Wang, You Song, Hai-Zhi Wang, Zhen You, Li-Xing Guo, Kai Sun, Chang-Zheng Luo, Yi Guo, Guang-Can Zhou, Qiang Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of China Chengdu611731 China Key Laboratory of Quantum Physics and Photonic Quantum Information Ministry of Education University of Electronic Science and Technology of China Chengdu611731 China Department of Electronic Engineering Tsinghua University Beijing100084 China Department of Fundamental Network Technology China Mobile Research Institute Beijing100053 China Center for Quantum Internet Tianfu Jiangxi Laboratory Chengdu641419 China Southwest Institute of Technical Physics Chengdu610041 China National Key Laboratory of Materials for Integrated Circuits Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences Shanghai200050 China Institute of Systems Engineering AMS Beijing100141 China CAS Key Laboratory of Quantum Information University of Science and Technology of China Hefei230026 China

integrated quantum light source is increasingly desirable in large-scale quantum information processing. Despite recent remarkable advances, new material platform is constantly being explored for the fully on-chip integration of quantum light generation, active and passive manipulation, and detection. Here, for the first time, we demonstrate a gallium nitride (GaN) microring based quantum light generation in the telecom C-band, which has potential towards the monolithic integration of quantum light source. In our demonstration, the GaN microring has a free spectral range of 330 GHz and a near-zero anomalous dispersion region of over 100 nm. The generation of energy-time entangled photon pair is demonstrated with a typical raw two-photon interference visibility of 95.5±6.5%, which is further configured to generate heralded single photon with a typical heralded second-order auto-correlation g(2)H (0) of 0.045±0.001. Our results pave the way for developing chip-scale quantum photonic circuit. Copyright © 2024, The Authors. All rights reserved.

关键词： Gallium nitride

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Compact L-band High Performance Self-bias GaN Power Amplifier

Compact L-band High Performance Self-bias GaN Power Amplifie...

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International Conference on Information science and Control Engineering (ICISCE)

作者： Shuai Wang Shichang Zhong Liang Zhao Fei Li National Key Laboratory of Monolithic Integrated Circuits and Modules Nanjing Electronic Devices Institute P.O.Box 1601 Nanjing P.R.China

This paper presents a compact high performance L-band GaN power amplifier. It uses a 3.6 mm gate width die for input and output matching. The circuit uses self-bias technology to realize single power supply. Finally, under the condition of 32V single power supply bias, 300 $\mu$s pulse width and 15% duty cycle, the output power of the amplifier is more than 20W, the gain is more than 15dB and the power additional efficiency(PAE) is more than 58% in the frequency band of 1.2 $\sim$ 1.4 GHz. The whole circuit is soldered in a 17.4mm $\times 24$ mm metal and ceramic package, which fully demonstrates the excellent performance of the self-bias L-band GaN power amplifier.

关键词： Information science Power supplies Power amplifiers Metals Logic gates Ceramics Usability

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Spin Transport under In-plane Electric Fields with Different Orientations in Undoped InGaAs/AlGaAs Multiple Quantum Wells

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Chinese Physics Letters 2019年第7期36卷 82-85页

作者： Xiao-di Xue Yu Liu Lai-pan Zhu Wei Huang Yang Zhang Xiao-lin Zeng Jing Wu Bo Xu Zhan-guo Wang Yong-hai Chen Wei-feng Zhang Henan Key Laboratory of Photovoltaic Materials Henan University Kaifeng 475004 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices Beijing 100083 Center of Materials Science and Optoelectronics Engineering University of Chinese Academy of Sciences Beijing 100049 Beijing Institute of Nanoenergy and Nanosystems Chinese Academy of Sciences Beijing 100083 Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing Electronic Devices Institute Nanjing 210016

The spin-polarized photocurrent is used to study the in-plane electric field dependent spin transport in undoped InGaAs/AlGaAs multiple quantum wells. In the temperature range of 77–297 K, the spin-polarized photocurrent shows an anisotropic spin transport under different oriented in-plane electric fields. We ascribe this characteristic to two dominant mechanisms: the hot phonon effect and the Rashba spin-orbit effect which is influenced by the in-plane electric fields with different orientations. The formulas are proposed to fit our experiments, suggesting a guide of potential applications and devices.

关键词： The spin-polarized photocurrent dependent spin transport applications and devices

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Analysis on the Effect of Laval Microchannel Structure in Si Interposer for GaN HEMTs Cooling

Analysis on the Effect of Laval Microchannel Structure in Si...

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International Conference on (ICEPT) Electronic Packaging technology

作者： Miao Yu Jian Zhu Min Huang Hongze Zhang School of Electronic Science and Engineering Nanjing Electronic Devices Institute Nanjing University Nanjing China School of Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing University Nanjing China Electronic Science and Engineering Nanjing Electronic Devices Institute Science and Technology on Monolithic Integrated Circuits and Modules Laboratory Nanjing China Nanjing Electronic Devices Institute Nanjing China

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

The microfluid cooling is widely used in the thermal management for high power integration in 3D Si RF microsystem. The simple and efficient microfluid structure is essential in large area cooling for the module with multiple active devices integrated on silicon. A novel Laval microchannel structure was proposed in this paper, and it was simple to design and easy for process. The thermal and hydraulic characteristics of Laval microchannel were investigated and compared with the conventional straight microchannel and 2 kinds of common serpentine microchannels using FEM analysis. The results indicated that Laval microchannel had low flow resistance to maintain high pumping power and achieved the best cooling performance among different microchannel structures. And Laval structure can be effective to keep junction temperature below 150 °C which can provide the sufficient condition for GaN HEMTs device operating with high efficiency and good linearity. It presented remarkable cooling performance for GaN HEMTs cooling integrated on Si, showing excellent candidate structure for large area cooling in 3D Si RF microsystem.

关键词： Microchannels Gallium nitride Silicon HEMTs MODFETs Cooling Junctions

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Numerical Study on Microjet Cooling Structure for GaN HEMTs Integration on Silicon

Numerical Study on Microjet Cooling Structure for GaN HEMTs ...

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International Conference on (ICEPT) Electronic Packaging technology

ISBN: (数字)9781728168265

ISBN: (纸本)9781728168272

An analysis on the heat transfer feature of the microfluid cooling based on the microjet structure in the Si interposer for GaN HEMTs was investigated to meet the requirement of thermal management in RF microsystem integration. The microjet cooling structure in the Si interposer consists of 2 layers of microfluids forming the microjets in the bottom layer and separating in the top layer from 2 directions. The GaN HEMTs device is bonded on the Si interposer with the transistor gates above the microjets to utilize the high local heat transfer coefficient effectively. The distributions of temperature and the maximum pressure variations in the cooling structure with different size parameters at different flow rates were investigated using FEM analysis, and the optimum relations of dominant parameters were proposed to achieve excellent cooling performance in this paper. Therefore, a simplified function can be established to evaluate the heat transfer coefficient with the optimized size parameters. The model of a 48 W/mm 2 power density GaN HEMTs device integrated on the Si interposer with optimized microjet cooling structure was simulated. The result indicated that the thermal resistance of the integrated system is 0.96 K/W which is equal to the thermal resistance of the device bonded on a 3 mm thick copper plate directly. The study on the property of the microfluid cooling in Si interposer provided a useful support for RF microsystem heterogeneous integration for GaN high power device on silicon.

关键词： Cooling Gallium nitride HEMTs MODFETs Heat transfer Microchannels Silicon

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