A glaucoma drainage device for the regulation of intraocular pressure is presented. The device consists of three biocompatible polymer layers: the cover (top layer), the diaphragm (intermediate layer), and the basepla...
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ISBN:
(纸本)9789898425379
A glaucoma drainage device for the regulation of intraocular pressure is presented. The device consists of three biocompatible polymer layers: the cover (top layer), the diaphragm (intermediate layer), and the baseplate with a cannular (bottom layer). Finite element analyses (FEA) were performed to find optimal design parameters for the targeted cracking pressure: the diameter of orifice, the thickness of intermediate layer, the width of the channel, and the overlapped length of the orifice over valve seat. Top and bottom layers were made by polydimethylsiloxane (PDMS) replica molding process, and an intermediate thin layer with through-holes was fabricated by PDMS fill-in molding method and hydrophobic treatment. The overlapped area of the bottom layer was coated with Cr and Au by using PDMS as a shadow mask. Metal layers are not to be bonded between the bottom and the intermediate layers so that the device showed the enhanced reliability in operation and the higher yield in production. Oxygen plasma treatment was performed for irreversible bonds between separate three PDMS layers. The experimental cracking pressure of the fabricated valve was 2.50 kPa, which is very close to the target value (2.67 kPa). The experiments showed that the proposed polymer check valve can regulate the pressure of the aqueous humour, fluid in an anterior chamber, within the normal intraocular pressure range (15-20mmHg) with a high repeatability.
We demonstrate broadband antireflective glasses with subwavelength structures (SWSs) using randomly distributed Ag nanoparticles. Ag nanoparticles formed by a thermal dewetting process were used as an etch mask for dr...
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作者:
Seong Yoon LimJunhyoung AhnJoon Seok LeeMin-Gon KimChan Beum ParkDepartment of Materials Science and Engineering
Korea Advanced Institute of Science and Technology (KAIST) 335 Science Road Daejeon 305-701 Korea Biomonitoring Research Center
Korea Research Institute of Bioscience and Biotechnology (KRIBB) 125 Science Road Daejeon 305-806 Korea Advanced Photonics Research Institute
Graduate Program of Photonics and Applied Physics Gwangju Institute of Science and Technology Gwangju 500-712 Korea Chan Beum Park
Department of Materials Science and Engineering Korea Advanced Institute of Science and Technology (KAIST) 335 Science Road Daejeon 305-701 Korea. Min-Gon Kim
Advanced Photonics Research Institute Graduate Program of Photonics and Applied Physics Gwangju Institute of Science and Technology Gwangju 500-712 Korea
We demonstrate the highly reflective broadband a-Si distributed Bragg reflector fabricated by oblique angle deposition. By tuning the refractive index of a-Si film, the high index contrast material system was achieved...
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We demonstrate the highly reflective broadband a-Si distributed Bragg reflector fabricated by oblique angle deposition. By tuning the refractive index of a-Si film, the high index contrast material system was achieved. The broadband reflective characteristics of a-Si distributed Bragg reflector were investigated by calculation and fabrication. The broad stop band (Δλ/λ=33.7%, R>99%) with only a five-pair a-Si distributed Bragg reflector was achieved experimentally at center wavelength of 650, 980, and 1550 nm. The size-, feature- and substrate-independent method for highly reflective Bragg reflectors was realized by simple oblique angle evaporation.
Subwavelength structures (SWSs) on distributed Bragg reflector(DBR) is investigated to achieve broadband and high reflection. By proper optimization of each parameter, very high reflectivity can be obtained in broad s...
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We report the enhanced interface properties between passivation layers and InSb by using remote PECVD system. SiO2 and Si3N4 layers deposited by remote PECVD showed lower interface trap densities than layers deposited...
We report the enhanced interface properties between passivation layers and InSb by using remote PECVD system. SiO2 and Si3N4 layers deposited by remote PECVD showed lower interface trap densities than layers deposited by normal PECVD. SiO2 layers deposited by remote PECVD showed 7.1×1011 cm−2 eV−1 of interface trap density at midgap which is slightly lower than SiO2 layers deposited by PECVD. Si3N4 layers deposited by remote PECVD showed 1.6∼1.7×1012 cm−2 eV−1 at midgap which is 3 times lower than Si3N4 layers deposited by PECVD. Interface properties of SiO2 are superior to that of Si3N4 in both case of PECVD and remote PECVD. To investigate the interface properties between SiO2 and InSb, X‐ray photoelectron spectroscopy was conducted. Indium and antimony oxide phases were found at the interface and these oxide phases could act as the origin of interface traps.
Cells offer natural examples of highly efficient networks of nanomachines. Accordingly, both intracellular and intercellular communication mechanisms in nature are looked to as a source of inspiration and instruction ...
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Zirconia and silica-based composite are introduced as an alternative to post-core systems due to their high elastic modulus. The cast metal post-core systems in the application of dental material can cause stress conc...
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A divacancy (DV) is one of the most abundant and most important defects in irradiated graphene, which modifies electronic and chemical properties of graphene. In this paper, we present ab initio calculations to study ...
A divacancy (DV) is one of the most abundant and most important defects in irradiated graphene, which modifies electronic and chemical properties of graphene. In this paper, we present ab initio calculations to study the dynamics and stability of DVs in graphene. Divacancies in graphene have various reconstructed structures, such as triple pentagon-triple heptagon (555-777) and pentagon-octagon-pentagon (5-8-5) patterns. A direct observation of the structural transformations between these reconstructions was recorded in transmission electron microscope images reported by Girit et al. in science 323, 1705 (2009). We clarify the atomic structures of DVs observed in the experiment and investigate the atomic processes and energetics for the observed dynamical motions in great detail. It is found that a series of Stone–Wales-type transformations are responsible for the migration and structural transformations of DVs and that a pentagon-heptagon-heptagon-pentagon (5-7-7-5) defect appearing as an intermediate structure during the dynamical process plays an important role in the transformations of DVs.
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