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Mechanical properties of rubber composites with stacked-cup carbon nanotubes

Carbon 2010年第2期48卷 571-571页

作者： Mikiko Hashimoto Tetsuya Isshiki Masanori Tomita Takashi Yanagisawa Kazuo Kaneda Hidetaka Takahashi Fujio Okino Faculty of Textile Science and Technology Shinshu University 3-15-1 Tokida Ueda 386-8567 Japan GSI Creos Corporation Nano Bio Development Center (NBDC) 1-12 Minami-Watarida Kawasaki-ku Kawasaki 210-0855 Japan Fujikura Rubber Ltd. R&D Division 1-840 Mihashi Omiya-ku Saitama 330-0856 Japan

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Statistical and scaling behavior of structural relaxation effects in phase-change memory (PCM) devices

Statistical and scaling behavior of structural relaxation ef...

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Annual International Symposium on reliability Physics

作者： Mattia Boniardi daniele Ielmini Simone Lavizzari Andrea L. Lacaita Andrea redaelli Agostino Pirovano Dipartimento di Elettronica e Informazione Politecnico di Milano and IUNET Milan Italy R&D-Technology Development Numonyx Milan Italy

The phase-change memory (PCM) technology represents one of the most attractive concepts for next generation data storage. PCM behavior is mainly limited by the structural relaxation (Sr) and by the crystallization of an amorphous chalcogenide material: the ternary alloy Ge 2 Sb 2 Te 5 . Sr is a local structural-rearrangement at the atomic/bonding scale and crystallization is the reaching of a periodic atomic structure. While the retention capabilities related to crystallization have been already extensively addressed in the literature, both at the single-cell and at the statistical level, those related to Sr have been mainly studied at the intrinsic level and a statistical analysis at the device level is still lacking. The purpose of this paper is to study the statistical and scaling behavior of the Sr phenomenon in PCM devices, through experimental and modeling tools, allowing for long term, physics-based, reliability extrapolations in large-scaled PCM arrays.

关键词： Phase change memory Phase change materials Strontium Crystallization Amorphous materials Crystalline materials Germanium alloys Tin alloys Tellurium Bonding

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Granular electron injection and random telegraph noise impact on the programming accuracy of NOr Flash memories

Granular electron injection and random telegraph noise impac...

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Annual International Symposium on reliability Physics

作者： Christian Monzio Compagnoni Luca Chiavarone Marcello Calabrese riccardo Gusmeroli Michele Ghidotti Andrea L. Lacaita Alessandro. S. Spinelli Angelo Visconti Dipartimento di Elettronica e Informazione Politecnico di Milano and IUNET Milan Italy Technology Development R&D Numonyx Milan Italy IFN-CNR Milan Italy

This work investigates for the first time charge-granularity effects during channel hot-electron programming of NOr flash memories, comparing the granular electron injection and the random telegraph noise limitations to the accuracy of the programming algorithm. The spread of the threshold voltage shift that is determined by the electron injection statistics is studied as a function of the channel hot-electron programming conditions, explaining the results by an analytical model accounting for the sub-Poissonian nature of the electron transfer to the floating gate. The scaling trend of the injection statistical spread is then investigated on NOr technologies ranging from 180 to 45 nm and its contribution to the width of the threshold voltage distribution in presence of a program verify level is separated from that given by random telegraph noise.

关键词： Telegraphy Flash memory Character generation Semiconductor device noise Threshold voltage Channel hot electron injection Functional programming Nonvolatile memory Testing research and development

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Comparison of double patterning technologies in NANd flash memory with sub-30nm node

Comparison of double patterning technologies in NAND flash m...

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European Conference on Solid-State device research (ESSdErC)

作者： Byungjoon Hwang Jeehoon Han Myeong-Cheol Kim Sunggon Jung Namsu Lim Sowi Jin Yongsik Yim donghwa Kwak Jaekwan Park Jungdal Choi Kinam Kim Flash Core Technology Lab. Semiconductor R&D Center Samsung Electronics Co. Ltd. Yongin-City Kyungki-Do Korea Process Development Team Semiconductor R&D Center Samsung Electronics Co. Ltd. Yongin-City Kyungki-Do Korea

Fine patterning technologies - e-beam lithography, SPT (spacer patterning technology) and SadPT (self aligned double patterning technology)-have been introduced to develop a single unit of nano-scale MOSFET. However, in order to achieve manufacturable high density NANd Flash memories, the merits and demerits of each technology should be considered in three points of view: device characteristics, process controllability and mass production. In this paper, we suggest the appropriate technology for particular cell types, CTF (charge trap flash) cell, floating poly-Si gate cell, and for process steps such as active, gate and bit-line.

关键词： Space technology Lithography Controllability Appropriate technology Etching research and development Electronic mail MOSFET circuits Manufacturing processes Mass production

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An estimation method of rotational direction and speed for free running AC machines without speed and voltage sensor

An estimation method of rotational direction and speed for f...

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International Conference on Electrical Machines and Systems (ICEMS)

作者： Hideaki Iura Zhe Chen Kozo Ide Tsuyoshi Hanamoto Inverter Development Department Drive Division Yaskawa Electric Corporation Japan Corporate R&D Center Yaskawa Electric Corporation Japan Graduate school of Life Science & Systems Engineering Kyushu Institute of Technology Japan

This paper presents an estimation method of rotational direction and speed for free running AC machines driven by an inverter without speed and voltage sensor. The method has four estimation modes, and the method utilized only the measured phase current of machines. The amplitude of current during the estimation is suppressed to lower levels such as the exciting current, which is smaller than the rated value. Good performance of this method is confirmed by the experiment.

关键词： AC machines Voltage Inverters Phase estimation Sensor systems Life estimation Power supplies Permanent magnet machines Frequency estimation research and development

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Vertical cell array using TCAT(Terabit Cell Array Transistor) technology for ultra high density NANd flash memory

Vertical cell array using TCAT(Terabit Cell Array Transistor...

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Symposium on VLSI technology

作者： Jaehoon Jang Han-Soo Kim Wonseok Cho Hoosung Cho Jinho Kim Sun Il Shim Younggoan Jae-Hun Jeong Byoung-Keun Son dong Woo Kim Kihyun Jae-Joo Shim Jin Soo Lim Kyoung-Hoon Kim Su Youn Yi Ju-Young Lim dewill Chung Hui-Chang Moon Sungmin Hwang Jong-Wook Lee Yong-Hoon Son U-In Chung Won-Seong Lee Samsung Electronics Co. Ltd Giheung-Gu Yongin-City Gyeonggi-Do Korea Memory Research and Development Center Memory Division Samsung Electronics Company Limited Yongin si Gyeonggi South Korea Advanced Technology Development Team 2&Process Development Team Memory R&D Center

Vertical NANd flash memory cell array by TCAT (terabit cell array transistor) technology is proposed. damascened metal gate SONOS type cell in the vertical NANd flash string is realized by a unique dasiagate replacementpsila process. Also, conventional bulk erase operation of the cell is successfully demonstrated. All advantages of TCAT flash is achieved without any sacrifice of bit cost scalability.

关键词： SONOS devices Plugs Costs Etching Transistors Scalability Nonhomogeneous media dielectric substrates Sun Moon

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Ion-irradiation-induced selective bond rearrangements in amorphous GeTe thin films

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Physical review B 2009年第24期80卷 245205-245205页

作者： r. de Bastiani E. Carria S. Gibilisco M. G. Grimaldi A. r. Pennisi A. Gotti A. Pirovano r. Bez E. rimini Dipartimento di Fisica ed Astronomia Università di Catania and MATIS CNR-INFM 64 via S. Sofia I-95123 Catania Italy Numonyx R&D Technology Development Via Olivetti 2 Agrate Brianza 20041 Milan Italy Dipartimento di Fisica ed Astronomia Università di Catania and CNR-IMM 64 via S. Sofia I-95123 Catania Italy

The change in the local order of amorphous sputter deposited GeTe thin films irradiated with Ge+ ion and its influence on the subsequent thermal induced crystallization has been investigated by means of micro-raman spectroscopy and in situ time-resolved reflectivity. A reduction in the Ge-rich tetrahedral species and an enhancement of the crystallization kinetics occurred in the irradiated amorphous samples. The rearrangement of the amorphous network is suggested to be related to thermal spikes effects rather than to the defects produced by the ions in the collision cascade.

关键词： amorphous semiconductors bonds (chemical) crystallisation germanium compounds ion beam effects IV-VI semiconductors raman spectra reflectivity semiconductor thin films sputter deposition time resolved spectra

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An assessment of the CO 2 storage potential of the Indian subcontinent

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Energy Procedia 2009年第1期1卷 2607-2613页

作者： S. Holloway A. Garg M. Kapshe A. deshpande A.S. Pracha S.r. Khan M.A. Mahmood T.N. Singh K.L. Kirk J. Gale British Geological Survey Keyworth Nottingham NG12 5GG UK Indian Institute of Management Ahmedabad Maulana Azad National Institute of Technology Bhopal India Sustainable Development and Policy Institute Islamabad Pakistan Private Consultant Center for Eco-Friendly Mining Alternatives Dhanbad Jharkhand India IEA GHG R&D Programme Orchard Business Centre Stoke Orchard Cheltenham Glos GL52 7RZ UK

Current annual CO 2 emissions from large industrial point sources in India, Pakistan, Bangladesh and Sri Lanka are estimated to be 721, 45, 17 and 3 million tonnes (Mt) CO 2 respectively. rapid growth in annual CO 2 emissions is likely: in India, the nine planned ultramega power plants alone could add some 257 Mt CO 2 to annual emissions. The main potential CO 2 storage sites in India are located in the saline aquifers and oil and gas fields around the margins of the peninsula, especially offshore, but also onshore in the states of Gujarat and rajasthan. There is also thought to be considerable saline aquifer CO 2 storage potential in NE India, but this is distant from the main emission sources. CO 2 sources in the centre of the peninsula appear to be poorly placed with respect to potential CO 2 storage sites. There is estimated to be about 5Gt CO 2 storage potential in India’s major coalfields and oil and gas fields. It is important that India’s saline aquifer storage capacity is quantified, as this will determine whether there is significant potential for the application of CCS. Pakistan will have significant CO 2 storage potential (c. 1.6 Gt CO 2 ) in its gas fields when they become depleted. It is also thought to have good potential for saline aquifer CO 2 storage in the Lower Indus and Potwar Basins and there is a good match between the locations of sources and potential storage sites. Bangladesh’s annual CO 2 emissions from large point sources are approximately 17 Mt CO 2 . It is thought to have significant CO 2 storage potential in its gas fields (c. 1.1 Gt CO 2 ) which will become available gradually as the individual fields are depleted. Bangladesh also probably has significant CO 2 storage potential in saline aquifers in most of the eastern half of the country, both onshore and offshore. Sri Lanka’s total annual emissions of CO 2 from large point sources are estimated to be approximately 3 Mt. These will be increased by the operation of new coal-fired powe

关键词： CO 2 storage India Pakistan Bangladesh Sri Lanka

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dissolution of Co,Mn and Zn from zinc plant residue in H2O2-H2SO4-H2O medium

Dissolution of Co,Mn and Zn from zinc plant residue in H2O2-...

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第五届国际湿法冶金学术会议(5th International Conference on Hydrometallurgy)

作者： A.r.Eivazi Hollagh N.Heidari E.Keshavarz Alamdari d.darvishi d.Moradkhani Department of Mining Metallurgical and Petroleum Engineering Amirkabir University of Technology Tehran Iran Materials and Energy Research Center P.O.Box 14155-4777 Tehran Iran R&D Center Iranian Zinc Mines Development Company Zanjan Iran R&D Center Iranian Zinc Mines Development Company Zanjan Iran Department of Metallurgy and Materials Engineering University of TehranP.O.Box 11155-4563 Tehran Iran Materials and Energy Research Center P.O.Box 14155-4777 Tehran Iran Materials and Energy Research Center P.O.Box 14155-4777 Tehran Iran Faculty of Engineering Zanjan University Zanjan Iran

Studies have been carried out to determine maximum recovery of Co, Mn and Zn from zinc plant residue in H2O2-H2SO4-H2O *** per oxide is used as a reductive *** leaching parameters such as sulphuric acid concentration, solid to liquid ratio, time and amount of hydrogen per oxide were varied to study their effect on metal *** optimum conditions established were as follows: 20 gr/lit sulphuric acid, S/L of 1∶10, 3 %(V/V) hydrogen per oxide and ambient *** these conditions, more than 90% of Co, Mn and Zn could be extracted within 20 ***,"Extraction procedure tests" approved by EPA were applied to the residue to determine the amount of released metals and were compared with toxicity limits given by EPA for the solid wastes.

关键词： Hydrometallurgy Zinc plant residue.Cobalt Manganese Zinc reductive leaching

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A multilevel PWM strategy suitable for high-voltage motor direct drive systems with consideration of the adverse effect of dead time

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ELECTrICAL ENGINEErING IN JAPAN 2008年第2期165卷 77-88页

作者： Tadano, Yugo Urushibata, Shota Ogura, Kazuya Shigaki, Akira Nomura, Masakatsu Central Research Laboratory R&D Center Meidensha Corporation Japan Meidensha Technology Development Department Japan Meidensha System Device Factory Design Department Japan

recently, high-voltage motor direct drive systems have been put to practical use, and various multilevel PWM strategies have also been proposed. This paper describes a multilevel PWM strategy [our group calls it the Carrier Phase Selection Method (CPS)] that has the lowest line voltage harmonic distortion in order to prevent the degradation of high-voltage motor winding insulations. This method takes the adverse effect of dead time into consideration, and it controls the shift direction of a carrier phase. Therefore, a favorable output waveform without instantaneous voltage surges is achieved even if the line voltage level changes. Moreover, the swithching transitions across all switching devices are well-balanced, so the utilization of inverter unit cells is equalized. This is an important factor when designing the entire system. Based on simulation and experimental results, it is shown that this CPS method is particularly effective in high-voltage motor direct drive systems. (C) 2008 Wiley Periodicals, Inc.

关键词： multicarrier PWM high-voltage direct drive inverter cascaded multilevel inverter dead time phase shift

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