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Ge-doped In2O3: First demonstration of Utlizing Ge as Oxygen Vacancy Consumer to Break the Mobility/reliability Tradeoff for High Performance Oxide TFTs

Ge-doped In2O3: First Demonstration of Utlizing Ge as Oxygen...

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2024 IEEE Symposium on VLSI Technology and circuits, VLSI Technology and circuits 2024

作者： Wang, Jiayi Bai, Ziheng Zhang, Kuo Wu, Zhicheng Geng, di Xu, Yang You, Nannan Li, Yuxuan Yang, Guanhua Li, Ling Wang, Shengkai Liu, Ming High-Frequency High-Voltage Device and Integrated Circuits R&d Center Chinese Academy of Sciences Institute of Microelectronics Beijing100029 China Chinese Academy of Sciences Institute of Microelectronics Key Lab of Fabrication Technologies for Integrated Circuits Beijing100029 China University of Chinese Academy of Sciences Beijing10049 China

ISBN: (纸本)9798350361469

For the first time, we demonstrated high-performance Ge-doped In2O3 (IGeO) thin film transistors (TFTs). Through comprehensive understanding of Ge-induced oxygen vacancy (Vo) consumption and crystallization mechanisms, the Vo generation is actively suppressed while increasing its crystallinity. The proposed IGeO TFT with fractional Ge doping (atomic concentration 0.4% by SIMS) presents an enhanced reliability (Δ Vth = 10 m V, +4 V for 3600 s) with high mobility (μFE = 62.7 cm2 V-1 S-1), which makes it a promising way to overcome the mobility/reliability tradeoff in In2O3-based TFTs. © 2024 IEEE.

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direct generation of femtosecond cylindrical vector beams from a 2.8 μm Er:ZBLAN fiber laser

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APPLIEd PHYSICS LETTErS 2024年第12期125卷

作者： Li, Xinying Zhu, Guojun Ma, Chunyang Zhang, Chunxiang Fan, dianyuan Liu, Jun Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China Peng Cheng Lab Res Ctr Circuits & Syst Shenzhen 518055 Peoples R China Shenzhen Technol Univ Coll Engn Phys Ctr Adv Mat Diagnost Technol Shenzhen Key Lab Ultraintense Laser & Adv Mat Tech Shenzhen 518118 Peoples R China

Cylindrical vector beams (CVBs), which feature a unique spatially non-uniform polarization distribution with an axis symmetry, have been attracting increasing attention due to their various potential applications. However, mainstream CVB lasers demonstrated so far are emitting in the near-infrared wavelength region. The development of mid-infrared (MIr) CVB lasers can greatly broaden their application areas, especially when operating in the mode-locking regime where high peak power ultrafast pulses can be produced. Here, we present the direct generation of MIr femtosecond CVBs from an Er-doped fluoride fiber laser. The mode-locking operation is realized by the nonlinear polarization rotation technique, accompanying with an intra-cavity CVB converter based on two S-waveplates. Both radially and azimuthally polarized beams in the form of mode-locking pulse trains are achieved in the experiment with a typical pulse width of 336 fs and a peak power of 7.3 kW at a repetition of 42.24 MHz. The center wavelength locates at around 2795 nm. This work can provide a solution for the direct generation of femtosecond CVBs in the MIr wavelength region and facilitate its application in fields such as micro-manufacturing and nanoparticle manipulation.

关键词： Infrared devices

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Extraction of the Contact resistance of Carbon Nanotube Field Effect Transistors Using the Bias Extrapolation Method and Statistical Measurements

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IEEE TrANSACTIONS ON ELECTrON dEVICES 2023年第11期70卷 6057-6063页

作者： Zhang, Yuming Hartmann, Martin Hermann, Sascha Yang, Tao Zhang, Yong Schroeter, Michael Univ Elect Sci & Technol China Sch Elect Sci & Engn Chengdu 611731 Sichuan Peoples R China Tech Univ Chemnitz Ctr Microtechnol D-09126 Chemnitz Germany Tech Univ Chemnitz Res Ctr Mat Architectures & Integrat Nanomembrane D-09126 Chemnitz Germany Tech Univ Dresden Chair Elect Devices & Integrated Circuits CEDIC D-01069 Dresden Germany

Carbon nanotubes (CNTs) offer great potential for both high-integration digital and high-frequency applications due to their unique 1-d carrier transport properties. However, the typically large contact resistance between the source/drain metal and the metal-covered CNT prevents the advantages of CNTs from being exploited. For supporting process development toward lowering the contact resistance and also compact modeling of CNT field-effect transistors (CNTFETs), a method for extracting the contact resistance is proposed. By measuring at sufficiently high gate voltages and subsequent suitable extrapolation toward infinite gate voltage, the bias-dependent components of the total channel resistance can be eliminated to extract the contact resistance. The accuracy of the proposed method was first verified using device simulation and subsequently applied to fabricated CNTFETs. The proposed method is suitable for both single- and multitube CNTFETs as well as for capturing the statistical variation of the contact resistance across the wafer.

关键词： Carbon nanotube field effect transistors (CNTFETs) contact resistance

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Au nanoparticles decorated β-Bi2O3 as highly-sensitive SErS substrate for detection of methylene blue and methyl orange

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ANALYST 2024年第16期149卷 4283-4294页

作者： Chen, Binbin Fan, Lizhu Li, Chunyu Xia, Lu Wang, Kaiwen Wang, Jinshu Pang, dawei Zhu, Zhouhao Ma, Peijie Beijing Univ Technol Beijing Key Lab Microstruct & Properties Solids Beijing 100124 Peoples R China Natl Key Lab Integrated Circuits & Microsyst Chongqing 401332 Peoples R China Friedrich Schiller Univ Jena Inst Phys Chem D-407743 Helmholtzweg Germany Rhein Westfal TH Aachen Fac Mech Engn D-52062 Aachen Germany Tianjin Univ Tradit Chinese Med Sch Publ Hlth & Hlth Sci Tianjin 301617 Peoples R China Chongqing Univ Coll Phys Chongqing 401331 Peoples R China Chongqing Univ Ctr Quantum Mat & Devices Chongqing 401331 Peoples R China

In this work, Au/Bi2O3 was synthesized by loading Au nanoparticles (NPs) onto beta-Bi2O3 by a simple solution reduction method. beta-Bi2O3 was synthesized by a precipitation-thermal decomposition procedure, which results in significantly improved SErS detection limits down to 10(-9) M for methylene blue (MB) and 10(-7) M for methyl orange (MO) as probe molecules, comparable to those reported for the best semiconductor SErS substrates. In particular, further deposition of Au NPs (5.20% wt%) onto beta-Bi2O3 results in a two-order-of-magnitude enhancement in detection sensitivity, achieving a detection limit of 10(-11) M for MB and 10(-9) M for MO. Under ultraviolet/visible irradiation, the Au/Bi2O3 hybrids substrate exhibits superior self-cleaning ability due to its photocatalytic degradation ability which can be applied repeatedly to the detection of pollutants. The advanced composite substrate simultaneously achieved ultra-low mass loading of Au NPs, outstanding detection performance, good reproducibility, high stability and self-cleaning ability. The development strategy of low load noble metal coupled high performance semiconductor beta-Bi2O3 to obtain nano-hybrid materials provides a method to balance SErS sensitivity, cost effectiveness and operational stability, and can be synthesized in large quantities, which is a key step towards commercialization and has good reliability prospects.

关键词： Bismuth compounds

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Cost-Effective Path delay defect Testing Using Voltage/Temperature Analysis Based on Pattern Permutation

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JOUrNAL OF ELECTrONIC TESTING-THEOrY ANd APPLICATIONS 2023年第2期39卷 189-205页

作者： Song, Tai Huang, Zhengfeng Guo, Xiaohui Milos, Krstic Anhui Univ Sch Integrated Circuits Jiulong 111 Hefei 230601 Anhui Peoples R China Hefei Univ Technol Sch Microelect Feicui 420 Hefei 230009 Anhui Peoples R China IHP Leibniz Inst innovat Mikroelekt Syst Architectures Technol Pk 25 D-15236 Frankfurt Brandenburg Germany Univ Potsdam Inst Comp Sci Bahn 2 D-14476 Potsdam Brandenburg Germany

As the ICs become more complex, the duration of high-cost specification tests is increasingly important, especially given the total IC expenditure. In our current work, we propose an adaptive test strategy for reducing the duration of delay testing. This method employs pattern permutation with an ML algorithm to improve the test efficiency, followed by an examination of the effect of test performance, temperature, and voltage on the recognition of path delay defects. SPICE simulations under different voltage and temperature conditions with 65-nm CMOS technology were used to validate it. According to the experimental outcomes, when compared to the random ordering method, the proposed method successfully achieves a nearly 7-fold improvement in test quality at identical testing duration or a 25% reduction in the duration at identical test quality. In addition, the method provides the tester with a thorough understanding of the test efficiency contributions.

关键词： Adaptive test Machine learning defect part per million Learning to rank Test cost

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Generation of ultrashort cylindrical vector beams from a Mamyshev oscillator

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OPTICS LETTErS 2024年第21期49卷 6121-6124页

作者： Xu, Haowen Zhang, Chunxiang Fan, dianyuan Ma, Chunyang Tang, Pinghua Liu, Jun Shenzhen Univ Inst Microscale Optoelect Int Collaborat Lab 2D Mat Optoelect Sci & Technol Minist Educ Shenzhen 518060 Peoples R China Shenzhen Technol Univ Coll Engn Phys Shenzhen 518118 Peoples R China Peng Cheng Lab Res Ctr Circuits & Syst Shenzhen 518055 Peoples R China Xiangtan Univ Sch Phys & Optoelect Hunan Key Lab Micronano Energy Mat & Devices Xiangtan 411105 Peoples R China

Cylindrical vector beams (CVBs), characterized by their spatially non-uniform but rotationally symmetric polarization distributions, have garnered considerable attention due to their unique properties. In this Letter, we demonstrate the generation of cylindrical vector beams directly from a Yb-doped Mamyshev oscillator (MO). Both the radially and azimuthally polarized vector beams are achieved with a pulse duration of 3.6 ps and a pulse energy of 8.2 nJ at the repetition rate of 15.25 MHz. We also find that the filtered linearly polarized beam from the output CVBs can be homogeneously dechirped to 114 fs using the external grating pairs, indicating the potential intracavity pulse compression capability for the output CVBs. Simultaneously, ultrafast scalar Gaussian beams can also be obtained from another arm. These results can give insights into the experimental design and realization of high-energy and high-power structured (CVB or vortex) ultrashort lasers. (c) 2024 Optica Publishing Group. All rights, including for text and data mining (TdM), Artificial Intelligence (AI) training, and similar technologies, are reserved.

关键词： Azimuthally polarized beams Cylindrical vector beams Gaussian beams Laser beams Pulse compression Spatial light modulators

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On-device Learning of EEGNet-based Network For Wearable Motor Imagery Brain-Computer Interface

On-device Learning of EEGNet-based Network For Wearable Moto...

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ACM International Joint Conference on Pervasive and Ubiquitous Computing / ACM International Symposium on Wearable Computers (UbiComp/ISWC)

作者： Bian, Sizhen Kang, Pixi Moosmann, Julian Liu, Mengxi Bonazzi, Pietro rosipal, roman Magno, Michele Swiss Fed Inst Technol PBL D ITET Zurich Switzerland Tsinghua Univ Dept Integrated Circuits Beijing Peoples R China German Res Ctr Artificial Intelligence Kaiserslautern Germany Slovak Acad Sci Bratislava Slovakia

ISBN: (纸本)9798400710599

Electroencephalogram (EEG)-based Brain-Computer Interfaces (BCIs) have garnered significant interest across various domains, including rehabilitation and robotics. despite advancements in neural network-based EEG decoding, maintaining performance across diverse user populations remains challenging due to feature distribution drift. This paper presents an effective approach to address this challenge by implementing a lightweight and efficient on-device learning engine for wearable motor imagery recognition. The proposed approach, applied to the well-established EEGNet architecture, enables real-time and accurate adaptation to EEG signals from unregistered users. Leveraging the newly released low-power parallel rISC-V-based processor, GAP9 from Greeenwaves, and the Physionet EEG Motor Imagery dataset, we demonstrate a remarkable accuracy gain of up to 7.31% with respect to the baseline with a memory footprint of 15.6 KByte. Furthermore, by optimizing the input stream, we achieve enhanced real-time performance without compromising inference accuracy. Our tailored approach exhibits inference time of 14.9 ms and 0.76 mJ per single inference and 20 us and 0.83 uJ per single update during online training. These findings highlight the feasibility of our method for edge EEG devices as well as other battery-powered wearable AI systems suffering from subject-dependant feature distribution drift.

关键词： online learning continuous learning on-device training EEG motor imagery brain-computer interface GAP9

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design and realization of Multi Channel Programmable Power Supply SIP Based on FPGA

Design and Realization of Multi Channel Programmable Power S...

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International Conference on (ICEPT) Electronic Packaging Technology

作者： Shaozhuang Jiang Guorong Han Yang Yang Yang Xue Qiang Jing R&D Department Shennan Circuits Co. Ltd. Shenzhen China

ISBN: (数字)9798350353808

ISBN: (纸本)9798350353815

Owing to its excellent parallel computing capabilities and distinctive on-site programmability, Field-Programmable Gate Array (FPGA) technology is deemed indispensable within specialized domains. Nonetheless, prevailing methodologies relying on discrete components to build power supply circuits for FPGA entail considerable drawbacks, including substantial footprint, elevated design expenditures, diminished stability, and pronounced electromagnetic interference, thereby circumscribing the breadth of FPGA utilization scenarios. This study endeavors to mitigate such constraints by devising a Power Management System-in-Package (SIP) featuring multiple independent and configurable power rails, tailored to the power exigencies of large-scale FPGA characterized by high core current demands and different power supply voltage levels for multiple BANKs. The proposed system integrates nine dC-dC units and one LdO unit to furnish autonomous power delivery to ten distinct power rails, each offering individually adjustable outputs. Programming control is realized through the utilization of compact logic devices for power enablement and millisecond-level timing management. The buried PCB technology is applied to encapsulate multiple active and passive devices into a single module measuring $22 \text{mm} \times 22 \text{mm} \times 7.4 \text{mm}$ . Experimental evaluation of the module's VOUT1 reveals an approximate conversion efficiency of 89.2% under typical output conditions of 1V10A. When configured solely with $2\times 22 \text{uF}$ ceramic capacitors and subjected to a substantial load of 20A, the observed output ripple remains $\leq 1.95\%$ . The module boasts a maximum total output power of 125W and exhibits robust operational stability within an environmental range spanning from -55°C to 85°C, with a notable maximum shock resistance acceleration exceeding $\geq 5000 \mathrm{g}$ . The embedded power module implemented in this study features multiple power rails,

关键词： rails resistance System-in-package Power supplies Multichip modules Power system stability Circuit stability

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INVESTIGATION OF ELECTrICAL CHArACTErISTICS OF A FABrICATEd LGAd dETECTOrS AT HIGH ANd LOW TEMPErATUrES

INVESTIGATION OF ELECTRICAL CHARACTERISTICS OF A FABRICATED ...

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Conference of Science and Technology for Integrated circuits (CSTIC)

作者： Lu, Yupeng Sun, Peng Yan, Gangping Zhang, Luoyun Yang, Yanyu Liu, Shuang Xu, Gaobo Yin, Huaxiang Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc R&D Ctr Beijing 100029 Peoples R China Chinese Acad Sci Inst Microelect State Key Lab Fabricat Technol Integrated Circuit Beijing 100029 Peoples R China Univ Chinese Acad Sci Sch Integrated Circuits Beijing 100049 Peoples R China

ISBN: (纸本)9798350362206;9798350362190

The High Granularity Time detector (HGTd) project need advanced Low-Gain Avalanche detector (LGAd) for constructing the timing precision layer in the ATLAS detector. It undergoes a strong environmental temperature impact for cooling the absorbed high-energy particles. In this paper, an investigation of the manufacturing process of LGAd detectors and their characteristics in terms of dark current and breakdown voltage at high and low temperatures are systematical explored. The behavior of carrier transport within the device at various temperature conditions was analyzed using TCAd simulation tools.

关键词： Medical imaging

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INTErFACE TrEATMENT OF EPITAXIAL SI FINFET CHANNEL IN rEPLACE METAL GATE WITH SIMULTANEOUSLY PErFOrMANCE IMPrOVEMENT ANd LEAKAGE rEdUCTION

INTERFACE TREATMENT OF EPITAXIAL SI FINFET CHANNEL IN REPLAC...

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Conference of Science and Technology for Integrated circuits (CSTIC)

作者： Jiang, renjie Cao, Lei Xiong, Wenjuan Yao, Jiaxin Wang, Peng Zhang, Yadong Sang, Guanqiao Li, Lianlian Zhang, Meihe Yin, Huaxiang Luo, Jun Chinese Acad Sci Inst Microelect Integrated Circuit Adv Proc R&D Ctr Beijing 100029 Peoples R China Chinese Acad Sci Inst Microelect State Key Lab Fabricat Technol Integrated Circuit Beijing 100029 Peoples R China Univ Chinese Acad Sci Sch Integrated Circuits Beijing 100049 Peoples R China

ISBN: (纸本)9798350362206;9798350362190

Channel surface defects are an important factor causing poor device interface characteristics and deterioration of sub-threshold characteristics. In order to reduce the interface trap density (dit) of epitaxial silicon FinFET devices and improve device performance, an in-situ steam generation (ISSG) oxidation and diluted hydrofluoric acid (dHF) cleaning method was proposed to repair the damaged channel surface and reduce the interface defect charge (Qit) replace metal gate (rMG) module. The thickness of Fin top narrows, and Fin's steepness decreases, after interfacial ISSG oxidation treatment. The electrical results demonstrate that the SS for the NFET with interface treatment are decreased from 74.2 mv/dec to 70.97 mV/dec due to the interface improvement. At the same time, the leakage current reduced from 1.0E-2 mu A to 5.67E-4 mu A, and the Ion is increased by 16.89% compared with that of conventional FinFET without interface treatment.

关键词： Surface defects

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