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作者： Šereda, Petr Bartrolí, Anna Vilanova Serlie, Iwo W.O. Gerritsen, Frans A. Eindhoven University of Technology Department of Biomedical Engineering Image Analysis Group WH 3.2a Postbus 513 5600 MB Eindhoven Netherlands Delft University of Technology Department of Applied Physics Pattern Recognition Group Lorenzweg 1 2628 CJ Delft Netherlands PHILIPS Medical Systems Nederland BV Research and Advanced Development P.O. Box. 10000 5680 DA Best Netherlands Biomedical Engineering Department Eindhoven University of Technology Biomedical Image Analysis Section Biomedical Engineering Department Eindhoven University of Technology Quantitative Imaging Group Department of Imaging Science and Technology Delft University of Technology Biomedical Engineering Department Technische Universiteit Eindhoven Research and Advanced Development Business Group Medical IT Philips Medical Systems Best Netherlands

A crucial step in volume rendering is the design of transfer functions that will highlight those aspects of the volume data that are of interest to the user. For many applications, Boundaries carry most of the relevant information. Reliable detection of Boundaries is often hampered by limitations of the imaging process, such as blurring and noise. We present a method to identify the materials that form the boundaries. These materials are then used in a new domain that facilitates interactive and semiautomatic design of appropriate transfer functions. We also show how the obtained boundary information can be used in region-growing-based segmentation. © 2006 IEEE.

关键词： Volumetric analysis

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Impact of Cation Vacancies on Leakage Current on TiN/ZrO2/TiN Capacitors Studied by Positron Annihilation

Impact of Cation Vacancies on Leakage Current on TiN/ZrO2/Ti...

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Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & International Symposium on Semiconductor Manufacturing (ISSM)

作者： Akira Uedono Naomichi Takahashi Ryu Hasunuma Yosuke Harashima Yasuteru Shigeta Zeyuan Ni Hidefumi Matsui Akira Notake Atsushi Kubo Tsuyoshi Moriya Koji Michishio Nagayasu Oshima Shoji Ishibashi Faculty of Pure and Applied Science University of Tsukuba Tsukuba Ibaraki Japan Graduate School of Science and Technology Nara Institute of Science and Technology Ikoma Nara Japan S-Technology Development Center Tokyo Electron Technology Solutions Ltd. Nirasaki Yamanashi Japan SDC AI Development Department Tokyo Electron Ltd. Sapporo Hokkaido Japan Advanced Data Planning Department Tokyo Electron Ltd. Tokyo Japan Research Institute for Measurement and Analytical Instrumentation National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki Japan Research Center for Computational Design of Advanced Functional Materials National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki Japan

ISBN: (纸本)9781665471343

TiN/ZrO 2 /TiN capacitors were characterized using XRD, STEM, EDX, and monoenergetic positron beams. For an as-deposited ZrO 2 layer, an interlayer was formed in the layer. After post-deposition annealing at 550°C, the width of the interlayer expanded. The major vacancy-type defects in the ZrO 2 layer were determined to be a Zr-vacancy coupled with oxygen vacancies by the positron annihilation technique. After annealing, the size of these vacancies increased. The presence of the cation vacancies and their complexes in the ZrO 2 layer suggests that not only oxygen vacancies but also such defects play a role in the defect formation of the ZrO 2 layer and affect its electrical properties.

关键词： Annealing X-ray scattering Capacitors Positrons Semiconductor device manufacture Leakage currents

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Photocatalytic Performance of Water-Soluble Nucleobase-Functionalized Molybdenum Disulfide Nanocomposite Against Methyl Blue Dye

SSRN

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SSRN 2024年

作者： Melaku, Ashenafi Zeleke Cheng, Chih-Chia Department of Chemistry College of Natural and Computational Sciences Woldia University Ethiopia Graduate Institute of Applied Science and Technology National Taiwan University of Science and Technology Taipei10607 Taiwan Advanced Membrane Materials Research Center National Taiwan University of Science and Technology Taipei10607 Taiwan

In this report, environmental friendly and water-soluble nucleobase containing polymer modified MoS2 nanocomposite as-synthesized through aqueous phase sonication was applied as photocatalyst against dye containing wastewater exhibiting a superior degradation efficiency comparing aqueous phase exfoliated MoS2 alone under light irradiation. Specifically, the nanocomposite, referred to as Cy-80% and E-MoS2, demonstrated a photodegradation efficiency of 98.7% and 75.6% respectively within 60 minutes of UV light irradiation time at 365 nm. This enhancement in photocatalytic performance is attributed to the intercalation of self-assembled nucleobase containing polymer within multiple layers of MoS2. This intercalation process leads to the creation of separate wide surface area and abundant active sites nanosheets, which accelerate the separation of photo-induced electron-hole pairs. Furthermore, the nanocomposite catalyst used for multiple cycles with appreciable degradation efficiency, maintaining the nanocomposite content throughout the catalyst recovery process. Overall, the results suggest that the synthesized MoS2 nanocomposite is a promising photocatalytic material for the degradation of dye-containing wastewater, particularly when exposed to a visible irradiation source. © 2024, The Authors. All rights reserved.

关键词： Reusability

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No Imputation without Representation

arXiv

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arXiv 2022年

作者： Lenz, Oliver Urs Peralta, Daniel Cornelis, Chris Leiden Institute of Advanced Computer Science Leiden University Netherlands Research Group for Computational Web Intelligence Department of Applied Mathematics Computer Science and Statistics Ghent University Belgium Department of Information Technology Ghent University Belgium

By filling in missing values in datasets, imputation allows these datasets to be used with algorithms that cannot handle missing values by themselves. However, missing values may in principle contribute useful information that is lost through imputation. The missing-indicator approach can be used in combination with imputation to instead represent this information as a part of the dataset. There are several theoretical considerations why missing-indicators may or may not be beneficial, but there has not been any large-scale practical experiment on real-life datasets to test this question for machine learning predictions. We perform this experiment for three imputation strategies and a range of different classification algorithms, on the basis of twenty real-life datasets. In a follow-up experiment, we determine attribute-specific missingness thresholds for each classifier above which missing-indicators are more likely than not to increase classification performance. And in a second follow-up experiment, we evaluate numerical imputation of one-hot encoded categorical attributes. We reach the following conclusions. Firstly, missing-indicators generally increase classification performance. Secondly, with missing-indicators, nearest neighbour and iterative imputation do not lead to better performance than simple mean/mode imputation. Thirdly, for decision trees, pruning is necessary to prevent overfitting. Fourthly, the thresholds above which missing-indicators are more likely than not to improve performance are lower for categorical attributes than for numerical attributes. Lastly, mean imputation of numerical attributes preserves some of the information from missing values. Consequently, when not using missing-indicators it can be advantageous to apply mean imputation to one-hot encoded categorical attributes instead of mode imputation. © 2022, CC BY-NC-ND.

关键词： Adversarial machine learning

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Phonon Polariton Dispersion in Metal-Doped Nanocomposite Superlattice System

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Journal of Optical Communications 2023年第2期44卷 237-242页

作者： Krishnamurthy, R. Revathy, V. Wilson, K. S. Joseph Taya, Sofyan A. Amiri, I.S. Department of Electronics and Communication Engineering Sri Vasavi Engineering College Andhra Pradesh Tadepalligudem India Department of Physics Sethu Institute of Technology Tamilnadu Kariapatti India Karumathur Tamilnadu Madurai625 514 India Physics Department Islamic University of Gaza Gaza Palestine Computational Optics Research Group Advanced Institute of Materials Science Ton Duc Thang University Ho Chi Minh City Viet Nam Faculty of Applied Sciences Ton Duc Thang University Ho Chi Minh City Viet Nam

Copper nanoparticles (Cu) anchored lithium niobate (LiNbO3) nanostructures were prepared by a simple hydrothermal technique. The fine and sparse Cu nanoparticles were homogeneously dispersed over the surface of LiNbO3. An effectual anchoring of Cu was evidenced from the acquired reflection planes in diffraction analysis, which clearly indicate the face-centered cubic structure of Cu. The UV-Visible spectrum of LiNbO3 and Cu/LiNbO3 nanocomposites were also studied. When the Cu nanoparticles were doped with LiNbO3/LiTaO3 superlattice system, the change in the dispersion relation was observed theoretically. The characteristics of the polariton dispersion variation with filling factor of Cu nanoparticles concentration were investigated systematically. The importance of the polariton modes in communication sector was analyzed and the occurrence of new modes on the polaritonic gap, where the propagation of the electromagnetic wave is forbidden, were obtained in the system due to the presence of copper nanoparticles. © 2019 Walter de Gruyter GmbH, Berlin/Boston.

关键词： Polariton

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Performance Evaluation of Bidirectional Wavelength Division Multiple Access Broadband Optical Passive Elastic Networks Operation Efficiency

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Journal of Optical Communications 2024年第1期45卷 87-93页

作者： Sivaranjani, S. Sampathkumar, A. Rashed, Ahmed Nabih Zaki Sundararajan, T.V.P. Amiri, Iraj S. Computational Optics Research Group Advanced Institute of Materials Science Ton Duc Thang University Vietnam Ho Chi Minh City700000 Viet Nam Faculty of Applied Sciences Ton Duc Thang University Vietnam Ho Chi Minh City700000 Viet Nam Department of EEE Sri Krishna College of Engineering and Technology Coimbatore India School of CSE VIT Bhopal University Bhopal India Electronics and Electrical Communications Engineering Department Faculty of Electronic Engineering Menoufia University Menoufia Menouf32951 Egypt Department of ECE Sri Shakthi Institute of Engineering and Technology Coimbatore641014 India

The study has outlined the performance evaluation of bidirectional wavelength division multiple access broadband optical passive elastic networks operation efficiency. Signal power level, Q coefficient parameter, and minimum data error rates are measured numerically in both downstream and upstream directions based on broadband passive optical networks (BPONs). The transmission data rate available in the downstream direction is 10 Gb/s, while its value in the upstream direction is 2 Gb/s. The suitable operating wavelength is selected in the near-infrared region around 1550 nm for minimum losses. The bits sequence length of the optical transmitter is taken in to account for testing the optical network performance efficiency. The proposed model has presented better performance than the previous model by 25.76% in downstream direction and by 12.28% in upstream direction. As well as the bidirectional wavelength division multiple access broadband passive optical elastic networks performance efficiency is measured. © 2024 Walter de Gruyter GmbH. All rights reserved.

关键词： Passive optical networks

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Vacancy-type defects in MOSFETs with high-k gate dielectrics probed by monoenergetic positron beams

Vacancy-type defects in MOSFETs with high-k gate dielectrics...

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5th International Symposium on High Dielectric Constant Materials and Gate Stacks - 212th ECS Meeting

作者： Uedono, A. Hasunuma, R. Shiraishi, K. Yamabe, K. Inumiya, S. Akasaka, Y. Kamiyama, S. Matsuki, T. Aoyama, T. Nara, Y. Miyazaki, S. Watanabe, H. Umezawa, N. Chikyow, T. Ishibashi, S. Ohdaira, T. Suzuki, R. Yamada, K. Graduate School of Pure and Applied Science University of Tsukuba Tsukuba Ibaraki 305-8573 Japan Semiconductor Leading Edge Technologies Inc Tsukuba Ibaraki 305-8569 Japan Graduate School of Advanced Sciences of Matter Hiroshima University Kagamiyama Higashi-Hiroshima 739-8530 Japan Graduate School of Engineering Osaka University Suita Osaka 565-0871 Japan Advanced Electronic Materials Center National Institute for Materials Science Tsukuba Ibaraki 305-0044 Japan Research Institute for Computational Sciences National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8568 Japan Research Institute of Instrumentation Frontier National Institute of Advanced Industrial Science and Technology Tsukuba Ibaraki 305-8568 Japan Nano Technology Research Laboratory Waseda University Shinjuku Tokyo 16-0041 Japan Process and Manufacturing Engineering Center Toshiba Co. Isogo-Ku Yokohama 235-8522 Japan Leading Edge Process Development Center Tokyo Electron LTD. 650 Mitsuzawa Hosaka-cho Nirasaki City Yamanashi 407-0192 Japan

ISBN: (纸本)9781566775700

Vacancy-type defects in MOSFET structures fabricated with high-k (HfSiON) gate dielectrics were studied by monogenetic positron beams An expansion of open volumes in HfSiON fabricated on Si substrates using atomic layer deposition technique was observed with increasing nitrogen concentration This fact was discussed in terms of a role of nitrogen in Hf-related oxide using results obtained by first-principles calculation and XPS. MOSFETs fabricated by F +-channel implantation technique were also characterized. The major defect species which causes the F& shift of MOSFETs was identified as vacancy-fluorine complexes (such as V3F2) locate in channel regions of Si substrates. The preset work suggests that positron annihilation can be used to detect microscopic defects in MOSFETs, and it is a useful tool for determining process parameters for MOSFET fabrications with high-k gate dielectrics. © The Electrochemical Society.

关键词： Fabrication

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First-principles study of structural and electronic properties of ultrathin silicon nanosheets

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Physical Review B 2010年第4期82卷 045419-045419页

作者： Tetsuya Morishita Salvy P. Russo Ian K. Snook Michelle J. S. Spencer Kengo Nishio Masuhiro Mikami Applied Physics School of Applied Sciences RMIT University GPO Box 2476 Melbourne Victoria 3001 Australia Research Institute for Computational Sciences (RICS) National Institute of Advanced Industrial Science and Technology (AIST) 1-1-1 Umezono Tsukuba Ibaraki 305-8568 Japan

Silicon (Si) is currently the basis of most of our nanodevice technology and ultrathin materials based on Si would have the great advantage of easy integration into existing circuitry. Recently, it has been demonstrated using molecular-dynamics calculations that two-dimensional ultrathin layered Si can be formed by cooling fluid Si confined in a slit pore [T. Morishita et al., Phys. Rev. B 77, 081401(R) (2008)]. Here we investigate, using ab initio density-functional theory, the structural and electronic properties of ultrathin double layer Si with and without hydrogenation or substitutional doping. We show that such materials have very desirable electronic properties, being able to be changed from metallic to semiconducting. They may also act as p-type or n-type semiconductors upon partial hydrogenation or substitutional doping of phosphorus. We suggest that these materials may be of great importance to production of nanoelectronic devices and sensors.

关键词：

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development of new materials and structures for efficient organic solar cells fabricated with ionically and electrically conductive polymers

Development of new materials and structures for efficient or...

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作者： Nishikitani, Yoshinori Kubo, Takaya Masuda, Hideki Central Technical Research Laboratory Research and Development Division Nippon Oil Corporation 8 Chidori-cho Naka-ku Yokohama 231-0815 Japan Research Center for Advanced Science and Technology University of Tokyo 1-4-6 Komaba Meguro-ku Tokyo 153-8904 Japan Department of Applied Chemistry Graduate School of Engineering Nagoya Institute of Technology Gokiso-cho Showa-ku Nagoya 466-8555 Japan

ISBN: (纸本)9781617822032

New materials and structures have been developed for efficient organic solar cells, dye-sensitized solar cells (DCSs) and organic thin-film solar cells (OPVs). In this paper, the authors discuss various strategies for achieving high photon-to-electricity conversion efficiency in these solar cells, focusing on nanostructured materials. In the case of DSCs, unlike TiO2 nanoparticles, TiO2 nanotubes with suitable dimensions are expected to function as efficient light scatterers as well as to give large surface areas for charge separation. A strategy for designing triarylamine-functionalized ruthenium dyes, which show high efficiency, is also proposed. Furthermore, OPVs based on donor/acceptor (D/A) block copolymers are discussed, focusing on the phase separation of donor and acceptor segments and their domain sizes. © 2010 Materials research Society.

关键词： Organic solar cells

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Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 Using First-Principles Calculations

Systematic Search for Stabilizing Dopants in ZrO2 and HfO2 U...

引用

Joint e-Manufacturing and Design Collaboration Symposium (eMDC) & International Symposium on Semiconductor Manufacturing (ISSM)

作者： Yosuke Harashima Hiroaki Koga Zeyuan Ni Takehiro Yonehara Michio Katouda Akira Notake Hidefumi Matsui Tsuyoshi Moriya Mrinal Kanti Si Ryu Hasunuma Akira Uedono Yasuteru Shigeta Graduate School of Science and Technology Nara Institute of Science and Technology Ikoma Nara Japan Department of Computational Science and Technology Research Organization for Information Science and Technology Tokyo Japan S-Technology Development Center Tokyo Electron Technology Solutions Ltd. Nirasaki Yamanashi Japan SDC AI Development Department Tokyo Electron Ltd. Sapporo Hokkaido Japan Advanced Data Planning Department Tokyo Electron Ltd. Tokyo Japan Center for Computational Sciences University of Tsukuba Tsukuba Ibaraki Japan Faculty of Pure and Applied Science University of Tsukuba Tsukuba Ibaraki Japan

ISBN: (纸本)9781665471343

In this study, we performed systematic search for dopants to stabilize the tetragonal structure of HfO 2 and ZrO 2 by using first-principles calculations. Whole impurity configurations within the supercell, more than 12,000 systems, are examined and the most stable configurations are assumed to be realized. We reveal the contributions of the dopants to the structural stability of tetragonal phase, and that Si or Ge significantly stabilize the tetragonal phase.

关键词： Temperature dependence Systematics Impurities Lattices Semiconductor device manufacture Germanium Silicon

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