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检索条件"机构=Rf and Smart Sensor Systems"

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Analysis and Characterization of Castellated Holes as rf Interconnects for Modular Millimeter-Wave Devices 24

Analysis and Characterization of Castellated Holes as RF Int...

引用

24th European Microelectronics and Packaging Conference, EMPC 2023

作者： Perlwitz, Paul Christian, Tschoban Ivan, Ndip Harald, Potter Martin, Schneider-Ramelow Research Center of Microperipheric Technologies Technische Universitat Berlin Berlin Germany Fraunhofer Institute for Reliability and Microi Ntegrati on IZM RF Smart Sensor Systems Berlin Germany

ISBN: (纸本)9780956808691

This paper presents an innovative approach to the use of Castellated Holes or Plated Half Holes (PHH) as transmission elements for high frequency interconnections between printed circuit boards in a frequency range of up to 40 GHz. The basic design was examined using commonly used design parameters for PCB modules with Castellated Holes which were then investigated and subsequently optimized to improve their rf performance, with a particular focus on design considerations according to today's industrial manufacturing capabilities. Therefor the FE M-based full wave simulation technique was used to compare and optimize the design parameters in the aim to improve the capability of PHHs as low-loss, low-disturbant R F interconnection alternative in modular PCB designs. Based on these results test samples were developed, which were subsequently measured and thus verified the findings of the simulation. To provide a general comparability, this study focused on the S-Parameter to quantify the performance in terms of transmission losses and reflection. With an optimized design feasible results were achieved with a maximum transmission loss of less than 2 dB at the maximum of the desired frequency range and about 1dB at 20 G H z over the entire signal path. These insights make PHHs suitable for seamless integration into modular designs in R F and millimeter-wave applications. © 2023 IMAPS-Europe.

关键词： Scattering parameters

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Analysis and Characterization of Castellated Holes as rf Interconnects for Modular Millimeter-Wave Devices

Analysis and Characterization of Castellated Holes as RF Int...

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作者： Perlwitz, Paul Tschoban, Christian Ndip, Ivan Pötter, Harald Schneider-Ramelow, Martin Research Center of Microperipheric Technologies Technische Universität Berlin Berlin Germany RF & Smart Sensor Systems Fraunhofer Institute for Reliability and Microintegration IZM Berlin Germany

This paper presents an innovative approach to the use of C astellated Holes or Plated Half Holes (PH H) as transmission elements for high frequency interconnections between printed circuit boards in a frequency range of up to 40 GHz. T he basic design was examined using commonly used design parameters for PC B modules with C astellated Holes which were then investigated and subsequently optimized to improve their R F perfor mance, with a particular focus on design considerations according to today's industrial manufacturing capabilities. T herefor the F E M -based full wave simulation technique was used to compare and optimize the design parameters in the aim to improve the capability of PHH s as low-loss, low-disturbant R F interconnection alternative in modular PC B designs. B ased on these results test samples were developed, which were subsequently measured and thus verified the findings of the simulation. To provide a general comparability, this study focused on the S-Parameter to quantify the perfor mance in terms of transmission losses and reflection. With an optimized design feasible results were achieved with a maximum transmission loss of less than 2 dB at the maximum of the desir ed frequency range and about 1dB at 20 GHz over the entire signal path. T hese insights make PHH s suitable for seamless integration into modular designs in rf and millimeter-wave applications. © 2023 IMAPS-International Microelectronics and Packaging Society. All rights reserved.

关键词： Scattering parameters

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rf models for Through SiC Vias for Highly Integrated Interposer Technology

RF models for Through SiC Vias for Highly Integrated Interpo...

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2023 smart systems Integration Conference and Exhibition, SSI 2023

作者： Koszegi, Julia-Marie MacKowiak, Piotr Stocker, Robert Ndip, Ivan Schiffer, Michael Schneider-Ramelow, Martin Rf and Smart Sensor Systems Fraunhofer Izm Berlin Germany Wafer Level System Integration Fraunhofer Izm Berlin Germany Technische Universität Berlin Fraunhofer Izm Berlin Germany

ISBN: (纸本)9798350325065

This paper we will analyzes the parameter space given by present manufacturing technology of TSiCVs and compares it to standard TSV values. Beside the different geometries available in TSiCV technology, the resistivity of the material is known to be a key parameter as studies on low, medium and high resistivity silicon have indicated previously. A full wave simulation model is presented and the applicability of analytical models known from TSVs adapted for TSiCVs is discussed. The rf modeling of TSiCVs is the next crucial step to optimize manufacturing of TSiCVs for rf needs and to fully integrate a broad spectrum of functionalities on one SiC platform. © 2023 IEEE.

关键词： Silicon carbide

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Integration of III-V Components of 5G Transceiver in Embedding PCB-Based Technology

Integration of III-V Components of 5G Transceiver in Embeddi...

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Electronics System-Integration Technology Conference, ESTC

作者： Tekfouy Lim Stefan Kosmider Kavin Senthil Murugesan Andreas Ostmann Fraunhofer IZM RF & Smart Sensor Systems Berlin Germany Fraunhofer IZM System Integration & Interconnection Technologies Berlin Germany Technical University Berlin Berlin Germany

ISBN: (数字)9798350390360

ISBN: (纸本)9798350390377

III-V technology provides improved the rf performances in term of output power compared with standard CMOS technology. However, their integration into a system is challenging due to their thin top level contact made out of gold. Because of that, standard bumping cannot be applied. This paper presents the embedding PCB-based technology from Fraunhofer IZM which can embed the III-V active components (in this case from GaN technology) in different 5G/6G mm-wave frequency bands (39 GHz and 170 GHz). This technology enables the integration of antennas within the module, utilizing the Antenna in Package (AiP) topology. This integration reduces the overall size of the system, providing a compact solution.

关键词： Radio frequency Gold 5G mobile communication CMOS technology Transceivers Topology Standards Antennas Power generation

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Analysis and Characterization of Castellated Holes as rf Interconnects for Modular Millimeter-Wave Devices

Analysis and Characterization of Castellated Holes as RF Int...

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European Microelectronics and Packaging Conference, EMPC

作者： Paul Perlwitz Tschoban Christian Ndip Ivan Pøtter Harald Schneider-Ramelow Martin Research Center of Microperipheric Technologies Technische Universit±t Berlin Berlin Germany RF & Smart Sensor Systems Fraunhofer Institute for Reliability and Microi ntegrati on IZM Berlin Germany

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rf models for Through SiC Vias for Highly Integrated Interposer Technology

RF models for Through SiC Vias for Highly Integrated Interpo...

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smart systems Integration (SSI)

作者： Julia-Marie Köszegi Piotr Mackowiak Robert Stöcker Ivan Ndip Michael Schiffer Martin Schneider-Ramelow RF and Smart Sensor Systems Fraunhofer IZM Berlin Germany Wafer Level System Integration Fraunhofer IZM Berlin Germany Fraunhofer IZM Technische Universität Berlin Berlin Germany

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The Impact of Ageing on the Dielectric Properties of Laminates for 79 GHz Automotive Radar

The Impact of Ageing on the Dielectric Properties of Laminat...

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Electronic Components and Technology Conference (ECTC)

作者： Julia-Marie Köszegi Marco Rossi Olaf Wittler Hans Walter Oliver Schwanitz Ivan Ndip Klaus-Dieter Lang Martin Schneider-Ramelow Forschungsschwerpunkt Technologien der Mikroperipherik Technische Universität Berlin Berlin Germany RF & Smart Sensor Systems Fraunhofer Institute for Reliability and Microintegration Berlin Germany

We present a study of the change in dielectric properties for an example laminate under different accelerated ageing conditions and various durations. The dielectric properties are extracted by use of an open resonator. An estimate of the impact of the changed properties is demonstrated for a microstrip line, a grounded coplanar line and a patch antenna at 79 GHz. We report significant changes in permittivity and loss tangent for temperature loading with potentially drastic impact on the performance of rf interconnects and components.

关键词： Temperature measurement Radio frequency Temperature Radar measurements Permittivity measurement Radar Radar antennas

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Ultra Thin Force and Acceleration sensor Embedded in Flexible Thin Film Substrates Using Thin Chip Handling, Bonding and Carrier Release Technologies

Ultra Thin Force and Acceleration Sensor Embedded in Flexibl...

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International Conference on Developments in esystems Engineering (DESE)

作者： Piotr Mackowiak Kolja Erbacher Kai Zoschke Samer Al-Magazachi Manuel Bäuscher Michael Schiffer Klaus-Dieter Lang Ha-Duong Ngo Wafer Level System Integration Fraunhofer IZM Berlin Germany RF & Smart Sensor Systems Fraunhofer IZM Berlin Germany Fraunhofer IZM Berlin Germany Technologien der Mikroperipherik Technische Universität Berlin Berlin Germany

ISBN: (数字)9781728130217

ISBN: (纸本)9781728130224

This paper describes a fabrication technology for embedding sensors into flex circuit with a partial glass carrier and the electrical test of the circuit. Two sensors with a device thickness of 20 μm have been embedded into the flex circuit. The total thickness of the flex including semi-additive structured metal layers did not exceed 50μm. To enable the acceleration sensor a degree of freedom to follow the excitation of the sensor a special release sequence was used to obtain a partial rigidness of the flex. With the definition of the overhang of the flex the acceleration sensor sensitivity and its resonance frequency can be adjusted. An FEM simulation has been performed to calculate the resonance frequency of the acceleration sensor and electrical measurement have been performed to validate the performance of the device.

关键词： Acceleration Flexible printed circuits Glass Fabrication Force sensors Polymers Substrates

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Packaging for high frequency and reliability

Advancing Microelectronics

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Advancing Microelectronics 2018年第2期45卷 4-4页

作者： Folk, Erica Ndip, Ivan Northrop Grumman United States Department of RF and Smart Sensor Systems Fraunhofer IZM Germany

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rf-MEMS for 5G mobile communications: A basic attenuator module demonstrated up to 50 GHz 15

RF-MEMS for 5G mobile communications: A basic attenuator mod...

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15th IEEE sensors Conference, sensorS 2016

作者： Iannacci, Jacopo Tschoban, Christian Reyes, Jacob Maaß, Uwe Huhn, Max Ndip, Ivan Pötter, Harald Center for Materials and Microsystems - CMM Fondazione Bruno Kessler - FBK Trento Italy RF and Smart Sensor Systems Department Fraunhofer IZM Institute for Reliability and Microintegration Berlin Germany

ISBN: (纸本)9781479982875

After fluctuating expectations and disillusionments, rf-MEMS technology is starting to make its way into market applications. To this regard, the upcoming field of 5G seems to be the fitting application area for such a technology to fully express its potential. In this work, we present an rf-MEMS basic 2-state attenuator module, simulated and measured up to 50 GHz. A series resistive load, inserted on the rf line, can be shorted by electrostatically actuating a suspended Gold thin membrane. When the load is inserted, a rather flat attenuation level (S21) is observed over the whole range, it spanning from -9 dB to -6 dB as the frequency increases. On the other hand, when shorted, the module exhibits a loss (S21) better than -1.4 dB up to 50 GHz. The discussed basic module can then be exploited as building block to implement more complex rf signal conditioning functions. © 2016 IEEE.

关键词： 5G mobile communication systems

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