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Optimization of electrode distance and 2D material coverage for PdSe_(2)-based waveguide-integrated photodetectors

science China(Technological sciences) 2025年第3期68卷 319-330页

作者： Tianxun GONG Beilin ZHU Luyu LV Zhengyi LIU Xiaosheng ZHANG School of Integrated Circuit Science and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of ChinaChengdu611731China

Silicon-based waveguide-integrated photodetectors,leveraging their distinct advantages,have become crucial components in integrated photonic *** achieving combined designs of two-dimensional materials and silicon waveguides,understanding the underlying mechanisms and optimizing structural designs remains *** this study,we systematically investigated the impact of electrode distances on the optical loss and photoelectric response of PdSe_(2)-based strip,rib,and slot waveguide-integrated *** electrode distances were determined,leading to significant enhancements in ***,our devices demonstrated high responsivity values of 9.24 A/W(strip),3.34 A/W(rib),and 4.52 A/W(slot)at 1550 *** results represent remarkable enhancements of 481%,237%,and 267%,respectively,compared to the initial unoptimized electrode ***,we found the slot waveguide-integrated photodetector achieves 34%of absorption saturation with PdSe_(2)coverage of approximately 10μm,while the rib waveguide enables 70%absorption(not yet saturated)with PdSe_(2)coverage of 50μ***,we explored the effect of input power on the performance of these photodetectors,finding that lower input optical power yields higher responsivity and external quantum efficiency(EQE),especially for slot waveguide-integrated ***,these detectors exhibit fast optical response rates across the optical communication O to U bands,with strip,rib and slot waveguide-integrated photodetectors demonstrating 3 dB bandwidths of 23.10,14.49,and 14.86 GHz,respectively.

关键词： silicon waveguide photodetector PdSe_(2) electrode distance responsivity

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14-Bit SAR ADC with on-Chip Digital Bubble Sorting Calibration technology

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Chinese Journal of Electronics 2025年第1期34卷 125-136页

作者： Hua Fan Zhuorui Chen Tongrui Xu Franco Maloberti Qi Wei Quanyuan Feng School of Integrated Circuit Science and Engineering(Exemplary School of Microelectronics) University of Electronic Science and Technology of China Shenzhen Institute for Advanced Study University of Electronic Science and Technology of China Chongqing Institute of Microelectronics Industry Technology University of Electronic Science and Technology of China Department of Electrical Computer and Biomedical Engineering University of Pavia Department of Precision Instrument Tsinghua University Institute of Microelectronics Southwest Jiaotong University

This article designs a 14-bit successive approximation register analog-to-digital converter（SAR ADC）.A novel digital bubble sorting calibration method is proposed and applied to eliminate the effect of capacitor mismatch on the linearity of the SAR ADC. To reduce the number of capacitors, a hybrid architecture of a high 8-bit binary-weighted capacitor array and a low 6-bit resistor array is adopted by the digital-to-analog（DAC）. The common-mode voltage VCM-based switching scheme is chosen to reduce the switching energy and area of the DAC. The time-domain comparator is employed to obtain lower power consumption. Sampling is performed through a gate voltage bootstrapped switch to reduce the nonlinear errors introduced when sampling the input signal. Moreover, the SAR logic and the whole calibration is totally implemented on-chip through digital integrated circuit（IC） tools such as design compiler, IC compiler, etc. Finally, a prototype is designed and implemented using 0.18 μm bipolar-complementary metal oxide semiconductor（CMOS）-double-diffused MOS 1.8 V CMOS technology. The measurement results show that the SAR ADC with on-chip bubble sorting calibration method achieves the signal-to-noise-and-distortion ratio of 69.75 dB and the spurious-free dynamic range of 83.77 dB.

关键词： Semiconductor device measurement Capacitors Linearity Switches Calibration System-on-chip Frequency measurement Time-domain analysis Sorting Signal to noise ratio

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Generic Constraint-Free Design of Sparse MIMO System for Enhanced Localization of Targets

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IEEE Communications Letters 2025年第5期29卷 963-967页

作者： Shaikh, Abdul Hayee Liu, Xiaoguang Southern University of Science & Technology School of Microelectronics Shenzhen China

Recently, the multiple input multiple output (MIMO) system uses sparse arrays to generate a long co-array with higher degrees of freedom (DOFs) for direction of arrival (DOA) estimation. However, most of the existing sparse MIMO have design limitations, lack a generic approach, and generate many holes in co-array, especially with coprime sparse arrays. To this end, we propose a ubiquitous MIMO (U-MIMO) system, which employs a new supplementary tri-level (STiL) receiver (Rx) and a transmitter (Tx) of increased inter-element spacing. The STiL scheme can be designed for any number of Rxs and applies to different sensor arrays. The inter-element spacing of the proposed Tx is increased by the total number of virtual lags in the difference co-array of STiL Rx to produce a longer sum co-array of the difference co-array (SCDC) for the U-MIMO system. As a result, the proposed approach not only overcomes the design constraints but achieves higher DOFs with no or minimum number of holes in SCDC, even when coprime arrays are used. The closed-form expressions are provided for precise sensor locations and calculating the DOFs. Simulation results validate the effectiveness of the U-MIMO system using different sensor arrays. © 2025 IEEE.

关键词： Degrees of freedom (mechanics)

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Super Fragmented Coprime Arrays for DOA Estimation

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IEEE Signal Processing Letters 2025年 32卷 1825-1829页

作者： Shaikh, Abdul Hayee Liu, Xiaoguang Southern university of science and technology School of microelectronics Shenzhen China

The coprime arrays (CA) offer attractive merits in enhancing the degrees of freedom (DOF) and reducing the mutual coupling compared to the uniform linear arrays, which improves the direction of arrival (DOA) estimation performance. However, multiple holes in the difference co-array of the CA cause a loss in DOF and estimation accuracy. This letter presents a super fragmented coprime array (SFCA) configuration, which effectively reconfigures the sensor locations of the existing fragmented coprime design and further increases the inter-subarray spacings. This minimizes the occurrence of holes and enhances the DOF, with the capability of mitigating mutual coupling effects almost identical to the fragmented coprime structure. The SFCA enjoys closed-form expressions for precise sensor locations and calculating the DOF. Simulation results confirm the benefits of the proposed SFCA over other coprime designs. © 1994-2012 IEEE.

关键词： Degrees of freedom (mechanics)

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Observation of memristive behavior in PDMS-glass nanofluidic chip

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Nano Research 2025年第2期18卷 725-732页

作者： Weiling Sun Yike Xiao Pingyuan Yan Fei Sun Xuan Zhang Chuanxiang Sheng Qi Wang Yefeng Yu School of Microelectronics Nanjing University of Science and TechnologyNanjing 210094China Key Laboratory of New Membrane Materials Ministry of Industry and Information TechnologySchool of Environmental and Biological EngineeringNanjing University of Science and TechnologyNanjing 210094China Department of Optical Science and Engineering School of Information Science and TechnologyFudan UniversityShanghai 200433China

Nanofluidic memristors,which use ions in electrolyte solutions as carriers,have been developed rapidly and brought new opportunities for the development of neuromorphic *** the transport and accumulation of ions in nanochannels to process information is an endeavor to realize the nanofluidic *** this study,we report a new nanofluidic memristor,which is a polydimethylsiloxane(PDMS)-glass chip with two platinum(Pt)electrodes and well-aligned multi-nanochannels within PDMS for ion enrichment and *** device not only exhibits typical bipolar memristive behavior and ion current rectification(ICR)but also demonstrates excellent endurance,maintaining stable performance after 100 sweep *** systematically investigate the key factors affecting ion transport behavior in this *** results show that the ICR ratio of the current-voltage(I-V)hysteresis curves decreases with increasing scan rate and solution *** potential measurements are introduced to reveal that the PDMS surface carries more negative charges in higher pH solutions,resulting in more pronounced memristive and ICR ***,our memristor can simulate short-term synaptic plasticity,such as paired-pulse facilitation(PPF)and paired-pulse depression(PPD),with a relatively low energy consumption of 12 pJ per spike per ***,the inherent accessibility and robustness of our nanofluidic memristors facilitate the optimization of device structure and *** important observations and investigations lay a foundation for advancing energy-saving and efficient neuromorphic computing.

关键词： polydimethylsiloxane(PDMS)-glass chip nanofluidic memristor nanochannel short-term synaptic plasticity(STP)

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Machine Learning-Based Diagnosis of Defects in 2.5D and 3D Interconnects

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IEEE Transactions on Components, Packaging and Manufacturing technology 2025年第5期15卷 1104-1116页

作者： Li, Junming Liang, Huaguo Lv, Hao Pan, Yuqi Huang, Zhengfeng Chen, Tian Lu, Yingchun Hefei University of Technology School of Microelectronics Hefei230009 China Hefei University of Technology School of Computer Science and Information Engineering Hefei230009 China

Diagnosing interconnect line defects becomes increasingly challenging in advanced Chiplet integration due to the immaturity of fabrication processes, reduced interconnect spacing, and increased density. In this paper, a non-destructive interconnect defect diagnosis method is proposed. Firstly, redistribution layers (RDL) on the 2.5D silicon interposer and 3D through silicon via-redistribution layer (TSV-RDL) interconnect channels are simulated by ANSYS HFSS, with open and short defects injected at various positions to analyze signal integrity;utilizing S parameters and group delay time as feature vectors, machine learning algorithms are employed specifically for the classification and identification of defects. For defect localization, a novel high-precision scheme driven by adaptive regression and clustering is proposed, achieving highly accurate and reliable localization of defects. The results show that the algorithm can accurately identify open and short defects. In defect localization, the Mean Relative Error (MRE) of the proposed method is less than 8%, and the Maximum Relative Error (MaxRE) does not exceed 13%. Compared with the related algorithms, the localization accuracy is significantly improved, providing a novel perspective for the identification and localization of defects within package interconnect lines. © 2025 IEEE. All rights reserved.

关键词： Group delay

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Adaptive patch-based ring artifacts removal for photon-counting CT

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Optics Express 2025年第1期33卷 18-33页

作者： Liu, Xiangyuan Zhao, Shusen Xia, Dimeng Zhang, Weibin An, Fengwei Southern University of Science and Technology Shenzhen518055 China School of Microelectronics Southern University of Science and Technology Shenzhen518055 China Pengcheng Laboratory Shenzhen518000 China

Photon-counting computed tomography (PCCT) is superior in providing better CT image contrast than traditional CT technology. However, noticeable ring artifacts are more likely caused by the imperfect functioning of photon-counting detectors. This study proposes an efficient ring artifacts correction approach based on the unique characteristics of unwanted components in multi-domains. First, a patch-based signed statistic is utilized to identify the aberrant patches in the frequency space data of the sinogram data. Then, the adaptive patch (AP) filter and plausible patch filtering strategies are developed to correct undesirable patches. Third, an adaptive stripe (AS) filter is suggested in the spatial space to enhance the AP-filtered sinogram data. The experimental results indicate that the proposed methods outperform the state-of-the-art methods in artifact removal and structure preservation. © 2025 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement.

关键词： Clinical applications Computed tomography Image metrics Imaging systems Imaging techniques Wavelet transforms

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Nonflammable electrolyte with weak-solvation structure for stable NCM811 cathode under high temperature

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Journal of Energy Chemistry 2025年第5期104卷 111-117页

作者： Dawei Xu Chao Yang Ailing Yang Xiaowei Liu Meilong Wang Jin Han Tiefeng Liu Ya You State Key Laboratory of Advanced Technology for Materials Synthesis and Processing Wuhan University of Technology International School of Materials Science and Engineering School of Materials Science and Microelectronics Wuhan University of Technology College of Chemical and Biological Engineering Zhejiang University Quzhou Institute of Power Battery and Grid Energy Storage

High-nickel cathode LiNi0.8Co0.1Mn0.1O2（NCM811） could enable lithium-ion batteries （LIBs） with high energy ***,excessive decomposition of the electrolyte would happen in the high operating voltage *** addition,the utilization of flammable organic solvents would increase safety risks in the high temperature ***,an electrolyte consisting of flame-retardant solvents with lower highest occupied molecular orbital （HOMO） level and LiDFOB salt is proposed to address above two *** a result,a thin and robust cathode-electrolyte interface containing rich LiF and Li-B-O compounds is formed on the cathode to effectively suppress electrolyte decomposition in the high operating *** NCM811||Li cell paired with this designed electrolyte possesses a capacity retention of 72% after 300 cycles at 55℃.This work provides insights into developing electrolyte for stable high-nickel cathode operated in the high temperature.

关键词： Electrolyte engineering High temperature High-nickel cathode Safety Weak solvation

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Advanced Nested Array Configuration Achieving Large-Scale Hole-Free Co-Array in MIMO System

Advanced Nested Array Configuration Achieving Large-Scale Ho...

引用

2025 IEEE International Workshop on Antenna technology, iWAT 2025

作者： Shaikh, Abdul Hayee Liu, Xiaoguang School of Microelectronics Southern University of Science and Technology Shenzhen China

ISBN: (纸本)9798331527365

Generally, a large number of antennas are used in the multiple-input multiple-output (MIMO) system for various desirable merits. This paper introduces the advanced nested antenna array (ANAA), a sparse array structure, into the MIMO system to increase the spatial resolution and provide more degrees of freedom (DOFs). The ANAA effectively configures two uniform linear arrays (ULAs) and places two antennas between them. As such, the ANAA produces a hole-free difference co-array. Compared with the existing designs, the ANAA benefits from simple closed-form expressions for its construction and optimized distribution of the total number of antennas. Meanwhile, it provides more DOFs with a wider hole-free co-array aperture. The theoretical propositions are proved, and performance results confirm the superiority of the proposed ANAA configuration. © 2025 IEEE.

关键词： Degrees of freedom (mechanics)

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Achieving ultralow leakage current in Schottky-MIS cascode anode lateral field-effect diode based on AlGaN/GaN HEMT

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science China(Information sciences) 2025年第1期68卷 379-385页

作者： Fangzhou WANG Changhong GAO Guojian DING Cheng YU Zhuocheng WANG Xiaohui WANG Qi FENG Ping YU Peng ZUO Wanjun CHEN Yang WANG Haiqiang JIA Hong CHEN Bo ZHANG Zeheng WANG Songshan Lake Materials Laboratory School of Microelectronics Southern University of Science and Technology State Key Laboratory of Electronic Thin Films and Integrated Devices University of Electronic Science and Technology of China Manufacturing Commonwealth Scientific and Industrial Research Organisation

In this paper,we design and fabricate a Schottky-metal-insulator-semiconductor（MIS） cascode anode GaN lateral field-effect diode（CA-LFED） to achieve ultralow reverse leakage current(ILEAK).The device based on AlGaN/GaN highelectron-mobility-transistor（HEMT） includes a normally-off MIS-controlled channel that is cascoded with a high barrier height Schottky *** reverse bias,the high electric-field is effectively prevented by the normally-off MIS-controlled channel *** with the high barrier height Schottky contact,this feature significantly suppresses the *** by the device fabrication,the CA-LFED with high breakdown voltage（BV）>600 V shows an ultralow ILEAKof 3.6×10-9A/mm as well as a low forward voltage drop（VF） of 2.2 *** performance suggests that the CA-LFED can be a promising candidate for ultralow ILEAKand better VF-ILEAKtrade-off GaN power diode applications.

关键词： Schottky-MIS cascode anode lateral field-effect diode (LFED) ultralow reverse leakage current ($I_{\rm{LEAK}}$) forward drop and reverse leakage trade-off AlGaN/GaN HEMTs

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