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2023 International Symposium of Electronics Design Automation, ISEDA 2023

作者： Sun, Shuyuan Chen, Xuelian Yang, Fan Yu, Bei Li, Shang Zeng, Xuan School of Microelectronics Fudan University State Key Lab of ASIC and System China Cogenda Inc China The Chinese University of Hong Kong Department of Computer Science and Engineering Hong Kong

ISBN: (纸本)9798350304510

As feature size continues to shrink and light source wavelengths remain unchanged, the optical diffraction effects seriously degrade chip yield. Optical proximity correction (OPC) has become an essential step for chip manufacturability. However, OPC cannot achieve satisfactory mask correction results in an affordable number of iterations on some layouts, delaying the chip design cycle. In this paper, we propose to use the Graph Neural Network (GNN) to predict the initial mask correction and speed up model-based OPC. We design a graph model to represent the chip layout, with segments represented as graph nodes and the diffraction effects between them represented as graph edges. The GNN is used to obtain the embedding of the segment, and we predict the shift value based on its output. The proposed GNN-based predictor enhances the original OPC to find a good correction solution for full-chip-size masks in fewer iterations. compared with the original OPC method, experimental results on 55nm and 32nm full chip designs show that the proposed GNN-based OPC method reduces the number of iterations up to 75% and the acquired mask of comparable quality. © 2023 IEEE.

关键词： Diffraction

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Ultrafast flash memory with large self-rectifying ratio based on atomically thin MoS_(2)-channel transistor

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Materials Futures 2022年第2期1卷 153-162页

作者： Liwei Liu Yibo Sun Xiaohe Huang Chunsen Liu Zhaowu Tang Senfeng Zeng David Wei Zhang Shaozhi Deng Peng Zhou Frontier Institute of Chip and System Fudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433People’s Republic of China State Key Laboratory of Optoelectronic Materials and Technologies Guangdong Province Key Laboratory of Display Material and TechnologySchool of Electronics and Information TechnologySun Yat-sen UniversityGuangzhou 510275People’s Republic of China

Flash memory with high operation speed and stable retention performance is in great demand to meet the requirements of big *** addition,the realisation of ultrafast flash memory with novel functions offers a means of combining heterogeneous components into a homogeneous device without considering impedance *** report proposes a 20 ns programme flash memory with 10^(8) self-rectifying ratios based on a 0.65 nm-thick MoS_(2)-channel transistor.A high-quality van der Waals heterojunction with a sharp interface is formed between the Cr/Au metal floating layer and h-BN tunnelling *** addition,the large rectification ratio and low ideality factor(n=1.13)facilitate the application of the MoS_(2)-channel flash memory as a bit-line select ***,owing to the ultralow MoS_(2)/h-BN heterojunction capacitance(50 fF),the memory device exhibits superior performance as a high-frequency(up to 1 MHz)sine signal *** results pave the way toward the potential utilisation of multifunctional memory devices in ultrafast two-dimensional NAND-flash applications.

关键词： ultra-fast flash memory metal floating gate atomic sharp interface atomic thin channel self-rectification transistor high-frequency rectifier

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Sensitive MoS_(2)photodetector cell with high air-stability for multifunctional in-sensor computing

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Chip 2022年第3期1卷 61-68页

作者： Dong-Hui Zhao Zheng-Hao Gu Tian-Yu Wang Xiao-Jiao Guo Xi-Xi Jiang Min Zhang Hao Zhu Lin Chen Qing-Qing Sun David Wei Zhang State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China Zhangjiang Fudan International Innova-tion Center Shanghai 201203China College of Data Science Jiaxing Univer-sityJiaxing City 314001China

With the development of artificial intelligence and the Internet of Things,the number of sensory nodes is growing rapidly,leading to the exchange of large quantities of redundant data between sensors and computing *** computing schemes,which integrate sensing and processing,have provided a promising route to addressing the sensing/processing bottleneck by reducing power consumption,time delay and hardware *** this study,an in-sensor computing architecture involving a photoelectronic cell based on a wafer-scale two-dimensional MoS_(2)thin film was *** MoS_(2)photodetector cell used a top-gate device structure with in-dium tin oxide(ITO)as the transparent gate electrode,which exhibited high air-stability and a high photoresponsivity(R)up to 555.8 A W^(-1) at an illumination power density(P_(in))of 16.0μW cm^(-2)(λ=500 nm).Additionally,a MoS_(2)photodetector array with uniform photoresponsive characteristics was ***,logic gates,including inverter,NAND,and NOR,were achieved based on MoS_(2)photodetector *** multifunctional and robust in-sensor computing was ascribed to the uniform wafer-scale MoS_(2)film grown by atomic layer deposition(ALD)and the unique device *** the detection of optical signals and logic operations were achieved through MoS_(2)photodetector cells with area efficiency,the proposed in-sensor computing device paves the way for potential applications in high-performance,integrated sensing and processing systems.

关键词： In-sensor computing Photodetectors MoS_(2) Atomic layer de-position Transparent electrode

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Simulation and Optimization of In-Situ Integration Ultraviolet HEMT-LED Enabled by P-GaN Selective Epitaxy Growth

Simulation and Optimization of In-Situ Integration Ultraviol...

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SID International Symposium Digest of Technical Papers, 2023

作者： Zhang, Jingyang Huang, Wei Liu, Zhaojun Department of Electronic and Electrical Engineering Southern University of Science and Technology Guangdong Shenzhen518055 China A State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics and Systems School of Microelectronics Fudan University Shanghai200433 China

Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P-GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2-dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p-GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods. © 2023, John Wiley and Sons Inc. All rights reserved.

关键词： Gallium nitride

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3D trench Hf0.5Zr0.5O2-based 32 Kbit 1T1C FeRAM Chip with 2/5 ns Write/Read speed, Low power consumption (0.605 pJ/bit) and Prominent High-temperature Reliability (baking @ 175℃)

3D trench Hf0.5Zr0.5O2-based 32 Kbit 1T1C FeRAM Chip with 2/...

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2024 IEEE International Electron Devices Meeting, IEDM 2024

作者： Yu, Jiajie Guo, Shuming Zhang, Jinna Jin, Xingcheng Wu, Chao Zhao, Minghao Li, Hongbo Guo, Chongyong Xu, Kangli Tian, Yuxin Tian, Dong Li, Zhenhai Wang, Tianyu Zhu, Hao Sun, Qingqing Xie, Yufeng Wang, Hao Zhang, David Wei Chen, Lin School of Microelectronics State Key Laboratory of Integrated Chip and System Fudan University Shanghai China National Integrated CircuitInnovation Center Shanghai201203 China China Resources Microelectronics Limited Wuxi214028 China

ISBN: (纸本)9798350365429

This study proposes a novel 3D trench ferroelectric capacitor with W/TiN/Hf0.5Zr0.5O2/W structure in a 32 Kb ferroelectric random access memory array. The device exhibits great uniformity and excellent high-temperature retention characteristics for over 10 years at 175 ℃. A physics-based compact model of 3D capacitors is developed for the FeRAM circuit simulations and tests which show the fastest write and read speeds of 2 ns and 5 ns, excellent endurance characteristic of 1012 cycles with memory window >120 mV, great retention characteristics up to 225 ℃ and low power consumption of 0.605 pJ per bit. By using 3D trench structure, 2Pr ~35 uC/cm2 at 1.8 V low operating voltage has been achieved at a device area as small as 0.07 um2. Furthermore, the chip probing tests show high yield (>96%) with 188 pass dies of total 194 dies at 175 ℃ and 100% pass rate after baking at 175 ℃ for at least 140 hours. Excellent storage characteristics and high-temperature reliability of the memory arrays show great potential in future 3D ultra-high reliable FeRAM technology. © 2024 IEEE.

关键词： Ferroelectric RAM

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Band Alignment at the Al2O3/β-Ga2O3 Interface with CHF3 Treatment

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Chinese Physics Letters 2020年第7期37卷 92-95页

作者： Hao Liu Wen-Jun Liu Yi-Fan Xiao Chao-Chao Liu Xiao-Han Wu and Shi-Jin Ding State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghai 200433China

The energy band alignment at the atomic layer deposited Al2O3/β-Ga2O3 interface with CHF3 treatment was characterized by x-ray photoelectron spectroscopy and secondary ion mass spectrometry(SIMS).With additional CHF3 plasma treatment,the conduction band offset increases from 1.95±0.1 eV to 2.32±0.1 eV;and the valence band offset decreases from 0.21±0.1 eV to-0.16±0.1 *** a result,the energy band alignment changes from type I to type *** energy band alignment transition could be attributed to the downshift of the core-level of Ga 3d,resulting from the Ga–F bond formation in the F-rich interfacial layer,which is confirmed by the SIMS results.

关键词： CHF3 SIMS treatment

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Versatile core-shell magnetic fluorescent mesoporous microspheres for multilevel latent fingerprints magneto-optic information recognition

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InfoMat 2022年第5期4卷 152-163页

作者： Bingjie Yu Shude Liu Wenhe Xie Panpan Pan Peng Zhou Yidong Zou Qin Yue Yonghui Deng Department of Chemistry Department of Gastroenterology and HepatologyZhongshan HospitalState Key Laboratory of Molecular Engineering of PolymersShanghai Key Laboratory of Molecular Catalysis and Innovative MaterialsFudan UniversityShanghaiChina State Key Laboratory of ASIC and System School of MicroelectronicsFudan UniversityShanghaiChina Institute of Fundamental and Frontier Sciences University of Electronic Science and Technology of ChinaChengduChina

Latent fingerprints are extremely vital for personal identification and criminalinvestigation,and potential information recognition techniques have been widelyused in the fields of information and communication *** physicalpowder dusting methods have been frequently employed to develop latent fingerprintsand most of them are carried out by using single component powders ofmicron-sized fluorescent particles,magnetic powders,or metal particles,there isstill an enormous challenge in producing high-resolution image of latent fingerprintsat different backgrounds or ***,a novel and effectivenanoimpregnation method is developed to synthesize bifunctional magnetic fluorescentmesoporous microspheres for latent fingerprints visualization by growthof mesoporous silica(mesoSiO_(2))on magical Fe_(3)O_(4) core and then deposition offluorescent YVO4:Eu^(3+)nanoparticles in the *** obtainedFe_(3)O_(4)@mesoSiO_(2)@YVO4:Eu^(3+)microspheres possess spatially isolated magneticcore and fluorescent shell which were insulated by mesoporous silica *** their small particle size of submicrometer scale,high magnetization and lowmagnetic remanence as well as the combined magnetic and fluorescent properties,the microspheres show superior performance in visual latent fingerprint recognitionwith high contrast,high anti-interference,and sensitivity as well as goodretention on multifarious substrates regardless of surface permeability,roughness,refraction,colorfulness,and background fluorescence interference,and it makesthem ideal candidates for practical application in fingerprint visualization andeven magneto-optic information storage.

关键词： core-shell structure fluorescent materials latent fingerprint magnetic microspheres magneto-optic information recognition

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Design and Simulation of Integrated Ultraviolet HEMT-LED enabled by P-GaN Selective Epitaxy Growth

Design and Simulation of Integrated Ultraviolet HEMT-LED ena...

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The 2023 International Conference on Display Technology, (ICDT 2023)

作者： Zhang, Jingyang Huang, Wei Liu, Zhaojun Department of electronic and electrical engineering Southern University of Science and Technology Guangdong Shenzhen518055 China A State Key Laboratory of ASIC and System Shanghai Institute of Intelligent Electronics & Systems School of Microelectronics Fudan University Shanghai200433 China

Based on previous work, the ultraviolet HEMT-LED we fabricated by selective epitaxy growth, this paper further performed simulation to explore the most appropriate p-GaN selection size. P- GaN grown by Selective Epitaxy Growth (SEG) can not only be employed as a junction termination to reduce the electric field crowding of the gate of HEMT, but also form an active region by contacting with 2-dimentional electron gas (2DEG). The simulation results provide an effective reference for the design of p-GaN grown by SEG, and further pave the way for the realization of the idea of integration through the selection of growth methods. © 2023, John Wiley and Sons Inc. All rights reserved.

关键词： Gallium nitride

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Combining Max Pooling and ReLU Activation Function in Stochastic Computing 14

Combining Max Pooling and ReLU Activation Function in Stocha...

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14th IEEE International Conference on asic, asicON 2021

作者： Li, Lixing Chen, Deyang Xue, Xiaoyong Zeng, Xiaoyang Fudan University State Key Laboratory of ASIC and System School of Microelectronics Shanghai200433 China

ISBN: (纸本)9781665411493

In the convolutional neural networks (CNNs) based on stochastic computing (SC), the design of pooling layer is always a key point. Although some SC-based CNNs have been proposed, the circuit output accuracy of pooling layer is not ideal at present. Besides, the pooling layer takes most of the area and power consumption. In this paper, we propose a new kind of SC ReLU with feedback and a combined scheme of SC ReLU and max pooling. The previous one improves the circuit output accuracy of SC ReLU while the latter one saves nearly 25% of the area and power consumption. © 2021 IEEE.

关键词： Electric power utilization

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A Novel SGT MOSFET Based on Radiation-Hardening Technology and Its Total-Ionizing-Dose Radiation Effects

IEEE Electron Device Letters

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IEEE Electron Device Letters 2024年第7期45卷 1253-1256页

作者： Mo, Weiye Ye, Jun Liu, Haonan Xiao, Xuan Fan, Wenqi Song, Yang Huang, Wei Wang, Tao Zhang, Qingdong Zhang, Debin Zhang, D.W. Shanghai Institute of Intelligent Electronics and Systems State Key Laboratory of ASIC and Systems School of Microelectronics Fudan University Shanghai200433 China Wuxi China Resources Huajing Microelectronics Company Ltd. Jiangsu Wuxi214061 China Wuxi Microelectronics Scientific and Research Center Wuxi214125 China Shanghai Institute of Space Power-Sources Shanghai200245 China

In this letter, a novel radiation-hardened SGT(N-SGT), with a specialized hardening process, is firstly developed and the radiation degradation model is proposed. N-SGT has more stable Vth and BV after 60Co irradiation, with only 0.16 V of |ΔVth| and 32.5 V of BV at a dose of 100 krad (Si), while it is 1.3 V of |ΔVth| and 22.5 V of BV for the Conventional-SGT (C-SGT). For N-SGT, lower QGOX reduces the effect of channel depletion, which makes the Vth change less. The lower QIPOX, QTROX and QIPOX: QTROX (1:3) effectively weaken the charge imbalance and slow down the BV degradation. Additionally, this letter firstly reveals the TID effects on capacitance characteristics, especially the increase of Cgd in C-SGT, indicating that QIPOX and QGOX caused the enhanced DIBL effect and channel depletion. Fortunately, N-SGT solves these problems well and achieved a good trade-off between BV degradation and channel depletion during TID radiation. © 1980-2012 IEEE.

关键词： Capacitance

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